TDC1016C2A9(FSC-RAY) - e2v Aerospace & Defense

MIL-M-38510/757C

14 November 2003

SUPERSEDING

MIL-M-38510/757B

14 March 2003

MILITARY SPECIFICATION

MICROCIRCUITS, DIGITAL, ADVANCED CMOS,

BUFFER GATES, MONOLITHIC SILICON, POSITIVE LOGIC

This specification is approved for use by all Departments

and Agencies of the Department of Defense.

1. SCOPE

1.1 Scope. This specification covers the detail requirements for monolithic silicon, advanced CMOS, logic microcircuits.

Two product assurance classes and a choice of case outlines, lead finishes, and radiation hardness assurance (RHA) are

provided and are reflected in the complete Part or Identifying Number (PIN). For this product, the requirements of MIL-M-38510

have been superseded by MIL-PRF-38535 (see 6.3).

1.2 Part or identifying number (PIN). The PIN should be in accordance with MIL-PRF-38535 and as specified herein.

1.2.1 Device types. The device types should be as follows:

Device type Circuit

01 Hex inverter

02 Hex inverter Schmitt trigger

03 Octal buffer/line driver with three-state outputs

04 Octal buffer/line driver with three-state outputs

05 Octal buffer/line driver with three-state outputs

06 1/

07 1/

08 1/

09 1/

10 Octal inverting bus driver with three-state outputs

11 Octal noninverting bus driver with three-state outputs

1.2.2 Device class. The device class should be the product assurance level as defined in MIL-PRF-38535.

1/ Devices 06 – 09 were intended to be added in the future, see 6.7.

Comments, suggestions, or questions on this document should be addressed to: Commander, Defense

Supply Center Columbus, ATTN: DSCC-VAC, 3990 East Broad St., Columbus, OH 43216-5000, or email to

cmos@dscc.dla.mil. Since contact information can change, you may want to verify the currency of this

address infor mat ion us ing the ASSIST Online databa se at ww w . dodssp.d aps .mil.

AMSC N/A FSC 5962

INCH

-

POUN

D

Reactivated after 14 Nov. 2003 and may be used for new and existing designs and acquisitions.

MIL-M-38510/757C

2

1.2.3 Case outlines. The case outlines should be as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style

C GDIP1-T14 or CDIP2-T14 14 Dual-in-line

D GDFP1-F14 or CDFP2-F14 14 Flat pack

R GDIP1-T20 or CDIP2-T20 20 Dual-in-line package

S GDFP2-F20 or CDFP3-F20 20 Flat pack

Y GDFP1-G14 14 Flat pack with gull wing

Z GDFP1-G20 20 Flat pack with gull wing

2 CQCC1-N20 20 Square chip carrier

1.3 Absolute maximum ratings. 1/ 2/

Supply voltage range (VCC)......................................................................................... -0.5 V dc to +6.0 V dc

DC input voltage range (VIN)....................................................................................... -0.5 V dc to VCC +0.5 V dc

DC output voltage range (VOUT).................................................................................. -0.5 V dc to VCC + 0.5 V dc

Clamp diode curren t (IIK, IOK)...................................................................................... ±20 mA

DC output current (IOUT).............................................................................................. ±50 mA

DC VCC or GND current (ICC, IGND).............................................................................. ±100 mA

Storage temperature range (TSTG).............................................................................. -65 °C to +150°C

Maximum power dissipation (PD)................................................................................ 500 mW

Lead temperature (solderin g, 10 seco nds)................................................................. +300°C

Thermal resistance, junction-to-case (ΘJC)................................................................. See MIL-STD-1835

Junction temperature (TJ)........................................................................................... +175°C

Case operating temperature (TC)................................................................................ -55°C to +125°C

1.4 Recommended operating conditions. 2/ 3/ 4/

Supply voltage range (VCC)......................................................................................... +3.0 V dc to +5.5 V dc

Input voltage range (VIN)............................................................................................. +0.0 V dc to VCC

Output voltage range (VOUT) ....................................................................................... +0.0 V dc to VCC

Case operating temperature range (TC)...................................................................... -55°C to +125°C

Input low (VIL) maximum voltage ................................................................................ 0.90 V dc at VCC = 3.0 V dc

1.35 V dc a t VCC = 4.5 V dc

1.65 V dc a t VCC = 5.5 V dc

Input high (VIH) minimum voltage................................................................................ 2.10 V dc at VCC = 3.0 V dc

3.15 V dc a t VCC = 4.5 V dc

3.85 V dc a t VCC = 5.5 V dc

Input rise and fall rate (tr, tf) max imum:

(device types 01, 03, 04, 05 and 11), VCC = 3.6 V, VCC = 5.5 V............................... 8 ns/V

1.5 Radiation features.

Maximum total dose available (dose rate = 50 – 300 rads (Si)/s):

Device types 04, and 11........................................................................................ 100 krads (Si)

Device types 01, 02, 03. and 05 ............................................................................ 300 krads (Si)

1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the

maximum levels may degrade performance and affect reliability. The maximum junction temperature may be exceeded for

allowable short duration burn-in screening conditions in accordance with MIL-PRF-38535.

2/ Unless otherwise noted, all voltages are referenced to GND.

3/ Operation from 2.0 V dc to 3.0 V dc is provided for compatibility with data retention and battery back-up systems. Data

retention implies no input transitions and no stored data loss with the following conditions: VIH ≥ 70 percent of VCC, VIL ≤ 30

percent of VCC, VOH ≥ 70 percent of VCC at –20 µA, VOL ≤ 30 percent of VCC at 20 µA.

4/ Unless otherwise specified, the values listed above shall apply over the full VCC and TC recommended operating range.

MIL-M-38510/757C

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2. APPLICABLE DOCUMENTS

2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does

not include docum ents cited in other sectio ns of this specifica t ion or recommended for additional information or as examples.

While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all

specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed.

2.2 Government documents.

2.2.1 Specifications and Standards. The following specifications and standards form a part of this specification to the extent

specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract.

DEPARTMENT OF DEFENSE SPECIFICATION

MIL-PRF-38535 - Integrated Circuits (Microcircuits) Manufacturing, General Specification for.

DEPARTMENT OF DEFENSE STANDARDS

MIL-STD-883 - Test Method Standard Microcircuits.

MIL-STD-1835 - Interface Standard Electronic Component Case Outlines.

(Copies of these documents are available online at http://assist.daps.dla.mil/quicksearch/ or www.dodssp.daps.mil or from the

Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)

2.3 Non-Government publications. The following document(s) form a part of this document to the extent specified herein.

Unless otherwise specified, the issues of these documents are those cited in the solicitation.

