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FSD156MRBN Green-Mode Fairchild Power Switch (FPSTM) Features Description Advanced Soft Burst-Mode Operation for Low Standby Power and Low Audible Noise Random Frequency Fluctuation (RFF) for Low EMI Low Operating Current (0.4mA) in Burst Mode The FSD156MRBN is an integrated Pulse Width Modulation (PWM) controller and SenseFET specifically designed for offline Switch-Mode Power Supplies (SMPS) with minimal external components. The PWM controller includes an integrated fixed-frequency oscillator, Under-Voltage Lockout (UVLO), LeadingEdge Blanking (LEB), optimized gate driver, internal soft-start, temperature-compensated precise current sources for loop compensation, and self-protection circuitry. Compared with a discrete MOSFET and PWM controller solution, the FSD series can reduce total cost, component count, size, and weight; while simultaneously increasing efficiency, productivity, and system reliability. This device provides a basic platform suited for cost-effective design of a flyback converter. Pulse-by-Pulse Current Limit Various Protection Functions: Overload Protection (OLP), Over-Voltage Protection (OVP), Abnormal Over-Current Protection (AOCP), Internal Thermal Shutdown (TSD) with Hysteresis, Output-Short Protection (OSP), and Under-Voltage Lockout (UVLO) with Hysteresis Internal Startup Circuit Internal High-Voltage SenseFET: 650V Built-in Soft-Start: 15ms Auto-Restart Mode Applications Power Supply for LCD Monitor, STB, and DVD Combination Ordering Information Output Power Table(2) Part Number Package FSD156MRBN Operating Current RDS(ON) Junction Limit (Max.) Temperature 8-DIP -40C ~ +125C 1.60A 2.3 230VAC 15%(3) Adapter(4) 26W 85-265VAC Open Open Adapter(4) Frame(5) Frame(5) 40W 20W 30W Replaces Device FSFM300N FSGM300 Notes: 1. Lead-free package per JEDEC J-STD-020B. 2. The junction temperature can limit the maximum output power. 3. 230VAC or 100/115VAC with voltage doubler. 4. Typical continuous power in a non-ventilated enclosed adapter measured at 50C ambient temperature. 5. Maximum practical continuous power in an open-frame design at 50C ambient temperature. (c) 2011 Fairchild Semiconductor Corporation FSD156MRBN * Rev. 1.0.0 www.fairchildsemi.com FSD156MRBN -- Green-Mode Fairchild Power Switch (FPSTM) October 2011 Figure 1. Typical Application Circuit Internal Block Diagram Figure 2. (c) 2011 Fairchild Semiconductor Corporation FSD156MRBN * Rev. 1.0.0 FSD156MRBN -- Green-Mode Fairchild Power Switch (FPSTM) Application Circuit Internal Block Diagram www.fairchildsemi.com 2 FSD156MRBN -- Green-Mode Fairchild Power Switch (FPSTM) Pin Configuration 1. GND 8. Drain 2. VCC 7. Drain FSD156MRBN 3. FB 6. Drain 4. N.C. 5. Drain Figure 3. Pin Configuration (Top View) Pin Definitions Pin # Name 1 GND Ground. This pin is the control ground and the SenseFET source. VCC Power Supply. This pin is the positive supply input, which provides the internal operating current for both startup and steady-state operation. 3 FB Feedback. This pin is internally connected to the inverting input of the PWM comparator. The collector of an opto-coupler is typically tied to this pin. For stable operation, a capacitor should be placed between this pin and GND. If the voltage of this pin reaches 7.0V, the overload protection triggers, which shuts down the FPSTM. 