2N4338-2N4876 Numerical Index ale MAXIMUM RATINGS ELECTRICAL CHARACTERISTICS || REPLACE- | PAGE P Blu y y = fee @ | Vi @l Bl a cd D J CE PE FE c CESAT ic = -_ 5 Tee 2) | nent | numper | USE 3 ce = g| Koom@le) 4, 5 ale == @ 25C | B| C | (volts) | (volts) |S | (min) (max) 5] (volts) 5 3 5/2 2N4338 thru Field Effect Transistors, see Table on Page 1-166 2N4343 2N4346 LPA 5.0W]A 60} 0 2N4347 S|N LPA 100W | c 140} 120] 0 15 60 2.0A 2N4348 S}N LPA 120W ) Cc 140} 120] 0 15 60 5.0A 2N4350 S|[N LPA 7.0W]C 65 40 }0 10 |] 200 | 0.35A 300M } T pu Field Effect Transistors, see Table on Page 1+166 2N4354 S| P LNA 350M } A 125 60! 69) 0 25 O.1M 500M 7 T 2N4355 s|P LNA 350M | A 125 60 60,0 60 0.1M 500M | T 2N4356 | S| P LNA} 350M]A] 125] so} 80}0] 25 0.1M 500M | T 2N4359 S| P LNA 360M {A 200 45 4510 50 | 600 1.0M 0,25 LOM 50 j,E 2N4360 Field Effect Transistor, see Table on Page 1-166 2N4361 thru Thyristors, see Table on Page 1-154 2N4380 Breet) Field Effect Transistors, see Table on Page 1-166 2N4383 S|N RFA 800M | A 200 40 3010 1000 |E 120M | T 2N4384 S|N RFA 500M | A 200 40 3040 1000 | E 120M | T 2N4385 S|[N RFA 800M {A 200 40 30 | 0 1000 |E 120M [T 2N4.386 S|N RFA 500M FA 200) 40 30 | 0 1000 | E 120M | T 2N4387 S|] P 20W | A 200 40 40 | 0 25 | 100 500M 2N4388 S|] P 20W | A 200 60 6040 25 | 100 500M 2N4389 S|P HSS 200M 1A 125! 12 12 10 30 | 180 LOM Q.15 10M 4 4.0 JE 2N4390 S{N MSS 500M [A 175 120) 120 ]/0 20 2.0M 50M | T 2N4391 thru Field Effect Transistors, see Table on Page 1-166 2N4393 2N4395 S|N 2N3715 | 7-125 LPA | 62.5W }C 60 40 |0 50 | 170 2.0A 4M |T 2N4396 S|N 2N3715 | 7-125 LPA | 62.5W | C 80 60/0 40 1170 2,0A 4M |T 2N4398 S|P 7-167 LPA 200W | C 200 40 40 |0 15 60 154A 1.0 15A 40 /E AM |T 2N4399 S| P 7-167 LPA 200W | C 200 60 60/0 15 60 15A 1.0 15A 40 ]E 4M [T 2n4400 S|N 5-34 HSA 310M FA 135 66 40 40 50 | 150 150M 0.4 150M 20 |E 200M |T 2N4401 SIN 5-34 HSA 310M | A 135 60 40 | 0 |100 | 300 150M 0.4 150M 40 /E 250M | T 2N4402 S|P 5-39 HSA 310M | A 135 40 40/0 50 | 150 150M 0.4 150M 30 |E 150M |T 2N4403 S| P 5-39 HSA 310M |A 135 40 40 10 |100 | 300 150M 0.4 150M 60 |E 200M | T 2N4409 S}N 5-45 MSS 310M TA 135 80 50 [0 60 | 400 1.0M 0.2 1.0M 2N4410 S|N 5-45 MSS 310M | A 135 120 80 | 0 60 | 400 1.0M. 0.2 1.0M 2N4411 |S] P 8-302 | MSA| 150M ]A | 200 15} 12 ]0 | 40 0.5M 400M | T 2N4412 S|N RFA 600M | A 200 40 30 |0 1000 JE LOOM | T 2N4412A |S] P RFA 600M }A 200) 60 60 )0 120 |E 20M |T 2N4413 S|P RFA 400M FA 200 40 30 |0 1000 |E 100M /T 2N4413A |S | P RFA 400M }A 200 60 60 ]0 120 JE 20M |T 2N4414 S|]P RFA 600M |A 200 40 30 |0 1000 JE 100M |T 2N4414A |S | P REA 600M 1A 200 60 60 1O 100 JE 20M )T 2N4415 S| P RFA 400M FA 200 40 30/0 1000 | E 100M jT 2N4415A |S | P RFA 400M | A 200 60 60 |O 100 JE 20M | T pune Field Effect Transistors, see Table on Page 1-166 2N4418 S|N 2N4 264 | 5-29 MSA 250M 4A 125 40 40 |s 40 | 120 10M 500M {T 2N4419 SIN 2N4264 | 5-29 MSA 250M [A 125 30 30 {4S 30 LOM 400M 1 T 2N4420 S|N MPS3646] 5-95 MSA 250M |A 125 40 40/5 30 | 120 30M 350M }T 2N4421 SIN MPS 3646] 5-95 MSA 250M [A 125 30 30 1S 25 30M 300M )T 2N4422 |S |N | MPS3646] 5-95 MSA | 250M {A | 125 40] 40 |s { 30 ]120 30M 350M |T 2N4423 SIN MPS3640] 5-93 MSA 250M | A 125 12 1248 40 1150 30M 400M | T 2N4424 SIN MPS 3711) 5-100 MSA 360M |A 150 40 40 |0 180 |E 2N4425 SUN MSA 560M [A 150 40 40 |O {180 2M 2N4427 S|N LPA 3.5W ]C 40 20 |0 10 | 200 O.1A 500M | T 2N44 28 S]N LPA 3.5W [C 55 35 |0 20 | 200 |0.05A 700M |T 2N4429 S JN LPA 5.0W |C 55 35 |0 20 | 200 |0.05A 700M | T 2N4430 S[N LPA 10W 1c 55 40 |0 20 | 200 Q.,1A 600M |T 2N4431 S|N LPA 18w | Cc 55 40 ]0 20 | 200 O.1A 600M | T 2N4432 S|N RFA 600M ;A 50 30 10 40 {130 6.0M 45 }E 2N4432A 1S [N RFA 600M |A 50 30 |0 80 1150 6.0M 90 JE 2N4440 SIN LPA | 11.6W |C 65 40 |0 10 | 200 |0.1254 400M |T 2N4441 thru Thyristors, see Table on Page 1-154 2N4444 2n4576 [Ss |N | 2N3716 ]7-125 | HPA | 150W |c | 200| 100] 80 ]o | 50/150] 1.0A | 0.8] 5.0A | 25 |B | 30K JE 2N4851 they Unijunction Transistors, see Table on Page 1-174 2N4853 2N4854 c 1 aa HSS 300M JA 200 60 40 |o 50 1.0M 200M |T 2N4855 omplementary Pair Hss | 300M JA | 200] 60] 40 jo } 25 1.0M 200M |T 2N4856 thru Field Effect Transistors, see Table on Page 1-166 2N4861 ane Unijunction Transistors, see Table on Page 1+174 2N4872 S |P HSS 700M |C 200 12 12 |0 50 |120 10M 0.13 1L.OM | 9.0 {E 2N4873 SIN HSS 360M 1A 200 40 15 {oO {110 {150 10M 0.2 10M 7.0 1E 2N4874 SIN RFA 720M |A 175 30 20 [0 200 |E 900M [T 2N4875 Ss |N RFA 720M |A 175 40 25 |0 200 JE 800M |T 2N4876 S {N RFA 720M {A 175 40 30 10 200 |E 650M |T 1-148LK WN XQ QQ QQ] ww 0 >>> ' ee ?E " 7; ">ll"=';wIWVq),]]]|)}]0 WS SILICON POWER TRANSISTOR SELECTOR GUIDE (continued) Power Transistors Type Veco he @ Ie Veewa @ Io & |y NPN PNP Volts (Max) Min/Max Amp Volts (Max} Amp | Amp 10 AMP (Tian = 200C) feo Mre 2N3235, 55 20/70 4.0 11 4.0 0.4 Pp = 125W MJ413 400t 20/80 0.5 0.8 0.5 0. 05 fr 2.5 MHz MJ423 400T 30/90 1.0 0.8 1.0 O.1 #Vcex MJ431 400+ 15/35 2.5 0.7 2.5 0.5 2N3713 60 25/90 1.0 1.0 5.0 0.5 Case 11 2N3714 80 25/90 1.0 1.0 5.0 0.5 (TO-3) 2N3715 60 50/150 1,0 0.8 5.0 0.5 2N3716 80 50/150 1.0 0.8 5.0 0.5 Pp =150 W 2N3789- 60 25/90 1:0 1.0 4.0 0.4 fr 4.0 MHz 2N8790 80 25/90 ros 1.0 4.0 0.4 2N3791 60 PS 50/450 10 Lo 5.0 0.5 -QN3'792 80 50/150 10 1.0 5.0 0.5. 