ELECTRONIC INDUSTRIES ALLIANCE (EIA)

EIA/JEDEC Standard No. 78 - IC Latch-Up Test

JEDEC Standard No. 20 - Standard for Description of 54/74ACXXXXX and 54/74ACTXXXXX Advanced High-Speed

CMOS Devices

(Copies of these documents are available on line at http://www/jedec.org or from Electronics Industries Alliance, 2500 Wilson

Boulevard, Arlington, VA 22201-3834).

2.4 Order of precedence. In the event of a conflict between the text of this document and the references cited herein, the

text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless

a specific exemption has been obtained.

MIL-M-38510/757C

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3. REQUIREMENTS

3.1 Qualification. Microcircuits furnished under this specification shall be products that are manufactured by a manufacturer

authorized by the qualifying activity for listing on the applicable qualified manufacturers list before contract award (see 4.3 and

6.4).

3.2 Item requirements. The individual item requirements shall be in accordance with MIL-PRF-38535 and as specified

herein or as modified in the device manufacturer's Quality Management (QM) plan. The modification in the QM plan shall not

affect the form, fit, or function as described herein.

3.3 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified

in MIL-PRF-38535 and here in.

3.3.1 Terminal connections. The terminal connections shall be as specified on figure 1.

3.3.2 Truth tables. The truth tables shall be as specified on figure 2.

3.3.3 Schematic circuits. The schemati c circu its sh all be ma intai ned by the manufacturer and made available to the

qualifying activity or preparing activity upon request.

3.3.4 Case outlines. The case outlines shall be as specified in 1.2.3 herein.

3. 4 Electrical performance characteristics and post irradiation end-point electrical parameter limits. Unless otherwise

specified, the electrical performance characteristics and postirradiation end-po int ele ctri cal param eter li mits are as specif i ed in

table I and apply over the case operating temperature range specified. Test conditions for these specified characteristics and

limits are as specifi ed in table I .

3.5 Lead material and finish. The lead material and finish shall be in accordance with MIL-PRF-38535 (see 6.6).

3.6 Electrical test requirements. The electrical test requirements for each device class shall be the subgroups specified in

table II. The electrical tests for each subgroup are described in table I. Radiation hardness assurance level M, D, P, L , R, and

F (see MIL-PRF-38535) in table I are postirradiation end-point electrical parameters.

3.7 Radiation hardness assurance identifier. The radiation hardness assurance identifier shall be in accordance with

MIL-PRF-38535 and herein (see 3.6).

3.8 Marking. Marking shall be in accordance with MIL-PRF-38535.

3.9 Microcircuit group assignment. The devices covered by this specification shall be in microcircuit group number 37 (see

MIL-PRF-38535, appendix A).

MIL-M-38510/757C

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TABLE I. Electrical performance characteristics.

Symbol

Device

type 2/

VCC Group A

subgroups

Limits 1/

Test and

MIL-STD-883

test method

Test Conditions 1/

-55°C ≤ TC ≤ +125°C

+3.0 V ≤ VCC ≤ +5.5 V

unless otherw ise sp eci f ied Min Max

Unit

VOH1

3/ For all inputs affecting output

under test, VIN = VIH or VIL

VIH = 2.10 V

VIL = 0.90 V

For all other inputs,

VIN = VCC or GND

IOH = -50 µA

All 3.0 V 1, 2, 3 2.9

VOH2

3/ For all inputs affecting output

under test, VIN = VIH or VIL

VIH = 3.15 V

VIL = 1.35 V

For all other inputs,

VIN = VCC or GND

IOH = -50 µA

All 4.5 V 1, 2, 3 4.4

For all inputs affecting output

under test, VIN = VIH or VIL

VIH = 3.85 V

VIL = 1.65 V

All 5.5 V 1, 2, 3 5.4

M 5.4

D 5.4

P, L, R

01-05, 11

5.4

VOH3

4/ 5/

For all other inputs,

VIN = VCC or GND

IOH = -50 µA

F 01, 02, 03,

05

1

5.4

VOH4

3/ For all inputs affecting output

under test, VIN = VIH or VIL

VIH = 2.10 V

VIL = 0.90 V

For all other inputs,

VIN = VCC or GND

IOH = -4.0 mA

All 3.0 V 1, 2, 3 2.4

VOH5

4/ 5/ For all inputs affecting output

under test, VIN = VIH or VIL

VIH = 3.15 V

VIL = 1.35 V

All 4.5 V 1, 2, 3 3.85

M 3.7

D 3.7

P, L, R

01-05, 11

3.7

High level

output voltage

3006

For all other inputs,

VIN = VCC or GND

IOH = -24 mA

F 01, 02, 03,

05

1

3.7

V

See footnotes at end of table.

MIL-M-38510/757C

6

TABLE I. Electrical performance characteristics - Continued.

Symbol

Device

type 2/

VCC Group A

subgroups

Limits 1/

Test and

MIL-STD-883

test method

Test Conditions 1/

-55°C ≤ TC ≤ +125°C

+3.0 V ≤ VCC ≤ +5.5 V

unless otherw ise sp eci f ied Min Max

Unit

VOH6

3/ For all inputs affecting output

under test, VIN = VIH or VIL

VIH = 3.85 V

VIL = 1.65 V

For all other inputs,

VIN = VCC or GND

IOH = -24 mA

All 5.5 V 1, 2, 3 4.7

For all inputs affecting output

under test, VIN = VIH or VIL

VIH = 3.85 V

VIL = 1.65 V

All

5.5 V 1, 2, 3 3.85

M 3.85

D 3.85

P, L, R

01-05, 11

3.85

High level

output voltage

3006

VOH7

4/ 5/

6/ For all other inputs,

VIN = VCC or GND

IOH = -50 mA

F 01, 02, 03,

05

1

3.85

V

VOL1

3/ For all inputs affecting output

under test, VIN = VIH or VIL

VIH = 2.10 V

VIL = 0.90 V

For all other inputs,

VIN = VCC or GND

IOL = 50 µA

All 3.0 V 1, 2, 3 0.1

VOL2

3/ For all inputs affecting output

under test, VIN = VIH or VIL

VIH = 3.15 V

VIL = 1.35 V

For all other inputs,

VIN = VCC or GND

IOL = 50 µA

All 4.5 V 1, 2, 3 0.1

For all inputs affecting output

under test, VIN = VIH or VIL

VIH = 3.85 V

VIL = 1.65 V

All 5.5 V 1, 2, 3 0.1

M 0.1

D 0.1

P, L, R

01-05, 11

0.1

VOL3

4/ 5/

For all other inputs,

VIN = VCC or GND

IOL = 50 µA

F 01, 02, 03,

05

1

0.1

1, 3 0.4

Low level output

voltage

3007

VOL4

3/ For all inputs affecting output

under test, VIN = VIH or VIL

VIH = 2.10 V

VIL = 0.90 V

For all other inputs,

VIN = VCC or GND

IOL = 12 mA

All 3.0 V

2 0.5

V

See footnotes at end of table.