4 NC No Connection 5, 6, 7, 8 Drain 2 Description SenseFET Drain. High-voltage power SenseFET drain connection. (c) 2011 Fairchild Semiconductor Corporation FSD156MRBN * Rev. 1.0.0 www.fairchildsemi.com 3 Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Symbol Parameter Min. Max. Unit VDS Drain Pin Voltage 650 V VCC VCC Pin Voltage 26 V VFB Feedback Pin Voltage 10.0 V IDM Drain Current Pulsed 4 A IDS Continuous Switching Drain Current(6) TC=25C 1.9 A TC=100C 1.27 A 190 mJ 1.5 W 150 C -40 +125 C -55 +150 C EAS PD TJ -0.3 (7) Single Pulsed Avalanche Energy Total Power Dissipation (TC=25C) (8) Maximum Junction Temperature Operating Junction Temperature TSTG Storage Temperature ESD Electrostatic Discharge Capability (9) Human Body Model, JESD22-A114 5 Charged Device Model, JESD22-C101 2 kV Notes: 6. Repetitive peak switching current when the inductive load is assumed: Limited by maximum duty (DMAX=0.73) and junction temperature (see Figure 4). 7. L=45mH, starting TJ=25C. 8. Infinite cooling condition (refer to the SEMI G30-88). 9. Although this parameter guarantees IC operation, it does not guarantee all electrical characteristics. Figure 4. FSD156MRBN -- Green-Mode Fairchild Power Switch (FPSTM) Absolute Maximum Ratings Repetitive Peak Switching Current Thermal Impedance TA=25C unless otherwise specified. Symbol Parameter JA Junction-to-Ambient Thermal Impedance JL Junction-to-Lead Thermal Impedance(11) (10) Value Unit 85 C/W 11 C/W Notes: 10. JEDEC recommended environment, JESD51-2, and test board, JESD51-10, with minimum land pattern. 11. Measured on the SOURCE pin #7, close to the plastic interface. (c) 2011 Fairchild Semiconductor Corporation FSD156MRBN * Rev. 1.0.0 www.fairchildsemi.com 4 TJ = 25C unless otherwise specified. Symbol Parameter Conditions Min. 650 Typ. Max. Unit SenseFET Section BVDSS Drain-Source Breakdown Voltage VCC = 0V, ID = 250A IDSS Zero-Gate-Voltage Drain Current VDS = 650V, TA = 25C Drain-Source On-State Resistance VGS=10V, ID =1A 1.8 RDS(ON) (12) V 250 A 2.2 CISS Input Capacitance VDS = 25V, VGS = 0V, f=1MHz 515 pF COSS Output Capacitance(12) VDS = 25V, VGS = 0V, f=1MHz 75 pF Rise Time VDS = 325V, ID = 4A, RG=25 26 ns tr Fall Time VDS = 325V, ID = 4A, RG=25 25 ns td(on) tf Turn-On Delay VDS = 325V, ID = 4A, RG=25 14 ns td(off) Turn-Off Delay VDS = 325V, ID= 4A, RG=25 32 ns Control Section Switching Frequency(12) VCC = 14V, VFB = 4V Switching Frequency Variation(12) -25C < TJ < 125C DMAX Maximum Duty Ratio VCC = 14V, VFB = 4V DMIN Minimum Duty Ratio VCC = 14V, VFB = 0V Feedback Source Current VFB = 0 fS fS IFB VSTART VSTOP tSS VRECOMM UVLO Threshold Voltage Internal Soft-Start Time 61 61 65 67 73 kHz 5 10 % 67 73 % 0 % 115 A 90 VFB = 0V, VCC Sweep 11 12 13 V After Turn-on, VFB = 0V 7.0 7.5 8.0 V VSTR = 40V, VCC Sweep Recommended VCC Range 15 13 ms 23 V FSD156MRBN -- Green-Mode Fairchild Power Switch (FPSTM) Electrical Characteristics Burst-Mode Section VBURH VBURL Burst-Mode Voltage VCC = 14V, VFB Sweep 0.45 0.50 0.55 V 0.30 0.35 0.40 V Hys 150 mV Protection Section ILIM Peak Drain Current Limit di/dt = 300mA/s 1.45 1.60 1.75 A VSD Shutdown Feedback Voltage VCC = 14V, VFB Sweep 6.45 7.00 7.55 V VCC = 14V, VFB = 4V 1.2 2.0 2.8 A VCC Sweep 23.0 24.5 26.0 V 0.7 1.0 1.3 s 1.8 2.0 2.2 V 2.0 2.5 3.0 s 125 135 145 C IDELAY Shutdown Delay Current (12,14) tLEB Leading-Edge Blanking Time VOVP Over-Voltage Protection tOSP VOSP tOSP_FB TSD THYS Output-Short Protection(12) Threshold Time Threshold VFB VFB Blanking Time Thermal Shutdown Temperature(12) 300 OSP Triggered when tON<tOSP & VFB>VOSP (Lasts Longer than tOSP_FB) Shutdown Temperature Hysteresis 60 ns C Continued on the following page... (c) 2011 Fairchild Semiconductor Corporation