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S5668-021
16-element Si photodiode array
Long and narrow format by multiple arrays
S5668 series
www.hamamatsu.com
Selection guide
Type No. Scintillator Scintillator specifi cations Application example
Afterglow Cross-talk
S5668-021 None (epoxy
resin potting) - - General photometry
S5668-121 CsI (Tl) Large Low
X-ray non-destructive inspection
of slow-moving objects
(baggage inspection, etc.)
X-ray applications where signal
can be integrated
S5668-321 Ceramic Small Low
X-ray non-destructive inspection
of fast-moving objects
(baggage inspection, etc.)
S5668-421 Phosphor sheet Small May occur. X-ray non-destructive inspection
(at low X-ray intensity)
CsI scintillator of the S5668-121 has deliquescence. Avoid storing or using the S5668-121 at high humidity.
Handling precautions
Active area: 1.175 × 2.0 mm/one element
Element pitch: 1.575 mm
Mounted on a 1-inch (25.4 mm) long PC board
Long and narrow format by multiple arrays
S5668-021
S5668-121
S5668-421
S5668-321
The S5668 series is a 16-element Si photodiode linear array. Each element has an active area of 1.175 mm (width) × 2.0
mm (height) and is arrayed at an element pitch of 1.575 mm. The entire linear array is mounted on a 25.4 mm (1 inch)
long PC board. By linearly arranging two or more pieces of the S5668 series, a long and narrow photodiode array can be
easily confi gured at the same element pitch. For X-ray detection applications, the S5668-121 with a CsI (Tl) scintillator, the
S5668-321 with a ceramic scintillator and the S5668-421 with a fl uorescent paper are also available.
Non-destructive inspection, etc.
Features Applications
2
16-element Si photodiode array S5668 series
Absolute maximum ratings
Electrical and optical characterisitcs (Ta=25 °C, per 1 element)
Parameter Symbol S5668-021 S5668-121/-321/-421 Unit
Reverse voltage VR Max. 10 10 V
Operating temperature Topr -20 to +60 -10 to +60 °C
Storage temperature Tstg -20 to +80 -20 to +70 °C
Parameter Symbol Condition Min. Typ. Max. Unit
Spectral response range λ- 340 to 1100 - nm
Peak sensitivity wavelength λp- 960 - nm
Photo sensitivity S λ=540 nm 0.27 0.31 0.35 A/W
λ=λp0.54 0.60 0.66
Dark current IDVR=10 mV - 5 30 pA
Rise time tr VR=0 V, RL=1 kΩ
10 to 90 % - 0.1 - μs
Terminal capacitance Ct VR=0 V, f=10 kHz 20 30 40 pF
Noise equivalent power NEP VR=0 V, λ=540 nm - 9.3 × 10-15 - W/Hz1/2
X-ray sensitivity iscX *
-021 - - -
nA
-121 - 6.8 -
-321 - 3.4 -
-421 - 3.2 -
* These are for reference (X-ray tube voltage 120 kV, tube current 1.0 mA, aluminum fi lter t=6 mm, distance 830 mm), X-ray sensitivity
depends on the X-ray equipment operating and setup conditions.
Spectral response
Wavelength (nm)
Photo sensitivity (A/W)
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KMPDB0277EB
3
16-element Si photodiode array S5668 series
KMPDB0281EB
Emission spectrum of scintillator and spectral response
S5668-121 S5668-321
Relative emission intensity (%)
Quantum efficiency (%)
Wavelength (nm)
(Typ.)
0 1000 1200800600400200
0
40
20
60
80
100
0
40
20
60
80
100
Spectral
response
Emission
spectrum
of CsI (TI)
scintillator
Relative emission intensity (%)
Quantum efficiency (%)
Wavelength (nm)
(Typ.)
