16-element Si photodiode array S5668 series Long and narrow format by multiple arrays S5668-021 The S5668 series is a 16-element Si photodiode linear array. Each element has an active area of 1.175 mm (width) x 2.0 mm (height) and is arrayed at an element pitch of 1.575 mm. The entire linear array is mounted on a 25.4 mm (1 inch) long PC board. By linearly arranging two or more pieces of the S5668 series, a long and narrow photodiode array can be easily configured at the same element pitch. For X-ray detection applications, the S5668-121 with a CsI (Tl) scintillator, the S5668-321 with a ceramic scintillator and the S5668-421 with a fluorescent paper are also available. Features Applications Active area: 1.175 x 2.0 mm/one element Non-destructive inspection, etc. Element pitch: 1.575 mm Mounted on a 1-inch (25.4 mm) long PC board Long and narrow format by multiple arrays Selection guide Type No. S5668-021 Scintillator None (epoxy resin potting) Scintillator specifications Afterglow Cross-talk - S5668-121 CsI (Tl) Large S5668-321 Ceramic Small S5668-421 Phosphor sheet Small - Application example General photometry X-ray non-destructive inspection of slow-moving objects Low (baggage inspection, etc.) X-ray applications where signal can be integrated X-ray non-destructive inspection Low of fast-moving objects (baggage inspection, etc.) X-ray non-destructive inspection May occur. (at low X-ray intensity) S5668-421 S5668-321 S5668-121 S5668-021 Handling precautions CsI scintillator of the S5668-121 has deliquescence. Avoid storing or using the S5668-121 at high humidity. www.hamamatsu.com 1 16-element Si photodiode array S5668 series Absolute maximum ratings Parameter Reverse voltage Operating temperature Storage temperature Symbol VR Max. Topr Tstg S5668-021 10 -20 to +60 -20 to +80 S5668-121/-321/-421 10 -10 to +60 -20 to +70 Unit V C C Electrical and optical characterisitcs (Ta=25 C, per 1 element) Parameter Spectral response range Peak sensitivity wavelength Symbol p Photo sensitivity S Dark current ID Rise time tr Terminal capacitance Noise equivalent power Ct NEP X-ray sensitivity iscX Condition =540 nm =p VR=10 mV VR=0 V, RL=1 k 10 to 90 % VR=0 V, f=10 kHz VR=0 V, =540 nm -021 -121 * -321 -421 Min. 0.27 0.54 - Typ. 340 to 1100 960 0.31 0.60 5 Max. 0.35 0.66 30 Unit nm nm - 0.1 - s 20 - 30 9.3 x 10-15 6.8 3.4 3.2 40 - pF W/Hz1/2 A/W pA nA * These are for reference (X-ray tube voltage 120 kV, tube current 1.0 mA, aluminum filter t=6 mm, distance 830 mm), X-ray sensitivity depends on the X-ray equipment operating and setup conditions. Spectral response i Photo sensitivity (A/W) i QE=100 % i i i i i i i ii ii ii ii ii ii ii iii ii Wavelength (nm) KMPDB0277EB 2 16-element Si photodiode array S5668 series Emission spectrum of scintillator and spectral response S5668-121 S5668-321 (Typ.) (Typ.) 100 100 100 Spectral response 80 Emission spectrum of CsI (TI) scintillator 60 60 40 40 20 20 0 0 200 400 600 800 1000 0 1200 Relative emission intensity (%) 80 Quantum efficiency (%) Relative emission intensity (%) Spectral response 80 80 Emission spectrum of ceramic scintillator 60 60 40 40 20 20 0 0 Wavelength (nm) 200 400 600 800 Quantum efficiency (%) 100 1000 0 1200 Wavelength (nm) KMPDB0282EB KMPDB0281EB Typical scintillator characteristics Parameter Peak emission wavelength X-ray absorption coefficient Refractive index Decay constant Afterglow Density Color Sensitivity non-uniformity Condition 100 keV at peak emission wavelength 100 ms after X-ray turn off CsI (TI) 560 10 1.74 1 0.3 4.51 Transparent 10 Ceramic scintillator 512 7 2.2 3 0.01 7.34 Light yellow-green 5 Unit nm cm-1 s % g/cm3 % 3 16-element Si photodiode array S5668 series Dimensional outlines (unit: mm, tolerance: 1 mm unless otherwise noted) S5668-021 0.6 0.15 1.0 0.15 P1.575 x 15 = 23.625 1.3 1.575 6.0 KC 4.2 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 Epoxy resin 8.0 Active area 1.175 x 2.0 2.0 Glass epoxy board 6.0 15.24 0.1 20.0 0.2 C-2.0 (Index mark) (18 x) 0.45 Fe Ni Co pin 25.4 +0 -0.3 KC 3.5 0.5 2.54 P 2.54 x 8 = 20.32 KMPDA0229EB S5668-121 25.4 +0 -0.3 5.32 P1.575 x 15 = 23.625 C-2.0 (Index mark) 1.3 1.575 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 6.0 8.0 Active area 1.175 x 2.0 2.0 Black resin coated Scintillator array 3.0t: CsI (Tl) Glass epoxy board 6.0 3.1 (CsI scintillator) 15.24 0.1 20.0 0.2 KC 1.0 0.15 (18 x) 0.45 Fe Ni Co pin 0.6 0.15 25.2 (CsI scintillator) KC 3.5 0.5 2.54 P 2.54 x 8 = 20.32 KMPDA0230EB 4 16-element Si photodiode array S5668 series S5668-321 25.4 +0 -0.3 2.9 P1.575 x 15 = 23.625 C-2.0 (Index mark) 1.3 1.575 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 6.0 Black resin coated Scintillator array 1.3t: Ceramic scintillator 8.0 Active area 1.175 x 2.0 2.0 Glass epoxy board 6.0 3.1 (Ceramic scintillator) 15.24 0.1 20.0 0.2 KC 1.0 0.15 (18 x) 0.45 Fe Ni Co pin 0.6 0.15 25.2 (Ceramic scintillator) KC 3.5 0.5 2.54 P 2.54 x 8 = 20.32 KMPDA0231EA S5668-421 25.4 +0 -0.3 0.6 0.15 P1.575 x 15 = 23.625 2.07 1.3 1.575 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 6.0 8.0 Active area 1.175 x 2.0 2.0 Black resin coated Fluorescent paper 0.3t: Gd2O2S (Tb) Glass epoxy board 6.0 15.24 0.1 3.0 (Phosphor sheet) 20.0 0.2 KC 1.0 0.15 (18 x) 0.45 Fe Ni Co pin C-2.0 (Index mark) 25.1 (Phosphor sheet) KC 3.5 0.5 2.54 P 2.54 x 8 = 20.32 KMPDA0232EA HAMAMATSU also provides the C9004 driver circuit for Si photodiode arrays, that allows direct mounting of the S5668 series on the circuit board. 5 16-element Si photodiode array S5668 series Information described in this material is current as of November, 2011. Product specifications are subject to change without prior notice due to improvements or other reasons. Before assembly into final products, please contact us for the delivery specification sheet to check the latest information. Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or a suffix "(Z)" which means developmental specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvagen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Cat. No. KSPD1106E06 Nov. 2011 DN 6