FSD156MRBN * Rev. 1.0.0 www.fairchildsemi.com 5 TJ = 25C unless otherwise specified. Symbol Parameter Conditions Min. Typ. Max. Unit Total Device Section IOP Operating Supply Current, (Control Part in Burst Mode) VCC = 14V, VFB = 0V 0.3 0.4 0.5 mA IOPS Operating Switching Current, (Control Part and SenseFET Part) VCC = 14V, VFB = 2V 1.1 1.5 1.9 mA Start Current VCC=11V (Before VCC Reaches VSTART) 85 120 155 A Startup Charging Current VCC = VFB = 0V, VSTR = 40V 0.7 1.0 1.3 mA Minimum VSTR Supply Voltage VCC = VFB = 0V, VSTR Sweep ISTART ICH VSTR 26 V Notes: 12. Although these parameters are guaranteed, they are not 100% tested in production. 13. Average value. 14. tLEB includes gate turn-on time. Comparison of FSGM300N and FSD156MRBN Function FSGM300N FSD156MRBN Operating Current 1.5mA 0.4mA Power Balance Long tCLD Very Short tCLD (c) 2011 Fairchild Semiconductor Corporation FSD156MRBN * Rev. 1.0.0 Advantages of FSD156MRBN Very low standby power The difference of input power between the low and high input voltage is quite small. FSD156MRBN -- Green-Mode Fairchild Power Switch (FPSTM) Electrical Characteristics (Continued) www.fairchildsemi.com 6 1.20 1.20 1.15 1.15 1.10 1.10 1.05 1.05 Normalized Normalized Characteristic graphs are normalized at TA=25C. 1.00 0.95 0.90 0.85 0'C Operating Supply Current (IOP) vs. TA Figure 6. 1.20 1.20 1.15 1.15 1.10 1.10 1.05 1.05 1.00 0.95 0.90 0.85 0'C Operating Switching Current (IOPS) vs. TA 1.00 0.95 0.90 0.80 40'C 20'C 25'C 50'C 75'C 90'C 110'C 120'C 125'C Temperature [ C] 0'C 25'C 50'C 75'C 90'C 110'C 120'C 125'C Temperature [ C] Startup Charging Current (ICH) vs. TA Figure 8. 1.20 1.30 1.15 1.20 1.10 1.10 1.05 Normalized 1.40 1.00 0.90 0.80 0.70 Peak Drain Current Limit (ILIM) vs. TA 1.00 0.95 0.90 0.85 0.60 40'C 20'C 0'C 0.80 40'C 20'C 25'C 50'C 75'C 90'C 110'C 120'C 125'C Temperature [ C] Figure 9. 25'C 50'C 75'C 90'C 110'C 120'C 125'C 0.85 0.80 40'C 20'C Figure 7. 0'C Temperature [ C] Normalized Normalized 0.90 0.80 40'C 20'C 25'C 50'C 75'C 90'C 110'C 120'C 125'C Temperature [ C] Normalized 0.95 0.85 0.80 40'C 20'C Figure 5. 1.00 FSD156MRBN -- Green-Mode Fairchild Power Switch (FPSTM) Typical Performance Characteristics 25'C 50'C 75'C 90'C 110'C 120'C 125'C Temperature [ C] Feedback Source Current (IFB) vs. TA (c) 2011 Fairchild Semiconductor Corporation FSD156MRBN * Rev. 1.0.0 0'C Figure 10. Shutdown Delay Current (IDELAY) vs. TA www.fairchildsemi.com 7 1.20 1.20 1.15 1.15 1.10 1.10 1.05 1.05 Normalized Normalized Characteristic graphs are normalized at TA=25C. 1.00 0.95 0.90 0.85 0.80 40'C 20'C 0.95 0.90 0.85 0'C 0.80 40'C 20'C 25'C 50'C 75'C 90'C 110'C 120'C 125'C Temperature [ C] 1.15 1.10 1.10 1.05 1.05 Normalized 1.20 1.15 1.00 0.95 0.90 0.85 1.00 0.95 0.90 0.85 0'C 0.80 40'C 20'C 25'C 50'C 75'C 90'C 110'C 120'C 125'C 0'C Temperature [ C] Figure 14. Over-Voltage Protection (VOVP) vs. TA 1.20 1.20 1.15 1.15 1.10 1.10 1.05 1.05 Normalized Normalized 25'C 50'C 75'C 90'C 110'C 120'C 125'C Temperature [ C] Figure 13. Shutdown Feedback Voltage (VSD) vs. TA 1.00 0.95 0.90 0.85 0.80 40'C 20'C 25'C 50'C 75'C 90'C 110'C 120'C 125'C Figure 12. UVLO Threshold Voltage (VSTOP) vs. TA 1.20 0.80 40'C 20'C 0'C Temperature [ C] Figure 11. UVLO Threshold Voltage (VSTART) vs. TA Normalized 1.00 FSD156MRBN -- Green-Mode Fairchild Power Switch (FPSTM) Typical Performance Characteristics 1.00 0.95 0.90 0.85 0'C 0.80 40'C 20'C 25'C 50'C 75'C 90'C 110'C 120'C 125'C Temperature [ C] 25'C 50'C 75'C 90'C 110'C 120'C 125'C Temperature [ C] Figure 15. Switching