Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
MRF586
DESCRIPTION:
The MRF586 is a silicon NPN transistor, designed for VHF and UHF equipment. Applications include amplifier,
pre-driver, driver, and output stages. It is also suitable for oscillator and frequency-multiplier functions.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25
°
C)
Symbol Parameter Value Unit
V
CEO
Collector-Emitter 17 V
V
CBO
Collector-Base Voltage 35 V
V
EBO
Emitter-Base Voltage 3.0 V
P
D
Total Device Dissipation 1.0 W
I
C
Collector Current 200 mA
Thermal Data
P
D
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
1.0
5.71
Watts
mW/°C
ELECTRICAL SPECIFICATIONS
1. Emitter
2. Base
3. Collector
TO-39
Features
• Silicon NPN, TO-39 packaged VHF/UHF Transistor
• F
t
= 3.0 Ghz (typ) @ 300MHz, 14v, 90mA,
•
G
U max
= 12.5dB (typ) @ 300 MHz, 15v, 40mA
•
|S
21
|
2
= 12.5dB (typ) @ 300 MHz, 15v, 40mA
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
MRF586
STATIC
Value
Symbol Test Conditions Min. Typ. Max. Unit
BV
CEO
I
C
= 5.0 mA
17
-
-
V
BV
EBO
I
E
= 0.1 mA
3.0
-
-
V
BV
CBO
I
C
=1.0 mA
30
-
- V
I
CBO
V
CB
= 10 V
-
50
-
µ
µµ
µA
HFE V
CE
= 5.0 V I
C
= 50 mA
40
-
200
-
DYNAMIC
Value
Symbol Test Conditions Min. Typ. Max. Unit
f
T
f = 300 MHz
I
C
= 90 mA
V
CE
= 14 V
-
3.0
-
GHz
C
OB
f = 1.0MHz
V
CB
= 10V
3.0
pf
FUNCTIONAL
Value
Symbol Test Conditions Min. Typ. Max. Unit
G
U max Maximum Unilateral Gain
(1)
IC = 40 mA, VCE = 15V, f =
300 MHz
-
12.5
-
dB
MAG Maximum Available Gain IC = 40 mA, VCE = 15V, f =
300 MHz
-
13.5
-
dB
|S
21
|
2
Insertion Gain IC = 40 mA, VCE = 15V, f =
300 MHz
10
11.5
-
dB
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
MRF586
Table 1. Common Emitter S-Parameters, @ VCE = 15 V, IC = 40 mA
f S11 S21 S12 S22
(MHz)
|S11| ∠ φ
∠ φ∠ φ
∠ φ
|S21| ∠ φ
∠ φ∠ φ
∠ φ |S12|
∠ φ
∠ φ∠ φ
∠ φ |S22| ∠ φ
∠ φ∠ φ
∠ φ
100 .096 107 10.28 103 .053 84 .479 -40
200 .129 114 5.58 89 .104 83 .361 -49
300 .165 108 3.94 79 .160 76 .356 -56
400 .185 115 3.04 71 .192 74 .388 -71
500 .237 115 2.64 67 .246 75 .384 -79
600 .247 112 2.42 60 .288 71 .408 -82
700
.247 113 2.26 54 .326 69 .417 -84
800 .238 118 2.06 48 .334 67 .432 -87
900
.260 119 1.97 47 .369 71 .420 -91
1000 .246 116 2.06 43 .405 67 .444 -92
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
MRF586
