PE42524
Document Category: Product Specification
UltraCMOS® SPDT RF Switch, 10 MHz–40 GHz
©2014-2015, Peregrine Semiconductor Corporation. All rights reserved. • Headquarters: 9380 Carroll Park Drive, San Diego, CA, 92121
Product Specification DOC-48614-4 – (12/2015)
www.psemi.com
Features
• Wideband support up to 40 GHz
• High port to port isolation
▪48 dB @ 26.5 GHz
▪39 dB @ 35 GHz
▪33 dB @ 40 GHz
• Excellent linearity performance
▪P1dB of 31.5 dBm @ 26.5 GHz
▪P1dB of 28.0 dBm @ 35 GHz
▪IIP3 of 50 dBm @ 13.5 GHz
• Fast RF Trise/Tfall time of 55 ns
• Low insertion loss
▪1.8 dB @ 26.5 GHz
▪3.1 dB @ 35 GHz
• Flip-chip die
Applications
• Test and measurement
• Microwave backhaul
• Radar
• Military communications
Product Description
The PE42524 is a HaRP™ technology-enhanced reflective SPDT RF switch die that supports a wide frequency
range from 10 MHz to 40 GHz. This wideband flip-chip switch delivers high isolation performance, excellent
linearity and low insertion loss, making this device ideal for test and measurement (T&M), microwave backhaul,
radar and military communications (mil-comm) applications. At 30 GHz, the PE42524 exhibits 17 dB active port
return loss, 47 dB isolation and 2.2 dB insertion loss. No blocking capacitors are required if DC voltage is not
present on the RF ports.
The PE42524 is manufactured on Peregrine’s UltraCMOS® process, a patented variation of silicon-on-insulator
(SOI) technology on a sapphire substrate.
Figure 1 • PE42524 Functional Diagram
RFC
ESD
RF2RF1
V1 V2
PE42524
SPDT RF Switch
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Peregrine’s HaRP technology enhancements deliver high linearity and excellent harmonics performance. It is an
innovative feature of the UltraCMOS process, offering the performance of GaAs with the economy and
integration of conventional CMOS.
Absolute Maximum Ratings
Exceeding absolute maximum ratings listed in Table 1 may cause permanent damage. Operation should be
restricted to the limits in Table 2. Operation between operating range maximum and absolute maximum for
extended periods may reduce reliability.
ESD Precautions
When handling this UltraCMOS device, observe the same precautions as with any other ESD-sensitive devices.
Although this device contains circuitry to protect it from damage due to ESD, precautions should be taken to
avoid exceeding the rating specified in Table 1.
Latch-up Immunity
Unlike conventional CMOS devices, UltraCMOS devices are immune to latch-up.
Table 1 • Absolute Maximum Ratings for PE42524
Parameter/Condition Min Max Unit
Control voltage (V1, V2) –3.5 3.5 V
RF input power (RFC–RFX, 50Ω)Fig. 2 dBm
Storage temperature range –65 +150 °C
ESD voltage HBM, all pins(*) 2000 V
Note: * Human body model (MIL-STD883 Method 3015).
PE42524
SPDT RF Switch
DOC-48614-4 – (12/2015) Page 3
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Recommended Operating Conditions
Table 2 lists the recommended operating conditions for PE42524. Devices should not be operated outside the
recommended operating conditions listed below.
Electrical Specifications
Table 3 provides the PE42524 key electrical specifications @ 25 °C, V1 = +3.3V, V2 = –3.3V or V1 = –3.3V, V2
= +3.3V (ZS = ZL = 50Ω), unless otherwise specified.
Table 2 • Recommended Operating Condition for PE42524
Parameter Min Typ Max Unit
Control high (V1, V2) 3.1 3.3 3.5 V
Control low (V1, V2) –3.5 –3.3 –3.1 V
Control current 2nA
RF input power, CW (RFC–RFX)(1) Fig. 2 dBm
RF input power, pulsed (RFC–RFX)(2) Fig. 2 dBm
Operating temperature range –40 +25 +85 °C
Notes:
1) 100% duty cycle, all bands, 50Ω.
2) Pulsed, 5% duty cycle of 4620 μs period, 50Ω.