Frequency (fS) vs. TA (c) 2011 Fairchild Semiconductor Corporation FSD156MRBN * Rev. 1.0.0 0'C Figure 16. Maximum Duty Ratio (DMAX) vs. TA www.fairchildsemi.com 8 3. Feedback Control: This device employs CurrentMode control, as shown in Figure 18. An opto-coupler (such as the FOD817) and shunt regulator (such as the KA431) are typically used to implement the feedback network. Comparing the feedback voltage with the voltage across the RSENSE resistor makes it possible to control the switching duty cycle. When the reference pin voltage of the shunt regulator exceeds the internal reference voltage of 2.5V, the opto-coupler LED current increases, pulling down the feedback voltage and reducing drain current. This typically occurs when the input voltage is increased or the output load is decreased. 1. Startup: At startup, an internal high-voltage current source supplies the internal bias and charges the external capacitor (CVcc) connected to the VCC pin, as illustrated in Figure 17. When VCC reaches 12V, the FSD156MRBN begins switching and the internal highvoltage current source is disabled. Normal switching operation continues and the power is supplied from the auxiliary transformer winding unless VCC goes below the stop voltage of 7.5V. 3.1 Pulse-by-Pulse Current Limit: Because CurrentMode control is employed, the peak current through the SenseFET is limited by the inverting input of PWM comparator (VFB*), as shown in Figure 18. Assuming that the 90A current source flows only through the internal resistor (3R + R =25k), the cathode voltage of diode D2 is about 2.8V. Since D1 is blocked when the feedback voltage (VFB) exceeds 2.8V, the maximum voltage of the cathode of D2 is clamped at this voltage. Therefore, the peak value of the current through the SenseFET is limited. 3.2 Leading-Edge Blanking (LEB): At the instant the internal SenseFET is turned on, a high-current spike usually occurs through the SenseFET, caused by primary-side capacitance and secondary-side rectifier reverse recovery. Excessive voltage across the RSENSE resistor leads to incorrect feedback operation in the Current-Mode PWM control. To counter this effect, the leading-edge blanking (LEB) circuit inhibits the PWM comparator for tLEB (300ns) after the SenseFET is turned on. Figure 17. Startup Block 2. Soft-Start: The internal soft-start circuit increases PWM comparator inverting input voltage, together with the SenseFET current, slowly after startup. The typical soft-start time is 15ms. The pulse width to the power switching device is progressively increased to establish the correct working conditions for the transformers, inductors, and capacitors. The voltage on the output capacitors is progressively increased to smoothly establish the required output voltage. This helps prevent transformer saturation and reduces stress on the secondary diode during startup. FSD156MRBN -- Green-Mode Fairchild Power Switch (FPSTM) Functional Description Figure 18. Pulse Width Modulation Circuit (c) 2011 Fairchild Semiconductor Corporation FSD156MRBN * Rev. 1.0.0 www.fairchildsemi.com 9 B increasing until it reaches 7.0V, when the switching operation is terminated, as shown in Figure 20. The delay for shutdown is the time required to charge CFB from 2.5V to 7.0V with 2.0A. A 25 ~ 50ms delay is typical for most applications. This protection is implemented in Auto-Restart Mode. B Figure 20. Overload Protection 4.2 Abnormal Over-Current Protection (AOCP): When the secondary rectifier diodes or the transformer pins are shorted, a