© Semiconductor Components Industries, LLC, 2011
November, 2011 − Rev. 2
1Publication Order Number:
NTTFS4932N/D
NTTFS4932N
Power MOSFET
30 V, 79 A, Single N−Channel, m8FL
Features
•Low RDS(on) to Minimize Conduction Losses
•Low Capacitance to Minimize Driver Losses
•Optimized Gate Charge to Minimize Switching Losses
•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
•Low−Side DC−DC Converters
•Power Load Switch
•Notebook Battery Management
•Motor Control
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter Symbol Value Unit
Drain−to−Source Voltage VDSS 30 V
Gate−to−Source Voltage VGS ±20 V
Continuous Drain
Current RqJA (Note 1)
Steady
State
TA = 25°CID18 A
TA = 85°C 13
Power Dissipation RqJA
(Note 1)
TA = 25°C PD2.2 W
Continuous Drain
Current RqJA ≤ 10 s
(Note 1)
TA = 25°CID25.5 A
TA = 85°C 18.5
Power Dissipation
RqJA ≤ 10 s (Note 1)
TA = 25°C PD4.5 W
Continuous Drain
Current RqJA (Note 2)
TA = 25°CID11 A
TA = 85°C 8.0
Power Dissipation
RqJA (Note 2)
TA = 25°C PD0.85 W
Continuous Drain
Current RqJC (Note 1)
TC = 25°CID79 A
TC = 85°C 57
Power Dissipation
RqJC (Note 1)
TC = 25°C PD43 W
Pulsed Drain Current TA = 25°C, tp = 10 msIDM 235 A
Operating Junction and Storage Temperature TJ,
Tstg
−55 to
+150
°C
Source Current (Body Diode) IS39 A
Drain to Source dV/dt dV/dt 6.0 V/ns
Single Pulse Drain−to−Source Avalanche Energy
(TJ = 25°C, VDD = 50 V, VGS = 10 V,
IL = 43 Apk, L = 0.1 mH, RG = 25 W)
EAS 92.4 mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
ORDERING INFORMATION
http://onsemi.com
Device Package Shipping†
V(BR)DSS RDS(on) MAX ID MAX
30 V
4.0 mW @ 10 V
79 A
N−Channel MOSFET
D (5−8)
S (1,2,3)
G (4)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
WDFN8
(m8FL)
CASE 511AB
MARKING DIAGRAM
5.5 mW @ 4.5 V
NTTFS4932NTAG WDFN8
(Pb−Free)
1500/Tape & Reel
(Note: Microdot may be in either location)
1
4932 = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G= Pb−Free Package
1
NTTFS4932NTWG WDFN8
(Pb−Free)
5000/Tape & Reel
4932
AYWWG
G
D
D
D
D
S
S
S
G
NTTFS4932N
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2
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol Value Unit
Junction−to−Case (Drain) RqJC 2.9 °C/W
Junction−to−Ambient – Steady State (Note 3) RqJA 56.5
Junction−to−Ambient – Steady State (Note 4) RqJA 147.6
Junction−to−Ambient – (t ≤ 10 s) (Note 3) RqJA 27.5
3. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
4. Surface−mounted on FR4 board using the minimum recommended pad size (40 mm2, 1 oz. Cu).
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA30 V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ14 mV/°C
Zero Gate Voltage Drain Current IDSS VGS = 0 V,
VDS = 24 V
TJ = 25°C 1.0 mA
TJ = 125°C 10
Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±20 V ±100 nA
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250 mA1.2 1.6 2.2 V
Negative Threshold Temperature
Coefficient
VGS(TH)/TJ4.5 mV/°C
Drain−to−Source On Resistance RDS(on) VGS = 10 V
ID = 20 A 2.5 4.0 mW
ID = 10 A 2.5
VGS = 4.5 V
ID = 20 A 3.6 5.5
ID = 10 A 3.6
Forward Transconductance gFS VDS = 1.5 V, ID = 15 A 46 S
CHARGES AND CAPACITANCES
Input Capacitance Ciss
VGS = 0 V, f = 1.0 MHz, VDS = 15 V
3111 pF
Output Capacitance Coss 1064
Reverse Transfer Capacitance Crss 42
Total Gate Charge QG(TOT)
VGS = 4.5 V, VDS = 15 V, ID = 20 A
20 nC
Threshold Gate Charge QG(TH) 4.9
Gate−to−Source Charge QGS 8.9
Gate−to−Drain Charge QGD 3.3
Total Gate Charge QG(TOT) VGS = 10 V, VDS = 15 V, ID = 20 A 46.5 nC
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time td(on)
VGS = 4.5 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
15.5 ns
Rise Time tr22.6
Turn−Off Delay Time td(off) 29
Fall Time tf4.8
5. Pulse Test: pulse width = 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
NTTFS4932N
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ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter UnitMaxTypMinTest ConditionSymbol
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time td(on)
VGS = 10 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
11 ns
Rise Time tr21.5
Turn−Off Delay Time td(off) 35.6
Fall Time tf3.5
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage VSD VGS = 0 V,
IS = 20 A
TJ = 25°C 0.8 1.1 V
TJ = 125°C 0.7
Reverse Recovery Time tRR
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 20 A
