BAS20LT3 - ON Semiconductor

 Semiconductor Components Industries, LLC, 2004

May, 2004 − Rev. 6 1Publication Order Number:

BAS19LT1/D

BAS19LT1, BAS20LT1,

BAS21LT1, BAS21DW5T1

Preferred Devices

High Voltage

Switching Diode

Device Marking:

•BAS19LT1 = JP

•BAS20LT1 = JR

•BAS21LT1 = JS

•BAS21DW5T1 = JS

Features

•Pb−Free Package is Available

MAXIMUM RATINGS

Rating Symbol Value Unit

Continuous Reverse Voltage BAS19

BAS20

BAS21

VR120

200

250

Vdc

Repetitive Peak Reverse Voltage BAS19

BAS20

BAS21

VRRM 120

200

250

Vdc

Continuous Forward Current IF200 mAdc

Peak Forward Surge Current IFM(surge) 625 mAdc

Maximum Junction Temperature TJmax 150 °C

Power Dissipation (Note 4) PD385 mW

1. Mounted on FR−5 Board = 1.0 x 0.75 x 0.062 in.

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

HIGH VOLTAGE

SWITCHING DIODE

Preferred devices are recommended choices for future use

and best overall value.

CATHODE

ANODE

Jx M

MARKING DIAGRAMS

Jx = Specific Device Code

x = P, R or S

M = Date Code

http://onsemi.com

CATHODE

ANODE

CATHODE

ANODE

XXd

XX= Specific Device Code

d= Date Code

SOT−23 (TO−236)

CASE 318

STYLE 8

SC−88A (SOT−353)

CASE 419A

SOT−23

SC−88A

Device Package Shipping†

ORDERING INFORMATION

BAS19LT1 SOT−23 3000 / Tape & Reel

BAS19LT3 SOT−23

BAS21LT1G SOT−23

(Pb−Free)

BAS21LT3 SOT−23

BAS20LT1 SOT−23

BAS21LT1 SOT−23

BAS21DW5T1 SC−88A

10000 / Tape & Reel

3000 / Tape & Reel

10000 / Tape & Reel

3000 / Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1

http://onsemi.com

THERMAL CHARACTERISTICS (SOT−23)

Characteristic Symbol Max Unit

Total Device Dissipation FR−5 Board

(Note 2)

TA = 25°C

Derate above 25°C

PD225

1.8

mW/°C

Thermal Resistance

Junction−to−Ambient (SOT−23) RJA 556 °C/W

Total Device Dissipation Alumina Substrate

(Note 3)

TA = 25°C

Derate above 25°C

PD300

2.4

mW/°C

Thermal Resistance Junction−to−Ambient RJA 417 °C/W

Junction and Storage

Temperature Range TJ, Tstg −55 to +150 °C

THERMAL CHARACTERISTICS (SC−88A)

Characteristic Symbol Max Unit

Power Dissipation (Note 4) PD385 mW

Thermal Resistance −

Junction−to−Ambient

Derate Above 25°C

RJA 328

3.0 °C/W

mW/°C

Maximum Junction Temperature TJmax 150 °C

Operating Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C

2. FR−5 = 1.0  0.75  0.062 in.

3. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.

4. Mounted on FR−5 Board = 1.0 x 0.75 x 0.062 in.

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit

Reverse Voltage Leakage Current

(VR = 100 Vdc) BAS19

(VR = 150 Vdc) BAS20

(VR = 200 Vdc) BAS21

(VR = 100 Vdc, TJ = 150°C) BAS19

(VR = 150 Vdc, TJ = 150°C) BAS20

(VR = 200 Vdc, TJ = 150°C) BAS21

IR−

−

0.1

100

Adc

Reverse Breakdown Voltage

(IBR = 100 Adc) BAS19

(IBR = 100 Adc) BAS20

(IBR = 100 Adc) BAS21

V(BR) 120

200

250

−

Vdc

Forward Voltage

(IF = 100 mAdc)

(IF = 200 mAdc)

VF−

−1.0

1.25

Vdc

Diode Capacitance (VR = 0, f = 1.0 MHz) CD− 5.0 pF

Reverse Recovery Time (IF = IR = 30 mAdc, IR(REC) = 3.0 mAdc, RL = 100) trr − 50 ns

BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1

http://onsemi.com

Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 30 mA.

