Amplifiers for infrared detectors C4159/C5185 series C3757-02 Low noise amplifiers for infrared detector (InSb, InAs, InGaAs, MCT, PbS, PbSe) Accessories Instruction manual Power cable (one end with 4-pin connector for connection to amplifier and the other end unterminated, 2 m) A4372-02 Required power supply specifications * * * * * C4159 series: 15 V (12.0 to 17.5 V can also be used) C5185 series: 15 V (15.0 to 17.5 V can also be used) Current-carrying capacity: 1.5 times or more of amplifier's maximum current consumption Ripple noise: 5 mVp-p or less Analog power supply only Recommended DC power supply: E3620A, E3630A (Agilent Technologies) Absolute maximum ratings (Ta=25 C) Parameter Operating temperature Storage temperature Value 0 to +40 -20 to +70 Unit C C Amplifiers for photovoltaic detectors (Typ.) Parameter Applicable detector Conversion impedance Frequency response (amp only, -3 dB) Output impedance Maximum output voltage (1 k load) Output offset voltage Equivalent input noise current (f=1 kHz) Reverse voltage External power supply Current consumption *3 C4159-01 C4159-04 C4159-05 InAs (dewar type) InSb (dewar type) *1 InSb (dewar type) *1 (P5968-060, P5968-100) (P5968-200) (P7163) 108, 107, 106 2 x 107, 2 x 106, 2 x 105 108, 107, 106 (3 ranges switchable) (3 ranges switchable) (3 ranges switchable) C4159-06 InAs (P10090 series) 106, 105, 104 (3 ranges switchable) Unit V/A DC to 100 kHz *2 DC to 45 kHz DC to 15 kHz DC to 100 kHz - 50 50 50 50 +10 +10 +10 +10 V 5 0.15 (108, 107 range) 0.65 (106 range) 5 5 mV 6 pA/Hz1/2 +30, -22 Max. V mA 10 0.15 (108, 107 range) 0.55 0.65 (106 range) Limited to 0 V operation 15 +30, -10 Max. *1: Custom types for multi-element detectors are also available. *2: When connected to a detector, frequency response becomes 60 kHz or less depending on the detector active area. (0.6 mm: 60 kHz or less, 1 mm: 25 kHz or less) Ringing occurs in the output if the rise time tr (0 to 90 %) of incident light is approximately 100 s or less. The ringing becomes larger as the rise time becomes shorter. No ringing occurs when detecting sine-wave light. (For information on the ringing specifications, see page 2.) *3: Recommended DC power supply (analog power supply): 15 V Current capacity: More than 1.5 times the maximum current consumption Ripple noise: 5 mVp-p or less Note: Output noise voltage = Equivalent input noise current x Conversion impedance For information about accessories except for the amplifiers, refer to our datasheet "Infrared detector accessories". www.hamamatsu.com 1 Amplifiers for infrared detectors C4159/C5185 series, C3757-02 Ringing Vri Ringing specifications 5V 90 % 10 % tr Incident light Output waveform when tr = 40 s and active area is 0.6 mm Ringing Vri 1.5 V Oscillating cycle 3 cycles KIRDC0090EA Amplifiers for InGaAs PIN photodiodes (Typ.) Parameter Applicable detector C4159-03 InGaAs 107, 106, 105 (3 ranges switchable) Unit - DC to 15 kHz - 50 +10 V 5 mV 2.5 pA/Hz1/2 Can be applied from external unit 15 15 Max. V mA Conversion impedance Frequency response (amp only, -3 dB) Output impedance Maximum output voltage (1 k load) Output offset voltage Equivalent input noise current (f=1 kHz) Reverse voltage External power supply Current consumption *3 V/A Amplifiers for photoconductive detectors (Typ.) Parameter Applicable detector Input impedance Voltage gain Frequency response (amp only, -3 dB) Detector bias current Output impedance Maximum output voltage (1 k load) Equivalent input noise voltage (f=1 kHz) External power supply Current consumption *3 C5185 MCT (dewar type), InSb (P6606 series) 5 66 (x 2000) C5185-01 MCT (P3981/P2750 series) *4 5 66 (x 2000) C3757-02 Unit PbS, PbSe - 10000 40 (x 100) k dB 0.2 Hz to 10 kHz - Internal bias - 50 5 Hz to 250 kHz 5 Hz to 250 kHz 5 mA, 10 mA, 15 mA (3 ranges switchable) 50 0.1 mA, 0.5 mA, 1 mA (3 ranges switchable) 50 2.5 2.5 10 V 2.6 1.2 40 nV/Hz1/2 15 +60, -10 Max. 15 +60, -10 Max. 15 +15, -15 Max. V mA Note: Output noise voltage = Equivalent input noise voltage x Voltage gain *3: Recommended DC power supply (analog power supply): 15 V Current capacity: More than 1.5 times the maximum current consumption Ripple noise: 5 mVp-p or less *4: Preamp for P3257-25/-30/-31 available upon request 2 Amplifiers for infrared detectors C4159/C5185 series, C3757-02 Dimensional outlines (unit: mm) 24.5 30 PREAMPLIFIER POWER HIGH MID LOW IN OUT 39.5 IN 60 HIGH MID LOW 39.5 24.5 12.5 25 PREAMPLIFIER POWER 60 37 4-pin connector 11.5 4-pin connector C5185/-01 11.5 C4159-01/-03/-04/-05/-06 OUT BNC Bias adjusting screw Gain adjusting screw Offset voltage adjusting screw BNC connector BNC connector 85 18 18 26.2 23 15 35 23 30 21.2 85 KIRDA0048EB Solder leads to these terminals. Note: Socket for lead attachment is not provided. KIRDA0046EB C3757-02 OUT 38.5 60 IN 13.5 PREAMPLIFIER POWER 25 37 12.5 4-pin connector BNC connector 18 12 18 30 85 Solder leads to these terminals. Note: Socket for lead attachment is not provided. KIRDA0049EB 3 Amplifiers for infrared detectors C4159/C5185 series, C3757-02 A4372-02 2000 100 70 10 27 11 4.8 1.1 10 3 Shielded wire (4 conductors) Solder processing Connector: HR10-7P-4P (made by Hirose Electric) KIRDA0196EA The C4159-03, C5185 and C3757-02 conform to the European EMC directives (Applied standard: EN 61326 Class B). Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. Type numbers of products listed in the specification sheets or supplied as samples may have a suffix "(X)" which means tentative specifications or a suffix "(Z)" which means developmental specifications. (c)2010 Hamamatsu Photonics K.K. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvagen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int.6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Cat. No. KIRD1011E11 Mar. 2010 DN 4