steep current with extremely high di/dt can flow through the SenseFET during the minimum turn-on time. Even though the FSD156MRBN has overload protection, it is not enough to protect the FSD156MRBN in that abnormal case; due to the severe current stress imposed on the SenseFET until OLP is triggered. The internal AOCP circuit is shown in Figure 21. When the gate turn-on signal is applied to the power SenseFET, the AOCP block is enabled and monitors the current through the sensing resistor. The voltage across the resistor is compared with a preset AOCP level. If the sensing resistor voltage is greater than the AOCP level, the set signal is applied to the S-R latch, resulting in the shutdown of the SMPS. Figure 19. Auto-Restart Protection Waveforms 4.1 Overload Protection (OLP): Overload is defined as the load current exceeding its normal level due to an unexpected abnormal event. In this situation, the protection circuit should trigger to protect the SMPS. However, even when the SMPS is in normal operation, the overload protection circuit can be triggered during the load transition. To avoid this undesired operation, the overload protection circuit is designed to trigger only after a specified time to determine whether it is a transient situation or a true overload situation. Because of the pulse-by-pulse current limit capability, the maximum peak current through the SenseFET is limited and, therefore, the maximum input power is restricted with a given input voltage. If the output consumes more than this maximum power, the output voltage (VOUT) decreases below the set voltage. This reduces the current through the opto-coupler LED, which also reduces the opto-coupler transistor current, increasing the feedback voltage (VFB). If VFB exceeds 2.5V, D1 is blocked and the 2.0A current source starts to charge CFB slowly up. In this condition, VFB continues (c) 2011 Fairchild Semiconductor Corporation FSD156MRBN * Rev. 1.0.0 FSD156MRBN -- Green-Mode Fairchild Power Switch (FPSTM) 4. Protection Circuits: The FSD156MRBN has several self-protective functions, such as Overload Protection (OLP), Abnormal Over-Current Protection (AOCP), Output-Short Protection (OSP), Over-Voltage Protection (OVP), and Thermal Shutdown (TSD). All the protections are implemented as auto-restart. Once the fault condition is detected, switching is terminated and the SenseFET remains off. This causes VCC to fall. When VCC falls to the Under-Voltage Lockout (UVLO) stop voltage of 7.5V, the protection is reset and the startup circuit charges the VCC capacitor. When VCC reaches the start voltage of 12.0V, the FSD156MRBN resumes normal operation. If the fault condition is not removed, the SenseFET remains off and VCC drops to stop voltage again. In this manner, the auto-restart can alternately enable and disable the switching of the power SenseFET until the fault condition is eliminated. Because these protection circuits are fully integrated into the IC without external components, reliability is improved without increasing cost. Figure 21. Abnormal Over-Current Protection www.fairchildsemi.com 10 Figure 22. Output-Short Protection 4.4 Over-Voltage Protection (OVP): If the secondary-side feedback circuit malfunctions or a solder defect causes an opening in the feedback path, the current through the opto-coupler transistor becomes almost zero. Then VFB climbs up in a similar manner to the overload situation, forcing the preset maximum current to be supplied to the SMPS until the overload protection is triggered. Because