2N4907 O40 20/80 4,0 0.75 4.0 0.4 22N4908 60 80/80 4,0 0.75 4.0 O64 2N4909 fo 80" 20/80 4,0 0,75 4.0 0.4 15 AMP (Timex = 200C) Foe Outs 2N3055 60 20/70 4.0 11 4.0 0.4 Case 11 (TQ-3) 16 AMP (Timax) = 200C) Po =150W fr 0.8 MHz 2N3773 140 15/60 8.0 1.4 8.0 0.8 Case 1 (70-3) 30 AMP (Timex = 200C) = 2N3771* 40 15/60 15 2.0 15 1.5 oo wntiz 2N3772* 60 15/60 10 1.4 10 1.0 f+ 2.0 Mie Md450 40 20/~ 10 1.0 10 16 Case 3 im (10-3) Pp = 200W 2N4398 40: 15/60 15 1.0 15 1.5 fr 4.0 MHz 2N4399 60 15/60 15 1.0 15 1.5 PLASTIC See Section 5 for Complete Characteristics 500 MA (Tmax) = 150C) Pp = 20.8 W Case 77 NB f7~ 10 MHz MJE340 300 30/240 0. 05 _ _ 3.0 AMP (Tigmax) = 150C) 2N4918 40 20/100 0.5 0.6 10 0.1 2N4919 60 20/100 0.5 0.6 1:0 O14 Case 77 Po =30W 24920 80 20/100 0.5 0.6 1.0 0.1 f+ 3.0 MHz 2N4921 40 20/100 0.5 0.6 1.0 0.1 2N4922 60 20/100 0.5 0.6 1.0 0.1 2N4923 80 20/100 0.5 0.6 1.0 0.1 4.0 AMP (Timex) = 150C) 2N5190 40 25/100 1.5 0.6 1.5 0.15 o 2N5191 60 25/100 1.5 0.6 15 0.15 Case 77 bE Pos 40W 2N5192 80 25/100 1.5 0.6 1.5 0.15 SS f 4.0 MHz 2N5193 40 25/100 1.5 0.6 15 0.15 2N5104 60 25/100 1.5 0.6 1.5 0,15 2N5195 80 25/100 1.5 0.6 1.5 0.15Power Transistors 2N4398 siticon) Vero = 40-60 V = 30 2n4399 P, = 200 W High-power PNP silicon transistors for use in pow- er amplifier and switching circuits; serves as direct CASE 3 replacements for germanium high-power devices. (TO-3) MAXIMUM RATINGS Rating Symbol 2N4398 | 2N4399 Unit Collector-Emitter Voltage Voro 40 60 Vde Collector-Base Voltage Voz 40 60 Vde Emitter-Base Voltage VEeB 5 Vde Collector Current-Continuous Io 30 Adc Peak 50 Base Current I 15 Adc Total Device Dissipation @ Ty = 25C Pp 5.0 Watts Total Device Dissipation @ To = 25C Py 200 Watts Operating and Storage Junction Ty, Tytg -65 to +200 C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case 9x0 0.875 c/w Thermal Resistance, Case to Ambient Pon 34 oC/w a | te FIGURE 1 POWER-TEMPERATURE DERATING CURVE E 8 200 = rn | = 6 150 ~ = | -~ Te = 4 100 2 ~ a | a J ~~ & 2 50 = 0 0 o 0 20 40 60 80 100 120 140 160 180 200 TEMPERATURE (C) Safe Area Curves are indicated by Figure 13. All limits are applicable and must be observed. 7-167Power Transistors - 2N4398, 2N4399 (continued) ELECTRICAL CHARACTERISTICS. 1. = 25 untess otherwise noted) [ Characteristic Fig. No. Symbel | Min Max Unit OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage* 13 BV, * Vde (Ig = 200 mAde, Ig = 0) 2N4398 CEO(sus) 40 _ 2N4399 60 Collector Cutoff Current Icro mAdc (Veg = 40 Vde, Ip = 0) 2N4398 - 5.0 Vor = 60 Vde, I, = 0) 2N4399 - 5.0 Collector Cutoff Current 7,8 lorx mAde Wop = 30 Vde, Vpgiofty = 1:5 Vde, To = 150C) _ 10 (Weg = 40 Vde, VpRiotf) = 1-5 Vde) 2N4398 _ 5.0 Wog = 60 Vde, Vpg(ots) = 1.5 Vde) 2N4399 _ 5.0 Collector Cutoff