Table 3 • PE42524 Electrical Specifications
Parameter Path Condition Min Typ Max Unit
Operation frequency 10
MHz 40
GHz As
shown
Insertion loss RFC–RFX
10 MHz
10 MHz–7.5 GHz
7.5–10 GHz
10–13.5 GHz
13.5–18 GHz
18–20 GHz
20–26.5 GHz
26.5–30 GHz
30–35 GHz
35–40 GHz
0.6
1.0
1.1
1.3
1.4
1.4
1.8
2.2
3.1
5.5
0.85
1.30
1.50
1.65
1.75
1.75
2.20
2.70
4.10
—
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
PE42524
SPDT RF Switch
Page 4 DOC-48614-4 – (12/2015)
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Isolation All paths
10 MHz
10 MHz–7.5 GHz
7.5–10 GHz
10–13.5 GHz
13.5–18 GHz
18–20 GHz
20–26.5 GHz
26.5–30 GHz
30–35 GHz
35–40 GHz
74
60
58
51
50
49
44
43
35
28
84
64
65
58
53
52
48
47
39
33
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
Return loss (active port) RFC–RFX
10 MHz
10 MHz–7.5 GHz
7.5–10 GHz
10–13.5 GHz
13.5–18 GHz
18–20 GHz
20–26.5 GHz
26.5–30 GHz
30–35 GHz
35–40 GHz
25
16
15
17
21
21
18
17
14
6
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
Return loss (RFC port) RFC–RFX
10 MHz
10 MHZ–7.5 GHz
7.5–10 GHz
10–13.5 GHz
13.5–18 GHz
18–20 GHz
20–26.5 GHz
26.5–30 GHz
30–35 GHz
35–40 GHz
25
18
19
26
29
23
31
30
16
7
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
2nd harmonic, 2fo rejec-
tion RFC–RFX +25 dBm output power, 1 GHz
+25 dBm output power, 6.5 GHz
+25 dBm output power, 15 GHz
88
84
>89(1)
dBc
dBc
dBc
Input 1dB compression
point(2) 10 MHz–40 GHz Fig. 2 dBm
Input IP3
10–100 MHz
1–2 GHz
6–10 GHz
10–13.5 GHz
48
50
52
50
dBm
dBm
dBm
dBm
Video feedthrough(3) DC measurement 3.5 mVPP
RF T rise/Tfall 10%/90% RF 55 ns
Settling time 50% CTRL to 0.05 dB final value 0.84 1.13 μs
Table 3 • PE42524 Electrical Specifications
Parameter Path Condition Min Typ Max Unit
PE42524
SPDT RF Switch
DOC-48614-4 – (12/2015) Page 5
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Control Logic
Table 4 provides the control logic truth table for the
PE42524. States 2 and 3 are used in normal switching
operations.
Switching time 50% CTRL to 90% or 10% RF 225 304 ns
Notes:
1) Test system limited.
2) The input 1dB compression point is a linearity figure of merit. Refer to Table 2 for the RF input power (50Ω).
3) Measured with a 3.5 ns rise time, –3.3 / +3.3V pulse and 500 MHz bandwidth.
Table 3 • PE42524 Electrical Specifications
Parameter Path Condition Min Typ Max Unit
Table 4 • Truth Table for PE42524
V1 V2 RF1 RF2 State
–3.3V –3.3V OFF OFF 1
–3.3V +3.3V OFF ON 2
+3.3V –3.3V ON OFF 3
+3.3V +3.3V ON ON 4
Figure 2 • Power De-rating Curve (10 MHz–40 GHz) @ 25 °C and 85 °C Ambient (50Ω)
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
0.01 5.01 10.01 15.01 20.01 25.01 30.01 35.01 40.01
Input Power (dBm)
Frequency (GHz)
P1 dB Compression / Abs. Max. RF Input Power @ 25°C & 85°C Ambient
Max. RF Input Power, Pulsed @ 25°C & 85°C Ambient
Max. RF Input Power, CW @ 25°C & 85°C Ambient
PE42524
SPDT RF Switch
Page 6 DOC-48614-4 – (12/2015)
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Typical Performance Data
Figure 3–Figure 12 show the typical performance data @ 25 °C, V1 = +3.3V, V2 = –3.3V, unless otherwise
specified.