40 ns
Charge Time ta21
Discharge Time tb19
Reverse Recovery Charge QRR 37.5 nC
PACKAGE PARASITIC VALUES
Source Inductance LS
TA = 25°C
0.38 nH
Drain Inductance LD0.054
Gate Inductance LG1.3
Gate Resistance RG1.1 2.0 W
5. Pulse Test: pulse width = 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
NTTFS4932N
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4
TYPICAL CHARACTERISTICS
10 V
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)
53210
0
40
80
120
4.03.53.02.01.51.0
0
20
40
60
Figure 3. On−Resistance vs. VGS Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
VGS (V) ID, DRAIN CURRENT (A)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)
30252015105
10
100
1000
10,000
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
IDSS, LEAKAGE (nA)
160
VGS = 4.2 V to 7 V
3.6 V
3.4 V
3.2 V
3.0 V
2.8 V
2.6 V
2.4 V
TJ = 25°CVDS ≥ 10 V
TJ = 25°C
TJ = 125°C
TJ = −55°C
VGS = 4.5 V
TJ = 25°C
VGS = 10 V
VGS = 0 V
TJ = 85°C
TJ = 150°C
TJ = 125°C
2.5
80
100
120
4.0 V
0.007
0.002
0.003
0.004
0.005
0.006
2345678910
ID = 20 A
TJ = 25°C
0.002
0.0025
0.003
0.0035
0.004
0.0045
0.005
0.0055
0.006
20 30 40 50 60 70 80 90 100 110 120 130 140
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
−50 −25 0 25 50 75 100 125 150
ID = 20 A
VGS = 10 V
20
60
100
140
4
3.8 V
NTTFS4932N
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5
TYPICAL CHARACTERISTICS
Figure 7. Capacitance Variation Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
VDS, DRAIN−TO−SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC)
2520151050
0
200
1200
1600
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
RG, GATE RESISTANCE (W)VSD, SOURCE−TO−DRAIN VOLTAGE (V)
100101
1
10
100
1000
0.90.80.7 1.00.60.50.4
0
5
10
15
20
25
30
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
VDS, DRAIN−TO−SOURCE VOLTAGE (V) TJ, STARTING JUNCTION TEMPERATURE (°C)
150125100755025
0
10
40
60
C, CAPACITANCE (pF)
VGS, GATE−TO−SOURCE VOLTAGE (V)
t, TIME (ns)
IS, SOURCE CURRENT (A)
ID, DRAIN CURRENT (A)
EAS, SINGLE PULSE DRAIN−TO−
SOURCE AVALANCHE ENERGY (mJ)
VGS = 0 V
TJ = 25°C
Ciss
Coss
Crss
TJ = 25°C
VDD = 15 V
VGS = 10 V
ID = 20 A
VDD = 15 V
ID = 15 A
VGS = 10 V
td(off)
td(on)
tr
tf
TJ = 25°C
TJ = 125°C
VGS = 0 V
VGS = 20 V
Single Pulse
TC = 25°C
RDS(on) Limit
Thermal Limit
Package Limit
100 ms
10 ms
1 ms
dc
ID = 43 A
2000
2800
20
30
50
70
400
600
800
1000
1400
1800
2200
2400
2600
10 ms
0
1
2
3
4
5
6
7
8
9
10
0 4 8 12162024283236404448
Qgs Qgd
0.01
0.1
1
10
100
1000
1 10 100
QT
30
0.1
3000
3800
3200
3400
3600
90
80
100
NTTFS4932N
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6
TYPICAL CHARACTERISTICS
Figure 13. Thermal Response
PULSE TIME (sec)
0.010.0010.00010.000010.000001
0.01
0.1
1
10
100
R(t) (°C/W)
0.1 1 10 100 1000
10%
Duty Cycle = 50%
20%
5%
2%
1%
Single Pulse
0
10
20
30
40
50
60
70
80
90
0 1020304050607080
GFS (S)
ID (A)
Figure 14. GFS vs. ID
NTTFS4932N
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7
PACKAGE DIMENSIONS
WDFN8 3.3x3.3, 0.65P
CASE 511AB
ISSUE C
M
0***
1.60
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH
PROTRUSIONS OR GATE BURRS.
1
56
TOP VIEW
SIDE VIEW
BOTTOM VIEW
D1
E1
D
E
B
A
0.20
0.20
2X
2X
DIM MIN NOM
MILLIMETERS
A0.70 0.75
A1 0.00
D1
E1
1.47 1.60
e
0.64
0.06 0.13
A
0.10
0.10
DETAIL A
14
8L1
e/2
8X
D2
G
E2
K
0.10 B
C
L
DETAIL A
A1
e
6X
c
4X
C
SEATING
PLANE
5
MAX
0.80
0.05
0.40
0.25
3.15
2.24
3.15
1.73
0.51
0.20
M
*For additional information on our Pb *Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting T
echniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
0.650.42
0.75 2.30
3.46
PACKAGE
8X
0.055 0.059
0***
0.063
12
0.028 0.030
0.000
0.006 0.008
0.025
0.002 0.005
0.031
0.002
0.016
0.010
0.124
0.088
0.124
0.068
0.020
0.008
MIN NOM
INCHES
MAX
7
8
PITCH
3.60
0.57
0.47
OUTLINE
DIMENSION: MILLIMETERS
3.30 BSC
3.30 BSC
0.130 BSC
0.130 BSC
2.37
0.66
4X
E3 0.23 0.30 0.40 0.009 0.012 0.016
E3
4X
234
qb
c
D
D2
E
E2
G
K
L
L1
q°°°°
0.30
1.40 1.50
*** *** *** ***
0.43 0.56 0.012 0.017 0.022
0.0160.012
0.410.30
0.65 BSC 0.026 BSC
0.058 0.063
0.116 0.120
3.05
2.95
1.98
2.95 3.05
2.11 0.078
0.116 0.120
0.083
*** ***
0.0120.009
C
C
0.23
0.15
0.30
0.20
CA
0.05
C
C
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NTTFS4932N/D
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