CLY5 High Power GaAs FET Applications * Test and Measurement Equipment * Defense Communications * General Purpose Wireless 4 Pin SOT-223 Package Product Features * * * * Functional Block Diagram 400 - 2500 MHz Operating Range Wide Operating Voltage Range: +2.7 V to +6 V POUT=+26.5 dBm at VD=+3 V, f=1.8 GHz High Efficiency: >55 % Source 4 General Description 1 2 3 Gate Source Drain Pin Configuration The CLY5 is a high-breakdown voltage GaAs FET designed for power amplifier applications in the 400 MHz to 2.5 GHz frequency range. Excellent linearity and easy impedance matching make this device an ideal choice for portable PA applications in mobile phones and WLAN transceivers. The CLY5 provides +26.5 dBm output power, with an associated gain of 9.5 dB, at 1.8 GHz and VDS=+3 V. Power added efficiencies to 55% are achievable. Pin No. Label 1 2, 4 3 Gate Source Drain The CLY5 is housed in an industry-standard leadfree / green / RoHS-compliant SOT-223 package. Ordering Information Part No. Description CLY5 High Power GaAs FET Standard T/R size = 1000 pieces on a 13" reel. Datasheet: Rev G 08-29-14 (c) 2014 TriQuint - 1 of 9 - Disclaimer: Subject to change without notice www.triquint.com CLY5 High Power GaAs FET Absolute Maximum Ratings Parameter Recommended Operating Conditions Rating -55 to 150C +9 V +12 V -6 V 1.2 A 9W Storage Temperature (TSTG) Drain-source voltage (VDS) Drain-gate voltage (VDG) Gate-source voltage (VGS) Drain current (ID) Pulse peak power (PPULSE) Total power dissipation (PTOT) (Ts < 80 C), Ts: Temperature at soldering point Parameter Min Typ Max Units TCASE TJ (for >106 hours MTTF) -40 +85 +150 C C Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions. 2W Operation of this device outside the parameter ranges given above may cause permanent damage. Electrical Specifications Test conditions unless otherwise noted: TA=+25C, Freq.=1.8 GHz Parameter Symbol Conditions Drain-Source Saturation Current IDSS Drain-Source Pinch-Off Current ID IG Gate Pinch-Off Current VGS(p) Pinch-Off Voltage Small Signal Gain (1) G Small Signal Gain Gp (2) Output Power Po VDS = +3 V, VGS = 0 V VDS = +3 V, VGS = -3.8 V VDS = +3 V, VGS = -3.8 V Typ 600 800 Max Units 1000 mA - 10 100 A - 5 20 A VDS = +3 V, ID = 100 A -3.8 -2.8 -1.8 V VDS = +3 V, ID = 350 mA, PIN = 0 dBm 10.5 11.0 - dB VDS = +5 V, ID = 350 mA, Pin = 0 dBm 11.5 12.0 - dB VDS = +3 V, ID = 350 mA, Pin = 0 dBm 9.0 9.5 - dB VDS = +3 V, ID = 350 mA, Pin = +19 dBm +26.5 +27 - dBm VDS = +5 V, ID = 350 mA, Pin = +21 dBm +29.5 +30 - dBm VDS = +3 V, ID = 350 mA - +26.5 - dBm VDS = +5 V, ID = 350 mA - +30 - dBm 40 55 - % 35 C/W 1dB-Compression Point P1dB Power Added Efficiency PAE VDS = +5 V, ID = 350 mA, Pin = +21 dBm Noise figure NF Rth VDS = +5 V, ID = 350 mA Thermal Resistance Min Channel-soldering point 1.72 dB Notes: 1. Matching conditions for maximum small signal gain (not identical with power matching conditions!) 