FEATURES
* High breakdown voltage
* Low collector-emitter saturation voltage
* Complementary to MMBTA92 (NPN)
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-O rate flame retardant
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
* Weight: 0.008 gram
SOT-23
MMBTA42
Dimensions in inches and (millimeters)
2007-5
ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted )
MAXIMUM RATINGS ( @ TA = 25oC unless otherwise noted )
Note:
CHARACTERISTICS SYMBOL UNITS
RATINGS
Collector Power Dissipation
Max. Operating Temperature Range
Storage Temperature Range
SYMBOL
PC
TJ
TSTG
VALUE
MAX.TYP.
-
VCollector-base breakdown voltage (IC=100uA,IE=0) V(BR)CBO
-300
-
VCollector-emitter breakdown voltage (IC=1mA,IB=0) V(BR)CEO
-300
MIN.
UNITS
mW350
"Fully ROHS Complant", "100% Sn plating (Pb-free)".
150
-55 to +150
oC
Collector Current-Continuous ICA0.3
oC
0.118(3.00)
0.012(0.30)
0.020(0.50)
0.003(0.08)
0.006(0.15)
0.110(2.80)
0.019(2.00)
0.071(1.80)
0.100(2.55)
0.089(2.25)
0.020(0.50)
0.012(0.30)
0.043(1.10)
0.035(0.90)
0.047(1.20)
0.055(1.40)
0.004(0.10)
0.000(0.00)
SOT-23 BIPOLAR TRANSISTORS
TRANSISTOR(NPN)
1
3
BASE
EMITTER
COLLECTOR
2
1
3
2
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
-
VEmitter-Base breakdown voltage (IE=100uA,IC=0) V(BR)EBO
-5
0.25
uACollector cut-off current (VCB=200V,IE=0) ICBO
--
0.1
uAEmitter cut-off current (VEB=5V,IC=0)
(VCE=10V,IC=1mA)
(VCE=10V,IC=10mA)
(VCE=10V,IC=30mA)
IEBO
--
-
-hFE(1)
-60
200
-DC current gain hFE(2)
-100
-
-hFE(3)
-60
0.2
VCollector-emitter saturation voltage (IC=20mA,IB=2mA) VCE(sat)
--
0.9
VBase-emitter saturation voltage (IC=20mA,IB=2mA) VBE(sat)
--
-
MHzTransition frequency (VCE=20V,IC=10mA,f=30MHz) fT
-50
IC, COLLECTOR CURRENT (mA)
VBE(ON), BASE-EMITTER VOLTAGE (V)
Figure 2 Collector-Emitter Saturation Voltage
vs. Collector Current
Figure 4 Base-Emitter ON Voltage vs.
Collector Current
Figure 3. Base-Emitter Saturation Voltage
vs. Collector Current
80
100
120
140
60
0.4
0.6
0.8
1
0.2
0.1
0.1
20
40
1 10 100
0.3
0.25
0.2
0.15
0.1
0.05
1 10 100 0.1 1 10 100
0.8
1
0.6
0.2
0.4
0.1 1 10 100
Figure 1 DC Current Gain vs. Collector Current
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
hFE, DC CURRENT GAIN
VCESAT, COLLECTOR-EMITTER VOLTAGE (V)
VBESAT, BASE-EMITTER VOLTAGE (V)
RATING AND CHARACTERISTICS CURVES ( MMBTA42 )
125
O
C
V
CE
=5V
25
O
C
-40
O
C
b =10
-40
O
C25
O
C
b =10
125
O
C
125
O
C
-40
O
C
25
O
C
V
CE
=1V
-40
O
C
25
O
C
125
O
C
110 100 1000
Figure 5 Collector-Cut off Current vs.
Ambient Temperature
TA, AMBIENT TEMPERATURE (OC)
10
100
Figure 6 Collector-Base and Emitter-Base Capacitance
vs. Reverse Bias Voltage
REVERSE BIAS VOLTAGE (V)
1
25
100
50
20
10
5
2
1
ICBO, COLLECTOR CURRENT (nA)
CAPACITANCE (pF)
50 75 100 125 150
RATING AND CHARACTERISTICS CURVES ( MMBTA42 )
C
cb
C
eb
V
CB
=150V
Figure 7 Power dissipation vs.
Ambient Temperature
TEMPERATURE (OC)
0.5
1
0.75
0.25
0
0
PD, POWER DISSIPATION (W)
25 50 75 100 125 150
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