MIL-M-38510/757C

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TABLE I. Electrical performance characteristics - Continued.

Symbol Device type

2/ VCC Group A

subgroups Limits 1/

Test and

MIL-STD-883

test method

Test Conditions 1/

-55°C ≤ TC ≤ +125°C

+3.0 V ≤ VCC ≤ +5.5 V

unless otherw ise sp eci f ied Min Max

Unit

1, 3 0.4 For all inputs affecting output

under test, VIN = VIH or VIL

VIH = 3.15 V

VIL = 1.35 V

All 2 0.5

M 0.4

D 0.4

P, L, R

01-05, 11

0.4

VOL5

4/ 5/

For all other inputs,

VIN = VCC or GND

IOL = 24 mA F 01, 02, 03, 05

4.5 V

1

0.4

1, 3 0.4 VOL6

3/ For all inputs affecting output

under test, VIN = VIH or VIL

VIH = 3.85V

VIL = 1.65 V

For all other inputs,

VIN = VCC or GND

IOL = 24 mA

All 5.5 V

2 0.5

For all inputs affecting output

under test, VIN = VIH or VIL

VIH = 3.85 V

VIL = 1.65 V

All 5.5 V 1, 2, 3

1.65

M 1.65

D 1.65

P, L, R

01-05, 11

1.65

Low level output

voltage

3007

VOL7

4/ 5/

6/

For all other inputs,

VIN = VCC or GND

IOL = 50 mA

F 01, 02, 03, 05

1

1.65

V

For input under test,

IIN = 1 mA All 1 0.4 1.5

M 0.4 1.5

D 0.4 1.5

P, L, R

01-05, 11

0.4 1.5

Positive input

clamp voltage

3022

VIC+

4/ 5/

F 01, 02, 03, 05

GND

1

0.4 1.5

V

For input under test,

IIN = -1 mA All 1 -0.4 -1.5

M -0.4 -1.5

D -0.4 -1.5

P, L, R

01-05, 11

-0.4 -1.5

Negative input

clamp voltage

3022

VIC-

4/ 5/

F 01, 02, 03, 05

Open

1

-0.4 -1.5

V

1 -0.1 IIL

4/ 5/ For input under test,

VIN = GND

For all other inputs,

All 5.5 V 2 -1.0

M -0.1

D -0.1

P, L, R

01-05, 11

-0.1

Input current

low

3009 VIN = VCC or GND

F 01, 02, 03, 05

1

-0.1

µA

See footnotes at end of table.

MIL-M-38510/757C

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TABLE I. Electrical performance characteristics - Continued.

Symbol Device type

2/ VCC Group A

subgroups Limits 1/ Test and

MIL-STD-883

test method

Test Conditions 1/

-55°C ≤ TC ≤ +125°C

+3.0 V ≤ VCC ≤ +5.5 V

unless otherw ise sp eci f ied Min Max

Unit

1 0.1 For input under test,

VIN = VCC

For all other inputs,

All 5.5 V

2 1.0

M 0.1

D 0.1

P, L, R

01-05, 11

0.1

Input current

high

3010

IIH

4/ 5/

VIN = VCC or

GND

F 01, 02, 03, 05

1

0.1

µA

1 1.0 01, 02 2 20.0

1 2.0

For all inputs,

VIN = VCC or GND 03-05

10, 11 2 40.0

µA

01, 03, 05, 11 15.0

02 60.0

M

04

1

50.0

µA

01, 03, 05, 11 75.0

02 320.0

D

04

1

240.0

µA

01, 03, 05, 11 0.7

02 1.5

P, L, R

04 1.2

01, 03, 05 0.7

mA

Quiescent su pply

current output

high

3005

ICCH

4/ 5/

F 02

5.5 V

1

1.5

1 1.0 01, 02 2 20.0

1 2.0

For all inputs,

VIN = VCC or GND 03-05

10, 11 2 40.0

01, 03, 05, 11 15.0

02 60.0

M

04

1

50.0

01, 03, 05, 11 75.0

02 320.0

D

04

1

240.0

µA

01, 03, 05, 11 0.7

02 1.5

P, L, R

04 1.2

01, 03, 05 0.7

Quiescent su pply

current output

low

3005

ICCL

4/ 5/

F 02

5.5 V

1

1.5

mA

1 2.0 For all inputs,

VIN = VCC or GND 03-05

10, 11 2 40.0

03, 05, 11 15.0 M 04 1 50.0

03, 05, 11 75.0 D 04 1 240.0

µA

03, 05, 11 0.7 P, L, R 04 1.2

Quiescent su pply

current output

three-state

3005

ICCZ

4/ 5/

F 03, 05

5.5 V

1

0.7

mA

See footnotes at end of table.

MIL-M-38510/757C

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TABLE I. Electrical performance characteristics - Continued.

Test and

MIL-STD-883

test method

Symbol Device

type 2/ VCC Group A

subgroups Limits 1/ Unit

Test Conditions 1/

-55°C ≤ TC ≤ +125°C

+3.0 V ≤ VCC ≤ +5.5 V

unless otherw ise sp eci f ied Min Max

1, 3 -0.5 VOUT = GND 03-05

10, 11 2 -10.0

M -1.0

D -3.0

P, L, R

03-05, 11

-20.0

Three-state

output leakage

current low

3020

IOZL

4/ 5/

7/

F 03, 05

5.5 V

1

-20.0

µA

1, 3 0.5 VOUT = VCC 03-05

10, 11 2 10.0

M 1.0

D 3.0

P, L, R

03-05, 11

20.0

Three-state

output leakage

current high

3021

IOZH

4/ 5/

7/

F 03, 05

5.5 V

1

20.0

µA

3.0 V 0.9 2.2

4.5 V 1.35 3.2

For input under test

VIN = GND

All other inputs

02

5.5 V

1, 2, 3

1.65 3.9

3.0 V 0.9 2.2 M 5.5 V 1.65 3.9

3.0 V 0.9 2.2 D 5.5 V 1.65 3.9

3.0 V 0.9 2.2

Positive-going

threshold

voltage

3006

VT+

4/ 5/

8/ at VCC or GND

P, L, R, F

02

5.5 V

1

1.65 3.9

V

3.0 V 0.5 2.1

4.5 V 0.9 3.15

For input under test

VIN = GND

All other inputs

02

5.5 V

1, 2, 3

1.1 3.85

3.0 V 0.5 2.1 M 5.5 V 1.1 3.85

3.0 V 0.5 2.1 D 5.5 V 1.1 3.85

3.0 V 0.5 2.1

Negative-going

threshold

voltage

3006

VT-

4/ 5/

9/ at VCC or GND

P, L, R, F

02

5.5 V

1

1.1 3.85

V

3.0 V 0.3 1.2

4.5 V 0.4 1.4

Calculated value

(VH = VT+ - VT-) 02

5.5 V

1, 2, 3

0.5 1.6

3.0 V 0.3 1.2 M 5.5 V 0.5 1.6

3.0 V 0.3 1.2 D 5.5 V 0.5 1.6

3.0 V 0.3 1.2 P, L, R 5.5 V 0.5 1.6

3.0 V 0.3 1.4

Hysteresis voltage VH

4/ 5/

F

02

5.5 V

1

0.5 1.9

V

See footnotes at end of table.

