Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP Epitaxial Planar Silicon Transistors
NPN Triple Diffused Planar Silicon Transistors
140V/12A AF 60W Output Applications
Ordering number:ENN680F
2SB817/2SD1047
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
91003TN (KT)/91098HA (KT)/90595MO (KOTO)/4017KI/6284KI, MT 8-3416/7039 No.680–1/4
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
OBC 061)–(V
egatloVrettimE-ot-rotcelloCV
OEC 041)–(V
egatloVesaB-ot-rettimEV
OBE 6)–(V
tnerruCrotcelloCI
C21)–(A
)esluP(tnerruCrotcelloCI
PC 51)–(A
noitapissiDrotcelloCP
C001W
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot04–
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Package Dimensions
unit:mm
2022A
[2SB817/2SD1047]
Features
· Capable of being mounted easily because of one-
point fixing type plastic molded package (Inter-
changeable with TO-3).
· Wide ASO because of on-chip ballast resistance.
· Good depenedence of fT on current and excellent
high frequency responce.
The descriptions in parentheses are for the 2SB817 only :
other descriptions than those in parentheses are common
to the 2SB817 and 2SD1047.
˚C
˚C
Electrical Characteristics at Ta = 25˚C
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PB
Tc=25˚C
retemaraPlobmySsnoitidnoC sgnitaR tinU
nimpytxam
tnerruCffotuCrotcelloCI
OBC VBC I,V08)–(= E0=1.0)–(Am
tnerruCffotuCrettimEI
OBE VBE I,V4)–(= C0=1.0)–(Am
niaGtnerruCCD hEF 1V
EC I,V5)–(= CA1)–(=*06*002
hEF 2V
EC I,V5)–(= CA6)–(=02
tcudorPhtdiwdnaB-niaGf
TVEC I,V5)–(= CA1)–(=51zHM
ecnaticapaCtuptuOC
bo VBC zHM1=f,V01)–(= )003(Fp
012Fp
* : The 2SB817/2SD1047 are classified by 1A hFE as follows : Continued on next page.
knaRDE
hEF 021ot06002ot001
15.6
2.6
3.5
1.2
14.0
1.6
1.0
2.0
0.6
20.0 20.0
15.0
1.3
3.2 4.8 2.0
0.6
5.45
5.45
1.4
123
2SB817/2SD1047
No.680–2/4
retemaraPlobmySsnoitidnoC sgnitaR tinU
nimpytxam
egatloVrettimE-ot-esaBV
EB VEC I,V5)–(= CA1)–(=5.1V
egatloVnoitarutaSrettimE-ot-rotcelloCV
)tas(EC ICI,A5)–(= BA5.0)–(= 6.05.2V
)1.1(V
egatloVnwodkaerBesaB-ot-rotcelloCV
OBC)RB( ICI,Am5)–(= E0=061)–(V
egatloVnwodkaerBrettimE-ot-rotcelloCV
OEC)RB( ICR,Am5)–(= EB =∞041)–(V
ICR,Am05)–(= EB =∞041)–(V
egatloVnwodkaerBesaB-ot-rettimEV
OBE)RB( IEI,Am5)–(= C0=6)–(V
emiTNO-nruTt
no tiucriCtseTdeificepseeS )52.0(sµ
62.0sµ
emiTllaFt
ftiucriCtseTdeificepseeS )35.0(sµ
86.0sµ
emiTegarotSt
gts tiucriCtseTdeificepseeS )16.1(sµ
88.6sµ
Switching Time Test Circuit
Continued from preceding page.
200VR
1Ω
VCC=20V
VBE= --2V
51Ω
INPUT
OUTPUT
20Ω
1µF1µF
PW=20µs
IB1
IB2
10IB1= --10IB2=IC=1A
(For PNP, the polarity is reversed.)
