BAV99
Vishay Telefunken
1 (4)
Rev. 4, 14-Feb-01 www.vishay.com
Document Number 85547
Dual Switching Diode
Features
D
Fast switching speed
D
High conductance
D
Surface mount package ideally suited
for automatic insertion
D
Connected in series
94 8550
Order Instruction
Type Type Differentiation Ordering Code Remarks
BAV99 VR = 70 V BAV99–GS08 Tape and Reel
Absolute Maximum Ratings
Tj = 25
_
CParameter Test Conditions Type Symbol Value Unit
Non repetitive peak reverse voltage VRM 100 V
Repetitive peak reverse voltage=
Working peak reverse voltage=
DC Blocking voltage
VRRM=
VRWM=
VR70 V
Peak forward surge current
tp=1s IFSM 1 A
Peak
forward
surge
current
tp=1
m
s IFSM 4.5 A
Average forward current
half wave rectification with
resistive load and f ≥ 50 MHz,
on ceramic substrate
10 mmx8 mmx0.7 mm
IFAV 150 mA
Forward current on ceramic substrate IF250 mA
Power dissipation 10 mmx8 mmx0.7 mm Ptot 300 mW
Junction and storage temperature
range Tj=Tstg –55...+150
°
C
Maximum Thermal Resistance
Tj = 25
_
C
Parameter Test Conditions Symbol Value Unit
Junction ambient on ceramic substrate 10 mmx8 mmx0.7 mm RthJA 430 K/W
BAV99
Vishay Telefunken
2 (4) Rev. 4, 14-Feb-01
www.vishay.com Document Number 85547
Electrical Characteristics
Tj = 25
_
C
Parameter Test Conditions Type Symbol Min Typ Max Unit
IF=1mA VF715 mV
Forward voltage
IF=10mA VF855 mV
Forward
voltage
IF=50mA VF1 V
IF=150mA VF1.25 V
VR=70 V IR2.5
m
A
Reverse current VR=70 V, Tj=150
°
C IR50
m
A
VR=25 V, Tj=150
°
C IR30
m
A
Diode capacitance VR=0, f=1MHz CD1.5 pF
Reverse recovery time IF=10mA to IR=1mA,
VR=6 V, RL=100
W
trr 6 ns
Characteristics (Tj = 25
_
C unless otherwise specified)
I – Forward Current ( mA )
0.01
0.1
1
10
100
1000
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VF – Forward Voltage ( V )14356
F
Tj=25°C
Tj=100°C
Figure 1. Forward Current vs. Forward Voltage
BAV99
Vishay Telefunken
3 (4)
Rev. 4, 14-Feb-01 www.vishay.com
Document Number 85547
Dimensions in mm
14373
top view
Case: SOT23, plastic
Terminals: solderable per MIL–STD–202, method 208
Polarity: see diagram
Marking: KJE, JE
Approx. weight: 0.008 grams
BAV99
Vishay Telefunken
4 (4) Rev. 4, 14-Feb-01
www.vishay.com Document Number 85547
Ozone Depleting Substances Policy Statement
It is the policy of V ishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. V arious national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