MIL-M-38510/757C

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TABLE I. Electrical performance characteristics - Continued.

Symbol

Device type

2/

VCC Group A

subgroups

Limits 1/

Test and

MIL-STD-883

test method

Test Conditions 1/

-55°C ≤ TC ≤ +125°C

+3.0 V ≤ VCC ≤ +5.5 V

unless otherw ise sp eci f ied Min Max

Unit

Input capacitan ce

3012 CIN See 4.4.1c

TC = +25°C All 0.0 V 4 10 pF

Output capacitance

3012 COUT See 4.4.1c

TC = +25°C 03-11 5.5 V 4 15 pF

01, 02 50 Power dissipation

capacitance CPD

10/ See 4.4.1c

TC = +25°C

03-11

5.0 V 4

65

pF

Low level

ground bounce

noise

VGBL

11/ 12/ VLD = 2.5 V

IOL = +24 mA,

see figure 3

All 4.5 V 4 0 2000 mV

High level

ground bounce

noise

VGBH

11/ 12/ VLD = 2.5 V

IOH = -24 mA,

see figure 3

All 4.5 V 4 0 2000 mV

Latch-up input/

output over-

voltage

ICC

(O/V1)

13/

tw ≥ 100 µs

tcool ≥ tw

5 µs ≤ tr ≤ 5 ms

5 µs ≤ tf ≤ 5 ms

Vtest = 6.0 V

VCCQ = 5.5 V

Vover = 10.5 V

All 5.5 V 2 200 mA

Latch-up input/

output positive

over-current

ICC

(O/I1+)

13/

tw ≥ 100 µs

tcool ≥ tw

5 µs ≤ tr ≤ 5 ms

5 µs ≤ tf ≤ 5 ms

Vtest = 6.0 V

VCCQ = 5.5 V

Itrigger = +120 mA

All 5.5 V 2 200 mA

Latch-up input/

output negative

over-current

ICC

(O/I1-)

13/

tw ≥ 100 µs

tcool ≥ tw

5 µs ≤ tr ≤ 5 ms

5 µs ≤ tf ≤ 5 ms

Vtest = 6.0 V

VCCQ = 5.5 V

Itrigger = -120 mA

All 5.5 V 2 200 mA

Latch-up supply

over-voltage ICC

(O/V2)

13/

tw ≥ 100 µs

tcool ≥ tw

5 µs ≤ tr ≤ 5 ms

5 µs ≤ tf ≤ 5 ms

Vtest = 6.0 V

VCCQ = 5.5 V

Vover = 9.0 V

All 5.5 V 2 100 mA

See footnotes at end of table.

MIL-M-38510/757C

11

TABLE I. Electrical performance characteristics - Continued.

Symbol Device

type 2/ VCC Group

A

subgrou

ps

Limits 1/ Test and

MIL-STD-883

test method

Test Conditions 1/

-55°C ≤ TC ≤ +125°C

+3.0 V ≤ VCC ≤ +5.5 V

unless otherw ise sp eci f ied Min Max

Unit

M L H

D L H

P, L, R

01-05, 11

L H

VIL = 0.45 V,

VIH = 2.50 V

Verify output

VOUT F 01, 02, 03,

05

3.0 V 7

L H

Truth table test

output voltage

3014

4/ 5/

14/

VIL = 0.60 V, VIH = 3.70 V

Verify output VOUT All 4.5 V 7, 8 L H

9, 11 1.0 8.0

01, 03 10 1.0 11.0

9, 11 1.0 13.5 02 10 1.0 16.0

9, 11 1.0 9.0 04, 05 10 1.0 12.0

9, 11 1.0 7.5

CL = 50 pF minimum,

RL = 500Ω

see figure 4

10, 11 10 1.0 9.0

01, 03 1.0 8.0

02 1.0 13.5

04, 05 1.0 9.0

M

11

9

1.0 7.5

01, 03 1.0 8.0

02 1.0 13.5

04, 05 1.0 9.0

D

11

9

1.0 7.5

01, 03 1.0 8.0

02 1.0 13.5

04, 05 1.0 9.0

P, L, R

11 1.0 7.5

01 1.0 8.0

02 1.0 14.0

03 1.0 9.5

Propagation

delay time, data

to output

3003

tPHL,

tPLH

4/ 5/

15/ 16/

F

05

3.0 V

9

1.0 13.5

ns

See footnotes at end of table.

MIL-M-38510/757C

12

TABLE I. Electrical performance characteristics - Continued.

Symbol Device type

2/ VCC Group A

subgroups Limits 1/ Test and

MIL-STD-883

test method

Test Conditions 1/

-55°C ≤ TC ≤ +125°C

+3.0 V ≤ VCC ≤ +5.5 V

unless otherw ise sp eci f ied Min Max

Unit

9, 11 1.0 6.5 01, 03 10 1.0 8.5

9, 11 1.0 10.0 02 10 1.0 12.0

9, 11 1.0 7.0 04, 05 10 1.0 9.5

9, 11 1.0 6.0

CL = 50 pF minimum,

RL = 500Ω

see figure 4

10, 11 10 1.0 7.0

01, 03 1.0 6.5

02 1.0 10.0

04, 05 1.0 7.0

M

11

9

1.0 6.0

01, 03 1.0 6.5

02 1.0 10.0

04, 05 1.0 7.0

D

11

9

1.0 6.0

01, 03 1.0 6.5

02 1.0 10.0

04, 05 1.0 7.0

P, L, R

11 1.0 6.0

01, 03 1.0 6.5

05 1.0 7.0

Propagation

delay time, data

to output

3003

tPHL,

tPLH

4/ 5/

15/ 16/

F

02

4.5 V

9

1.0 10.0

ns

9, 11 1.0 11.5 CL = 50 pF minimum,

RL = 500Ω

see figure 4

03-05

10, 11 10 1.0 13.0

M 1.0 11.5

D 1.0 11.5

P, L, R

03-05,11

1.0 11.5

05 1.0 13.5

F 03

3.0 V

9

1.0 11.5

ns

9, 11 1.0 9.0 CL = 50 pF minimum,

RL = 500Ω

see figure 4

03-05

10, 11 10 1.0 10.5

M 1.0 9.0

D 1.0 9.0

P, L, R

03-05, 11

1.0 9.0

Propagation

delay time,

output enable

3003

tPZL,

tPZH

4/ 5/

15/ 16/

F 03, 05

4.5 V

9

1.0 9.0

ns

See footnotes at end of table.

