VCE IC = = 2500 V 1300 A IGBT Press pack 5SNA 1300H250003 PRELIMINARY * * * * * * * * Doc. No. 5SYA1514-03 Apr.01 Low on-state and forward voltage drop High Voltage, high current capability Short Circuit rated Highly rugged switching SOA High clamping force allowed (70 kN) Greater tolerance to uneven pressure( patented technology) Designed for series connection Explosion resistant package Maximum Rated Values Parameter Collector-Emitter Voltage (Tj = 25C, unless specified otherwise) Symbol VCES Conditions Rating VGE = 0 V, Ic = 10 mA 2500 V DC Collector Current IC Ths = 75 C 1300 A Peak Collector Current IC M Pulse: tp=1ms, Ths = 75 C 2600 A 20 V SwSOA IC = 2600 A, VCEM = 2500 V, VCC = 1500 V, VGE = 15 V, Tj =125 C SCSOA VCC = 1500 V, VCEM = 2500 V, tp = 10 s, VGE = 15 V, Tj = 125 C IF Ths = 75 C 1300 A Gate Emitter Voltage IGBT Switching SOA IGBT Short Circuit SOA DC Forward Current Peak Forward Current VGES IF M Pulse: tp = 1ms, Ths = 75 C ABB Semiconductors AG reserves the right to change specifications without notice. 2600 A 5SNA 1300H250003 IGBT Characteristic Values Parameter Collector-Emitter Saturation (Tj =25 C, unless other spec.) Symbol Conditions min. typ. max. Unit VCE(sat) IC = 1300 A, VGE = 15 V Voltage Tj = 25 C 2.20 2.60 V Tj = 125 C 2.70 3.20 V 20 40 mA 500 nA 8.5 V Collector-Emitter Leakage Current ICES VCE = 2500 V, VGE = 0 V, Tj = 125 C Gate-Emitter leakage Current IGES VCE = 0 V, V GE = 20 V, Tj = 125 C Gate-Emitter Threshold Voltage VGEth Total Gate Charge QG Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Cres Turn-On Delay Time td(on) Rise Time Turn-Off Delay Time Fall Time tr td(off) tf IC = 240 mA, VCE = VGE IC = 1300 A, VCE = 200 V, VGE = -15 to 15 V C 200 nF 20 nF 5 nF IC = 1300 A, VCC = 1250 V, Rgon = 6.8 , 1.4 s Tj = 125 C, VGE = 15 V 1.0 s IC = 1300 A, VCC = 1250 V, Rgoff = 3.9 , 1.8 s Tj = 125 C,VGE = 15 V 0.6 s 3.0 J 2.1 J VCE = 25 V, VGE = 0 V, f = 1MHz Eon Rgon = 6.8 Turn-off Switching Energy Eoff Rgoff = 3.9 Parameter VF Reverse Recovery Current Irrm Reverse Recovery Charge Qrr Reverse Recovery Time trr Reverse Recovery Energy Erec IC = 1300 A, Tj = 125 C, VCC = 1250 V, VGE = 15 V, inductive load (Tj = 25 C, unless other spec.) Symbol Forward Voltage 7.00 12.5 Turn-on Switching Energy Diode Characteristic Values 5.0 Conditions IF = 1300 A min. typ. max. Tj = 25 C 1.90 2.30 Tj = 125 C 1.80 2.20 IF = 1300 A, Rgon = 6.8 , VCC = 1250 V, VGE = 15 V IF = 1300 A, Tj = 125 C, VCC = 1250 V, Rgon = 6.8 Unit V 630 A 725 C 3 s 450 mJ ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1514-03 Apr.01 2 of 4 5SNA 1300H250003 Thermal Characteristics Parameter (Tj =25 C, unless other spec.) Symbol Conditions min. typ. max. Unit 0.010 K/W 0.020 K/W IGBT Thermal Resistance Junction. to Case RthJC IGBT Heatsink flatness : < 50 m Diode Thermal Resistance Junction to Case RthJC Diode Without step Equivalent IGBT Thermal Resistance case to heat sink RthCH IGBT 0.002 K/W Equivalent Diode Thermal Resistance case to heat sink RthCH Diode 0.004 K/W Roughness : < 6.3 m Junction Temperature Tj 5 125 C Storage Temperature Ttstg/Tcop 5 125 C Mechanical Properties Parameter Dimensions Symbol L* W* H Conditions Typical , see outline drawing min. typ. max. Unit 236 * 150 * 26 mm Clearance Distance DC acc. IEC 664-1 and prEN50124-1:1995 10 mm Surface Creepage Distance DSC acc. IEC 664-1 and prEN50124-1:1995 23 mm Mounting Force FM Weight 50 70 3 kN kg ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1514-03 Apr.01 3 of 4 5SNA 1300H250003 Electrical configuration Outline drawing 26 236 32 Gate 12 Emitter 26 150 Collector (*4) ABB Semiconductors reserves the right to change specifications without notice. ABB Semiconductors AG Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)62 888 6419 +41 (0)62 888 6306 Info@ch.abb.com www.abbsem.com Doc. No. 5SYA1514-03 Apr.01