A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 1/1
S
p
ecifi cations are sub
j
ect to chan
g
e without notice.
CHARACTERISTICS TA = 25 OCNONE
SYMBOL TEST CONDITIONS MINI MUM TYPICAL MAXIMUM UNITS
BVCER IC = 5.0 mA RBE = 10Ω55 V
BVEBO IE = 100 µA3.0 V
ICES VCE = 50 V
VCE = 15 V TC = +150 OC1.0
10.0 µ
µµ
µA
mA
ICEO VCE = 15 V 20 µ
µµ
µA
ftVCE = 15 V IC = 50 mA f = 200 MHz 1200 MHz
COB VCB = 30 V f = 1.0 MHz 3.0 pF
GPE
η
ηη
ηCVCC = 28 V POUT = 1.0 W f = 200 MHz 5.0
35 dB
%
NPN SILICON HIGH FREQUENCY TRANSISTOR
2N5108
DESCRIPTION:
The 2N5108 is a Desig ned for
General Purpose Class C Am plifier
Applications Up to 1 GHz.
FEATURES:
• GPE = 6.0 dB Typ. at 1.0 G Hz
• FT = 1,500 MHz T yp. at 15 V/ 50 mA
• Hermetic TO-39 Package
MAXI MUM RATINGS
IC400 mA
VCB 55 V
VCE 30 V
PDISS 3.5 W @ T C = 25 OC
TJ-65 to +200 OC
TSTG -65 to +200 OC
θ
θθ
θJC 50 OC/W
PACKAGE STYLE TO-39
1 = Emitter 2 = Base
3 = Collector