MIL-M-38510/757C

13

TABLE I. Electrical performance characteristics - Continued.

Symbol Device type

2/ VCC Group A

subgroups Limits 1/ Test and

MIL-STD-883

test method

Test Conditions 1/

-55°C ≤ TC ≤ +125°C

+3.0 V ≤ VCC ≤ +5.5 V

unless otherw ise sp eci f ied Min Max

Unit

9, 11 1.0 11.5 CL = 50 pF minimum,

RL = 500Ω

see figure 4

03-05

10, 11 10 1.0 13.0

M 1.0 11.5

D 1.0 11.5

P, L, R

03-05, 11

1.0 11.5

05 1.0 13.5

F 03

3.0 V

9

1.0 11.5

ns

9, 11 1.0 9.0 CL = 50 pF minimum,

RL = 500Ω

see figure 4

03-05

10, 11 10 1.0 10.5

M 1.0 9.0

D 1.0 9.0

P, L, R

03-05, 11

1.0 9.0

Propagation

delay time,

output disable

3003

tPLZ,

tPHZ

4/ 5/

15/ 16/

F 03, 05

4.5 V

9

1.0 9.0

ns

1/ Each input/output, as applicable shall be tested at the specified temperature for the specified limits. Output terminals not

designated shall be high level logic, low level logic, or open, except as follows:

a. VIC (pos) tests, the GND terminal can be open. TC = +25°C.

b. VIC (neg) tests, the VCC terminal shall be open. TC = +25°C.

c. All ICC tests, the output terminal shall be open. When performing these tests, the current meter shall be

placed in the circuit such that all current flows through the meter.

For negative and positive voltage and current values, the sign designates the potential difference in reference to GND and

the direction of current flow respectively and the absolute value of the magnitude, not the sign, is relative to the minimum and

maximum limits, as applicable, listed herein.

2/ The word “All” in the device type column means non-RHA limits for all device types. M, D, P, L, R, and F in the conditions

column specify the postirradiation limits for those device types specified in the device type column.

3/ This test is guaranteed, if not tested, to the limits specified in table I.

4/ RHA samples do not have to be tested at -55°C and +125°C prior to irradiation.

5/ When performing postirradiation electrical measurements for RHA level, TA = +25°C. Limits shown are guaranteed at

TA = +25°C ±5°C.

6/ Transmission driving tests are performed at VCC = 5.5 V dc with a 2 ms duration maximum.

7/ Three-state output conditions are required. For IOZL, set outputs to high state. For IOZH, set outputs to low state. Set output

enable control pins to VIL = VIL(MAX) and VIH = VIH(MIN), as required.

MIL-M-38510/757C

14

TABLE I. Electrical performance characteristics - Continued.

8/ Increment input in 50 mV steps beginning 100 mV below the minimum limit specified until the output changes from VCC to

GND. The input voltage where this transition occurs is VT+.

9/ Decrement input in 50 mV steps beginning 100 mV above the maximum limits specified until the output

changes from GND to VCC. The input voltage where this transition occurs is VT-.

10/ Power dissipation capacitance (CPD) determines the no load dynamic power consumption,

PD = (CPD + CL) (VCC x VCC)f + (ICC x VCC). The dynamic current consumption, IS = (CPD + CL)VCCf + ICC.

For both CPD and IS, f is the frequency of the input signal and d is the duty cycle of the input signal.

11/ This test is for qualification only. Ground bounce tests are performed on a nonswitching (quiescent) output and are used

to measure the magnitude of induced noise caused by other simultaneously switching outputs. The test is performed on

a low noise bench test fixture with all outputs fully dc loaded (IOL maximum and IOH maximum = i.e., ±24 mA) and 50 pF of

load capacitance (see figure 3). The loads must be located as close as possible to the device output. Inputs are then

conditioned with 1 MHz pulse (tr = tf = 3.5 ±1.5 ns) switching simultaneously and in phase such that one output is forced

low and all others (possible) are switched. The low level ground bounce noise is measured at the quiet output using a

F.E.T. oscilloscope probe with at least 1 MΩ impedance. Measurement is taken from the peak of the largest positive

pulse with respect to the nominal low level output voltage (figure 3). The device inputs are then conditioned such that the

output under test is at a high nominal VOH level. The high level ground bounce measurement is then measured from

nominal VOH level to the largest negative peak. This procedure is repeated such that all outputs are tested at a high and

low level with a maximum number of outputs switching.

12/ When using in asynchronous TTL compatible sytems, ground bounce (VGBL and VGBH) = 2000 mV can be a possible

problem.

13/ See EIA/JEDEC STD. No. 78 for electrically induced latch-up test methods and procedures. The values listed for Itrigger

and Vover are to be accurate within ±5 per cent.

14/ Tests shall be performed in sequence, attributes data only. Functional tests shall include the truth tables and other logic

patterns used for fault detection. Functional tests shall be performed in sequence as approved by the qualifying activity

on qualified devic es. H ≥ 2.5 V, L < 2.5 V; high inputs = 3.7 V and low inputs = 0.6 V for VCC = 4.5 V and H ≥ 1.5 V,

L < 1.5 V; high inputs = 2.5 V and low inputs = 0.45 V for VCC = 3.0 V. Tests at VCC = 3.0 V are for RHA specified devices

only (TA = +25°C ±5°C). Functional tests at VCC = 3.0 V are worst case for RHA specified devices.

15/ Device are tested at VCC = 3.0 V and VCC = 4.5 V at TC = +125°C for sample testing and at VCC = 3.0 V and VCC = 4.5 V at

TC = +25°C for screening. Other voltages of VCC and temperatures are guaranteed, if not tested. See 4.4.1d.

16/ AC limits at VCC = 5.5 V are equal to the limits at VCC = 4.5 V and guaranteed by testing at VCC = 4.5 V. Minimum ac limits

for VCC = 5.5 V are 1.0 ns and guaranteed by guardbanding the VCC = 4.5 V minimum limits to 1.5 ns. For propagation

delay tests, all paths must be tested.

MIL-M-38510/757C

15

Device types 01, 02 03, 05 04 10, 11

Case outlines C, D, Y 2 R, S, Z, 2 R, S, Z, 2 R, S, Z, 2

Pin number

1

2

3

4

5

6

7

8

9

10

11

12

13

14

15

16

17

18

19

20

1A

1Y

2A

2Y

3A

3Y

GND

4Y

4A

5Y

5A

6Y

6A

VCC

- - -

NC

1A

1Y

2A

NC

2Y

NC

3A

3Y

GND

NC

4Y

4A

5Y

NC

5A

NC

6Y

6A

VCC

OE1

1A1

2Y4

1A2

2Y3

1A3

2Y2

1A4

2Y1

GND

2A1

1Y4

2A2

1Y3

2A3

1Y2

2A4

1Y1

OE2

VCC

OE1

1A1

2Y4

1A2

2Y3

1A3

2Y2

1A4

2Y1

GND

2A1

1Y4

2A2

1Y3

2A3

1Y2

2A4

1Y1

OE2

VCC

OE1

1A

2A

3A

4A

5A

6A

7A

8A

GND

8Y

7Y

6Y

5Y

4Y

3Y

2Y

1Y

OE2

VCC

NC = No Connection

FIGURE 1. Terminal connections.