more energy than required is provided to the output, the output voltage may exceed the rated voltage before the overload protection is triggered, resulting in the breakdown of the devices in the secondary side. To prevent this situation, an OVP circuit is employed. In general, the VCC is proportional to the output voltage and the FSD156MRBN uses VCC instead of directly monitoring the output voltage. If VCC exceeds 24.5V, an OVP circuit is triggered, resulting in the termination of the switching operation. To avoid undesired activation of OVP during normal operation, VCC should be designed to be below 24.5V. FSD156MRBN -- Green-Mode Fairchild Power Switch (FPSTM) 5. Soft Burst-Mode Operation: To minimize power dissipation in Standby Mode, the FSD156MRBN enters Burst-Mode operation. As the load decreases, the feedback voltage decreases. As shown in Figure 23, the device automatically enters Burst Mode when the feedback voltage drops below VBURL (350mV). At this point, switching stops and the output voltages start to drop at a rate dependent on standby current load. This causes the feedback voltage to rise. Once it passes VBURH (500mV), switching resumes. The feedback voltage then falls and the process repeats. Burst Mode alternately enables and disables SenseFET switching, reducing switching loss in Standby Mode. 4.3. Output-Short Protection (OSP): If the output is shorted, steep current with extremely high di/dt can flow through the SenseFET during the minimum turnon time. Such a steep current brings high-voltage stress on the drain of the SenseFET when turned off. To protect the device from this abnormal condition, OSP is included. It is comprised of detecting VFB and SenseFET turn-on time. When the VFB is higher than 2.0V and the SenseFET turn-on time is lower than 1.0s, this condition is recognized as an abnormal error and PWM switching shuts down until VCC reaches VSTART again. An abnormal condition output short is shown in Figure 22. Figure 23. Figure 23. Burst-Mode Operation 6. Random Frequency Fluctuation (RFF): Fluctuating switching frequency of an SMPS can reduce EMI by spreading the energy over a wide frequency range. The amount of EMI reduction is directly related to the switching frequency variation, which is limited internally. The switching frequency is determined randomly by external feedback voltage and internal free-running oscillator at every switching instant. RFF effectively scatters EMI noise around typical switching frequency (67kHz) and can reduce the cost of the input filter included to meet the EMI requirements (e.g. EN55022). 4.5 Thermal Shutdown (TSD): The SenseFET and the control IC on a die in one package makes it easier for the control IC to detect the over temperature of the SenseFET. If the temperature exceeds ~135C, the thermal shutdown is triggered and stops operation. The FSD156MRBN operates in Auto-Restart Mode until the temperature decreases to around 75C, when normal operation resumes. Figure 24. Random Frequency Fluctuation (c) 2011 Fairchild Semiconductor Corporation FSD156MRBN * Rev. 1.0.0 www.fairchildsemi.com 11 Application Input Voltage Rated Output Rated Power LCD Monitor Power Supply 85 ~ 265VAC 5.0V(2A) 14.0V(1.3A) 28.2W Key Design Notes 1. The delay for overload protection is designed to be about 30ms with C105 (8.2nF). OLP time between 39ms (12nF) and 46ms (15nF) is recommended. 