ABB Semiconductors AG reserves the right to change specifications without notice.
VCE =2500 V
IC=1300 AIGBT Press pack
5SNA 1300H250003
PRELIMINARY
Doc. No. 5SYA1514-03 Apr.01
•
Low on-state and forward voltage
drop
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High Voltage, high current capability
•
Short Circuit rated
•
Highly rugged switching SOA
•
High clamping force allowed (70 kN)
•
Greater tolerance to uneven
pressure( patented technology)
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Designed for series connection
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Explosion resistant package
Maximum Rated Values (Tj = 25°C, unless specified otherwise)
Parameter Symbol Conditions Rating
Collector-Emitter Voltage VCES VGE = 0 V, Ic= 10 mA 2500 V
DC Collector Current ICThs = 75 °C 1300 A
Peak Collector Current ICM Pulse: tp=1ms, Ths = 75 °C 2600 A
Gate Emitter Voltage VGES ± 20 V
IGBT Switching SOA SwSOA IC = 2600 A, VCEM = 2500 V, VCC = 1500 V, VGE = ±15 V,
Tj =125 °C
IGBT Short Circuit SOA SCSOA VCC = 1500 V, V CEM = 2500 V, tp = 10 µs, VGE = ±15 V,
Tj = 125 °C
DC Forward Current IFThs = 75 °C 1300 A
Peak Forward Current IFM Pulse: tp = 1ms, Ths = 75 °C 2600 A
5SNA 1300H250003
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1514-03 Apr.01 2 of 4
IGBT Characteristic Values (Tj =25 °C, unless other spec.)
Parameter Symbol Conditions min. typ. max. Unit
Tj = 25 °C 2.20 2.60 VCollector-Emitter Saturation
Voltage VCE(sat) IC = 1300 A, VGE = 15 V Tj = 125 °C2.70 3.20 V
Collector-Emitter Leakage
Current ICES VCE = 2500 V, VGE = 0 V, Tj = 125 °C 20 40 mA
Gate-Emitter leakage Current IGES VCE = 0 V, VGE = ±20 V, Tj = 125 °C ±500 nA
Gate-Emitter Threshold Voltage VGEth IC = 240 mA, VCE = VGE 5.0 7.00 8.5 V
Total Gate Charge QGIC = 1300 A, VCE = 200 V, VGE = -15 to 15 V 12.5 µC
Input Capacitance Ciss 200 nF
Output Capacitance Coss 20 nF
Reverse Transfer Capacitance Cres
VCE = 25 V, VGE = 0 V, f = 1MHz
5nF
Turn-On Delay Time td(on) 1.4 µs
Rise Time tr
IC = 1300 A, VCC = 1250 V, Rgon = 6.8 Ω,
Tj = 125 °C, VGE = ±15 V 1.0 µs
Turn-Off Delay Time td(off) 1.8 µs
Fall Time tf
IC = 1300 A, VCC = 1250 V, Rgoff = 3.9 Ω,
Tj = 125 °C,VGE = ±15 V 0.6 µs
Turn-on Switching Energy Eon Rgon = 6.8 Ω3.0 J
Turn-off Switching Energy Eoff Rgoff = 3.9 Ω
IC = 1300 A, Tj = 125 °C,
VCC = 1250 V, VGE = ±15 V,
inductive load 2.1 J
Diode Characteristic Values (Tj = 25 °C, unless other spec.)
Parameter Symbol Conditions min. typ. max. Unit
Tj = 25 °C 1.90 2.30
Forward Voltage VFIF = 1300 A Tj = 125 °C 1.80 2.20 V
Reverse Recovery Current Irrm 630 A
Reverse Recovery Charge Qrr 725 µC
Reverse Recovery Time trr
IF = 1300 A, Rgon = 6.8 Ω, VCC = 1250 V,
VGE = ±15 V 3µs
Reverse Recovery Energy Erec IF = 1300 A, Tj = 125 °C, VCC = 1250 V,
Rgon = 6.8 Ω450 mJ
5SNA 1300H250003
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1514-03 Apr.01 3 of 4
Thermal Characteristics (Tj =25 °C, unless other spec.)
Parameter Symbol Conditions min. typ. max. Unit
IGBT Thermal Resistance
Junction. to Case RthJC IGBT 0.010 K/W
Diode Thermal Resistance
Junction to Case RthJC Diode 0.020 K/W
Equivalent IGBT Thermal
Resistance case to heat sink RthCH IGBT 0.002 K/W
Equivalent Diode Thermal
Resistance case to heat sink RthCH Diode
Heatsink flatness : < 50 µm
Roughness : < 6.3 µm
Without step
0.004 K/W
Junction Temperature Tj5 125 °C
Storage Temperature Ttstg/Tcop 5 125 °C
Mechanical Properties
Parameter Symbol Conditions min. typ. max. Unit
Dimensions L* W* H Typical , see outline drawing 236 * 150 * 26 mm
Clearance Distance DCacc. IEC 664-1 and prEN50124-1:1995 10 mm
Surface Creepage Distance DSC acc. IEC 664-1 and prEN50124-1:1995 23 mm
Mounting Force FM50 70 kN
Weight 3kg
5SNA 1300H250003
Electrical configuration
Outline drawing
1
5
0
236
32
26
12
26
Gate
Emitter
Collector ( 4)
*
ABB Semiconductors reserves the right to change specifications without notice.
ABB Semiconductors AG
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone +41 (0)62 888 6419
Fax +41 (0)62 888 6306
Email Info@ch.abb.com
Internet www.abbsem.com
Doc. No. 5SYA1514-03 Apr.01