MIL-M-38510/757C

16

Device types 01 and 02 Device type 03

Truth table each gate Truth table each gate

Input Output Input Output

A Y OEn A Y

L

H H

L L

L

H

L

H

X

H

L

Z

Device type 04

Truth table each buffer

Input Output Input Output

OE1 1A 1Y OE2 2A 2Y

L

H

L

H

L

H

L

H

Z

L

H

L

H

L

H

Z

L

H

Device type 05

Truth table each buffer

Input Output Input Output

OE1 1A 1Y OE2 2A 2Y

L

H

L

H

L

H

L

H

Z

L

H

L

H

L

H

L

H

Z

Device type 10 Device type 11

Truth table each buffer Truth table each buffer

Input Output Input Output

OE1 OE2 A Y OE1 OE2 A Y

L

X

H

L

H

X

H

L

X

L

H

Z

L

X

H

L

H

X

L

H

X

L

H

Z

H = High level, L = Low level, Z = High-impedance, and X = Don’t care

FIGURE 2. Truth tables.

MIL-M-38510/757C

17

NOTE: Resistor and capacitor tolerances = ±10%.

FIGURE 3. Voltage levels for ground bounce.

MIL-M-38510/757C

18

NOTES:

1. tr, tf ≤ 3 ns, PRR ≤ 10 MHz, duty cycle = 50 percent.

2. CL = 50 pF minimum or equivalent (includes test jig and probe capacitance).

3. RL = 500Ω or equivalent.

4. RT = 50Ω or equivalent.

FIGURE 4. Switching waveforms and test circuit.

MIL-M-38510/757C

19

NOTES:

1. Preferred methods:

When measuring tPHZ or tPZH: VTEST = GND.

When measuring tPLZ or tPZL: VTEST = 2(VCC).

2. Alternate method:

When measuring tPHZ or tPZH: VTEST = OPEN.

When measuring tPLZ or tPZL: VTEST = 2(VCC).

3. CL = 50pF or equivalent (includes test jig and probe capacitance).

4. RL = 500Ω or equivalent.

5. RT = 50Ω or equivalent.

6. VIN = 0 V to VCC.

FIGURE 4. Switching waveforms and test circuit – Continued.

MIL-M-38510/757C

20

4. VERIFICATION

4.1 Sampling and inspection. Sampling and inspection procedures shall be in accordance with MIL-PRF-38535 or as

modified in the device manufacturer's Quality Management (QM) plan. The modification in the QM plan shall not affect the form,

fit, or function as described herein.

4.1.1 Burn-in and life test circuits. Burn-in and life test circuits shall be constructed so that the devices are stressed at the

maximum operating conditions stated in 4.2c or 4.2d, as applicable, or equivalent as approved by the qualifying activity.

4.2 Screening. Screening shall be in accordance with MIL-PRF-38535 and shall be conducted on all devices prior to

qualification and quality conformance inspection. The following additional criteria shall apply:

a. The burn-in test duration, test condition, and test temperature, or approved alternatives shall be as specified in the

device manufacturer's QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained

under document control by the device manufacturer's Technology Review Board (TRB) in accordance with

MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall

specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in

test method 1015 of MIL-STD-883.

b. Delete the sequence spe cif ied as initial (pre-burn-in) electrical parameters through interim (post-burn-in) electrical

parameters of method 5004 and substitute lines 1 through 7 of table II herein.

c. Static burn-in (test condition A) method 1015 of MIL-STD-883. Test duration for each static test shall be 24 hours

minimum for class S devices and in accordance with table I of method 1015 for class B devices.

(1) For static burn-in I, all inputs shall be connected to GND. Outputs may be open or connected to

VCC/2. Resistors R1 are optional on both inputs and open outputs, and required on outputs connected to

VCC/2 ±0.5 V. R1 = 220Ω to 47 kΩ.

(2) For static burn-in II, all inputs shall be connected through the R1 resistors to VCC. Outputs may be open or

connected to VCC/2 ±0.5 V. Resistors R1 are optional on open outputs, and required on outputs connected

to VCC/2 ±0.5 V. R1 = 220Ω to 47 kΩ.

(3) VCC = 5.5 V +0.5 V, -0. 00 V.

d. Dynamic burn-in, test condition D method 1015 of MIL-STD-883.

(1) Input resistors = 220Ω to 2 kΩ ±20 percent.

(2) Output resistors = 220Ω ±20 percent.

(3) VCC = 5.5 V +0.5 V, -0. 00 V.

(4) The output enable control pins shall be connected through the resistors in parallel to VCC or GND, as

applicable, to enable the outputs. All other inputs shall be connected through the resistors in parallel to a

clock pulse (CP). Outputs shall be connected through the resistors to VCC/2.

(5) CP = 25 kHz to 1 MHz square wave; duty cycle = 50 percent ±15 percent; VIH = 4.5 V to VCC,

VIL = 0 V ±0.5 V; tr, tf ≤ 100 ns.

e. Interim and final electrical test parameters shall be as specified in table II.

f. For class S devices, post dynamic burn-in, or class B devices, post static burn-in, electrical parameter

measurement s may , at the manufacturer’s opti on, be performed separately or included in the final electrical

parameter requirements.

MIL-M-38510/757C

21

4.2.1 Percent defective allowable (PDA).

a. The PDA for class S devices shall be 5 percent for static burn-in and 5 percent for dynamic burn-in, based on the

exact number of devices submitted to each separate burn-in.

b. Static burn-in I and II failures shall be cumulative for determining the PDA.

c. The PDA for class B devices shall be in accordance with MIL-PRF-38535 for static burn-in. Dynamic burn-in is not

required.

d. Those devices whose measured characteristics, after burn-in, exceed the specified delta (∆) limits or electrical

parameter limits specified in table I, subgroup 1, are defective and shall be removed from the lot. The verified

number of failed devices times 100 divided by the total number of devices in the lot initially submitted to burn-in shall

be used to determine the percent defective for the lot and the lot shall be accepted or rejected based on the specified

PDA.

4.3 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-38535.

4.4 Technology Conformance inspection (TCI). Technology conformance inspection shall be in accordance with

MIL-PRF-38535 and herein for groups A, B, C, D, and E inspections (see 4.4.1 through 4.4.5).

