Ordering number:ENN680F PNP Epitaxial Planar Silicon Transistors NPN Triple Diffused Planar Silicon Transistors 2SB817/2SD1047 140V/12A AF 60W Output Applications Package Dimensions unit:mm 2022A [2SB817/2SD1047] 15.6 14.0 3.2 3.5 4.8 2.0 1.2 15.0 20.0 * Capable of being mounted easily because of onepoint fixing type plastic molded package (Interchangeable with TO-3). * Wide ASO because of on-chip ballast resistance. * Good depenedence of fT on current and excellent high frequency responce. 2.6 Features 1.3 The descriptions in parentheses are for the 2SB817 only : other descriptions than those in parentheses are common to the 2SB817 and 2SD1047. 1.6 20.0 2.0 0.6 1.0 2 3 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PB 1.4 1 0.6 Specifications 5.45 5.45 Absolute Maximum Ratings at Ta = 25C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Ratings Unit (-)160 V (-)140 V VEBO IC (-)6 V (-)12 A ICP PC Collector Dissipation Conditions VCBO VCEO Junction Temperature Tj Storage Temperature Tstg (-)15 A 100 W 150 C -40 to +150 C Tc=25C Electrical Characteristics at Ta = 25C Parameter Symbol Conditions Ratings min typ max Unit Collector Cutoff Current ICBO VCB=(-)80V, IE=0 (-)0.1 mA Emitter Cutoff Current IEBO VEB=(-)4V, IC=0 (-)0.1 mA hFE1 VCE=(-)5V, IC=(-)1A 60* hFE2 VCE=(-)5V, IC=(-)6A VCE=(-)5V, IC=(-)1A 20 DC Current Gain Gain-Bandwidth Product fT Output Capacitance Cob VCB=(-)10V, f=1MHz * : The 2SB817/2SD1047 are classified by 1A hFE as follows : 200* 15 MHz (300) pF 210 pF Continued on next page. Rank D E hFE 60 to 120 100 to 200 Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 91003TN (KT)/91098HA (KT)/90595MO (KOTO)/4017KI/6284KI, MT 8-3416/7039 No.680-1/4 2SB817/2SD1047 Continued from preceding page. Parameter Symbol Base-to-Emitter Voltage VBE Collector-to-Emitter Saturation Voltage min IC=(-)5A, IB=(-)0.5A Emitter-to-Base Breakdown Voltage Turn-ON Time ton Fall Time Storage Time V 2.5 V V (-)160 V (-)140 V (-)140 V (-)6 V See specified Test Circuit tstg 1.5 (1.1) See specified Test Circuit tf Unit max 0.6 V(BR)CBO IC=(-)5mA, IE=0 IC=(-)5mA, RBE= V(BR)CEO IC=(-)50mA, RBE= V(BR)EBO IE=(-)5mA, IC=0 Collector-to-Emitter Breakdown Voltage typ VCE=(-)5V, IC=(-)1A VCE(sat) Collector-to-Base Breakdown Voltage Ratings Conditions See specified Test Circuit (0.25) s 0.26 s (0.53) s 0.68 s (1.61) s 6.88 s Switching Time Test Circuit IB1 OUTPUT IB2 1 PW=20s INPUT 20 200VR 51 VCC=20V 1F VBE= --2V 1F 10IB1= --10IB2=IC=1A (For PNP, the polarity is reversed.) IC -- VCE --10 IC -- VCE 10 A 0m --120mA --6 --80mA --4 --40mA --20mA --2 IB=0 0 0 --10 --20 --30 8 A 120m 80mA 6 40mA 4 20mA 2 IB=0 0 --40 0 Collector-to-Emitter Voltage, VCE - V ITR08419 30 --5 --4 --3 --2 --1 40 