SILICON PLANAR NPN AMPLIFIERS AND SWITCHES The 2N718A and 2N956 are silicon planar epitaxial NPN transistors in Jedec TO-18 metal case, intended for high-speed switching and amplifier applications. ABSOLUTE MAXIMUM RATINGS Veso Collector-base voltage (I~ = 0) 75 Vv Veer Collector-emitter voltage (Ree < 102} 50 Vv VeBo Emitter-base voitage (1. = 0) 7 Vv le Collector current 1 A Prot Total power dissipation at Tamp < 25C 0.5 W at Tease 25C 18 W Tstgs Tj Storage and junction temperature -65 to 200 C MECHANICAL DATA Dimensions in mm to TO-18) 7/76 200THERMAL DATA Rin j-case Thermal resistance junction-case max 97 C/W Rit j-amb Thermal resistance junction-ambient max 350 C/W ELECTRICAL CHARACTERISTICS (Tanp= 25C unless otherwise specified) Parameter Test conditions Min. Typ. Max.| Unit lceBo Collector cutoff Vep= 60V 10) nA current (Ie = 0) Vecgp= 60V Tamp= 150C 10] wA leso Emitter cutoff Vep= 5V current (I~ = 0) for 2N 718A 10) nA for 2N 956 5| nA Viprycso Collector-base Ilo = 100 KA 75 Vv breakdown voltage (le = 0) VceR (sus) Collector-emitter Ilo = 100 mA 50 Vv sustaining voltage (Ree 102) VieryeBo Emitter-base le = 100 HA 7 Vv breakdown voltage (Ic =0) Veeysaty Collector-emitter lc = 150 mA Ig =15mMA 0.24 1.5) V saturation voltage Vee (sat) Base-ernitter le =150mA Ig =15 MA 1 1.3) V saturation voltage hee DC current gain for 2N 718A [c=O0.1mMA Vee= 10V 20 - tce=10mA Vce= 10V 35 _ Ic=150mMA Vee= 10V 40 120} le=500mMA Vee= 10V 20 _ [c= 10mA Vce= 10V Tamp= 755C 20 - for 2N 956 le=O1MA Vee=10V 35 a 201ELECTRICAL CHARACTERISTICS (continued) Parameter Test conditions Min. Typ. Max.! Unit hee DC current gain for 2N 956 Ic=10mA Voee= 10V 75 _ fo= 150mMA Vee= 10V 100 300) lc=500mMA Vee = 10V 40 - le= 10mA Vee= 10V Tamp= -B5C 35 - Nite Small signal current for 2N 718A gain lc=1imA Vee= 5V 30 100| lc=5mA Vce= 10V 35 150| for 2N 956 Ic=1mA Voee= 5V 50 200) \c= SmA Vee= 10V 10 300) fr Transition frequency lc=50mA Vee= 10V f = 20 MHz for2N 718A |60 300 MHz | for 2N 956 70 =6300 MHz Cego Emitter-base lc= 0 Vep= 0.5V L capacitance f=1MHz 20 80 | pF Coro Collector-base le= 0 Vee= 10V capacitance f= 1 MHz 4 25] pF NF Noise figure \c=300NUA Vee= 10V f= 1 kHz for 2N 718A 12} dB for 2N 956 8| dB hip Input impedance f=1 kHz lc=1mA Vep= 5V 24 34) 2 Ic=5mA Vep= 10V 4 8] 2 Ih Reverse voltage ratio f =1 kHz for 2N 718A Ic=1mA Vep= 5V 3x104) ~ lc=5mA Vep= 10V 3x10-4, for 2N 956 le=1mA Vep= 5V 5x104) le=5mA Vep= 10V Bx 104) Hob Output admittance f=1 kHz \c=1mA Vop= BV 0.1 0.5), us lc=5mA Veg= 10V 0.1 1] us * Pulsed: pulse duration = 300 us, duty cycle = 1% 202