iy <i> 1N41480-1N4149_ -1N 44460 vy 1N 4447 -1N44480- 1N 4449 Silizium-Epitaxial-Planar-Dioden Silicon epitaxial planar diodes Anwendungen: Extrem schnelle Schalter Applications: Extrem fast switches Die elektrischen Daten entsprechen den Dioden: Electrically data resemble the diodes: 1N 4148 1N914 1N914A 1N 4446 1N 4149 1N916 1IN916A 1N 4447 1N 4449 1N916B 1N914B 1N 4448 Abmessungen in mm Dimensions in mm 5109 55 CATHODE Normgehause Case 54 A 2 DIN 41880 JEDEC DO 35 Gewicht - Weight max. 0,159 Absolute Grenzdaten Absolute maximum ratings Periodische Spitzensperrspannung UrRM 100 Vv Repetitive peak reverse voltage Sperrspannung UR 75 Vv Reverse voltage StoBdurchlaBstrom Surge forward current bo <iys Tesm 2000 mA Periodischer DurchlaBspitzenstrom TERM 450 mA Repetitive peak forward current DurchlaBstrom Ip 200 mA Forward current DurchlaBstrom, Mittelwert Average forward current Verlustleistung Power dissipation i= 4mm, t_ = 45C Py 440 mw tS 25C Py 500 mw Sperrschichttemperatur t 200 c Junction temperature Lagerungstemperaturbereich stg 65...+200 C Storage temperature range B 2/V.1.17/0474A2 2011N 4148 O- 1N 4149 1N 4447 - 1N 44480 - IN 4446 O - 1N 4449 Warmewlderstand Thermal resistance Sperrschicht-Umgebung Junction ambient i= 4mm, t, = konstant constant Kenngr6Ben Characteristics ti == 25 C, falls nicht anders angegeben unless otherwise specified DurchlaBspannung Forward voltage Ip= SmA 1N 4448 Ip= 10mA 1N 4148, 1N 4149 Ip= 20mA 1N 4446, 1 N 4447 Ip= 30mA 1N 4449 Ip = 100 mA 1N 4448 Sperrstrom Reverse current UR = 20V Up = 20V, t= 150C UR = 75 Vv Durchbruchspannung Breakdown voltage IR = 100pA Diodenkapazitat Diode capacitance Up = Oo, f= 1 MHz, UuF = 50mvV 1N 4148, 1N 4446, 1N 4448 1N 4149, 1N 4447, 1N 4449 Richtwirkungsgrad Rectification efficiency Uyp = 2V, f= 100 MHz Ruckwartserholzeit Reverse recovery time Ip = IR = 10 mA, ip =1mA Te = 10mA, Up = BV, ir = 1mA, Rt = 100Q *) AQL = 0,65%, **) AQL = 2,5% 202 Min. Typ. RinJa Ur*) 0,62 Ug*) Ug*) Ug") Ug*) TR") TpR**) VBR) *) 100 Ny 45 Max. 350 0,72 a a 25 50 oy C/W <<< << nA pA pF pF % ns ns48O:-1N4149_ -1N 44460 1N 41 1N 4447 1N 4448 : 1N 4449 f 1 1N4446 1N 4149 1N4447 525C 725C 100 mA 40 Streugrenze Streugrenze Scattering limit Scattering limit 1N4448 1N4449 1,=25C Streugrenze Scattering limit 0.1 0,4 06 203> 446 O 449 1N 4148 - 1N 4149 1N 4447 -1N 44480: { ak mak =z A. 100 nA 10 1 10 V 204