ITR08420 2SD1047 VCE=5V 6 Collector Current, IC - A Collector Current, IC - A 20 IC -- VBE 7 2SB817 VCE= --5V --6 10 Collector-to-Emitter Voltage, VCE - V IC -- VBE --7 2SD1047 200mA 160mA 24 --20 A --160m Collector Current, IC - A A 0m --8 --2 4 Collector Current, IC - A 2SB817 0mA 5 4 3 2 1 0 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 Base-to-Emitter Voltage, VBE - V --1.4 --1.6 ITR08421 0 0.2 0.4 0.6 0.8 1.0 1.2 Base-to-Emitter Voltage, VBE - V 1.4 1.6 ITR08422 No.680-2/4 2SB817/2SD1047 f T -- IC 2SB817 VCE= --5V 3 2 10 7 5 3 2 1.0 --0.1 2 3 5 7 2 --1.0 3 5 Collector Current, IC - A --10 ITR08423 10 7 5 3 2 2 3 5 2 100 2 1.0 3 5 hFE -- IC 2SD1047 VCE=5V 5 3 2 7 5 3 3 2 2 2 3 5 7 --1.0 2 3 5 Collector Current, IC - A 10 0.1 7 --10 2 ITR08425 2 3 5 7 2 1.0 3 5 1000 Output Capacitance, Cob - pF Output Capacitance, Cob - pF 2SD1047 f=1MHz f=1MHz 7 5 3 2 100 7 5 3 7 5 3 2 100 7 5 3 2 3 5 7 --10 2 3 5 Collector-to-Base Voltage, VCB -- V 2 1.0 7 --100 ITR08427 --10 7 5 3 2 --1.0 7 5 3 2 5 7 --1.0 2 3 Collector Current, IC - A 5 7 --10 ITR08429 5 7 10 2 3 5 7 100 ITR08428 VCE(sat) -- IC 2SD1047 IC / IB=10 2 Collector-to-Emitter Saturation Voltage, VCE (sat) - V 2SB817 IC / IB=10 3 3 3 2 2 2 Collector-to-Base Voltage, VCB -- V VCE(sat) -- IC 3 Collector-to-Emitter Saturation Voltage, VCE (sat) - V 2 10 ITR08426 Cob -- VCB 2 2SB817 f=1MHz f=1MHz 1000 7 Collector Current, IC - A Cob -- VCB 2 --0.1 7 5 --0.1 7 10 ITR08424 100 7 2 --1.0 5 7 DC Current Gain, hFE 3 7 Collector Current, IC - A 2SB817 VCE= --5V 5 DC Current Gain, hFE 2 1000 7 10 --0.1 2SD1047 VCE=5V 3 1.0 0.1 7 hFE -- IC 1000 f T -- IC 5 Gain-Bandwidth Product, fT - MHz Gain-Bandwidth Product, fT - MHz 5 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 0.1 2 3 5 7 1.0 2 3 Collector Current, IC - A 5 7 10 ITR08430 No.680-3/4 2SB817/2SD1047 VBE(sat) -- IC 3 2 --10 7 5 3 2 --1.0 2 10 7 5 3 2 7 5 --0.1 2 3 5 7 2 --1.0 3 5 Collector Current, IC - A 5 0.1 7 --10 ITR08431 ASO 2 IC=12A 5 DC 3 1m 10 10 ms 0m s ope 2 ion 1.0 7 5 3 2SB817 / 2SD1047 (For PNP, minus sign is omitted.) 5 7 10 5 7 2 1.0 3 5 Collector Current, IC - A 7 10 ITR08432 PC -- Tc 100 s rat 0.1 3 2SB817 / 2SD1047 7 2 2 120 ICP=15A Collector Dissipation, PC - W Collector Current, IC - A 2SD1047 IC / IB=10 3 1.0 7 10 VBE(sat) -- IC 5 2SB817 IC / IB=10 Base-to-Emitter Saturation Voltage, VBE (sat) - V Base-to-Emitter Saturation Voltage, VBE (sat) - V 5 2 3 80 60 40 20 0 5 7 100 2 Collector-to-Emitter Voltage, VCE - V ITR08433 0 20 40 60 80 100 120 Case Temperature, Tc - C 140 160 ITR08434 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of September, 2003. Specifications and information herein are subject to change without notice. PS No.680-4/4