2. Power matching conditions: f = 1.8 GHz, Source Match (ms) Mag. 0.58; Ang. -143; Load Match (ml) Mag. 0.76; Ang. -116 Datasheet: Rev G 08-29-14 (c) 2014 TriQuint - 2 of 9 - Disclaimer: Subject to change without notice www.triquint.com CLY5 High Power GaAs FET Common Source S-Parameters ( VDS = +3 V ) Test conditions unless otherwise noted: VDS = +3 V, ID = 350 mA (typ.), Temp. = +25 C, 50 Ohm system Freq (GHz) 100 150 200 250 300 400 500 600 700 800 900 1000 1200 1400 1500 1600 1800 2000 2200 2400 2500 3000 3500 4000 4500 5000 5500 6000 S11 (dB) S11 (ang) 0.9702 0.9597 0.9136 0.8786 0.8374 0.7927 0.7507 0.7204 0.6962 0.6923 0.6833 0.6829 0.6922 0.7041 0.7130 0.7197 0.7414 0.7622 0.7798 0.8001 0.8085 0.8413 0.8723 0.8837 0.8914 0.8985 0.9069 0.9159 -30.6 -44.7 -59.6 -71.8 -83.2 -104.6 -122.7 -138.3 -151.7 -163.7 -174.6 175.9 159.0 144.0 137.8 131.2 119.9 109.5 100.5 92.3 88.3 71.7 57.7 45.5 34.7 24.3 13.6 2.7 S21 (dB) 14.9423 14.2076 13.3921 12.5257 11.6493 10.0502 8.7221 7.6207 6.7149 5.9699 5.3660 4.8399 4.0337 3.4168 3.1757 2.9317 2.5649 2.2367 1.9842 1.7624 1.6590 1.2639 1.0034 0.8275 0.7034 0.6140 0.5521 0.5058 S21 (ang) 158.4 148.9 140.2 131.9 124.9 111.8 100.7 91.1 82.8 75.3 67.9 61.7 49.3 38.0 32.7 27.5 17.7 7.8 -1.0 -9.6 -13.8 -32.5 -49.3 -64.9 -78.3 -91.4 -104.5 -118.6 S12 (dB) 0.0103 0.0134 0.0189 0.0218 0.0261 0.0318 0.0374 0.0424 0.0477 0.0519 0.0562 0.0614 0.0687 0.0761 0.0813 0.0849 0.0919 0.0967 0.1015 0.1055 0.1083 0.1145 0.1179 0.1257 0.1247 0.1275 0.1361 0.1389 S12 (ang) 85.9 71.7 67.4 66.8 66.1 60.6 57.7 53.6 49.5 46.7 42.4 41.2 35.3 29.8 26.9 25.6 17.4 11.0 6.3 1.1 -2.7 -15.4 -27.8 -39.5 -50.9 -60.8 -71.5 -83.4 S22 (dB) 0.2969 0.3155 0.3309 0.3402 0.3509 0.3793 0.3970 0.4130 0.4283 0.4377 0.4501 0.4596 0.4811 0.5035 0.5133 0.5259 0.5478 0.5701 0.5931 0.6156 0.6265 0.6780 0.7216 0.7539 0.7710 0.7777 0.7907 0.8089 S22 (ang) -175.8 -177.3 -175.1 -176.1 -177.6 179.2 176.2 172.4 168.0 164.3 160.8 157.2 150.5 143.3 140.4 136.9 130.4 123.9 117.7 111.3 108.2 93.9 81.3 69.6 57.9 46.7 34.8 22.2 Noise Parameters ( VDS = +3 V ) Test conditions unless otherwise noted: VDS = +3 V, ID = 350 mA (typ.), Temp. = +25 C, 50 Ohm system Freq (MHz) NFmin (dB) MagOpt (mag) AngOpt (deg) Rn () rn 900 0.92 0.408 142 3.9 0.79 1800 1.72 0.664 -134 8.1 0.162 Datasheet: Rev G 08-29-14 (c) 2014 TriQuint - 3 of 9 - Disclaimer: Subject to change without notice www.triquint.com CLY5 High Power GaAs FET Common Source S-Parameters ( VDS = +5 V ) Test conditions unless otherwise noted: VDS = +5 V, ID = 350 mA (typ.), Temp. = +25 C, 50 Ohm system Freq (GHz) 100 150 200 250 300 400 500 600 700 800 900 1000 1200 1400 1500 1600 1800 2000 2200 2400 2500 3000 3500 4000 4500 5000 5500 6000 S11 (dB) S11 (ang) 0.9678 0.9318 