Current 7,8 [ logo mAde Voz = 40 Vde, Ip = 9) 2N4398 _ 1.0 Vop = 60 Vde, Ip = 0) 2N4399 | _ 1.0 Emitter Cutoff Current Ippo mAde Vee = 5.0 Vdc, Io = 0) _ 5.0 __ ON CHARACTERISTICS DC Current Gain* 9 bpp" (Ig = 1,0 Adc, Vop = 2.0 Vde) 40 _ (Ig = 15 Ade, Vop = 2.0 Vdc) 15 60 (ig = 30 Ade, Vox = 4,0 Vdc) 5.0 - Collector-Emitter Saturation Voltage * 10, 11, 12 Vorisat). Vde (Ig = 10 Ade, Ig = 1.0 Adc) 0.75 (Ig = 15 Ade, Ip = 1.5 Ade) 1.0 (Ig = 20 Ade, Ip = 2.0 Adc) - 2.0 Bage-Emitter Saturation Voltage * 11, 12 Verisat) Vde {lg = 10 Ade, In = 1.0 Ade) 1.6 lg = 15 Adc, Ip = 1.5 Ade) _ 1,85 {Iq = 20 Adc, Ip = 2.0 Adc) - 2.5 Base-Emitter On Voltage * Li, 12 VEE(on: Vde (Ip = 15 Ade, Vop = 2.0 Vde) , - LL (ig = 30 Ade, Vox = 4.0 Vde) _ 3.0 DYNAMIC CHARACTERISTICS Current Gain Bandwidth Product fp MHz (Ic = 1.0 Ade, Vog = 10 Vde, f = 1.0 MHz) 4.0 - Small Signal Current Gain be - (lg = 1.0 Ade, Vog = 10 Vde, f = 1.0 kHz) 40 - Rise Time 2,5 tr _ 0.4 us Y, = 30 Vdc, = 10 Adc, Storage Time Wee tc 2,3,6 tg - 1.5 LS Igy = Igy = 1.0 Ade) Fall Time 2,3, 6 ty _ 0.6 us * Pulse Test: PW- 300,45, Duty Cycle 22.0% SWITCHING TIME EQUIVALENT TEST CIRCUITS FIGURE 2 TURN-ON TIME FIGURE 3TURN-OFF TIME Vee R TO SCOPE TO SCOPE wo t, 2 2008 og t, = 20ns Q- 0 ( ' t | I [ _ _ \ i <e) Se tov nov 20 ns | t 1 t 20ns \ i I el b= 10 to 100 jus ~ iro 10 to 100 pus DUTY CYCLE ~ 2.0% DUTY CYCLE ~ 2.0% ~ FOR CURVES OF FIGURES 5 & 6, Rg, Ry. & Voc ARE VARIED. INPUT LEVELS ARE APPROXIMATELY AS SHOWN. 7-1682N4398, 2N4399 (continued) TYPICAL TRANSIENT CHARACTERISTICS FIGURE 4 CAPACITANCES Ty = 25C c = had 2 = Qo = & oO 0.5 1a 20, 30 5.0 10 2 50 REVERSE BIAS (VOLTS) FIGURE 5 TURN-ON TIME 10 7.0 4 50 1) = 25C le/lp = 10 3.0 20 = 10 = 07 ~ 05 t, @ Veg = 30 03 0.2 ty @ Vos = 2.0 0.1 0.03 0.05 0.1 0203 05 10 2.0 3.0 5.0 10 20 30 io, COLLECTOR CURRENT (AMP) FIGURE 6 -- TURN-OFF TIME 10 50 1) = 25C t}@Voe = 30V lefts = 10 3.0 Ins = Ina 20 ts ~ telat a = 10 = - t@Vec = 10 0.5 0.3 0.2 0.2 0.03 0.05 20 30 01 #40203 05 410 2030 50 10 Power Transistors TYPICAL OFF REGION CHARACTERISTICS FIGURE 7 TRANSCONDUCTANCE 10 7.0 5.0 3.0 2.0 10 07 0.5 oa Sw COLLECTOR CURRENT (mA) 2 0.07 0.05 REVERSE BIAS FORWARD BIAS 0.03 0.02 Voe = 30V lo = lees 0.01 Ol 0 0.1 0.2 0.3 0.4 05 Veg, BASE-EMITTER VOLTAGE (VOLTS) 0.2 FIGURE 8 EFFECT OF BASE-EMITTER RESISTANCE lo = lees Ree, EXTERNAL BASE-EMITTER RESISTANCE (OHMS) (TYPICAL Ices VALUES OBTAINED FROM FIGURE 7) 25 50 73 100 125 150 175 te, COLLECTOR CURRENT (AMP) T,, JUNCTION TEMPERATURE (C) 7-169Power Transistors - 2N4398, 2N4399 (continued) Voce, COLLECTOR-EMITTER VOLTAGE (VOLTS) tee, NORMALIZED DC CURRENT GAIN VOLTAGE (VOLTS) TYPICAL ON' REGION CHARACTERISTICS FIGURE 9 NORMALIZED DC CURRENT GAIN Ty = 175C 25C Data shown is obtained from pulse tests and adjusted to nullify effect of lego. 