4.4.1 Group A inspection. Group A inspection shall be in accordance with table III of MIL-PRF-38535 and as follows:

a. Tests shall be performed in accordance with table II herein.

b. O/V and O/I (latch-up) tests and VGBL/H (ground bounce) tests shall be measured only for initial qualification and

after process or design changes which may affect the performance of the device. Latch-up test shall be considered

destructive. Test all applicable pins on 5 devices with no failures.

c. CIN, COUT, and CPD shall be measured only for initial qualification and after process or design changes which may

affect capacitance. CIN and COUT shall be measured between the designated terminal and GND at a frequency of

1 MHz. CPD shall be tested in accordance with the latest revision of JEDEC Standard No. 20 and table I herein.

For CIN, COUT, and CPD, test all applicable pins on five devices with zero failures.

d. Subgroups 9 and 11 shall be measured only for initial qualification and after process or design changes which may

affect dynamic performance.

e. Subgroups 7 and 8 tests shall be sufficient to verify the truth table.

4.4.2 Group B inspection. Group B inspection shall be in accordance with table II of MIL-PRF-38535.

MIL-M-38510/757C

22

TABLE II. Burn-in and electrical test requirements.

Class S device 1/ Class B device 1/

Line

no. MIL-PRF-38535

test requirements Reference

paragraph

Table I

subgroups

2/

Table III

delta limits

3/

Reference

paragraph

Table I

subgroups

2/

Table III

delta

limits 3/

1 Interim electrical

parameters 1 1

2 Static burn-in I

(method 1015) 4.2c

4.5.2 Req’d

4/ Not req’d

3 Same as line 1 1 ∆

4 Static burn-in II

(method 1015) 4.2c

4.5.2 Req’d

4/ 4.2c

4.5.2 Req’d

5/

5 Same as line 1 4.2e 1* ∆ 4.2e 1* ∆

6 Dynamic burn-in

(method 1015) 4.2d

4.5.2 Req’d

4/ Not req’d

7 Same as line 1 4.2e 1 ∆

8 Final electrical

parameters 1*, 2, 7*, 9

1*, 2, 7*, 9

5/

9 Group A test

requirements 4.4.1

1, 2, 3, 4, 7,

8, 9, 10, 11

4.4.1

1, 2, 3, 4, 7,

8, 9, 10, 11

10 Group B test

when using the

method 5005

QCI option

4.4.2

1, 2, 3, 7, 8,

9, 10, 11 ∆

11 Group C end-

point electrical

parameters

4.4.3

1, 2, 3, 7, 8,

9, 10, 11 ∆ 4.4.3 1, 2 ∆

12 Group D end-

point electrical

parameters

4.4.4 1, 2, 3 4.4.4 1, 2

13 Group E end-

point electrical

parameters

4.4.5 1, 7, 9 4.4.5 1, 7, 9

1/ Blank spaces indicate tests are not applicable.

2/ * indicates PDA applies to subgroups 1 and/or 7, as applicable (see 4.2.1).

3/ ∆ indicates delta limits and shall be required only on table I, subgroup 1, where specified, and the delta values shall be

computed with reference to the previous interim electrical parameters (line 1).

4/ On all class S lots, the device manufacturer shall maintain read-and-record data (as a minimum on disk) for burn-in electrical

parameters (group A, subgroup 1). For preburn-in and interim electrical parameters, the read-and-record requirements are for

delta measurements only.

5/ The device manufacturer may, at his option, either complete subgroup 1 electrical parameter measurements, including delta

measurements, within 96 hours after burn-in completion (removal of bias); or may complete subgroup 1 electrical

measurements without delta measurements within 24 hours after burn-in completion (removal of bias). When the

manufact urer ele cts to perfor m the subgroup 1 electr ic al para meter measurements without delta measurements, there is no

requirement to perform the pre burn-in electrical tests (first interim electrical parameters test in table II).

MIL-M-38510/757C

23

TABLE III. Delta limits at 25°C.

Parameter 1/ Device types Limits

ICCZ, ICCH, ICCL All

±100 nA

1/ The above parameters shall be recorded before and

after the required burn-in and life tests to determine deltas (∆).

4.4.3 Group C inspection. Group C inspection shall be in accordance with table IV of MIL-PRF-38535 and as follows:

a. End-point electrical parameters shall be as specified in table II herein. Delta limits shall apply only to subgroup 1 of

group C inspection and shall consist of tests specified in table III herein.

b. The steady-state life test duration, test condition, and test temperature, or approved alternatives shall be as specified

in the device manufacturer's QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be

maintained under document control by the device manufacturer's Technology Review Board (TRB) in accordance

with MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit

shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified

in test method 1005 of MIL-STD-883.

4.4.4 Group D inspection. Group D inspection shall be in accordance with table V of MIL-PRF-38535. End-point electrical

parameters shall be as specified in table II herein.

4.4.5 Group E inspection. Group E inspection is required only for parts intended to be marked as radiation hardness

assured (see 3.7 herein). RHA levels for device classes B and S shall be as specified in MIL-PRF-38535.

a. End-point electrical parameters shall be as specified in table II herein.

b. For device classes B and S, subgroups 1 and 2 in table V, method 5005 of MIL-STD-883 shall be tested as

appropriate for device construction.

c. When specified in the purchase order or contract, a copy of the RHA delta limits shall be supplied.

d. RHA tests for device classes B and S for levels M, D, P, L, R, and F shall be performed through each level to

determine at what levels the devices meet the RHA requirements. These RHA tests shall be performed for initial

qualification and after design or process changes which may affect the RHA performance of the devices.

e. Prior to irradiation, each selected sample shall be assembled in its qualified package. It shall pass the specified

group A electrical parameters in table I for subgroups specified in table II herein.

f. For device classes B and S, the devices shall be subjected to radiation hardness assured tests as specified in

MIL-PRF-38535 for the RHA level being tested. All device classes must meet the postirradiation end-point

electrical parameter limits as defined in table I at TA = +25°C ±5°C, after exposure, to the subgroups specified in

table II herein.

MIL-M-38510/757C

24

4.4.5.1 Total dose irradiation testing. Total dose irradiation testing shall be performed in accordance with MIL-STD-883,

method 1019 condition A, and as specified herein. Prior to and during total dose irradiation characterization and testing, the

devices for characterization shall be biased so that 50 percent are at inputs high and 50 percent are at inputs low, and the

devices for testing shall be biased to the worst case condition established during characterization. Devices shall be biased

as follows:

a. Input tested high, VCC = 5.5 V dc +5%, RCC = 10Ω±20%, VIN = 5.0 V dc +5%, RIN = 1 kΩ±20%, and all outputs

are open.

b. Inputs tested low, VCC = 5.5 V dc +5%, RCC = 10Ω±20%, VIN = 0.0 V dc, RIN = 1 kΩ±20%, and all outputs are

open.

