BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1 Preferred Devices High Voltage Switching Diode Device Marking: * BAS19LT1 = JP * BAS20LT1 = JR * BAS21LT1 = JS * BAS21DW5T1 = JS http://onsemi.com HIGH VOLTAGE SWITCHING DIODE SOT-23 Features 3 1 CATHODE ANODE SC-88A 5 1 CATHODE ANODE * Pb-Free Package is Available MAXIMUM RATINGS Rating Symbol Continuous Reverse Voltage Value Unit VR 120 200 250 BAS19 BAS20 BAS21 Repetitive Peak Reverse Voltage Vdc 120 200 250 Continuous Forward Current IF 200 mAdc Peak Forward Surge Current IFM(surge) 625 mAdc TJmax 150 C PD 385 mW Power Dissipation (Note 4) 3 ANODE MARKING DIAGRAMS VRRM BAS19 BAS20 BAS21 Maximum Junction Temperature 4 CATHODE Vdc Jx M SOT-23 (TO-236) CASE 318 STYLE 8 Jx = Specific Device Code x = P, R or S M = Date Code XXd 1. Mounted on FR-5 Board = 1.0 x 0.75 x 0.062 in. Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. SC-88A (SOT-353) CASE 419A XX = Specific Device Code d = Date Code ORDERING INFORMATION Package Shipping BAS19LT1 SOT-23 3000 / Tape & Reel BAS19LT3 SOT-23 10000 / Tape & Reel BAS20LT1 SOT-23 3000 / Tape & Reel BAS21LT1 SOT-23 3000 / Tape & Reel SOT-23 (Pb-Free) 3000 / Tape & Reel BAS21LT3 SOT-23 10000 / Tape & Reel BAS21DW5T1 SC-88A 3000 / Tape & Reel Device BAS21LT1G For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2004 May, 2004 - Rev. 6 1 Publication Order Number: BAS19LT1/D BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1 THERMAL CHARACTERISTICS (SOT-23) Characteristic Total Device Dissipation FR-5 Board (Note 2) TA = 25C Derate above 25C Thermal Resistance Junction-to-Ambient (SOT-23) Symbol Max Unit PD 225 mW 1.8 mW/C 556 C/W 300 mW 2.4 mW/C 417 C/W -55 to +150 C Symbol Max Unit PD 385 mW 328 3.0 C/W mW/C TJmax 150 C TJ, Tstg -55 to +150 C RJA Total Device Dissipation Alumina Substrate (Note 3) TA = 25C Derate above 25C PD Thermal Resistance Junction-to-Ambient RJA Junction and Storage Temperature Range TJ, Tstg THERMAL CHARACTERISTICS (SC-88A) Characteristic Power Dissipation (Note 4) Thermal Resistance - Junction-to-Ambient Derate Above 25C RJA Maximum Junction Temperature Operating Junction and Storage Temperature Range 2. FR-5 = 1.0 0.75 0.062 in. 3. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 4. Mounted on FR-5 Board = 1.0 x 0.75 x 0.062 in. ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Characteristic Reverse Voltage Leakage Current (VR = 100 Vdc) (VR = 150 Vdc) (VR = 200 Vdc) (VR = 100 Vdc, TJ = 150C) (VR = 150 Vdc, TJ = 150C) (VR = 200 Vdc, TJ = 150C) BAS19 BAS20 BAS21 BAS19 BAS20 BAS21 Reverse Breakdown Voltage (IBR = 100 Adc) (IBR = 100 Adc) (IBR = 100 Adc) BAS19 BAS20 BAS21 Min Max - - - - - - 0.1 0.1 0.1 100 100 100 120 200 250 - - - - - 1.0 1.25 Unit Adc IR V(BR) Vdc Forward Voltage (IF = 100 mAdc) (IF = 200 mAdc) VF Diode Capacitance (VR = 0, f = 1.0 MHz) CD - 5.0 pF Reverse Recovery Time (IF = IR = 30 mAdc, IR(REC) = 3.0 mAdc, RL = 100) trr - 50 ns http://onsemi.com 2 Vdc BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1 820 +10 V 2.0 k 100 H IF tp tr 0.1 F IF t trr 10% t 0.1 F 90% D.U.T. 50 INPUT SAMPLING OSCILLOSCOPE 50 OUTPUT PULSE GENERATOR VR IR(REC) = 3.0 mA IR OUTPUT PULSE (IF = IR = 30 mA; MEASURED at IR(REC) = 3.0 mA) INPUT SIGNAL Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 30 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 30 mA. Notes: 3. tp trr Figure 1. Recovery Time Equivalent Test Circuit 1200 25C REVERSE CURRENT (nA) FORWARD VOLTAGE (mV) TA = -55C 1000 800 155C 600 400 200 7000 6000 5000 4000 3000 TA = 155C 6 5 4 3 2 TA = 25C TA = -55C 1 0 1 1 10 100 1000 1 2 5 10 20 50 FORWARD CURRENT (mA) REVERSE VOLTAGE (V) Figure 2. Forward Voltage Figure 3. Reverse Leakage http://onsemi.com 3 100 200 300 BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1 PACKAGE DIMENSIONS SOT-23 (TO-236) CASE 318-09 ISSUE AH NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIUMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318-01, -02, AND -06 OBSOLETE, NEW STANDARD 318-09. A L 3 1 V B 2 S DIM A B C D G H J K L S V G C D H J K INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0385 0.0498 0.0140 0.0200 0.0670 0.0826 0.0040 0.0098 0.0034 0.0070 0.0180 0.0236 0.0350 0.0401 0.0830 0.0984 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.99 1.26 0.36 0.50 1.70 2.10 0.10 0.25 0.085 0.177 0.45 0.60 0.89 1.02 2.10 2.50 0.45 0.60 STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 0.8 0.031 SCALE 10:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 4 BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1 PACKAGE DIMENSIONS SC-88A (SOT-353) CASE 419A-02 ISSUE G A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419A-01 OBSOLETE. NEW STANDARD 419A-02. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. G 5 4 -B- S 1 2 3 D 5 PL 0.2 (0.008) M B DIM A B C D G H J K N S M N INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026 BSC --- 0.004 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 J C K H SOLDERING FOOTPRINT* 0.50 0.0197 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 SCALE 20:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.10 0.10 0.30 0.65 BSC --- 0.10 0.10 0.25 0.10 0.30 0.20 REF 2.00 2.20 BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 http://onsemi.com 6 For additional information, please contact your local Sales Representative. BAS19LT1/D