DZT5551Q
Document number: DS38496 Rev. 1 - 2
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DZT5551Q
160V NPN VOLTAGE TRANSISTOR IN SOT223
Description
This Bipolar Junction Transistor (BJT) is designed to meet the
stringent requirements of Automotive Applications.
Features
BVCEO > 160V
BVEBO > 6V
IC = 600mA Continuous Collector Current
Low Saturation Voltage (150mV max @10mA)
hFE specified up to 50mA for a high gain hold up
Complementary PNP Type: DZT5401
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Mechanical Data
Case: SOT223
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin.
Solderable per MIL-STD-202, Method 208
Weight: 0.112 grams (Approximate)
Applications
High Voltage Amplification Applications
High Voltage Switching
Ordering Information (Note 5)
Part Number
Marking
Reel size (inches)
Tape width (mm)
DZT5551Q-13
K4N
13
12
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/quality/product_grade_definitions/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Top View
Pin-Out Top View
Device Schematic
SOT223
K4N = Product Type Marking Code
= Manufacturer’s Code Marking
YWW = Date Code Marking
Y = Last Digit of Year ex: 5 = 2015
WW = Week Code 01 ~ 53
SOT223
DZT5551Q
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Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
VCBO
180
V
Collector-Emitter Voltage
VCEO
160
V
Emitter-Base Voltage
VEBO
6
V
Continuous Collector Current
IC
600
mA
Peak Collector Current
ICM
1
A
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Power Dissipation (Note 6)
PD
2
W
Thermal Resistance, Junction to Ambient (Note 6)
RJA
62.5
°C/W
Thermal Resistance, Junction to Leads (Note 7)
RJL
34.05
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
ESD Ratings (Note 8)
Characteristic
Symbol
Value
Unit
JEDEC Class
Electrostatic Discharge - Human Body Model
ESD HBM
4,000
V
3A
Electrostatic Discharge - Machine Model
ESD MM
400
V
C
Notes: 6. Device mounted on 50mm X 50mm X 1.6mm FR-4 PCB with high coverage of single sided 1 oz. copper, in still air condition.
7. Thermal resistance from junction to solder-point (at the end of the collector lead).
8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
DZT5551Q
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DZT5551Q
Thermal Characteristics and Derating Information
110 100
1m
10m
100m
1
50mmx50mmx1.6mm
1oz Copper
Single Pulse
Tamb=25°C
VCE(sat)
Limited
100µs
1ms
10ms
100ms
1s
DC
Safe Operating Area
IC Collector Current (A)
VCE Collector-Emitter Voltage (V) 020 40 60 80 100 120 140 160
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
50mmx50mmx1.6mm
1oz Copper
Derating Curve
Temperature (°C)
Max Power Dissipation (W)
100µ 1m 10m 100m 110 100 1k
0
10
20
30
40
50
60
70 Tamb=25°C
50mmx50mmx1.6mm
1oz Copper
Transient Thermal Impedance
D=0.5
D=0.2
D=0.1
Single Pulse
D=0.05
Thermal Resistance (°C/W)
Pulse Width (s) 100µ 1m 10m 100m 110 100 1k
1
10
100 Single Pulse
Tamb=25°C
50mmx50mmx1.6mm
1oz Copper
Pulse Power Dissipation