Figure 3 • Insertion Loss vs Temperature (RFC–RFX)
Figure 4 • Insertion Loss vs V1/V2 (RFC–RFX)
0 5 10 15 20 25 30 35 40
−10
−8
−6
−4
−2
0
Insertion Loss (dB)
Frequency (GHz)
−40°C +25°C +85°C
0 5 10 15 20 25 30 35 40
−10
−8
−6
−4
−2
0
Insertion Loss (dB)
Frequency (GHz)
+3.1V/−3.1V +3.3V/−3.3V
PE42524
SPDT RF Switch
DOC-48614-4 – (12/2015) Page 7
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Figure 5 • RFC Port Return Loss vs Temperature
Figure 6 • RFC Port Return Loss vs V1/V2
0 5 10 15 20 25 30 35 40
−40
−35
−30
−25
−20
−15
−10
Return Loss (dB)
Frequency (GHz)
−40°C +25°C +85°C
0 5 10 15 20 25 30 35 40
−40
−35
−30
−25
−20
−15
−10
Return Loss (dB)
Frequency (GHz)
+3.1V/−3.1V +3.3V/−3.3V
PE42524
SPDT RF Switch
Page 8 DOC-48614-4 – (12/2015)
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Figure 7 • Active Port Return Loss vs Temperature
Figure 8 • Active Port Return Loss vs V1/V2
0 5 10 15 20 25 30 35 40
−40
−35
−30
−25
−20
−15
−10
Return Loss (dB)
Frequency (GHz)
−40°C +25°C +85°C
0 5 10 15 20 25 30 35 40
−40
−35
−30
−25
−20
−15
−10
Return Loss (dB)
Frequency (GHz)
+3.1V/−3.1V +3.3V/−3.3V
PE42524
SPDT RF Switch
DOC-48614-4 – (12/2015) Page 9
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Figure 9 • Isolation vs Temperature (RFX–RFX)
Figure 10 • Isolation vs V1/V2 (RFX–RFX)
0 5 10 15 20 25 30 35 40
−90
−80
−70
−60
−50
−40
−30
−20
−10
0
Frequency (GHz)
Isolation (dB)
−40°C +25°C +85°C
0 5 10 15 20 25 30 35 40
−90
−80
−70
−60
−50
−40
−30
−20
−10
0
Frequency (GHz)
Isolation (dB)
+3.1V/−3.1V +3.3V/−3.3V
PE42524
SPDT RF Switch
Page 10 DOC-48614-4 – (12/2015)
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Figure 11 • Isolation vs Temperature (RFC–RFX)
Figure 12 • Isolation vs V1/V2 (RFC–RFX)
0 5 10 15 20 25 30 35 40
−90
−80
−70
−60
−50
−40
−30
−20
−10
0
Frequency (GHz)
Isolation (dB)
−40°C +25°C +85°C
0 5 10 15 20 25 30 35 40
−90
−80
−70
−60
−50
−40
−30
−20
−10
0
Frequency (GHz)
Isolation (dB)
+3.1V/−3.1V +3.3V/−3.3V
PE42524
SPDT RF Switch
DOC-48614-4 – (12/2015) Page 11
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Recommended Evaluation Setup
The PE42524 s-parameter data and input 1dB compression point from 22–40 GHz (Table 3 and Figure 3–
Figure 12) were taken using grounded co-planar waveguide (CPWG) on the alumina substrate (shown in
Figure 13) and RF probes.
The PE42524 2nd harmonic, 2fo rejection, input 1dB compression point below 18 GHz, input IP3 measure-
ments, settling time and switching time (Table 3) were taken on a PCB using 2.92 mm connectors.
Bypass capacitors are not required.
PCB using 2.92 mm connectors.pacitors are not required
Figure 13 • Alumina Substrate Board for PE42524
RFC
A
lumina substrate board
Thickness: 0.01 in.
εR = 9.9
RF1
V1 V2
RF2
PE42524
DIE
PE42524
SPDT RF Switch
Page 12 DOC-48614-4 – (12/2015)
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Pin Configuration
This section provides pin information for the
PE42524. Figure 14 shows the pin configuration of
this device. Table 5 provides a description for each
pin.
Figure 14 • Pin Configuration (Bumps Up) for PE42524
1345
913
15
14
1618
1719
1210
8
7
6
11
2
GNDV1V2GND
GND GND
GND
GND GND
GND
GND GND
GND
RF1 RF2
GND
GND
RFC GND
Table 5 • Pin Descriptions for PE42524
Pin No. Pin
Name Description
1, 2, 5, 6,
8–10, 12–
14, 16–19 GND Ground
7 RF1 RF port 1
11 RFC RF common port
15 RF2 RF port 2
3 V1 Control input 1
4 V2 Control input 2
PE42524
SPDT RF Switch
DOC-48614-4 – (12/2015) Page 13
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Die Mechanical Specifications
This section provides the die mechanical specifications for the PE42524.