0.9038 0.8699 0.8353 0.7801 0.7343 0.7033 0.6836 0.6692 0.6638 0.6609 0.6721 0.6855 0.6952 0.7006 0.7226 0.7467 0.7690 0.7902 0.8006 0.8429 0.8759 0.8916 0.8991 0.9035 0.9164 0.9248 -31.3 -43.8 -58.1 -70.1 -81.9 -102.9 -120.2 -135.4 -148.9 -161.2 -172.2 178.3 161.4 146.6 139.7 133.5 122.0 111.9 102.3 93.9 89.9 73.2 59.0 46.9 35.4 24.7 14.0 2.9 S21 (dB) 16.8119 15.8736 15.0157 14.0242 13.0156 11.2669 9.8117 8.5306 7.5315 6.7254 6.0311 5.4737 4.5677 3.8869 3.5927 3.3304 2.9092 2.5470 2.2428 1.9933 1.8674 1.4113 1.1024 0.8874 0.7293 0.6214 0.5480 0.4926 S21 (ang) S12 (dB) S12 (ang) S22 (dB) S22 (ang) 158.4 148.9 140.0 132.0 124.7 111.3 100.2 90.5 82.3 74.3 66.8 60.5 47.7 36.4 30.5 24.9 14.6 4.3 -5.2 -14.4 -18.8 -39.3 -57.2 -73.4 -88.1 -101.3 -114.3 -128.3 0.0095 0.0123 0.0165 0.0187 0.0238 0.0286 0.0332 0.0384 0.0422 0.0473 0.0492 0.0529 0.0629 0.0681 0.0727 0.0729 0.0831 0.0890 0.0963 0.0979 0.1008 0.1107 0.1174 0.1231 0.1242 0.1292 0.1338 0.1380 85.0 72.8 71.3 66.3 64.5 59.2 56.1 53.9 50.2 51.1 44.4 42.5 39.6 34.3 31.2 28.7 24.3 16.4 11.8 5.7 2.6 -9.5 -22.2 -35.3 -47.1 -56.0 -67.4 -80.1 0.1354 0.1527 0.1634 0.1831 0.1947 0.2278 0.2441 0.2660 0.2790 0.2933 0.3080 0.3214 0.3501 0.3745 0.3897 0.4036 0.4333 0.4675 0.4960 0.5287 0.5440 0.6182 0.6831 0.7301 0.7573 0.7784 0.7987 0.8228 -161.6 -159.1 -156.8 -158.0 -160.5 -165.2 -169.2 -173.6 -178.3 178.2 174.1 170.3 162.7 156.4 153.1 149.6 143.0 136.0 129.5 123.0 119.2 104.2 90.0 77.4 64.6 53.0 40.3 27.1 Noise Parameters ( VDS = +5 V ) Test conditions unless otherwise noted: VDS = +5 V, ID = 350 mA (typ.), Temp. = +25 C, 50 Ohm system Freq (MHz) NFmin (dB) MagOpt (mag) AngOpt (deg) Rn () rn 900 1.05 0.369 139 4.9 0.097 1800 1.94 0.603 -132 10.9 0.218 Datasheet: Rev G 08-29-14 (c) 2014 TriQuint - 4 of 9 - Disclaimer: Subject to change without notice www.triquint.com CLY5 High Power GaAs FET Performance Plots Test conditions unless otherwise noted: ID=350 mA (typ.), Freq.=1800 MHz, Temp=+25C P1dB & PAE vs. Drain-Source Voltage 35 70 30 60 P1dB 50 PAE 20 40 15 30 10 20 5 10 0 PAE (%) P1dB (dBm) 25 0 1 2 3 4 5 6 7 8 Drain-Source Voltage (V) P1dB & Gain vs. Drain-Source Voltage 2.0 20 1.6 16 Gain (dB) P1dB (W) Gain 1.2 12 0.8 8 P1dB 0.4 4 0.0 0 1 2 3 4 5 6 7 8 Drain-Source Voltage (V) I-V Characteristics 1.2 1.2 VG0 Temp.=+25C VGp5 1.0 1.0 VG1 VG2 0.8 0.8 Ptot 0.6 0.6 0.4 0.4 0.2 0.2 0.0 PTOTAL (W) Drain Current (ma) VG1p5 0.0 0 1 2 3 4 5 6 Drain-Source Voltage (V) Datasheet: Rev G 08-29-14 (c) 2014 TriQuint - 5 of 9 - Disclaimer: Subject to change without notice www.triquint.com CLY5 High Power GaAs FET Total Power Dissipation Ptot = f(Ts) Ptot 3.2 [W] 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0 0 50 100 O C Ts 150 Permissible Pulse Load Ptotmax/PtotDC = f(tp) Datasheet: Rev G 08-29-14 (c) 2014 TriQuint - 6 of 9 - Disclaimer: Subject