Ordering number : EN3025A 2SA1705 Bipolar Transistor http://onsemi.com -50V, -1A, Low VCE(sat), PNP Single NMP Applicaitons * Voltage regulators, relay drivers, lamp drivers Features * * Adoption of FBET process Fast switching speed Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Collector-to-Base Voltage Conditions Ratings VCBO VCEO Collector-to-Emitter Voltage Emitter-to-Base Voltage Unit --60 V --50 V VEBO IC ICP Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature PC Tj Storage Temperature Tstg --5 V --1 A --2 A 0.9 W 150 C --55 to +150 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7540-001 * Package : NMP(Taping) * JEITA, JEDEC : SC-71 * Minimum Packing Quantity : 2,500 pcs./box 2.5 6.9 1.05 2SA1705S-AN 2SA1705T-AN 1.0 4.5 1.0 1.45 Marking(NMP(Taping)) Electrical Connection 2 A1705 RANK LOT No. 3 0.6 1.0 0.5 1 15.0 0.9 1 2.54 2 3 0.45 2.54 1 : Emitter 2 : Collector 3 : Base NMP(Taping) Semiconductor Components Industries, LLC, 2013 September, 2013 82212 TKIM TC-00002800/93003TN (KT)/83098HA(KT)/5249MO, TS No.3025-1/6 2SA1705 Electrical Characteristics at Ta=25C Parameter Symbol Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Output Capacitance Collector-to-Base Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time min typ Unit max ICBO IEBO VCB=--50V, IE=0A VEB=--4V, IC=0A hFE1 VCE=--2V, IC=--100mA hFE2 VCE=--2V, IC=--1A fT VCE(sat) VCE=--10V, IC=--50mA 150 IC=--500mA, IB=--50mA --180 --500 VBE(sat) Cob IC=--500mA, IB=--50mA --0.9 --1.2 140* --100 nA --100 nA 400* 30 MHz mV V VCB=--10V, f=1MHz IC=--10A, IE=0A --60 V IC=--1mA, RBE= --50 V V(BR)EBO ton IE=--10A, IC=0A --5 tstg tf See specified Test Circuit. V(BR)CBO V(BR)CEO Collector-to-Emitter Breakdown Voltage Ratings Conditions 12 pF V 40 ns 300 ns 30 ns * : The 2SA1705 is classified by 100mA hFE as follows : Rank S T hFE 140 to 280 200 to 400 Switching Time Test Circuit 2SA1705 IB1 IB2 OUTPUT INPUT PW=20s D.C.1% VR RB RL + + 50 100F 470F VBE=5V VCC= --25V IC=10IB1= --10IB2= --500mA Ordering Information Package Shipping 2SA1705S-AN Device NMP(Taping) 2,500pcs./box 2SA1705T-AN NMP(Taping) 2,500pcs./box IC -- VCE --1.0 0mA mA --1 IC -- VBE VCE= --2V --8mA --1000 --6mA --4mA --0.6 --0.4 --2mA --1mA --0.2 --800 --600 Ta=75 C 25C --25C --0.8 0 0 Pb Free --1200 Collector Current, IC -- mA Collector Current, IC -- A 2 --1 memo --400 --200 IB=0 --1 --2 --3 --4 Collector-to-Emitter Voltage, VCE -- V 0 --5 ITR04270 0 --0.2 --0.4 --0.6 --0.8 --1.0 Base-to-Emitter Voltage, VBE -- V --1.2 ITR04272 No.3025-2/6 2SA1705 hFE -- IC 1000 Ta=75C DC Current Gain, hFE 3 25C 2 VCE= --10V Gain-Bandwidth Product, f T -- MHz 7 5 --25C 100 7 5 3 2 10 7 5 7 --10 2 3 5 7 --100 2 3 5 7 --1000 Collector Current, IC -- mA 2 100 7 5 3 2 5 3 7 2 --10 3 2 10 7 5 3 5 7 --100 2 3 2 5 ITR04276 VCE(sat) -- IC --1000 f=1MHz 3 Collector Current, IC -- mA Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV Output Capacitance, Cob -- pF 2 ITR04274 Cob -- VCB 5 IC / IB=10 7 5 3 2 --100 7 5 5C 7 Ta= 3 C 25 C --25 2 --10 5 7 --1.0 2 3 5 7 --10 2 3 5 Collector-to-Base Voltage, VCB -- V 7 --100 ITR04278 5 3 IC / IB=10 7 2 Collector Current, IC -- A Ta= --25C 7 25C 75C 5 5 7 --100 2 3 5 7 --1000 2 ITR04280 ASO ICP= --2.0A 1 0m 0ms s 10 s --1.0 3 IC= --1.0A --1.0 2 2 1m 5 3 7 --10 Collector Current, IC -- mA VBE(sat) -- IC --10 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 3 10 5 7 5 DC 3 op era 2 tio n --0.1 7 5 3 3 2 2 --0.01 5 7 --10 2 3 5 7 --100 2 3 5 Collector Current, IC -- mA 7--1000 2 ITR04282 PC -- Ta 1.0 Collector Dissipation, PC -- W f T -- IC 5 VCE= --2V 5 Ta=25C Single pulse 7 --1.0 2 3 5 7 --10 2 3 Collector-to-Emitter Voltage, VCE -- V 5 7 ITR04284 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- C 140 160 ITR04285 No.3025-3/6 2SA1705 Bag Packing Specification 2SA1705S-AN, 2SA1705T-AN No.3025-4/6 2SA1705 Outline Drawing 2SA1705S-AN, 2SA1705T-AN Mass (g) Unit 0.275 mm * For reference No.3025-5/6 2SA1705 ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. 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