•850nm
WAVELENGTH
RANGE
•HIGH
WAVELENGTH
UNIFORMITY
•VARIOUS
CONFIG-
URATIONS
AVAILABLE ON
REQUEST
850nm
Multi-Mode
Small Aperture
VCSEL Arrays
AP850
Features
100 µm
125 µm
200 µm
175 µm
250 µm 250 µm
500 µm
125 µm
1 mm
250 µm
500 µm
125 µm
•Ordering information
Part Number Description
APA1201020000 850nm multi-
mode array 1x2
APA1201040000 850nm multi-
mode array 1x4
APA1201080000 850nm multi-
mode array 1x8
APA1201120000 850nm multi-
mode array 1x12
Avalon Photonics Ltd, Badenerstrasse 569
8048 Zurich, Switzerland
Tel: +41 1 498 1411 Fax: +41 1 498 1412
Email: vcsel@avap.ch
Internet: www.avalon-photonics.com
Electro-optical characteristics (for individual lasers)
Parameter Symbol Conditions Ratings Units
Min Typ Max
Threshold current Ith 0.4 1.0 2.0 mA
Threshold voltage Vth 1.6 V
Operating current Iop
typ.Pout = 0.5 mW
123 mA
Operating voltage Vop 1.8 V
Emission wavelength* λ840 850 860 nm
Wavelength uniformity* ∆λ 2nm
Optical output power (MM) Pmax Imax = 8mA 1 3 5 mW
Slope efficiency η0.4 mW/mA
Beam divergence θFWHM 16 °
Bandwidth f3dB >3 GHz
MM = multi-mode; FWHM = full width half-maximum *Tighter wavelength specifications available on request (T=25°C)
The above specifications are subject to change
without notice
Parameter Symbol Ratings Units
Min Typ Max
Temperature tuning coefficient δλ/δT 0.06 nm/K
Threshold current variation 0 to+70°C
∆Ith 0.6 mA
Current tuning coefficient δλ/δI 0.3 nm/mA
Thermal characteristics
Parameter Symbol Rating Units
Optical output power Pmax 5mW
Peak forward current Imax 8mA
Electrical power dissipation Ptot 20 mW/laser
Reverse voltage VR11 V
Operating temperature Top 0 to +70 °C
Storage temperature Tstg -40 to +100 °C
Absolute maximum ratings
850nm Multi-
Mode VCSEL
Arrays
AP850
INVISIBLE LASER RADIATION
- AVOID DIRECT EXPOSURE
PEAK POWER : 3 mW
WAVELENGTH : 850 nm
CLASS IIIb LASER PRODUCT
(T=25°C)
