Si2301DS
Vishay Siliconix
Document Number: 70627
S-31990—Rev. E, 13-Oct-03
www.vishay.com
1
P-Channel 1.25-W, 2.5-V MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (W) ID (A)
20
0.130 @ VGS = -4.5 V -2.3
-20 0.190 @ VGS = -2.5 V -1.9
G
TO-236
(SOT-23)
S
D
Top View
2
3
1
Si2301DS (A1)*
*Marking Code
Ordering Information: Si2301DS-T1
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage VDS -20
V
Gate-Source Voltage VGS "8
V
Continuous Drain Current (TJ = 150
_
C)b
TA= 25_C
ID
-2.3
Continuous Drain Current (TJ = 150_C)
b
TA= 70_CID- 1.5
A
Pulsed Drain CurrentaIDM -10 A
Continuous Source Current (Diode Conduction)bIS-1.6
Power Dissipationb
TA= 25_C
PD
1.25
W
Power Dissipation
b
TA= 70_CPD0.8 W
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 _C
THERMAL RESISTANCE RATINGS
Parameter Symbol Limit Unit
Maximum Junction-to-Ambientb
R
100
_C/W
Maximum Junction-to-AmbientcRthJA 166
_C/W
Notes
a. Pulse width limited by maximum junction temperature.
b. Surface Mounted on FR4 Board, t v 5 sec.
c. Surface Mounted on FR4 Board.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Si2301DS
Vishay Siliconix
www.vishay.com
2
Document Number: 70627
S-31990—Rev. E, 13-Oct-03
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Limits
Parameter Symbol Test Conditions Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = -250 mA-20
V
Gate-Threshold Voltage VGS(th) VDS = VGS, ID = - 250 mA -0.45 V
Gate-Body Leakage IGSS VDS = 0 V, VGS = "8 V "100 nA
Zero Gate Voltage Drain Current
IDSS
VDS = -20 V, VGS = 0 V -1
mA
Zero Gate Voltage Drain Current IDSS VDS = -20 V, VGS = 0 V, TJ = 55_C-10 mA
On State Drain Currenta
ID( )
VDS v -5 V, VGS = -4.5 V -6
A
On-State Drain CurrentaID(on) VDS v -5 V, VGS = -2.5 V -3 A
Drain Source On Resistancea
rDS( )
VGS = - 4.5 V, ID = -2.8 A 0.105 0.130
W
Drain-Source On-ResistancearDS(on) VGS = -2.5 V, ID = -2.0 A 0.145 0.190 W
Forward Transconductanceagfs VDS = -5 V, ID = - 2.8 A 6.5 S
Diode Forward Voltage VSD IS = -1.6 A, VGS = 0 V -0.80 -1.2 V
Dynamicb
Total Gate Charge Qg5.8 10
Gate-Source Charge Qgs VDS = -6 V, VGS = - 4.5 V
ID ^ -2.8 A 0.85 nC
Gate-Drain Charge Qgd
.
1.70
Input Capacitance Ciss 415
Output Capacitance Coss VDS = -6 V, VGS = 0, f = 1 MHz 223 pF
Reverse Transfer Capacitance Crss 87
Switchingc
Turn On Time
td(on) 13.0 25
Turn-On Time trVDD = -6 V, RL = 6 W
-
-
36.0 60
ns
Turn
-
Off Time
td(off)
D
^
-
.
,
GEN
=
- 4.5
RG = 6 W42 70
ns
T
urn-
Off Ti
me
tf34 60
Notes
a. Pulse test: PW v300 ms duty cycle v2%.
b. For DESIGN AID ONLY, not subject to production testing.
c. Switching time is essentially independent of operating temperature.
Si2301DS
Vishay Siliconix
Document Number: 70627
S-31990—Rev. E, 13-Oct-03
www.vishay.com
3
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
Output Characteristics Transfer Characteristics
VDS - Drain-to-Source Voltage (V)
- Drain Current (A)ID
VGS - Gate-to-Source Voltage (V)
- Drain Current (A)ID
0
2
4
6
8
10
012345
0
2
4
6
8
10
0.0 0.5 1.0 1.5 2.0 2.5 3.0
TC = -55_C
125_C
0, 0.5, 1 V
2.5 V
VGS = 5, 4.5, 4, 3.5, 3 V
1.5 V
2 V
0
200
400
600
800
1000
036912
0.6
0.8
1.0
1.2
1.4
1.6
1.8
-50 0 50 100 150
0
1
2
3
4
5
02468
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0246810
Gate Charge
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
VDS - Drain-to-Source Voltage (V)
C - Capacitance (pF)
VGS
Crss
Coss
Ciss
VDS = 6 V
ID = 2.8 A
- On-Resistance (rDS(on) W)
ID - Drain Current (A)
Capacitance
On-Resistance vs. Junction Temperature
VGS = 4.5 V
ID = 2.8 A
TJ - Junction Temperature (_C)
(Normalized)
- On-Resistance (rDS(on) W)
VGS = 2.5 V
VGS = 4.5 V
25_C
Si2301DS
Vishay Siliconix
www.vishay.com
4
Document Number: 70627
S-31990—Rev. E, 13-Oct-03
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.01 0.10 1.00 10.00
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Power (W)
-0.2
-0.1
0.0
0.1
0.2
0.3
0.4
-50 0 50 100 150
0.0
0.1
0.2
0.3
0.4
0.5
0.6
02468
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
Threshold Voltage Single Pulse Power
Normalized Thermal Transient Impedance, Junction-to-Ambient
Square Wave Pulse Duration (sec)
2
1
0.1
0.01
10-4 10-3 10-2 10-1 1
Normalized Effective Transient
Thermal Impedance
30
- On-Resistance (rDS(on) W)
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
- Source Current (A)IS
TJ - Temperature (_C) Time (sec)
Variance (V)VGS(th)
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
ID = 2.8 A
ID = 250 mA
10
1
10
TC = 25_C
Single Pulse
14
12
8
4
0
TJ = 25_C
TJ = 150_C
2
6
10