-CY7C271 T Ub-VS -2% CY7C274 CYPRESS SEMICONDUCTOR 32,768 x 8 PROM Power Switched and Reprogrammable Features e Capable of withstanding >2001V stat- ic discharge e CMOS for optimum speed/power : . e Windowed for reprogrammabillty Functional Description The CY7C271 and CY7C274 are high- soe ae (commercial performance 32,768-word by 8-bit CMOS os PROMs. When disabled (CE HIGH), the 35 ns (military) 7C271/1C274 automatically powers down @ Low power into a low-power stand-by mode. The 660 mW (commerclal CY7C271 is packaged in the 300-mil slim 715 mW (ulitery ) package, The CY7C274 is packaged in the industry standard 600-mil package, @ Super low standby power Both the 7C271 and 7C274 are available Less than 165 mW when in a cerDIP package equipped with an deselected erasure window to provide for reprogram- e@ EPROM technology 100% mability, When exposed to UV light, the programmable PROM is erased and can be repro- Slim 300-mil package (7271) mmed, The memory cells utilize prov- en EPROM floating gate technology and The CY7C271 and CY7C274 offer the ad- vantage of lower power, superior perform- ance, and programming yield. The EPROM cell requires only 12.5V for the super voltage, and low current require- ments allow for gang programming, The EPROMcellsallow each memorylocation tobe tested 100% because each location is written into, erased, and repeatedly exer- cised prior to encapsulation. Each PROM is also tested for AC performance to guar- antee that after customer programming, the product will meet DC and AC specifi- cation limits, Reading the 7C271 is accomplished by placing active LOW signals on CS, and , and an active HIGH on CS, Reading the 7C274 is accomplished by placing ac- e Direct replacement for bipolar wide intef{? * tive LOW signals on OE and CE. The con- PROMs byte-wide intelligent programming algo- tents of the memory location addressed by . the address lines (Ap Aza) will become available on the output lines (Op -- O7). Logic Block Diagram Pin Configurations DIP/Flatpack 0; na 281 Veo welt oh Veo 1a 2770 Ato Aw T]2 27 As Ana Os 260) Ass a3 26H Ats Ai 251] Ai At 2st Ae At zap) Ats as 24D) Ap hs Os 230 Ais Ag 8 7274 ont ayy 22) 0S, 4s C7 227] UE Ae 210) cs, Ate 2170 Ato Ar cE Ato 20[] CE M a 191) 0, Aof10 1919 o, As 18D) O Oy C14 18[] Og Os or Cy i2 1710 Of, Ms 03 160] 04 0, 413 160] O4 As Qs Gnd C] 14 15[] Oy he C271-2 ca7i- PFSPISP IT te (70271) 03, (70271) GS, (70274) DE 13 141516171819 20 cari-4 = SSBESSS cong SO BLESS cons o LCC/PLCC (Opaque Only) = LCC/PLCC (Opaque Only) ge2e3zi 2ffe 822 SFFPISLRE 13 ai 14151647 161920 Selection Guide 7271-30 7C271-35 71C027430 7C27435 Current ( 3-106 71C027145 7C271-55 7C27445 10274-55= - - : - eee CYPRESS SEMICONDUCTOR ULE D Kal 258%bb2 000832 & ESCYP ies CY7C271 SSF ES oncroe AE T-29 CYC TA Maximum Ratings (Abovewhich the useful life may be impaired, Foruserguidelines, Latch-UpCurrent .........ccccseeecereseeseee >200mA not tested.) UVEXPOSUE .....seceeeesee es sesecseeees 7258 Wsec/em? Storage Temperature ......c.ecceeeeee ~65Cto +150C . Ambient Temperaturewith Operating Range PowerApplied .......ccccscseseessees 55Cto +125C Ambient Supply Voltage to Ground Potential........ ~0.5Vto +7.0V Range Temperature Vec DC Voltage Applied to Outputs Commercial 0Cto +70C 5V 10% in High Z State eeedesccevcccceceseseess O5SV tO +7,0V Industriaf4 40C to +85C 5V +10% DC Input Voltage .......ccescecceseeees ~3.0V to +7.0V Military) = 55Cto 105C 5V =10% DC Program Voltage .......ccsecsecseesecssesseees 13,0V Static Discharge Voltage .... ceteeaee seveee > 2001V 21 veneee (per MIL-STD-883, Method 3015) Electrical Characteristics Overthe Operating Rangel) PROMs "I 7C271-30, 35, 45, 55 . 1027430, 35, 45, 55 Parameters Description Test Conditions Min. Max. Units Vou Output HIGH Voltage Vcc = Min, log = 2.0mA 2.4 Vv VoL Output LOW Voltage Vcc = Min., Jor = 8.0 mAl4) 0.4 Vv Vin Input HIGH Level Guaranteed Input Logical HIGH Voltage for 2.0 Vcc Vv AllInputs Vu, Input LOW Level GuaranteedInput Logical LOW Voltage for All 0.8 Vv Inputs Ix Input Current GND < Vin < Vcc -10 +10 pA loz Output Leakage Current VoL Vout < Vou, Output Disabled -40 +40 pA Tos Output Short Circuit Currentl5]_ | Vcc = Max., Vour = GND 20 90 mA Tec Power Supply Current Vec = Max., Vin = 2.0V, Commercial 120 mA Tour = OmA Military 130 Isp Standby Supply Current Voc = Max., CS > Viz, Commercial 30 mA Tour = OmA Military 40 Vpp Programming Supply Voltage 12 13 Vv Ipp Programming Supply Current 50 mA Vip Input HIGH Programming 3.0 Vv Voltage Vite Input LOW Programming 0.4 Vv Voltage Capacitancel6] Parameters Description Test Conditions Max. Units Gn InputCapacitance Ta = 25C, f= 1 MHz, 10 pF Cout OutputCapacitance Vcc = 5.0V 10 pF Notes; 1. Contact a Cypress representative for information on industrial tem- 4, 6.0 mA military perature range specifications, 5. For test purposes, not more than one output at a time should be 2. Tais the instant on case temperature. shorted, Short circuit test duration should not exceed 30 seconds. 3. See the last page of this specification for Group A subgroup testingin- 6. See Introduction to CMOS PROMs in this Data Book for general in- formation. formation on testing, 3-107CYPRESS SEMICONDUCTOR aint en mn + = SS _ = S = RESS 2 SEMICONDUCTOR CYPI - - xe 46bE D EM 258%bbe 0006833 T EacyP CY7C271 CY7C274 AC Test Loads and Waveforms|4 5V R15002 R1 5002 668Q MIL eV 658Q MIL Oe wee OUTPUT a R23332 R2333Q 30 pF 5 pF P [ (4032 MIL) P 1 (4039 MIL} INCLUDING Lk INCLUDING? JIG@AND = => JIGAND = == SCOPE SCOPE cari-e (a) (b) High Z Load Equivalentto: THEVENIN EQUIVALENT OUTPUT ow-_-0 2.00V COMMERCIAL 2002 Switching Characteristics Over the Operating Rangel. 4 T-46-13-29 ALL INPUT PULSES 3.0V GND <5ns (c) Input Pulses 2502 OUTPUT o+~w_-9 1.90V MILITARY ce7t-8 70271~30 | 7271-35 | 7271-45 | 70271-55 7C27430 | 7C274-35 | 7027445 | 7C0274~S55 Parameters Description Min. | Max. | Min. | Max. | Min. | Max. | Min. | Max. | Units taa Address to Output Valid 30 35 45 55 ns tuzcs Chip select Inactive to High Z (CS; and CS2, 7C271 20 30 30 ns nly tacs Chip Select Active to Output Valid (CS; and CS), 20 25 30 30 ns 7C271 Only) tuz0E Output Enable Inactive to High Z (OE, 7C274 Only) 20 25 25 30 | as tog out Enable Active to Output Valid (OE, 7C274 20 25 25 