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 10 2.0 3.0 5.0 7.0 10 20 30 Ic, COLLECTOR CURRENT (AMP) FIGURE 10 COLLECTOR SATURATION REGION 0.0L 0.02 0.03 005 007 Ql 02 03 05 7 1.0 2.0 3.0 0 70 10 Ip. BASE CURRENT (AMP) FIGURE 11 ON VOLTAGES FIGURE 12 TEMPERATURE COEFFICIENTS lo/lp < Ovc for Voe{sat) Vae(sa1) @ tc/la = 10 Vee @ Vee = 2.0 V TEMPERATURE COEFFICIENTS (mV/C) Ove for Vane @le/ly = 10 0.03005 01 0203 05 %10 2030 50 10 20 30 0.03005 Of 0203 05 10 2030 50 10 20 30 Ic, COLLECTOR CURRENT (AMF) Ic, COLLECTOR CURRENT (AMP) 7-170Power Transistors 2N4398, 2N4399 (continued) RATINGS AND THERMAL DATA FIGURE 13 ACTIVE-REGION SAFE OPERATING AREA 2N4399 ONLY 100 ps The safe operating area curves indicate to-Vee limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall be- ~~ SFCONDARY BREAKDOWN LIMITED ow the limits indicated by the applicable ~~ THERMALLY LIMITED Tc = 25C The data of Figure 13 is based upon Ty = 200C Tuy = 200C; T. is variable depending CURVES APPLY BELOW RATED Vceo upon conditions. Pulse curves are valid for duty cycles to 10% provided Tua, < 200C. Tis) May be calculated from the data in Figure 14. At high case tempera- tures, thermal limitations will reduce the 2N4398 power that can be handied to values less 2N4399 than the limitations imposed by the sec- ondary breakdown. fe, COLLECTOR CURRENT (AMP) 3.0 4.0 50 60 8.0 10 15 20 30 40 50 60 Voce, COLLECTOR-EMITTER VOLTAGE (VOLTS) FIGURE 14 THERMAL RESPONSE 10 07 8 - STEADY STATE VALUES Osco! = 0.7C/W (TYP) 0.875C/W (MAX) i Bac (th = rit) Buc l=) 0.07 0.05 0.03 D = 0 (SINGLE PULSE) 0.02 0.01 rit], NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 0.01 0.02 0.05 04 02 05 10 2.0 5.0 10 20 50 100 200 500 1000 t, TIME OR PULSE WIDTH (ms) DESIGN NOTE: USE OF TRANSIENT THERMAL RESISTANCE DATA FIGURE A A train of periodical power pulses can be represented by the model as shown in Figure A. Using the model and the device thermal reponse, the normalized effective transient thermal resistance of Figure 14 was calculated for various duty cycles. Pp Pp To find @c(t), multiply the value obtained from Figure 14 by the steady state value ic(*). ! Example: j bo | The 2N4398 is dissipating 100 watts under the following conditions: 1 t= 1.0 ms, te=5.0ms. (D = 0.2) | Using Figure 14, at a pulse width of 1.0 ms and D = 0.2, the reading eveee t of r (t) is 0.28. DUTY CYCLE D-- t) f= . . > te The peak rise in junction temperature is therefore PEAK PULSE POWER Pp OT =r(t) X Pe X Guc(07) = 0.28 x 100 X 0.875 = 24.5C 7-171