2. The SMD-type capacitor (C106) must be placed as close as possible to the VCC pin to avoid malfunction by abrupt pulsating noises and to improve ESD and surge immunity. Capacitance between 100nF and 220nF is recommended. Schematic FSD156MRBN -- Green-Mode Fairchild Power Switch (FPSTM) Typical Application Circuit Figure 25. Schematic (c) 2011 Fairchild Semiconductor Corporation FSD156MRBN * Rev. 1.0.0 www.fairchildsemi.com 12 Figure 26. Schematic of Transformer Winding Specification Pin(S F) Wire Turns Winding Method 32 0.25x1 22 Np /2 Barrier Tape TOP BOT Ts Solenoid Winding - 2.0mm 1 3 Solenoid Winding - 3.0mm 1 8 Solenoid Winding 4.0mm 3.0mm 1 3 Solenoid Winding - 3.0mm 1 5 Solenoid Winding 2.0mm 1 22 Solenoid Winding 2.0mm 1 Insulation: Polyester Tape t = 0.025mm, 2 Layers N5V 76 0.4x2 (TIW) Insulation: Polyester Tape t = 0.025mm, 2 Layers Na 45 0.2x1 FSD156MRBN -- Green-Mode Fairchild Power Switch (FPSTM) Transformer Insulation: Polyester Tape t = 0.025mm, 2 Layers N5V 86 0.4x2 (TIW) Insulation: Polyester Tape t = 0.025mm, 2 Layers N14V 10 8 0.4x2 (TIW) Insulation: Polyester Tape t = 0.025mm, 2 Layers Np/2 21 0.25x1 - Insulation: Polyester Tape t = 0.025mm, 2 Layers Electrical Characteristics Pin Specification Remark Inductance 13 826H 6% 67kHz, 1V Leakage 13 15H Maximum Short all other pins Core & Bobbin Core: EER3016 (Ae=109.7mm2) Bobbin: EER3016 (c) 2011 Fairchild Semiconductor Corporation FSD156MRBN * Rev. 1.0.0 www.fairchildsemi.com 13 Part # Value Note Part # Fuse F101 NTC101 Value Note Capacitor 250V 2A C101 220nF/275V Box (Pilkor) NTC C102 150nF/275V Box (Pilkor) C103 100F/400V Electrolytic (SamYoung) C104 3.3nF/630V Film (Sehwa) 5D-9 DSC Resistor R101 1.5M, J 1W C105 15nF/100V Film (Sehwa) R103 43k, J 1W C106 100nF SMD (2012) R201 1.5k, F 1/4W, 1% C107 47F/50V Electrolytic (SamYoung) R202 1.0k, F 1/4W, 1% C201 820F/25V Electrolytic (SamYoung) R203 18k, F 1/4W, 1% C202 820F/25V Electrolytic (SamYoung) R204 8k, F 1/4W, 1% C203 2200F/10V Electrolytic (SamYoung) R205 8k, F 1/4W, 1% C204 1000F/16V Electrolytic (SamYoung) C205 47nF/100V Film (Sehwa) C301 2.2nF/Y2 Y-cap (Samhwa) IC FPS Inductor FSD156MRBN Fairchild LF101 20mH Line filter 0.5O IC201 KA431LZ IC301 FOD817B Fairchild L201 5H 5A Rating Fairchild L202 5H 5A Rating Diode Transformer D101 1N4007 Vishay D102 UF4007 Vishay ZD101 1N4750 Vishay D201 MBRF10H100 Fairchild D202 MBRF1060 Fairchild BD101 G2SBA60 Vishay (c) 2011 Fairchild Semiconductor Corporation FSD156MRBN * Rev. 1.0.0 T101 826uH FSD156MRBN -- Green-Mode Fairchild Power Switch (FPSTM) Bill of Materials www.fairchildsemi.com 14 FSD156MRBN -- Green-Mode Fairchild Power Switch (FPSTM) Package Dimensions 9.83 9.00 6.67 6.096 8.255 7.61 3.683 3.20 5.08 MAX 7.62 0.33 MIN 3.60 3.00 (0.56) 2.54 0.56 0.355 0.356 0.20 9.957 7.87 1.65 1.27 7.62 NOTES: UNLESS OTHERWISE SPECIFIED A) THIS PACKAGE CONFORMS TO JEDEC MS-001 VARIATION BA B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH, AND TIE BAR EXTRUSIONS. D) DIMENSIONS AND TOLERANCES PER ASME Y14.5M-1994 E) DRAWING FILENAME AND REVSION: MKT-N08FREV2. Figure 27. 8-Lead, MDIP, JEDEC MS-001, .300" Wide Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild's worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor's online packaging area for the most recent package drawings: http://www.fairchildsemi.com/packaging/. (c) 2011 Fairchild Semiconductor Corporation FSD156MRBN * Rev. 1.0.0 www.fairchildsemi.com 15 FSD156MRBN -- Green-Mode Fairchild Power Switch (FPSTM) (c) 2011 Fairchild Semiconductor Corporation FSD156MRBN * Rev. 1.0.0 www.fairchildsemi.com 16 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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