This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SC1318A Silicon NPN epitaxial planar type For low-frequency driver amplification Complementary to 2SA0720A Unit: mm 0.70.1 Absolute Maximum Ratings Ta = 25C Symbol Rating Unit VCBO 80 V Collector-emitter voltage (Base open) VCEO 70 V Emitter-base voltage (Collector open) VEBO 5 V Collector current IC 0.5 A Peak collector current ICP 1 A Collector power dissipation PC 750 mW Junction temperature Tj 150 C Storage temperature Tstg -55 to +150 C 0.45+0.15 -0.1 2.5+0.6 -0.2 0.45+0.15 -0.1 2.5+0.6 -0.2 1 2 3 2.30.2 Parameter Collector-base voltage (Emitter open) 12.90.5 d p lan inc ea se ed lud p lan m m es ht visi tp t f ed ain ain foll :// ol d d te te ow ww lo is is na n i w. win con con nce anc ng f se g U tin tin t e ou m R ue ue yp typ r P ico L d d e e ro n. ab typ ty du pa ou e pe ct d na t l life so ate cy nic st cle .co inf sta .jp orm ge /e a n/ tio . n. * High collector-emitter voltage (Base open) VCEO * Optimum for the driver stage of a low-frequency and 25 W to 30 W output amplifier 0.70.2 Features 4.00.2 5.10.2 M Di ain sc te on na tin nc ue e/ d 5.00.2 1: Emitter 2: Collector 3: Base TO-92-B1 Package Parameter Symbol Collector-base voltage (Emitter open) ue Electrical Characteristics Ta = 25C 3C tin VCBO Conditions Min IC = 10 A, IE = 0 80 Typ Max Unit V VCEO IC = 2 mA, IB = 0 70 V Emitter-base voltage (Collector open) VEBO IE = 10 A, IC = 0 5 V ICBO VCB = 20 V, IE = 0 Di sc on Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) nc e/ Forward current transfer ratio *1 hFE1 *2 VCE = 10 V, IC = 150 mA 85 40 0.1 A 340 VCE = 10 V, IC = 500 mA VCE(sat) IC = 300 mA, IB = 30 mA 0.2 0.6 Base-emitter saturation voltage VBE(sat) IC = 300 mA, IB = 30 mA 0.85 1.50 VCB = 10 V, IE = -50 mA, f = 200 MHz 120 VCB = 10 V, IE = 0, f = 1 MHz 11 M ain te na hFE2 Collector-emitter saturation voltage fT Collector output capacitance (Common base, input open circuited) Cob V V MHz 20 pF Pl Transition frequency Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Pulse measurement *2: Rank classification Rank Q R S hFE1 85 to 170 120 to 240 170 to 340 Publication date: March 2003 SJC00101BED 1 This product complies with the RoHS Directive (EU 2002/95/EC). 2SC1318A PC Ta IC VCE IC I B 1.2 Ta = 25C Collector current IC (A) 1.0 0.8 VCE = 10 V Ta = 25C IB = 10 mA 9 mA 8 mA 7 mA 0.8 6 mA 5 mA 1.0 Collector current IC (A) 1.0 1.2 0.8 M Di ain sc te on na tin nc ue e/ d Collector power dissipation PC (W) 1.2 0.6 0.4 0.2 2 mA 40 80 120 0 160 10 2 4 6 8 0 10 0 2 Base-emitter saturation voltage VBE(sat) (V) 25C -25C 0.01 10 25C 1 000 0.1 1 10 100 8 10 hFE IC 200 150 Ta = 75C 25C -25C 100 50 0 1 000 VCE = 10 V 250 1 Collector current IC (mA) 10 100 1 000 Collector current IC (mA) 120 40 0 -1 -10 Emitter current IE (mA) 2 ICBO Ta 104 IE = 0 f = 1 MHz Ta = 25C -100 VCB = 20 V 40 103 30 20 Pl 80 Cob VCB 50 ICBO (Ta) ICBO (Ta = 25C) nc te na 160 M ain Transition frequency fT (MHz) e/ VCB = 10 V Ta = 25C Collector output capacitance C (pF) (Common base, input open circuited) ob Di sc fT I E 200 on tin ue Collector current IC (mA) Ta = -25C 75C 0.01 100 6 300 IC / IB = 10 1 4 Base current IB (mA) VBE(sat) IC Ta = 75C 10 0 100 1 1 0.4 Collector-emitter voltage VCE (V) IC / IB = 10 0.1 0.6 0.2 1 mA Forward current transfer ratio hFE 0 VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) 3 mA 0.4 0.2 Ambient temperature Ta (C) 0.001 4 mA d p lan inc ea se ed lud p lan m m es ht visi tp t f ed ain ain foll :// ol d d te te ow ww lo is is na n i w. win con con nce anc ng f se g U tin tin t e ou m R ue ue yp typ r P ico L d d e e ro n. ab typ ty du pa ou e pe ct d na t l life so ate cy nic st cle .co inf sta .jp orm ge /e a n/ tio . n. 0 0.6 102 10 10 0 1 10 Collector-base voltage VCB (V) SJC00101BED 100 1 0 40 80 120 160 Ambient temperature Ta (C) tin on ue 10 1 0 Ambient temperature Ta (C) 40 80 120 d p lan inc ea se ed lud p lan m m es ht visi tp t f ed ain ain foll :// ol d d te te ow ww lo is is na n i w. win con con nce anc ng f se g U tin tin t e ou m R ue ue yp typ r P ico L d d e e ro n. ab typ ty du pa ou e pe ct d na t l life so ate cy nic st cle .co inf sta .jp orm ge /e a n/ tio . n. Di sc e/ nc te na 105 Pl M ain ICEO (Ta) ICEO (Ta = 25C) M Di ain sc te on na tin nc ue e/ d This product complies with the RoHS Directive (EU 2002/95/EC). 2SC1318A ICEO Ta VCE = 10 V 104 103 102 SJC00101BED 3 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. pla d in ea ne clu se pla m d de v ht isi ne ai ma s fo tp t f :// ol d d d nte inte llow ww lo is is na n i w. win con con nce anc ng f se g U tin tin t e ou m R ue ue yp typ r P ico L d d e e ro n. ab typ ty du pa ou e pe ct d na t l life so ate cy nic st cle .co inf sta .jp orm ge /e a n/ tio . n. M Di ain sc te on na tin nc ue e/ d (3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: - Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. - Any applications other than the standard applications intended. (4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. 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