Notes: 2. Input pulse is adjusted so IR(peak) is equal to 30 mA.

Notes: 3. tp » trr

+10 V 2.0 k

820 

0.1 F

D.U.T.

100 H

0.1 F

50  OUTPUT

PULSE

GENERATOR

50  INPUT

SAMPLING

OSCILLOSCOPE

trtpt

10%

90%

trr t

IR(REC) = 3.0 mA

OUTPUT PULSE

(IF = IR = 30 mA; MEASURED

at IR(REC) = 3.0 mA)

INPUT SIGNAL

Figure 1. Recovery Time Equivalent Test Circuit

Figure 2. Forward Voltage Figure 3. Reverse Leakage

7000

REVERSE VOLTAGE (V)

5000

3000

021

6000

4000

5 10 20 50 100 200

TA = 155°C

TA = 25°C

TA = −55°C

REVERSE CURRENT (nA)

FORWARD CURRENT (mA)

TA = −55°C

1 10 100 1000

200

400

600

800

1000

1200

FORWARD VOLTAGE (mV)

155°C

25°C

BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1

http://onsemi.com

PACKAGE DIMENSIONS

SOT−23 (TO−236)

CASE 318−09

ISSUE AH

DIM

MIN MAX MIN MAX

MILLIMETERS

0.1102 0.1197 2.80 3.04

INCHES

B0.0472 0.0551 1.20 1.40

C0.0385 0.0498 0.99 1.26

D0.0140 0.0200 0.36 0.50

G0.0670 0.0826 1.70 2.10

H0.0040 0.0098 0.10 0.25

J0.0034 0.0070 0.085 0.177

K0.0180 0.0236 0.45 0.60

L0.0350 0.0401 0.89 1.02

S0.0830 0.0984 2.10 2.50

V0.0177 0.0236 0.45 0.60

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. MAXIUMUM LEAD THICKNESS INCLUDES LEAD

FINISH THICKNESS. MINIMUM LEAD THICKNESS

IS THE MINIMUM THICKNESS OF BASE

MATERIAL.

4. 318−01, −02, AND −06 OBSOLETE, NEW

STANDARD 318−09.

KJSTYLE 8:

PIN 1. ANODE

2. NO CONNECTION

3. CATHODE

mm

inches

SCALE 10:1

0.8

0.031

0.9

0.035

0.95

0.037

0.95

0.037

2.0

0.079

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1

http://onsemi.com

PACKAGE DIMENSIONS

NOTES:

1. DIMENSIONING AND TOLERANCING

PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. 419A−01 OBSOLETE. NEW STANDARD

419A−02.

4. DIMENSIONS A AND B DO NOT INCLUDE

MOLD FLASH, PROTRUSIONS, OR GATE

BURRS.

DIM

MIN MAX MIN MAX

MILLIMETERS

1.80 2.200.071 0.087

INCHES

B1.15 1.350.045 0.053

C0.80 1.100.031 0.043

D0.10 0.300.004 0.012

G0.65 BSC0.026 BSC

H−−− 0.10−−−0.004

J0.10 0.250.004 0.010

K0.10 0.300.004 0.012

N0.20 REF0.008 REF

S2.00 2.200.079 0.087

B0.2 (0.008) MM

12 3

D 5 PL

−B−

SC−88A (SOT−353)

CASE 419A−02

ISSUE G

mm

inches

SCALE 20:1

0.65

0.025

0.65

0.025

0.50

0.0197

0.40

0.0157

1.9

0.0748

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1

http://onsemi.com

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty , representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

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USA/Canada

Japan: ON Semiconductor, Japan Customer Focus Center

2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051

Phone: 81−3−5773−3850

BAS19LT1/D

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