Table 6 • Mechanical Specifications for PE42524
Parameter Min Typ Max Unit Test Condition
Die size, singulated (x, y) 2466 × 2120 2486 × 2140 2516 × 2170 μmIncluding excess sapphire,
max. tolerance = –20 / +30 μm
Wafer thickness 180 200 220 μm
Wafer size 150 mm
Bump pitch 500 μm
Bump height 72.5 85 97.75 μm
Bump diameter 110 μm
UBM diameter 85 90 95 μm
PE42524
SPDT RF Switch
Page 14 DOC-48614-4 – (12/2015)
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Table 7 • Pin Coordinates for PE42524(*)
Pin # Pin Name Pin Center (μm)
X Y
1 GND 1128.5 –958.5
2 GND 731.5 –646.5
3 V1 253.5 –958.5
4 V2 –253.5 –958.5
5 GND –1128.5 –958.5
6 GND –731.5 –646.5
7 RF1 –785.5 –121.5
8 GND –931.5 363.5
9 GND –1091.5 913.5
10 GND –503.5 753.5
11 RFC 0 629
12 GND 503.5 753.5
13 GND 1091.5 913.5
14 GND 931.5 363.5
15 RF2 785.5 –121.5
16 GND 253.5 183.5
17 GND 253.5 –326.5
18 GND –253.5 183.5
19 GND –253.5 –326.5
Note: * All pin locations originate from the die center and refer to the
center of the pin.
Figure 15 • Pin Layout for PE42524(1)(2)
Notes:
1) Drawings are not drawn to scale.
2) Singulated die size shown, bump side up.
1345
913
15
14
1618
1719
1210
8
7
6
11
2
GNDV1V2GND
GND GND
GND
GND GND
GND
GND GND
GND
RF1 RF2
GND
GND
RFC GND
2140 μm (−20 / +30 μm)
2486 μm (−20 / +30 μm)
PE42524
SPDT RF Switch
DOC-48614-4 – (12/2015) Page 15
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Tape and Reel Specification
This section provides the tape and reel specifications for the PE42524.
Figure 16 • Tape and Reel Specifications for PE42524
4.00 ± 0.1
0.20 ± 0.05
Ko
Bo
Ao
4.00 ± 0.1
2.00 ± 0.05
1.75 ± 0.1
3.50 ± 0.05
8.00 ± 0.1
ø1.50 ± 0.1
ø0.50 ± 0.05
Device Orientation in Tape
Pin 1
Ao
Bo
Ko
Nominal
2.35
2.66
0.395
Tolerance
± 0.05
± 0.05
± 0.05
Notes:
Not Drawn to Scale
Dimensions are in millimeters
Maximum cavity angle 5 degrees
Bumped die are oriented active side down
Pocket
PE42524 SPDT RF Switch
Product Specification www.psemi.com DOC-48614-4 – (12/2015)
Document Categories
Advance Information
The product is in a formative or design stage. The datasheet contains
design target specifications for product development. Specifications
and features may change in any manner without notice.
Preliminary Specification
The datasheet contains preliminary data. Additional data may be added
at a later date. Peregrine reserves the right to change specifications at
any time without notice in order to supply the best possible product.
Product Specification
The datasheet contains final data. In the event Peregrine decides to
change the specifications, Peregrine will notify customers of the
intended changes by issuing a CNF (Customer Notification Form).
Product Brief
This document contains a shortened version of the datasheet. For the
full datasheet, contact sales@psemi.com.
Not Recommended for New Designs (NRND)
This product is in production but is not recommended for new designs.
End of Life (EOL)
This product is currently going through the EOL process. It has a
specific last-time buy date.
Obsolete
This product is discontinued. Orders are no longer accepted for this
product.
Sales Contact
For additional information, contact Sales at sales@psemi.com.
Disclaimers
The information in this document is believed to be reliable. However, Peregrine assumes no liability for the use of this information. Use shall be
entirely at the user’s own risk. No patent rights or licenses to any circuits described in this document are implied or granted to any third party.
Peregrine’s products are not designed or intended for use in devices or systems intended for surgical implant, or in other applications intended to
support or sustain life, or in any application in which the failure of the Peregrine product could create a situation in which personal injury or death
might occur. Peregrine assumes no liability for damages, including consequential or incidental damages, arising out of the use of its products in
such applications.
Patent Statement
Peregrine products are protected under one or more of the following U.S. patents: patents.psemi.com
Copyright and Trademark
©2014-2015, Peregrine Semiconductor Corporation. All rights reserved. The Peregrine name, logo, UTSi and UltraCMOS are registered trade-
marks and HaRP, MultiSwitch and DuNE are trademarks of Peregrine Semiconductor Corp.
Ordering Information
Table 8 lists the available ordering code for the PE42524 as well as shipping method.
Table 8 • Order Code for PE42524
Order Code Description Packaging Shipping Method
PE42524A–X PE42524 SPDT RF switch Die on tape and reel 500 die / T&R
