R07DS0134EJ0500 Rev.5.00 Page 1 of 7
Sep 15, 2010
Preliminary Datasheet
BCR08AS-12A
Triac
Low Power Use
Features
IT (RMS) : 0.8 A
VDRM : 600 V
IFGTI, IRGTI, IRGT III : 5 mA
IFGT III : 10 mA
Non-Insulated Type
Planar Passivation Type
Surface Mounted type
Completed Pb Free
Outline
RENESAS Package code:
PLZZ
000
4
C
A-A
(
Package name:
U
PAK
)
2
4
13
RENESAS Package code
LZZ0004CB-A
(
Package name:
SOT
2, 4
13
1. T
1
Terminal
2. T
2
Terminal
3. Gate Terminal
4. T
2
Terminal
21
3
ode: ode:
PLPL
OT-89OT-89
))
4
4
OL
OL
OL
OL
OL P
O
Applications
Hybrid IC, solid state relay, electric fan, washing machine, and other general purpose control applications
Maximum Ratings
Voltage class
Parameter Symbol
12 (Mark BF) Unit
Repetitive peak off-state voltageNote1 V
DRM 600 V
Non-repetitive peak off-state voltageNote1 V
DSM 720 V
Parameter Symbol Ratings Unit Conditions
RMS on-state current IT (RMS) 0.8 A
Commercial frequency, sine full wave
360° conduction, Ta = 40CNote3
Surge on-state current ITSM 8 A
60Hz sinewave 1 full cycle, peak value,
non-repetitive
I2t for fusing I2t 0.26 A2s Value corresponding to 1 cycl e of half
wave 60Hz, surge on-state current
Peak gate power dissipation PGM 1 W
Average gate power dissipation PG (AV) 0.1 W
Peak gate voltage VGM 10 V
Peak gate current IGM 1 A
Junction temperature Tj – 40 to +125 C
Storage temperature Tstg – 40 to +125 C
Mass — 50 mg Typical value
Notes: 1. Gate open.
R07DS0134EJ0500
(Previous: REJ03G0292-0400)
Rev.5.00
Sep 15, 2010
BCR08AS-12A Preliminary
R07DS0134EJ0500 Rev.5.00 Page 2 of 7
Sep 15, 2010
Electrical Characteristics
Parameter Symbol Min. Typ. Max. Unit Test conditions
Repetitive peak off-state current IDRM — — 2.0 mA Tj = 125C, VDRM applied
On-state voltage VTM — — 2.0 V
Tc = 25C, ITM = 1.2 A,
Instantaneous measurement
V
FGT — — 2.0 V
V
RGT — — 2.0 V
V
RGT — — 2.0 V
Gate trigger voltageNote2
V V
FGT — — 2.0 V
Tj = 25C, VD = 6 V, RL = 6 ,
RG = 330
I
FGT — — 5 mA
I
RGT — — 5 mA
I
RGT — — 5 mA
Gate trigger currentNote2
V I
FGT — — 10 mA
Tj = 25C, VD = 6 V, RL = 6 ,
RG = 330
Gate non-trigger voltage VGD 0.1 — — V Tj = 125C, VD = 1/2 VDRM
Thermal resistance Rth (j-a) — — 65 C/W Junction to ambientNote3
Critical-rate of rise of off-state
commutating voltageNote4 (dv/dt)c 0.5 — — V/s Tj = 125C
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. Sold ering with ceramic plate (25 mm 25 mm t0.7 mm).
4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
Test conditions Commutating voltage and current waveforms
(inductive load)
1. Junction temperature
Tj = 125C
2. Rate of decay of on-state commutating current
(di/dt)c = – 0.4 A/ms
3. Peak off-state voltage
VD = 400 V
Supply Voltage
Time
Time
Time
Main Current
Main Voltage
(di/dt)c
V
D
(dv/dt)c
BCR08AS-12A Preliminary
R07DS0134EJ0500 Rev.5.00 Page 3 of 7
Sep 15, 2010
Performance Curves
Maximum On-State Characteristics
On-State Voltage (V)
On-State Current (A)
Rated Surge On-State Current
Conduction Time (Cycles at 60Hz)
Surge On-State Current (A)
Gate Characteristics
Gate Current (mA)
Gate Voltage (V)
Gate Trigger Voltage vs.
