NTTFS4932N Power MOSFET 30 V, 79 A, Single N-Channel, m8FL Features * * * * Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com V(BR)DSS RDS(on) MAX Applications * * * * 4.0 mW @ 10 V 30 V Low-Side DC-DC Converters Power Load Switch Notebook Battery Management Motor Control N-Channel MOSFET Parameter D (5-8) Symbol Value Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGS 20 V ID 18 A Continuous Drain Current RqJA (Note 1) TA = 25C Power Dissipation RqJA (Note 1) TA = 25C PD 2.2 W Continuous Drain Current RqJA 10 s (Note 1) TA = 25C ID 25.5 A Continuous Drain Current RqJA (Note 2) TA = 85C S (1,2,3) MARKING DIAGRAM 18.5 TA = 25C PD TA = 25C ID TA = 85C 4.5 W 11 A 8.0 Power Dissipation RqJA (Note 2) TA = 25C PD 0.85 W Continuous Drain Current RqJC (Note 1) TC = 25C ID 79 A Power Dissipation RqJC (Note 1) TC = 25C PD 43 W TA = 25C, tp = 10 ms IDM 235 A TJ, Tstg -55 to +150 C IS 39 A Drain to Source dV/dt dV/dt 6.0 V/ns Single Pulse Drain-to-Source Avalanche Energy (TJ = 25C, VDD = 50 V, VGS = 10 V, IL = 43 Apk, L = 0.1 mH, RG = 25 W) EAS 92.4 mJ Pulsed Drain Current TC = 85C Operating Junction and Storage Temperature Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8 from case for 10 s) G (4) 13 TA = 85C Steady State 79 A 5.5 mW @ 4.5 V MAXIMUM RATINGS (TJ = 25C unless otherwise stated) Power Dissipation RqJA 10 s (Note 1) ID MAX 57 TL 1 S S S G 1 WDFN8 (m8FL) CASE 511AB 4932 A Y WW G 4932 AYWWG G D D D D = Specific Device Code = Assembly Location = Year = Work Week = Pb-Free Package (Note: Microdot may be in either location) 260 C ORDERING INFORMATION Device Package Shipping NTTFS4932NTAG WDFN8 1500/Tape & Reel (Pb-Free) NTTFS4932NTWG WDFN8 5000/Tape & Reel (Pb-Free) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface-mounted on FR4 board using 1 sq-in pad, 1 oz Cu. 2. Surface-mounted on FR4 board using the minimum recommended pad size. (c) Semiconductor Components Industries, LLC, 2011 November, 2011 - Rev. 2 1 Publication Order Number: NTTFS4932N/D NTTFS4932N THERMAL RESISTANCE MAXIMUM RATINGS Symbol Value Unit Junction-to-Case (Drain) Parameter RqJC 2.9 C/W Junction-to-Ambient - Steady State (Note 3) RqJA 56.5 Junction-to-Ambient - Steady State (Note 4) RqJA 147.6 Junction-to-Ambient - (t 10 s) (Note 3) RqJA 27.5 3. Surface-mounted on FR4 board using 1 sq-in pad, 1 oz Cu. 4. Surface-mounted on FR4 board using the minimum recommended pad size (40 mm2, 1 oz. Cu). ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise specified) Parameter Symbol Test Condition Min Drain-to-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 30 Drain-to-Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS Gate-to-Source Leakage Current V 14 VGS = 0 V, VDS = 24 V mV/C TJ = 25C 1.0 TJ = 125C 10 IGSS VDS = 0 V, VGS = 20 V VGS(TH) VGS = VDS, ID = 250 mA mA 100 nA 2.2 V ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Negative Threshold Temperature Coefficient VGS(TH)/TJ Drain-to-Source On Resistance RDS(on) gFS 1.6 4.5 VGS = 10 V VGS = 4.5 V Forward Transconductance 1.2 ID = 20 A 2.5 ID = 10 A 2.5 ID = 20 A 3.6 ID = 10 A 3.6 VDS = 1.5 V, ID = 15 A mV/C 4.0 mW 5.5 46 S 3111 pF CHARGES AND CAPACITANCES Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 42 Total Gate Charge QG(TOT) 20 Threshold Gate Charge QG(TH) Gate-to-Source Charge QGS Gate-to-Drain Charge QGD Total Gate Charge QG(TOT) VGS = 0 V, f = 1.0 MHz, VDS = 15 V VGS = 4.5 V, VDS = 15 V, ID = 20 A 1064 nC 4.9 8.9 3.3 VGS = 10 V, VDS = 15 V, ID = 20 A 46.5 nC 15.5 ns SWITCHING CHARACTERISTICS (Note 6) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(on) tr td(off) VGS = 4.5 V, VDS = 15 V, ID = 15 A, RG = 3.0 W tf 22.6 29 4.8 5. Pulse Test: pulse width = 300 ms, duty cycle v 2%. 6. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 NTTFS4932N ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit SWITCHING CHARACTERISTICS (Note 6) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(on) tr td(off) ns 11 VGS = 10 V, VDS = 15 V, ID = 15 A, RG = 3.0 W tf 21.5 35.6 3.5 DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD TJ = 25C 0.8 TJ = 125C 0.7 tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = 20 A 1.1 ns 40 VGS = 0 V, dIS/dt = 100 A/ms, IS = 20 A V 21 19 QRR 37.5 nC Source Inductance LS 0.38 nH Drain Inductance LD Gate Inductance LG Gate Resistance RG PACKAGE PARASITIC VALUES TA = 25C 0.054 1.3 1.1 5. Pulse Test: pulse width = 300 ms, duty cycle v 2%. 6. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 3 2.0 W NTTFS4932N TYPICAL CHARACTERISTICS 140 VGS = 4.2 V to 7 V TJ = 25C 4.0 V 3.8 V 120 3.6 V 100 3.4 V 80 3.2 V 60 3.0 V 40 2.8 V RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) VDS 10 V 2.6 V 20 0 120 ID, DRAIN CURRENT (A) 10 V 2.4 V 0 1 2 3 100 80 60 TJ = 25C 40 20 TJ = 125C TJ = -55C 0 1.0 5 4 1.5 2.5 2.0 3.0 3.5 VDS, DRAIN-TO-SOURCE VOLTAGE (V) VGS, GATE-TO-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 0.007 ID = 20 A TJ = 25C 0.006 RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) ID, DRAIN CURRENT (A) 160 0.006 TJ = 25C 0.0055 0.005 0.0045 0.005 0.004 4.0 VGS = 4.5 V 0.004 0.0035 0.003 0.003 VGS = 10 V 0.0025 0.002 2 3 4 5 6 7 8 9 VGS (V) 10 0.002 20 40 50 60 70 80 90 100 110 120 130 140 ID, DRAIN CURRENT (A) Figure 3. On-Resistance vs. VGS Figure 4. On-Resistance vs. Drain Current and Gate Voltage 10,000 RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 1.8 1.7 ID = 20 A 1.6 VGS = 10 V 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 -50 -25 0 30 VGS = 0 V IDSS, LEAKAGE (nA) TJ = 150C 1000 25 50 75 100 125 150 TJ = 125C 100 10 TJ = 85C 5 10 15 20 25 TJ, JUNCTION TEMPERATURE (C) VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current