0 1000 1200800600400200
0
40
20
60
80
100
0
40
20
60
80
100
Spectral
response
Emission
spectrum
of ceramic
scintillator
Typical scintillator characteristics
Parameter Condition CsI (TI) Ceramic scintillator Unit
Peak emission wavelength 560 512 nm
X-ray absorption coeffi cient 100 keV 10 7 cm-1
Refractive index at peak emission wavelength 1.74 2.2 -
Decay constant 13μs
Afterglow 100 ms after X-ray turn off 0.3 0.01 %
Density 4.51 7.34 g/cm3
Color Transparent Light yellow-green -
Sensitivity non-uniformity ±10 ±5 %
KMPDB0282EB
4
16-element Si photodiode array S5668 series
KMPDA0229EB
Dimensional outlines (unit: mm, tolerance: ±1 mm unless otherwise noted)
S5668-021
S5668-121
0.6 ± 0.15
3.5 ± 0.5
1.0 ± 0.15
1.3
6.06.0 8.0
25.4+0
-0.3
P1.575 × 15 = 23.625
1.575
P 2.54 × 8 = 20.32
C-2.0
(Index mark)
2.54
2.0
4.2
15.24 ± 0.1
20.0 ± 0.2
123456789
10 11 12 13 14 15 16
(18 ×) 0.45
Fe Ni Co pin
Epoxy resin
Glass epoxy board
Active area
1.175 × 2.0
KC
KC
0.6 ± 0.15
3.5 ± 0.5
1.0 ± 0.15
1.3
6.0
6.0 8.0
25.4+0
-0.3
25.2 (CsI scintillator)
P1.575 × 15 = 23.625
1.575
P 2.54 × 8 = 20.32
C-2.0
(Index mark)
2.54
2.0
15.24 ± 0.1
3.1
(CsI scintillator)
20.0 ± 0.2
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10 11 12 13 14 15 16
(18 ×) 0.45
Fe Ni Co pin
Black resin coated
Scintillator array
3.0t: CsI (Tl)
Glass epoxy board
Active area
1.175 × 2.0
KC
KC
5.32
KMPDA0230EB
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16-element Si photodiode array S5668 series
KMPDA0231EA
KMPDA0232EA
S5668-321
S5668-421
0.6 ± 0.15
3.5 ± 0.5
1.0 ± 0.15
6.0
6.0 8.0
25.4+0
-0.3
25.2 (Ceramic scintillator)
P1.575 × 15 = 23.625
1.575
P 2.54 × 8 = 20.32
C-2.0
(Index mark)
2.54
2.0
15.24 ± 0.1
3.1
(Ceramic scintillator)
20.0 ± 0.2
123456789
10 11 12 13 14 15 16
(18 ×) 0.45
Fe Ni Co pin
Scintillator array
1.3t: Ceramic scintillator
Black resin coated
Glass epoxy board
Active area
1.175 × 2.0
KC
KC
2.9
1.3
0.6 ± 0.15
3.5 ± 0.5
1.0 ± 0.15
6.0
6.0 8.0
25.4+0
-0.3
P1.575 × 15 = 23.625
25.1 (Phosphor sheet)
1.575
P 2.54 × 8 = 20.32
C-2.0
(Index mark)
2.54
2.0
15.24 ± 0.1
3.0
(
Phosphor sheet
)
20.0 ± 0.2
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10 11 12 13 14 15 16
(18 ×) 0.45
Fe Ni Co pin
Fluorescent paper
0.3t: Gd2O2S (Tb)
Black resin coated
Glass epoxy board
Active area
1.175 × 2.0
KC
KC
2.07
1.3
HAMAMATSU also provides the C9004 driver circuit for Si photodiode arrays, that allows direct mounting of the S5668 series on
the circuit board.
Cat. No. KSPD1106E06 Nov. 2011 DN
16-element Si photodiode array S5668 series
www.hamamatsu.com
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Product specifications are subject to change without prior notice due to improvements or other reasons. Before assembly into final products, please contact
us for the delivery specification sheet to check the latest information.
Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or
a suffix "(Z)" which means developmental specifications.
The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that
one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product
use.
Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission.
Information described in this material is current as of November, 2011.
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