to change without notice www.triquint.com CLY5 High Power GaAs FET Increased Power Handling Capability - Pulsed Applications GSM/PCN TDMA-Frame: 4,615ms 577s D = tp T = Take value 0.577 ms = 0.125 4.615ms Ptot max Ptot DC from diagram permissible pulse load --> Ptot max Ptot DC 1.4 Ptot = 2 W x 1.4 = 2.8 W DECT TDMA-Frame: 10ms 417s D = tp T = Take value 10ms = 0.0417 4.615ms Ptot max Ptot DC from diagram permissible pulse load --> Ptot max Ptot DC 1.5 Ptot = 2 W x 1.5 = 3 W Datasheet: Rev G 08-29-14 (c) 2014 TriQuint - 7 of 9 - Disclaimer: Subject to change without notice www.triquint.com CLY5 High Power GaAs FET Package Marking and Dimensions Marking Part Identifier: CLY5 Lot Code: XXXX Date Code: YYWW NOTES: 1. All dimensions are in millimeters. Angles are in degrees Datasheet: Rev G 08-29-14 (c) 2014 TriQuint - 8 of 9 - Disclaimer: Subject to change without notice www.triquint.com CLY5 High Power GaAs FET Product Compliance Information ESD Sensitivity Ratings Solderability Compatible with both lead-free (260 C max. reflow temperature) and tin/lead (245 C max. reflow temperature) soldering processes. Caution! ESD-Sensitive Device Package contact plating: NiPdAu RoHs Compliance MSL Rating This part is compliant with EU 2002/95/EC RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment). MSL Rating: Level 3 Test: 260C convection reflow Standard: JEDEC Standard IPC/JEDEC J-STD-020 This product also has the following attributes: * Lead Free * Halogen Free (Chlorine, Bromine) * Antimony Free * TBBP-A (C15H12Br402) Free * PFOS Free * SVHC Free Contact Information For the latest specifications, additional product information, worldwide sales and distribution locations, and information about TriQuint: Web: www.triquint.com Email: info-sales@tqs.com Tel: Fax: +1.503.615.9000 +1.503.615.8902 For technical questions and application information: Email: sjcapplications.engineering@tqs.com Important Notice The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the information contained herein. TriQuint assumes no responsibility or liability whatsoever for any of the information contained herein. TriQuint assumes no responsibility or liability whatsoever for the use of the information contained herein. The information contained herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with such information is entirely with the user. All information contained herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for TriQuint products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such information. TriQuint products are not warranted or authorized for use as critical components in medical, life-saving, or lifesustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death. Datasheet: Rev G 08-29-14 (c) 2014 TriQuint - 9 of 9 - Disclaimer: Subject to change without notice www.triquint.com