vs. Voltage http://onsemi.com 4 30 NTTFS4932N 3800 3600 3400 3200 3000 2800 2600 2400 2200 2000 1800 1600 1400 1200 1000 800 600 400 200 0 VGS, GATE-TO-SOURCE VOLTAGE (V) C, CAPACITANCE (pF) TYPICAL CHARACTERISTICS Ciss VGS = 0 V TJ = 25C Coss Crss 0 5 10 15 20 25 30 7 6 5 4 Qgd Qgs 3 TJ = 25C VDD = 15 V VGS = 10 V ID = 20 A 2 1 0 0 4 8 12 16 20 24 28 32 36 40 44 48 Figure 7. Capacitance Variation Figure 8. Gate-to-Source and Drain-to-Source Voltage vs. Total Charge 30 VGS = 0 V td(off) IS, SOURCE CURRENT (A) t, TIME (ns) 8 Qg, TOTAL GATE CHARGE (nC) VDD = 15 V ID = 15 A VGS = 10 V tf 100 tr td(on) 10 1 10 100 10 5 TJ = 25C 0.5 0.6 0.7 0.8 0.9 1.0 Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 1 ms 10 ms VGS = 20 V Single Pulse TC = 25C RDS(on) Limit Thermal Limit Package Limit dc 1 10 EAS, SINGLE PULSE DRAIN-TO- SOURCE AVALANCHE ENERGY (mJ) 100 ms 10 0.01 0.1 TJ = 125C 15 VSD, SOURCE-TO-DRAIN VOLTAGE (V) 10 ms 0.1 20 RG, GATE RESISTANCE (W) 100 1 25 0 0.4 1000 ID, DRAIN CURRENT (A) QT 9 VDS, DRAIN-TO-SOURCE VOLTAGE (V) 1000 1 10 100 100 ID = 43 A 90 80 70 60 50 40 30 20 10 0 25 50 75 100 125 VDS, DRAIN-TO-SOURCE VOLTAGE (V) TJ, STARTING JUNCTION TEMPERATURE (C) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature http://onsemi.com 5 150 NTTFS4932N TYPICAL CHARACTERISTICS 100 Duty Cycle = 50% 20% 10% 5% 1 2% 1% 0.1 Single Pulse 0.01 0.000001 0.00001 0.0001 0.001 0.1 0.01 1 10 PULSE TIME (sec) Figure 13. Thermal Response 90 80 70 60 GFS (S) R(t) (C/W) 10 50 40 30 20 10 0 0 10 20 30 40 ID (A) 50 60 Figure 14. GFS vs. ID http://onsemi.com 6 70 80 100 1000 NTTFS4932N PACKAGE DIMENSIONS WDFN8 3.3x3.3, 0.65P CASE 511AB ISSUE C 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 0.20 C D A D1 B 2X 0.20 C 8 7 6 5 4X E1 E q c 1 2 3 4 A1 TOP VIEW 0.10 C A C 6X e 0.10 C SIDE VIEW DETAIL A SEATING PLANE DETAIL A q 8X 0.10 C A B 0.05 L 8X e/2 0.42 14 0.116 0.078 0.116 0.058 0.009 0.012 0.025 0.012 0.002 0.055 0 MAX 0.031 0.002 0.016 0.010 0.124 0.088 0.124 0.068 0.016 0.020 *** 0.022 0.008 0.063 12 4X 0.66 M E3 8 G INCHES NOM 0.030 *** 0.012 0.008 0.130 BSC 0.120 0.083 0.130 BSC 0.120 0.063 0.012 0.026 BSC 0.016 *** 0.017 0.005 0.059 *** MIN 0.028 0.000 0.009 0.006 0.65 PITCH PACKAGE OUTLINE K E2 MILLIMETERS MIN NOM MAX 0.70 0.75 0.80 0.00 *** 0.05 0.40 0.23 0.30 0.25 0.15 0.20 3.30 BSC 3.15 2.95 3.05 1.98 2.24 2.11 3.30 BSC 2.95 3.15 3.05 1.73 1.47 1.60 0.23 0.30 0.40 0.65 BSC 0.30 0.41 0.51 0.64 *** *** 0.30 0.43 0.56 0.06 0.13 0.20 1.60 1.40 1.50 0 *** 12 SOLDERING FOOTPRINT* C 4X DIM A A1 b c D D1 D2 E E1 E2 E3 e G K L L1 M 5 D2 BOTTOM VIEW 3.60 L1 0.75 2.30 0.57 0.47 2.37 3.46 DIMENSION: MILLIMETERS *For additional information on our Pb *Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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