Type 2N3960
Geometry 0003
Polarity NPN
Qual Level: JAN - JANTXV
Data Sheet No. 2N3960
Generic Part Number:
2N3960
REF: MIL-PRF-19500/399
Features:
• General-purpose low-power NPN
silicon transistor.
• Housed in TO-18 case.
• Also available in chip form using
the 0003 chip geometry.
• The Min and Max limits shown are
per MIL-PRF-19500/399 which
Semicoa meets in all cases.
Rating Symbol Rating Unit
Collector-Emitter Voltage VCEO 12 V
Collector-Base Voltage VCBO 20 V
Emitter-Base Voltage VEBO 4.5 V
Power Dissipation, TA = 25oC400 mW
Derate above 25oC2.3 mW/oC
Operating Junction Temperature TJ-65 to +200 oC
Storage Temperature TSTG -65 to +200 oC
Maximum Ratings
TC = 25oC unless otherwise specified
PT
TO-18
Data Sheet No. 2N3960
OFF Characteristics
Symbol
Min
Max
Unit
Collector-Base Breakdown Voltage
IC = 10 µA
Collector-Emitter Breakdown Voltage
IC = 10 mA
Emitter-Base Breakdown Voltage
IC = 10 µA
Collector-Emitter Cutoff Current
VCE = 10 V, VBE = 0.4 V ICEX1 --- 1.0 µA
VCE = 10 V, VEB = 2.0 V ICEX2 --- 5.0 nA
VCE = 10 V, VEB = 2.0 V, TA = 150
o
CICEX3 --- 5.0 µA
V
V(BR)EBO 4.5 ---
V(BR)CEO 12 --- V
Electrical Characteristics
TC = 25oC unless otherwise specified
V(BR)CBO 20 --- V
ON Characteristics
Symbol
Min
Max
Unit
Forward Current Transfer Ratio
IC = 1.0 mA, VCE = 1 V hFE1 40 --- ---
IC = 10 mA, VCE = 1 V, pulsed hFE2 60 300 ---
IC = 30 mA, VCE = 1 V, pulsed hFE3 30 --- ---
IC = 10 mA, VCE = 1.0 V, TC = -55
o
ChFE4 30 ---
Base-Emitter Saturation Voltage
VCE 1.0 V, IC = 1.0 mA VBE1 --- 0.8 V dc
VCE 1.0 V, IC = 30 mA VBE2 --- 1.0 V dc
Collector-Emitter Saturation Voltage
IC = 1.0 mA, IB = 0.1 mA VCE(sat)1 --- 0.2 V dc
IC = 30 mA, IB = 3.0 mA VCE(sat)2 --- 0.3 V dc
Small Signal Characteristics
Symbol
Min
Max
Unit
Magnitude of Common Emitter, Small Signal, Short Circuit
Forward Current Transfer Ratio
VCE = 4 V, IC = 5.0 mA, f = 100 MHz |hFE1|13 --- ---
VCE = 4 V, IC = 10 mA, f = 100 MHz |hFE2|14 --- ---
VCE = 4 V, IC = 30 mA, f = 100 MHz |hFE3|12 --- ---
Open Circuit Output Capacitance
VCB = 4 V, IE = 0, 100 kHz < f < 1 MHz
Input Capacitance, Output Open Circuited
VEB = 0.5 V, IC = 0, 100 kHz < f < 1 MHz
COBO --- 2.5 pF
CIBO --- 2.5 pF