Junction Temperature
Junction Temperature (°C)
Gate Trigger Voltage (Tj = t°C)
Gate Trigger Voltage (Tj = 25°C)
×
100 (%)
Gate Trigger Current vs.
Junction Temperature
Junction Temperature (°C)
Gate Trigger Current (Tj = t°C)
Gate Trigger Current (Tj = 25°C)
× 100 (%)
Maximum Transient Thermal Impedance
Characteristics (Junction to ambient)
Conduction Time (Cycles at 60Hz)
Transient Thermal Impedance (°C/W)
10
–1
10
1
7
5
3
2
012
10
0
7
5
3
2
345
4
4
10
0
2510
1
4
2
37
10
2
4
25374
6
8
10
0
10
0
2310
0
5710
1
23 5710
2
23 5710
3
10
2
7
5
3
2
10
1
7
5
3
2
7
5
3
2
10
–1
VGT
10
1
10
3
7
5
3
2
–60–20 20
10
2
7
5
3
2
60100
140
4
4
–400 40 80 120
I
VRGT VRGT III
I
VFGT VFGT III
10
1
10
3
7
5
3
2
–60–20 20
10
2
7
5
3
2
60100
140
4
4
–400 4080120
10
1
2310
–1
5710
0
23 5710
1
23 5710
2
10
3
7
5
3
2
10
2
7
5
3
2
7
5
3
2
10
0
2310
2
5710
3
23 5710
4
23 5710
5
Junction to ambient *
* 25mm
×
25mm
×
t0.7mm
Ceramic plate
Tj = 25°C
Tj = 125°C
Typical Example
VGM = 10V
IGM = 1A
VGD = 0.2V
IFGT I,
IFGT III
IRGT I, IRGT III
PGM = 1W
PG(AV)
= 0.1W
IFGT I, IRGT III, IRGT I
IFGT III
Typical Example
BCR08AS-12A Preliminary
R07DS0134EJ0500 Rev.5.00 Page 4 of 7
Sep 15, 2010
On-State Power Dissipation (W)
RMS On-State Current (A)
Maximum On-State Power Dissipation
RMS On-State Current (A)
Ambient Temperature (°C)
Allowable Ambient Temperature vs.
RMS On-State Current
Junction Temperature (°C)
Repetitive Peak Off-State Current (Tj = t°C)
Repetitive Peak Off-State Current (Tj = 25°C) × 100 (%)
Repetitive Peak Off-State Current vs.
Junction Temperature Holding Current vs.
Junction Temperature
Junction Temperature (°C)
Holding Current (Tj = t°C)
Holding Current (Tj = 25°C) × 100 (%)
Latching Current (mA)
Latching Current vs.
Junction Temperature
Junction Temperature (°C)
2.0
1.6
1.2
0.8
0.4
02.0
00.4 0.81.2 1.6
160
120
100
60
20
01.6
00.20.6 1.01.4
40
80
140
0.4 0.8 1.2
10
3
7
5
3
2
10
2
7
5
3
2
10
1
160
100
80
40
20
014040–40–60–20 0 20 6080
140
100120
60
120
14040–40–60–20 0 20 60 80 100120
10
5
7
5
3
2
10
4
7
5
3
2
10
3
7
5
3
2
10
2
14040–40–60–20 0 20 60 80 100120
160–400 4080120
10
2
7
5
3
2
10
1
7
5
3
2
10
0
7
5
3
2
10
–1
Typical ExampleTypical Example
Distribution
Breakover Voltage vs.
