Feb.1999
FK10KM-12
¡VDSS ................................................................................600V
¡rDS (ON) (MAX) ..............................................................1.18Ω
¡ID ......................................................................................... 10A
¡Viso ................................................................................ 2000V
¡Integrated Fast Recovery Diode (MAX.) ........150ns
VDSS
VGSS
ID
IDM
IS
ISM
PD
Tch
Tstg
Viso—
600
±30
10
30
10
30
40
–55 ~ +150
–55 ~ +150
2000
2.0
V
V
A
A
A
A
W
°C
°C
Vrms
g
OUTLINE DRAWING Dimensions in mm
TO-220FN
MITSUBISHI Nch POWER MOSFET
FK10KM-12
HIGH-SPEED SWITCHING USE
APPLICATION
Servo motor drive, Robot, UPS, Inverter Fluorecent
lamp, etc.
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Isolation voltage
Weight
VGS = 0V
VDS = 0V
AC for 1minute, Terminal to case
Typical value
MAXIMUM RATINGS (Tc = 25°C)
Parameter ConditionsSymbol Ratings Unit
w
q
e
15 ± 0.314 ± 0.5
10 ± 0.3 2.8 ± 0.2
φ 3.2 ± 0.2
1.1 ± 0.2
1.1 ± 0.2
0.75 ± 0.15
2.54 ± 0.252.54 ± 0.25
2.6 ± 0.2
4.5 ± 0.2
0.75 ± 0.15
3 ± 0.33.6 ± 0.3
6.5 ± 0.3
123
q GATE
w DRAIN
e SOURCE
Feb.1999
V
(BR) DSS
V
(BR) GSS
IGSS
IDSS
VGS (th)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
trr
600
±30
—
—
2
—
—
4.5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
3
0.90
4.50
7.0
1500
170
25
25
35
130
45
1.5
—
—
MITSUBISHI Nch POWER MOSFET
FK10KM-12
HIGH-SPEED SWITCHING USE
ID = 1mA, VGS = 0V
IG = ±100µA, VDS = 0V
VGS = ±25V, VDS = 0V
VDS = 600V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 5A, VGS = 10V
ID = 5A, VGS = 10V
ID = 5A, VDS = 10V
VDS = 25V, VGS = 0V, f = 1MHz
VDD = 200V, ID = 5A, VGS = 10V, RGEN = RGS = 50Ω
IS = 5A, VGS = 0V
Channel to case
IS = 10A, dis/dt = –100A/µs
V
V
µA
mA
V
Ω
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
—
—
±10
1
4
1.18
5.90
—
—
—
—
—
—
—
—
2.0
3.13
150
5
3
2
10
1
7
5
3
2
10
0
7
5
7
5
3
2
10
–1
23 5710
1
10
0
23 5710
2
23 5710
3
T
C
= 25°C
Single Pulse
tw=10µs
100µs
1ms
10ms
DC
50
40
30
20
10
0200150100500
POWER DISSIPATION DERATING CURVE
CASE TEMPERATURE T
C
(°C)
POWER DISSIPATION P
D
(W)
MAXIMUM SAFE OPERATING AREA
DRAIN-SOURCE VOLTAGE V
DS
(V)
DRAIN CURRENT I
D
(A)
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Drain-source breakdown voltage
Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
Symbol UnitParameter Test conditions Limits
Min. Typ. Max.
