December 2017
DocID030875 Rev 2
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This is information on a product in full production.
www.st.com
STWA35N65DM2
N-channel 650 V, 0.093 Ω typ., 32 A MDmesh™ DM2
Power MOSFET in a TO-247 long leads package
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order code
VDS
RDS(on)
max.
ID
PTOT
STWA35N65DM2
650 V
0.110 Ω
32 A
250 W
Fast-recovery body diode
Extremely low gate charge and input
capacitance
Low on-resistance
100% avalanche tested
Extremely high dv/dt ruggedness
Zener-protected
Applications
Switching applications
Description
This high voltage N-channel Power MOSFET is
part of the MDmesh™ DM2 fast recovery diode
series. It offers very low recovery charge (Qrr)
and time (trr) combined with low RDS(on), rendering
it suitable for the most demanding high efficiency
converters and ideal for bridge topologies and
ZVS phase-shift converters.
Table 1: Device summary
Order code
Marking
Package
Packing
STWA35N65DM2
35N65DM2
TO-247 long leads
Tube
Contents
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Contents
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics ................................................................ 4
2.1 Electrical characteristics (curves) ...................................................... 6
3 Test circuits ..................................................................................... 8
4 Package information ....................................................................... 9
4.1 TO-247 long leads package information .......................................... 9
5 Revision history ............................................................................ 11
STWA35N65DM2
Electrical ratings
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1 Electrical ratings
Table 2: Absolute maximum ratings
Symbol
Parameter
Value
Unit
VGS
Gate-source voltage
±25
V
ID
Drain current (continuous) at Tcase = 25 °C
32
A
Drain current (continuous) at Tcase = 100 °C
20
IDM(1)
Drain current (pulsed)
90
A
PTOT
Total dissipation at Tcase = 25 °C
250
W
dv/dt(2)
Peak diode recovery voltage slope
50
V/ns
dv/dt(3)
MOSFET dv/dt ruggedness
50
Tstg
Storage temperature range
-55 to 150
°C
Tj
Operating junction temperature range
Notes:
(1)Pulse width is limited by safe operating area.
(2)ISD ≤ 32 A, di/dt=900 A/μs, VDS peak < V(BR)DSS, VDD = 80% V(BR)DSS
(3)VDS ≤ 520 V
Table 3: Thermal data
Symbol
Parameter
Value
Unit
Rthj-case
Thermal resistance junction-case
0.5
°C/W
Rthj-amb
Thermal resistance junction-ambient
50
Table 4: Avalanche characteristics
Symbol
Parameter
Value
Unit
IAR
Avalanche current, repetitive or non-repetitive
4
A
EAS(1)
Single pulse avalanche energy
1150
mJ
Notes:
(1)Starting Tj = 25 °C, ID = IAR, VDD = 50 V.
Electrical characteristics
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2 Electrical characteristics
(Tcase = 25 °C unless otherwise specified)
Table 5: Static
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source breakdown
voltage
VGS = 0 V, ID = 1 mA
650
V
IDSS
Zero gate voltage drain
current
VGS = 0 V, VDS = 650 V
1
µA
VGS = 0 V, VDS = 650 V,
Tcase = 125 °C(1)
100
IGSS
Gate-body leakage
current
VDS = 0 V, VGS = ±25 V
±5
µA
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250 µA
3
4
5
V
RDS(on)
Static drain-source on-
resistance
VGS = 10 V, ID = 16 A
0.093
0.110
Ω
Notes:
(1)Defined by design, not subject to production test.
Table 6: Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Ciss
Input capacitance
VDS = 100 V, f = 1 MHz,
VGS = 0 V
-
2540
-
pF
Coss
Output capacitance
-
115
-
Crss
Reverse transfer
capacitance
-
2.5
-
Coss eq.(1)
Equivalent output
capacitance
VDS = 0 to 520 V, VGS = 0 V
-
204
-
pF
RG
Intrinsic gate resistance
f = 1 MHz, ID = 0 A
-
4.2
-
Ω
Qg
Total gate charge
VDD = 520 V, ID = 32 A, VGS = 0
to 10 V (see Figure 15: "Test
circuit for gate charge behavior")
-
56.3
-
nC
Qgs
Gate-source charge
-
12.7
-
Qgd
Gate-drain charge
-
27.6
-
Notes:
(1)Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS.