30 | os Only tHzcE Chip Enable Inactive to High Z (CE Only) 35 40 50 60 | ns tacE Chip Enable Active to Output Valid (CE Only) 35 40 50 60 | ns tpu Chip Enable Active to Power Up 0 0 0 0 ns tpp Chip Enable Inactive to Power Down 35 40 50 60 ns tou Output Hold from AddressChange 0 0 0 0 ns Switching Waveform , 1__teo Pu, POWER-DOWN CONTROLLED BY CE cc SUPPLY , 150% GURRENT Seo [7 50% -A anbred x Cs, OE, CE, CS,(4 x x tA (tuzoe) (toe) ton, He tuzcs(e) >} H tacsie) Oo - 97 PREVIOUS DATA VALID Kx DATA VALID HIGH? ca7i-9 Note: J. CSgandCS, are used onthe 7C271 only. GE is used on the 7C274 only. 3-108CYPRESS SEMICONDUCTOR CY7C271 T-46-13-29 CY7C274 7 Erasure Characteristics Wavelengths of light less than 4000 angstroms begin to erase the 7C271 and 7C274 in the windowed package, For this reason, an opaque label should be placed over the window if the PROM is exposed to sunlight or fluorescent lighting for extended periods of time. The recommended dose of ultraviolet light for erasure is a wave- length of 2537 angstroms for a minimum dose (UV intensity x ex- posure time) or 25 Wsec/cm?, For an ultraviolet lamp with a 12 mW/cm2 power rating, the exposure time would be approximately 45 minutes, The 70271 or 7C274 needs to be within 1 inch of the lamp during erasure. Permanent damage may result if the PROM is exposed to high-intensity UV light for an extended period of time. 7258 Wsec/cm? is the recommended maximum dosage. Programming Modes Programming support is available from Cypress as well as froma number of third-party software vendors. For detailed program- ming information, including a listing of software packages, please see the PROM Programming Information located at the end of this section. Programming algorithms can be obtained from any Cypress representative. Table 1. CY7C271 Mode Selection Pin Function ) Read or Output Disable | Aig Ag Ch CS; CS, 07-09 Mode | Other Au Ag VEY PGM Ver D7 Dy Read Ata ~ Ag Vit Vin Vit O7-0o Power Down Aig Ag Vin x x High Z Output Disable Aig Ag Xx Vit x High Z Output Disable Aug Ag x x Vin High Z Program Aug Ag Vier ViLp Vpp D7 ~ Do Program Verify Ais Ao Vite Vinp/ Vite Ver 07- Oo Program Inhibit Aig Ag View Vine Vpp High Z Blank Check A1q Ao Vitp Vine/Vitp Vep O7 ~ Oo Table 2. CY7C274 Mode Selection Pin Function) Read or Output Disable | Aja Ag OE CE Ver 07-04 Mode Other Atg Ag VFY PGM Vee BD, - Do Read Ata Ag Vit Vin xX 07 - Oo Output Disable Ata Ag Vin x x High Z Power Down Ayg ~ Ag Vin x High Z Program Ara Ao Vine Vip Vep D7 -Do Program Verify Aig Ao Vite Vinp/Vitp Ver O07 - Og Program Inhibit A14 Ag Vine View Vpp High Z Blank Check Ara Ag Vite Vinp/Vitp Vep 07 Oo Note: 8 X= don't care but not to exceed Veco 5%. 3-109 WBE D EM 258%bb2 0006834 1 EacyP fou PROMs |CYPRESS SEMICONDUCTOR T-46-13-29 4BE D MM 2589662 0006835 3 macyP CY7C274 = 130 29 27 2. 28 26 25' 4 23 2 1 13 2 14181617 181920 SEsPPTIPF2 . 