SGS-THOMSON MICROELECTRONICS BUZ71 BUZ71Fl - N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS T TYPE Voss | Roscon) Ib BUz71 BU271Fl 50 V 50 V 18 A 12A 0.1.Q 0.1.9 AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100C LOW GATE CHARGE HIGH CURRENT CAPABILITY 175C OPERATING TEMPERATURE FOR STANDARD PACKAGE a ISOLATED PACKAGE UL RECOGNIZED, ISOLATION TO 2000V DC APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING TO-220 ISOWATT220 : SOLENOID AND RELAY DRIVERS a REGULATORS DC-DC & DC-AC CONVERTERS INTERNAL SCHEMATIC DIAGRAM MOTOR CONTROL, AUDIO AMPLIFIERS D (2) AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.) 6 (4) S$ (3) ABSOLUTE MAXIMUM RATINGS Symbol Parameter si(izdlS;*~* Value Unit BUZ71 BUZ71FI Vos Drain-source Voltage (VGs = 0) 50 v Voer /|Drain- gate Voltage (Res = 20 kQ) 50 v Ves Gate-source Voltage +20 v Ip Drain Current (continuous) at Te = 25 C (#) 18 12 A lpm Drain Current (pulsed) 72 72 A Prot |Total Dissipation at Tc = 25 C 85 30 Ww Tstg Storage Temperature -65 to 175 -65 to 150 C Tj Max. Operating Junction Temperature 175 150 C DIN Humidity Category (DIN 40040) E IEC Climatic Category (DIN IEC 68-1) 55/150/56 (#) Te = 50 C for tor TO-220 April 1992 1/5 89BUZ71/Fl THERMAL DATA TO-220 ISOWATT220 Rihj-case |Thermal Resistance Junction-case Max 1.76 4.17 oCiw Rin-amb [Thermal Resistance Junction-ambient Max 62.5 C/W AVALANCHE CHARACTERISTICS Symbol a ; Parameter Value Unit lar Avalanche Current, Repetitive or Not-Repetitive 18 A (pulse width limited by Tj max, 6 < 1%) Eas Single Pulse Avalanche Energy 60 nJ (starting Tj = 25 C, Ip = lan, Vop = 25 V) Ear Repetitive Avalanche Energy 15 md (pulse width limited by T; max, 5 < 1%) lan Avalanche Current, Repetitive or Not-Repetitive cn A (Tc = 100 C, pulse width limited by Tj max, 6 < 1%) ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified) OFF Symbol Parameter Test Conditions Min. Typ. | Max. | Unit Vipryoss Drain-source Ip = 250 pA Ves =0 50 Vv __|Breakdown Voltage loss Zero Gate Voltage Vos = Max Rating 250 HA Drain Current (Vas = 0) |Vos = Max Rating Tj = 125 C 1000 yA lass Gate-body Leakage Ves=+20V + 100 nA Current (Vos = 0) ON (*) | Symbol Parameter Test Conditions Min. | Typ. | Max. | Unit Vesith) |Gate Threshold Voltage|Vps = Vas ln =1mA 21 4 Vv Ros(on) |Static Drain-source On |Vas=10V ID=9A 0.1 Q Resistance DYNAMIC Symbol Parameter Test Conditions Min. | Typ. | Max. | Unit Qts (*) | Forward Vos=25V ID= 9A 5 Ss ; Transconductance _. Ciss input Capacitance Vos=25V f=1MHz Ves=0 850 pF Coss Output Capacitance 400 pF Crss Reverse Transfer : 150 pF Capacitance | SWITCHING | Symbol | Parameter - Test Conditions Min. Typ. | Max. Unit taiony | Turn-on Time Vop = 30 V ID=3A 30 40 ns tr Rise Time Res = 502 Vos=10V 40 55 ns tarott) Turn-off Delay Time 70 90 ns tt Fall Time 40 55 ns 2/5 i57, SGS-THOMSON IF cicromzctaowics 90ELECTRICAL CHARACTERISTICS (continued) SOURCE DRAIN DIODE BUZ71/FI | Symbol Parameter Test Conditions Min. Typ. | Max. | Unit Isp Source-drain Current 18 A Isom Source-drain Current 72 A (pulsed) bo a Vso (*) |Forward On Voltage isp = 386A Ves=0 2 Vv ter Reverse Recovery Isp = 18A_ di/dt = 100 A/us 100 ns Time Vop = 15 V Tj) = 150 C Qrr _Reverse Recovery 0.2 pC | [Charge _ _ (#) Pulsed: Puise duration = 300 us, duty cycle 1.5 % Safe Operating Area For TO-220 Package GC34490 1A) 4 > Ty, =50 10% 3 < ss = 2 ass 104 6 2 0 D.C. OPERATION 10's 4 2 468 1 2 7) 10 ic? ye) Thermal Impedance For TO-220 Package 2 = K Ringe 6= t/t See PUL SINGLE PULSE oS 4074 1073) t07? 107! +, fs) re] Safe Operating Area For ISOWATT220 Package | GC34500 (A) 4 a * x as D.C. OPERATION ee 52 468 107 vy. (Vv) Thermal Impedance For ISOWATT220 Package 0.05 9.02 0.01 Zm = k Raye SINGLE PULSE B= to/r JUL TE 1074 107% 1077 107! 10 +, s) 3/5 $GS-THOMSON __---___. __.. MICROELECTRONICS oHBUZ71/Fl Derating Curve For TO-220 Package Pro (W) 80 70 60 50 40 . 50 20 10 50 00 50 Trasel C) Output Characteristics Ge34a6D 1A) Voy 6V 16 0 1 2 3 4 () Transconductance Gc21710 \ 915 (S} 12 10 0 10 20 30 46 #50 Io (A) iy 4/5 92 SGS-THOMSON MICROELECTRONICS Derating Curve For ISQWATT220 Package Prat (W) 30 20 100 Tenge (C) Transfer Characteristics GC21760 Ip (A) 20 0 2 4 6 8 Vis (Y) Static Drain-Source On Resistance Roston (9) 0.25 0.20 0.15 Vos =10V 0 10 20 30 40 50 15(A}Maximum Drain Current vs Temperature GC21750 In (A) 20 0 28 50 75 700 125 TT. (C) Capacitance Variation C{pF) 1200 1000 800 600 400 200 0 5 10 15 20 25 30 yw Normalized On Resistance vs Temperature 6C20170 Ros(or) (norm) 1.5 BUZ71/Fl Gate Charge vs Gate-Source Voltage Vos () Normalized Gate Threshold Voltage vs Temperature Vesth) (aorta) 1.2 0.8 0.6 -50 Q 50 100 T, (C3 Source-Drain Diode Forward Characteristics GC20180 Isp fA)