4.4.5.1.1 Accelerated aging test. Accelerated aging shall be performed on class B and S devices requiring an RHA level

greater that 5k rads (Si). The post-anneal end point electrical parameter limits shall be as specified in table I herein and

shall be the preirradiation end point electrical parameter limit at +25°C ±5°C. Testing shall be performed at initial

qualification and after any design or process changes which may affect the RHA response of the device.

4.5 Methods of inspection. Methods of inspection shall be specified and as follows:

4.5.1 Voltage and current. Unless otherwise specified, all voltages given are referenced to the microcircuit GND terminal.

Currents given are conventional current and positive when flowing into the referenced terminal.

4.5.2 Burn-in and life test cool down procedures. When the burn-in and life tests are completed and prior to removal of bias

voltages, the devices under test (DUT) shall be cooled to within 10°C of their power stable condition at room temperature; then,

electrical parameter end-point measurements shall be performed.

4.5.3 Quiescent supply current. When performing quiescent supply current measurements (ICC), the meter shall be placed so

that all currents flow through the meter.

4.6 Data reporting. When specified in the purchase order or contract, a copy of the following data, as applicable, shall be

supplied.

a. Attributes data for all screening tests (see 4.2) and variables data for all static burn-in, dynamic burn-in, RHA tests and

steady-state life tests (see 3.6)

b. A copy of each radiograph.

c. The technology conformance inspection (TCI) data (see 4.4).

d. Parameter distribution data on parameters evaluated during burn-in (see 3.6).

e. Final electrical parameters data (see 4.2e).

f. RHA delta limits.

MIL-M-38510/757C

25

5. PACKAGING

5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or order (see 6.2).

When actual packaging of materiel is to be performed by DoD or in-house contractor personnel, these personnel need to contact

the responsible packaging activity to ascertain packaging requirements. Packaging requirements are maintained by the

Inventory Control Point's packaging activity within the Military Service or Defense Agency, or within the military service's system

commands. Packaging data retrieval is av aila ble from the managing Military Department's or Defense Agency's automated

packaging files, CD-ROM products, or by contacting the responsible packaging activity.

6. NOTES

(This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.)

6.1 Intended use. Microcircuits conforming to this specification are intended for original equipment design application and

logistic support of existing equipment.

6.2 Acquisition requirements. Acquisition documents should specify the following:

a. Title, number, and date of the specification.

b. PIN and compliance identifier, if applicable (see 1.2).

c. Requirements for delivery of one copy of the conformance inspection data pertinent to the device inspection lot to be

supplied with each shipment by the device manufacturer, if applicable.

d. Requirements for certificate of compliance, if applicable.

e. Requirements for notification of change of product or process to contracting activity in addition to notification to the

qualifying activity, if applicable.

f. Requirements for failure analysis (including required test condition of method 5003 of MIL-STD-883), corrective

action and reporting of results, if applicable.

g. Requirements for product assurance and radiation hardness assurance options.

h. Requirements for special carriers, lead lengths, or lead forming, if applicable. These requirements should not affect

the PIN. Unless otherwise specified, these requirements will not apply to direct purchase by or direct shipment to the

Government.

i. Requirements for "JAN" marking.

j. Packaging requirements (see 5.1).

6.3 Superseding information. The requirements of MIL-M-38510 have been superseded to take advantage of the available

Qualified Manufacturer Listing (QML) system provided by MIL-PRF-38535. Previous references to MIL-M-38510 in this

document have been replaced by appropriate references to MIL-PRF-38535. All technical requirements now consist of this

specification and MIL-PRF-38535. The MIL-M-38510 specification sheet number and PIN have been retained to avoid

adversely impacting existing government logistics systems and contractors parts lists.

6.4 Qualification. With respect to products requiring qualification, awards will be made only for products which are, at the

time of award of contract, qualified for inclusion in Qualified Manufacturers List QML-38535 whether or not such products have

actually been so listed by that date. The attention of the contractors is called to these requirements, and manufacturers are

urged to arrange to have the products that they propose to offer to the Federal Government tested for qualification in order that

they may be eligible to be awarded contracts or purchase orders for the products covered by this specification. Information

pertaining to qualification of products may be obtained from DSCC-VQ, 3990 E. Broad Street, Columbus, Ohio 43123-1199.

MIL-M-38510/757C

26

6.5 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein are defined in

MIL-PRF-38535, MIL-HDBK-1331, and as follows:

GND ............................................ Ground zero voltage potential

O/V............................................... Latch-up over-voltage

O/I................................................ Latch-up over-current

I

CC................................................. Quiescent supply current

I

IL.................................................. Input current low

I

IH.................................................. Input current high

T

C ................................................ Case temperature

T

A................................................. Ambient temperature

V

CC ............................................... Positive supply voltage

C

IN ................................................ Input terminal-to-GND capacitance

C

PD ............................................... Power dissipation ca pac itan c e

V

IC ................................................ Input clamp voltage

V

T- ................................................ Negative threshold voltage

V

T+ ............................................... Positive threshold voltage

V

H................................................. Hysteresis voltage

V

GB ............................................... Ground bounce voltage

t

w.................................................. Trigger duration (width)

6.6 Logistic support. Lead materials and finishes (see 3.5) are interchangeable. Unless otherwise specified, microcircuits

acquired for Government logistic support will be acquired to device class S for National Aeronautics and Space Administration or

class B for Department of Defense (see 1.2.2), lead material and finish A (see 3.5). Longer length leads and lead forming shall

not affect the part number.

6.7 Substitutability. The cross-reference information below is presented for the convenience of users. Microcircuits covered

by this specification will functionally replace the listed generic-industry type. Generic-industry microcircuit types may not have

equivalent operational performance characteristics across military temperature ranges, post irradiation performance or reliability

factors equivalent to MIL-M-38510 device types and may have slight physical variations in relation to case size. The presence

of this information should not be deemed as permitting substitution of generic-industry types for MIL-M-38510 types or as a

waiver of any of the provisions of MIL-PRF-38535.

Military device

type Generic-industry

type

01 54AC04

02 54AC14

03 54AC240

04 54AC241

05 54AC244

06 1/ 54AC365

07 1/ 54AC366

08 1/ 54AC367

09 1/ 54AC368

10 54AC540

11 54AC541

1/ Devices 06 through 09 as yet have not been characterized.

6.8 Changes from previous. Marginal notations are not used in this revision to identify changes with respect to the previous

issue due to the extensiveness of changes.

MIL-M-38510/757C

27

CONCLUDING MATERIAL

Custodians: Preparing activity:

Army - CR DLA - CC

Navy - EC

Air Force - 11

NASA - NA

DLA - CC

Review activities:

Army - MI, SM (Project 5962-1985)

Navy - AS, CG, MC, SH, TD

Air Force 03, 19, 99