ON Semiconductor Switching Diode BAS16HT1 ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Continuous Reverse Voltage VR 75 Vdc Peak Forward Current IF 200 mAdc IFM(surge) 500 mAdc Symbol Max Unit PD 200 mW 1.57 mW/C RJA 635 C/W TJ, Tstg 150 C Peak Forward Surge Current 1 2 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board,* TA = 25C Derate above 25C Thermal Resistance Junction to Ambient Junction and Storage Temperature CASE 477-02, STYLE 1 SOD323 1 CATHODE 2 ANODE **FR-4 Minimum Pad DEVICE MARKING BAS16HT1 = A6 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max -- -- -- 1.0 50 30 75 -- -- -- -- -- 715 855 1000 1250 Unit OFF CHARACTERISTICS Reverse Voltage Leakage Current (VR = 75 Vdc) (VR = 75 Vdc, TJ = 150C) (VR = 25 Vdc, TJ = 150C) Adc IR Reverse Breakdown Voltage (IBR = 100 Adc) V(BR) Vdc Forward Voltage (IF = 1.0 mAdc) (IF = 10 mAdc) (IF = 50 mAdc) (IF = 150 mAdc) VF mV Diode Capacitance (VR = 0, f = 1.0 MHz) CD -- 2.0 pF Forward Recovery Voltage (IF = 10 mAdc, tr = 20 ns) VFR -- 1.75 Vdc Reverse Recovery Time (IF = IR = 10 mAdc, RL = 50 ) trr -- 6.0 ns Stored Charge (IF = 10 mAdc to VR = 5.0 Vdc, RL = 500 ) QS -- 45 pC Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 November, 2001 - Rev. 2 1 Publication Order Number: BAS16HT1/D BAS16HT1 820 +10 V 2.0 k IF 100 H tp tr 0.1 F IF t trr 10% t 0.1 F 90% D.U.T. 50 OUTPUT PULSE GENERATOR 50 INPUT SAMPLING OSCILLOSCOPE IR VR INPUT SIGNAL iR(REC) = 1.0 mA OUTPUT PULSE (IF = IR = 10 mA; MEASURED at iR(REC) = 1.0 mA) Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp trr Figure 1. Recovery Time Equivalent Test Circuit 10 IR , REVERSE CURRENT (A) TA = 85C 10 TA = -40C 1.0 0.1 TA = 25C 0.2 0.4 0.6 0.8 1.0 VF, FORWARD VOLTAGE (VOLTS) TA = 125C 1.0 TA = 85C 0.1 TA = 55C 0.01 0.001 1.2 TA = 150C TA = 25C 10 0 Figure 2. Forward Voltage 20 30 40 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Leakage Current 0.68 CD, DIODE CAPACITANCE (pF) IF, FORWARD CURRENT (mA) 100 0.64 0.60 0.56 0.52 0 2 4 6 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Capacitance http://onsemi.com 2 8 50 BAS16HT1 PACKAGE DIMENSIONS SOD-323 CASE 477-02 ISSUE B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. LEAD THICKNESS SPECIFIED PER L/F DRAWING WITH SOLDER PLATING. K A D 1 2 B DIM A B C D E H J K E C MILLIMETERS INCHES MIN MAX MIN MAX 1.60 1.80 0.063 0.071 1.15 1.35 0.045 0.053 0.80 1.00 0.031 0.039 0.25 0.40 0.010 0.016 0.15 REF 0.006 REF 0.00 0.10 0.000 0.004 0.089 0.177 0.0035 0.0070 2.30 2.70 0.091 0.106 STYLE 1: PIN 1. CATHODE 2. ANODE 0.63mm 0.025 1.60mm 0.063 2.85mm 0.112 0.83mm 0.033 mm inches SOD-323 Soldering Footprint http://onsemi.com 3 BAS16HT1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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