Table 7: Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on delay time
VDD = 325 V, ID = 16 A,
RG = 4.7 Ω, VGS = 10 V (see
Figure 14: "Test circuit for
resistive load switching times"
and Figure 19: "Switching time
waveform")
-
23.4
-
ns
tr
Rise time
-
23
-
td(off)
Turn-off delay time
-
72
-
tf
Fall time
-
10.4
-
STWA35N65DM2
Electrical characteristics
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Table 8: Source-drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain current
-
32
A
ISDM(1)
Source-drain current
(pulsed)
-
90
A
VSD(2)
Forward on voltage
VGS = 0 V, ISD = 32 A
-
1.6
V
trr
Reverse recovery time
ISD = 32 A, di/dt = 100 A/µs,
VDD = 60 V (see Figure 16: "Test
circuit for inductive load
switching and diode recovery
times")
-
100
ns
Qrr
Reverse recovery
charge
-
0.42
µC
IRRM
Reverse recovery
current
-
8.4
A
trr
Reverse recovery time
ISD = 32 A, di/dt = 100 A/µs,
VDD = 60 V, Tj = 150 °C (see
Figure 16: "Test circuit for
inductive load switching and
diode recovery times")
-
205
ns
Qrr
Reverse recovery
charge
-
1.8
µC
IRRM
Reverse recovery
current
-
17.6
A
Notes:
(1)Pulse width is limited by safe operating area.
(2)Pulse test: pulse duration = 300 µs, duty cycle 1.5%
Electrical characteristics
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2.1 Electrical characteristics (curves)
Figure 2: Safe operating area
Figure 3: Thermal impedance
Figure 4: Output characteristics
Figure 5: Transfer characteristics
Figure 6: Gate charge vs gate-source voltage
Figure 7: Static drain-source on-resistance
STWA35N65DM2
Electrical characteristics
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Figure 8: Capacitance variations
Figure 9: Normalized gate threshold voltage vs
temperature
Figure 10: Normalized on-resistance vs temperature
Figure 11: Normalized V(BR)DSS vs temperature
Figure 12: Output capacitance stored energy
Figure 13: Source- drain diode forward
characteristics
Test circuits
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3 Test circuits
Figure 14: Test circuit for resistive load
switching times
Figure 15: Test circuit for gate charge
behavior
Figure 16: Test circuit for inductive load
switching and diode recovery times
Figure 17: Unclamped inductive load test
circuit
Figure 18: Unclamped inductive waveform
Figure 19: Switching time waveform
STWA35N65DM2
Package information
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4 Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
4.1 TO-247 long leads package information
Figure 20: TO-247 long leads package outline
Package information
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Table 9: TO-247 long leads package mechanical data
Dim.
mm
Min.
Typ.
Max.
A
4.90
5.00
5.10
A1
2.31
2.41
2.51
A2
1.90
2.00
2.10
b
1.16
1.26
b2
3.25
b3
2.25
c
0.59
0.66
D
20.90
21.00
21.10
E
15.70
15.80
15.90
E2
4.90
5.00
5.10
E3
2.40
2.50
2.60
e
5.34
5.44
5.54
L
19.80
19.92
20.10
L1
4.30
P
3.50
3.60
3.70
Q
5.60
6.00
S
6.05
6.15
6.25
STWA35N65DM2
Revision history
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5 Revision history
Table 10: Document revision history
Date
Revision
Changes
21-Jul-2017
1
Initial release
06-Dec-2017
2
Document status changed from preliminary to production data.
Updated Table 2: "Absolute maximum ratings" and Table 8: "Source-
drain diode".
Updated Section 2.1: "Electrical characteristics (curves)".
Updated Figure 2: "Safe operating area".
Minor text changes.
STWA35N65DM2
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