Pulse Width (s)
Maximum Power (W)
DZT5551Q
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Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
BVCBO
180
270
—
V
IC = 100µA, IE = 0
Collector-Emitter Breakdown Voltage (Note 9)
BVCEO
160
200
—
V
IC = 1mA, IB = 0
Emitter-Base Breakdown Voltage
BVEBO
6.0
7.85
—
V
IE = 100µA, IC = 0
Collector Cutoff Current
ICBO
—
—
<1
—
50
50
nA
µA
VCB = 120V, IE = 0
VCB = 120V, IE = 0, TA = +100°C
Emitter Cutoff Current
IEBO
—
<1
50
nA
VEB = 4V, IC = 0
ON CHARACTERISTICS (Note 9)
Collector-Emitter Saturation Voltage
VCE(sat)
—
—
65
115
150
200
mV
mV
IC = 10mA, IB = 1mA
IC = 50mA, IB = 5mA
Base-Emitter Saturation Voltage
VBE(sat)
—
—
760
840
1,000
1,200
mV
mV
IC = 10mA, IB = 1mA
IC = 50mA, IB = 5mA
DC Current Gain
hFE
80
80
30
130
145
65
—
250
—
—
IC = 1mA, VCE = 5V
IC = 10mA, VCE = 5V
IC = 50mA, VCE = 5V
SMALL SIGNAL CHARACTERISTICS
Transition Frequency
fT
100
130
300
MHz
VCE = 10V, IC = 10mA,
f = 100MHz
Small Signal Current Gain
hfe
50
—
260
—
VCE = 10V, IC = 10mA,
f = 1kHz
Output Capacitance
Cobo
—
—
6
pF
VCB = 10V, f = 1MHz
Noise Figure
NF
—
—
8
dB
VCE = 5.0V, IC = 200µA,
RS = 1.0kΩ, f = 1.0kHz
Delay Time
td
—
95
—
ns
VCC = 10V, IC = 10mA,
IB1 = -IB2 = 1mA
Rise Time
tr
—
64
—
ns
Storage Time
ts
—
1,256
—
ns
Delay Time
tf
—
140
—
ns
Note: 9. Measured under pulsed conditions. Pulse width ≤ 300μs. Duty cycle ≤ 2%.
DZT5551Q
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Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
1m 10m 100m
100m
1
10m 100m
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
100µ 1m 10m 100m
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1m 10m 100m
0.2
0.4
0.6
0.8
1.0
1.2
1m 10m 100m
0.4
0.6
0.8
1.0
0
50
100
150
200
VCE(SAT) v IC
Tamb=25°C
IC/IB=50
IC/IB=20
IC/IB=10
VCE(SAT) (V)
IC Collector Current (A)
150°C
VBE(SAT) v IC
IC/IB=10
100°C
25°C
-55°C
VCE(SAT) (V)
IC Collector Current (A)
150°C
hFE v IC
Ta=25°C
VCE=5V
-55°C
25°C
100°C
Normalised Gain
IC Collector Current (A)
150°C
25°C
VCE(SAT) v IC
IC/IB=10
100°C
-55°C
VBE(SAT) (V)
IC Collector Current (A)
150°C
VBE(ON) v IC
VCE=5V
100°C
25°C -55°C
VBE(ON) (V)
IC Collector Current (A)
Typical Gain (hFE)
DZT5551Q
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Package Outline Dimensions
Please see AP02001 at http://www.diodes.com/_files/datasheets/ap02001.pdf for the latest version.
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/_files/datasheets/ap02001.pdf for the latest version.
SOT223
Dim
Min
Max
Typ
A
1.55
1.65
1.60
A1
0.010
0.15
0.05
b1
2.90
3.10
3.00
b2
0.60
0.80
0.70
C
0.20
0.30
0.25
D
6.45
6.55
6.50
E
3.45
3.55
3.50
E1
6.90
7.10
7.00
e
—
—
4.60
e1
—
—
2.30
L
0.85
1.05
0.95
Q
0.84
0.94
0.89
All Dimensions in mm
Dimensions
Value (in mm)
C
2.30
C1
6.40
X
1.20
X1
3.30
Y
1.60
Y1
1.60
Y2
8.00
A1
A
7°
7°
D
b
e
e1
b1
C
E1
L
0°-10°
Q
E
0.25
Seating
Plane
Gauge
Plane
X1
Y1
Y
XC
C1 Y2
DZT5551Q
Document number: DS38496 Rev. 1 - 2
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