IC -- VCE
0 --10 --20 --30 --40
0
--2
--4
--6
--8
--10
0 10203040
0
2
4
6
8
10
0
1
2
3
4
5
6
7
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
ITR08419
IC -- VBE
ITR08421
2SB817
IC -- VBE
ITR08422
2SD1047
VCE=5V
IB=0
IC -- VCE
ITR08420
2SD1047
IB=0
40mA
80mA
20mA
200mA
240mA
160mA
120mA
0
--1
--2
--3
--4
--5
--6
--7
0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6
2SB817
VCE= --5V
--80mA
--20mA
--40mA
--200mA
--240mA
--160mA
--120mA
Collector Current, IC–A
Collector-to-Emitter Voltage, VCE –V
Collector Current, IC–A
Collector-to-Emitter Voltage, VCE –V
Collector Current, IC–A
Base-to-Emitter Voltage, VBE –V
Collector Current, IC–A
Base-to-Emitter Voltage, VBE –V
2SB817/2SD1047
No.680–3/4
Cob -- VCB
f=1MHz
ITR08427
VCE(sat) -- IC
ITR08429
5
--0.1
--1.0
5
7
2
3
7
--10
5
7
2
3
2
3
--1.0--0.1 23 57 --10
23 57
2SB817
IC / IB=10
2
100
1000
5
7
2
3
2
5
7
3
--10--1.0 23 57 --100
23 57
2SB817
f=1MHz
Cob -- VCB
f=1MHz
ITR08428
2
100
1000
5
7
2
3
2
5
7
3
101.0 23 57 100
23 57
2SD1047
f=1MHz
VCE(sat) -- IC
ITR08430
5
0.1
1.0
5
7
2
3
7
10
5
7
2
3
2
3
1.00.1 23 57 10
23 57
2SD1047
IC / IB=10
--0.1 23 57
--1.0 23 57
--10 2
10
100
1000
5
7
2
3
5
7
2
3
hFE -- IC
ITR08425 0.1 23 57
1.0 23 57
10 2
10
100
1000
5
7
2
3
5
7
2
3
hFE -- IC
ITR08426
2SD1047
VCE=5V
2SB817
VCE= --5V
fT -- IC
ITR08423
1.0
10
5
7
2
3
5
2
3
--1.0--0.1 23 57 --10
23 57
2SB817
VCE= --5V
fT -- IC
ITR08424
1.0
10
5
7
2
3
5
2
3
1.00.1 23 57 10
23 57
2SD1047
VCE=5V
Gain-Bandwidth Product, fT– MHz
Collector Current, IC–A
Gain-Bandwidth Product, fT– MHz
Collector Current, IC–A
DC Current Gain, hFE
Collector Current, IC–A
DC Current Gain, hFE
Collector Current, IC–A
Output Capacitance, Cob – pF
Collector-to-Base Voltage, VCB -- V
Output Capacitance, Cob – pF
Collector-to-Base Voltage, VCB -- V
Collector Current, IC–A
Collector-to-Emitter
Saturation Voltage, VCE(sat) – V
Collector Current, IC–A
Collector-to-Emitter
Saturation Voltage, VCE(sat) – V
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of September, 2003. Specifications and information herein are
subject to change without notice.
2SB817/2SD1047
PS No.680–4/4
10 100
253757 2
A S O
0.1
1.0
5
7
3
2
10
5
7
3
2
2
ITR08433
10ms
100ms
1ms
DC operation
2SB817 / 2SD1047
(For PNP, minus sign is omitted.)
IC=12A
ICP=15A
5
--1.0
--10
5
2
3
5
7
2
3
7
--1.0--0.1 23 57 --10
23 57
VBE(sat) -- IC
ITR08431
2SB817
IC / IB=10
5
1.0
10
5
2
3
5
7
2
3
7
1.00.1 23 57 10
23 57
VBE(sat) -- IC
ITR08432
2SD1047
IC / IB=10
PC -- Tc
ITR08434
0 20 40 60 80 100 120 140 160
0
20
40
60
80
100
120
2SB817 / 2SD1047
Collector Current, IC–A
Base-to-Emitter
Saturation Voltage, VBE(sat) – V
Collector Current, IC–A
Base-to-Emitter
Saturation Voltage, VBE(sat) – V
Collector-to-Emitter Voltage, VCE –V
Collector Current, IC–A
Collector Dissipation, PC–W
Case Temperature, Tc – ˚C