PERFORMANCE CURVES
Feb.1999
MITSUBISHI Nch POWER MOSFET
FK10KM-12
HIGH-SPEED SWITCHING USE
101
7
5
3
2
10–1
10–1 23 5710
0
100
7
5
3
2
23 5710
1
TC = 25°C
VDS = 10V
Pulse Test
125°C
75°C
40
32
24
16
8
00 4 8 12 16 20
TC = 25°C
VDS=50V
Pulse Test
10
8
6
4
2
00 4 8 12 16 20
TC = 25°C
Pulse Test
5V
4V
VGS = 20V
10V
6V
40
32
24
16
8
00 4 8 12 16 20
ID = 20A
TC = 25°C
Pulse Test
10A
5A
02310–1 5710
023 5710
123 5710
2
2.0
1.6
1.2
0.8
0.4
TC = 25°C
Pulse Test VGS = 10V
20V
20
16
12
8
4
00 1020304050
PD=
40W
TC = 25°C
Pulse Test
4V
5V
VGS = 20V
10V
6V PD=
40W
OUTPUT CHARACTERISTICS
(TYPICAL)
DRAIN CURRENT ID (A)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
DRAIN CURRENT ID (A)
DRAIN-SOURCE VOLTAGE VDS (V)
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
GATE-SOURCE VOLTAGE VGS (V)
DRAIN-SOURCE ON-STATE
VOLTAGE VDS (ON) (V)
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
DRAIN CURRENT ID (A)
DRAIN-SOURCE ON-STATE
RESISTANCE rDS (ON) (Ω)
TRANSFER CHARACTERISTICS
(TYPICAL)
GATE-SOURCE VOLTAGE VGS (V)
DRAIN CURRENT ID (A)
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
DRAIN CURRENT ID (A)
FORWARD TRANSFER
ADMITTANCE yfs (S)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FK10KM-12
HIGH-SPEED SWITCHING USE
5.0
4.0
3.0
2.0
1.0
0–50 0 50 100 150
V
DS
= 10V
I
D
= 1mA
20
16
12
8
4
00 20406080100
V
DS
= 100V
400V
200V
Tch
= 25°C
I
D
= 10A
23 5710
0
10
3
7
5
3
2
10
2
7
5
23 5710
1
10
–1
10
1
3
2
Tch = 25°C
V
DD
= 200V
V
GS
= 10V
R
GEN
= R
GS
= 50Ω
t
f
t
d(off)
t
r
t
d(on)
23 5710
2
10
3
7
5
3
2
10
2
7
5
3
2
10
1
5
3
2
23 5710
1
23 5710
0
23
Ciss
Tch = 25°C
f = 1MHz
V
GS
= 0V
Coss
Crss
10
0
7
5
3
2
10
–1
0
10
1
7
5
3
2
50 100 150 200 250
V
GS
= 10V
I
D
= 1/2I
D
Pulse Test
SWITCHING CHARACTERISTICS
(TYPICAL)
DRAIN-SOURCE VOLTAGE V
DS
(V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
DRAIN CURRENT I
D
(A)
CAPACITANCE
Ciss, Coss, Crss (pF)
SWITCHING TIME (ns)
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
GATE CHARGE Q
g
(nC)
GATE-SOURCE VOLTAGE V
GS
(V)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
SOURCE-DRAIN VOLTAGE V
SD
(V)
SOURCE CURRENT I
S
(A)
CHANNEL TEMPERATURE Tch (°C)
DRAIN-SOURCE ON-STATE RESISTANCE r
DS (ON)
(t°C)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
GATE-SOURCE THRESHOLD
VOLTAGE V
GS (th)
(V)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
DRAIN-SOURCE ON-STATE RESISTANCE r
DS (ON)
(25°C)
CHANNEL TEMPERATURE Tch (°C)
40
32
24
16
8
00 0.8 1.6 2.4 3.2 4.0
T
C
= 125°C
75°C
25°C
V
GS
= 0V
Pulse Test
Feb.1999
MITSUBISHI Nch POWER MOSFET
FK10KM-12
HIGH-SPEED SWITCHING USE
10
3
7
5
3
2
10
0
23 5710
1
10
2
7
5
3
2
23 5710
2
10
1
10
2
7
5
3
2
10
1
7
5
3
2
10
0
d
is/
d
t
= –100A/µs
V
GS
= 0V
V
DD
= 250V
I
rr
t
rr
T
ch
= 25°C
T
ch
= 150°C
1.4
1.2
1.0
0.8
0.6
0.4 –50 0 50 100 150
V
GS
= 0V
I
D
= 1mA
5
3
2
10
1
23 5710
2
10
2
7
5
3
2
23 5710
3
10
1
3
2
10
1
7
5
5
7
5
7
5
3
2
10
0
I
S
= 10A
V
GS
= 0V
V
DD
= 250V
I
rr
t
rr
T
ch
= 25°C
T
ch
= 150°C
10
–4
10
1
7
5
3
2
10
0
7
5
3
2
10
–1
7
5
3
2
23 57 23 57 23 57 23 57
10
0
23 57
10
1
23 57
10
2
10
–3
10
–2
10
–1
10
–2
P
DM
tw
D= T
tw
T
D=1
0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
CHANNEL TEMPERATURE Tch (°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
DRAIN-SOURCE BREAKDOWN VOLTAGE V
(BR) DSS
(t°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V
(BR) DSS
(25°C)
REVERSE RECOVERY TIME t
rr
(ns)
REVERSE RECOVERY CURRENT I
rr
(A)
REVERSE RECOVERY CURRENT I
rr
(A)
SOURCE CURRENT I
S
(A)
DIODE REVERSE VS.
SOURCE CURRENT CHARACTERISTIC
(TYPICAL)
REVERSE RECOVERY TIME t
rr
(ns)
SOURCE CURRENT d
is
/d
t
(–A/µs)
DIODE REVERSE VS.
SOURCE CURRENT d
is
/d
t
CHARACTERISTIC
(TYPICAL) TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
PULSE WIDTH t
w
(s)
TRANSIENT THERMAL IMPEDANCE Z
th
(ch–c)
(°C/W)