271-11 Pee 8 B2reze7ze ge 36 oD a 13 1415 16 17 181920 saggeae cari-13 Figure 1, Programming Pinouts 3-110 CY7C271 | |> nN NORMALIZED log NORMALIZED ACCESS TIME AMBIENT TEMPERATURE (C) 125 OUTPUT SOURCE CURRENT (mA) OUTPUT SINK CURRENT (mA) 0 1.0 2.0 30 40 OUTPUT VOLTAGE (Vv) OUTPUT SINK CURRENT vs. OUTPUT VOLTAGE 175 150 125 100 75 : verse n o a 2 1.0 2.0 30 864.0 OUTPUT VOLTAGE (Vv) 3-111 .a~ 254%bb2 OO0b83b S EMCcyP CYPRESS SEMICONDUCTOR WLE D = CY7C271 CY7C274 SEMICONDUCTOR T--46-13-29 DC and AC Characteristics NORMALIZED SUPPLY CURRENT NORMALIZED SUPPLY CURRENT NORMALIZED ACCESS TIME vs. SUPPLY VOLTAGE * ys. AMBIENT TEMPERATURE ys. SUPPLY VOLTAGE 1.6 1.2 1.2 = A = penne a0 a a SN 8 a 1.0 a 08 = = wy 5 a ec Zz 09 lS a 5 Ta = 25C 08 = 04 6.0 55 25 125 40 45 50 655 60 SUPPLY VOLTAGE (V) AMBIENT TEMPERATURE (C) SUPPLY VOLTAGE (V) NORMALIZED ACCESS TIME OUTPUT SOURCE CURRENT TYPICAL ACCESS TIME CHANGE vs. TEMPERATURE vs. VOLTAGE vs. OUTPUT LOADING DELTA ta, (ns) = Voc = 4.5V Ta = 25C 0.0 - 0 200 400 600 800 1000 CAPACITANCE (pF) Ca7i~14aoe CYPRESS SEMICONDUCTOR 4EE D MM 258%bbe 0006837 7 EACYP CY7C271 T-46-13-29 ee OCD Ordering Information!) Speed Package | Operating Speed Package ] Operating (ns) Ordering Code Type Range (ms) Ordering Code Type Range 30 CY7C271-30DC D16 Commercial 30 CY7C274-30DC D16 Commercial CY7C271-30JC J65 CY7C274-305C 365 CY7C271~30WC W22 CY7C27430PC P15 35 CY7C271-35DC D22 Commercial CY7C274-30WC Wi6 CY7C271-35IC J65 35 CY7C27435DC D16 Commercial CY7C271-35PC P21 CY7C27435IC J65 CY7C271-35WC W22. CY7C274~35PC P15 CY7C271-35DMB D22 Military CY7C27435WC Wi6 CY7C271-35KMB K74 CY7C27435DMB Di6 Military CY7C271-35LMB L55 CY7C27435KMB K74 CY7C271-35QMB Q55 * CY7C274-35LMB L55 CY7C271~35WMB W22 CY7C274-35QMB Q55 45 CY7C271-45DC D22 Commercial CY7C27435TMB 74 CY7C271-453C J65 CY7C274-35WMB WIi6 CY7C27145PC P21 45 CY7C27445DC D22 Commercial CY7C271-45WC W22 CY7C274-45IC J65 CY7C271-4SDMB D22 Military CY7C27445PC Pis CY7C27145KMB K74 CY7C27445WC Wi16 CY7C271-45LMB L155 CY7C27445DMB D1i6 Military CY7C27145QMB Q55 CY7C27445KMB K74 CY7C271-45TMB T74 CY7C274~45LMB E55 CY7C271-45WMB Ww22 CY7C27445QMB Q55 55 CY7C271~55DC D22 Commercial CY7C274~45TMB 174 CY7C271-S5JC J65 CY7C27445WMB Wi6 CY7C271~-55PC P21 55 CY7C274SSDC D16 Commercial CY7C271-S55WC W22 CY7C27455IC J65 CY7C27155DMB D22 Military CY7C274S5PC P15 CY7C271-S5SKMB K74 CY7C274-S5WC wi6 CY7C271-S55LMB L55 CY7C27455DMB D16 Military CY7C271-55QMB Q55 CY7C274S5SKMB K74 CY7C271-S55TMB 174 CY7C27455LMB L55 CY7C271S55WMB W22 CY7C2745SQMB Q55 Note: ; CY7C274-S55TMB T74 * Meteta ponepeme resale cyicarisswos_| Wis ability, 3-112na eam SS. __-/* =" SW. . SS ae CYPRESS SS > SEMICONDUCTOR MILITARY SPECIFICATIONS Group A Subgroup Testing DC Characteristics Parameters Vou Vv Vu. Switching Characteristics YPRESS SEMICONDUCTOR UbE D MM 258%b62 0006838 4 ESCyp CY7C271 CY7C274 Subgroups 1,2,3 1,2,3 1,2,3 1,2,3 1,2,3 1,2,3 1,2,3 3 Parameters Subgroups taa 7,8, 9, 10, 11 tacsiH0l 7,8, 9, 10, 11 togl!t] 7,8, 9, 10, 11 tack 7,8, 9, 10, 11 Notes: __ _ 10. 7274 and 7C271 (CS2, CS3 and CS, only), 11. 7271 only. SMD Cross Reference Nember Suffix Nukes 5962-89817 O1XX | CY7C271-55WMB 5962-89817 OLYX | CY7C271-55TMB 5962-89817 01ZX ~~ | CY7C271~55QMB 5962-89817 02XX =| CY7C271-45WMB 5962~89817 02YX | CY7C271-45TMB 5962-89817 02ZX =| CY7C271-45QMB Document #: 3800068-F 3-113 T~46-13-29 PROMs a