Junction Temperature
Junction Temperature (°C)
Breakover Voltage (Tj = t°C)
Breakover Voltage (Tj = 25°C) × 100 (%)
360° Conduction
Resistive,
inductive loads
Curves apply regardless
of conduction angle
Resistive, inductive loads
Natural convection
Typical Example
T
2
+, G–
Typical Example
T
2
+, G+
T
2
–, G–
T
2
–, G+Typical Example
⎫
⎬
⎭
25mm
×
25mm
×
t0.7mm
Ceramic plate
BCR08AS-12A Preliminary
R07DS0134EJ0500 Rev.5.00 Page 5 of 7
Sep 15, 2010
Rate of Rise of Off-State Voltage (V/μs)
Breakover Voltage (dv/dt = xV/μs)
Breakover Voltage (dv/dt = 1V/μs)× 100 (%)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage Commutation Characteristics
Critical Rate of Rise of Off-State
Commutating Voltage (V/μs)
Rate of Decay of On-State
Commutating Current (A/ms)
Gate Trigger Current (tw)
Gate Trigger Current (DC) × 100 (%)
Gate Current Pulse Width (μs)
Gate Trigger Current vs.
Gate Current Pulse Width
Test Procedure I
Test Procedure III Test Procedure IV
Test Procedure II
Gate Trigger Characteristics Test Circuits
2310
0
5710
1
23 5710
2
23 5710
3
120
0
20
40
60
80
100
140
160
10
–1
23 5710
0
10
0
7
5
3
2
23 5710
1
10
1
7
5
3
2
10
–1
10
1
10
3
7
5
3
2
10
0
2510
1
10
2
7
5
3
2
3710
2
4
4
42537
4
6Ω6Ω
6Ω6Ω
6V 6V
6V 6V
330Ω330Ω
330Ω330Ω
A
V
A
V
A
V
A
V
Typical Example
Tj = 125°C
I Quadrant
III Quadrant Minimum
Characteristics
ValueI Quadrant
III Quadrant
Typical Example
Tj = 125°C
IT = 1A
τ = 500μs
VD = 200V
Typical Example
I
FGT I
I
FGT III
I
RGT I
I
RGT III
BCR08AS-12A Preliminary
R07DS0134EJ0500 Rev.5.00 Page 6 of 7
Sep 15, 2010
Package Dimensions
4.5 ± 0.1
1.8 Max1.5 ± 0.1
0.44 Max
0.44 Max
0.48 Max
0.53 Max
1.5 1.5
3.0
2.5 ± 0.1
4.25 Max
0.8 Min
φ1
0.4
(1.5)
(2.5)
(0.4)
(0.2)
Previous Code
PLZZ0004CA-AUPAK / UPAKV MASS[Typ.]
0.050gSC-62RENESAS CodeJEITA Package Code Unit: mm
Package Name
UPAK
SC
-62
0
.4
8g
MA
SS
[Typ.
]
⎯
P
LZZ0004
C
B-A
RENE
S
A
S
C
odeJEITA Package
C
ode Previous
C
ode Unit: mm
4.6Max
0.48Max
0.58Max
3.0
1.5
4.2Ma
2.5
1.6 ± 0.2
0.4
+0.03
–0.05
P
acka
g
e Name
SO
T-
89
EOL PKG
L P
OL
OL
L
OL
OL
L
L
OL
L
OL
L
L
L
K
K
K
PK
P
P
P
PK
PK
PK
PK
P
P
P
P
O
OL
O
O
O
O
K
KG
PK
K
K
OL
OL
OL
OL
L
L
L
L
L
L
O
K
K
K
K
K
K
O
O
O
O
O
O
Max
0
.
8
Min
n
55
±±
0
.1
0.1
1
.5
1.5
±±
0
.
1 0.1
BCR08AS-12A Preliminary
R07DS0134EJ0500 Rev.5.00 Page 7 of 7
Sep 15, 2010
Order Code
Lead form Standard packing Quantity Standard order code Standard order
code example
Surface-mounted type Taping 4000 Type name –T +Direction (1 or 2)+4 BCR08AS-12A-T14
Note : Please confirm the specification about the shipping in detail.
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