1 Publication Order Number :
VEC2315/D
© Semiconductor Components Industries, LLC, 2015
October 2015 - Rev. 1
www.onsemi.com
VEC2315
This Power MOSFET is produced using ON Semiconductor’s trench
technology, which is specifically designed to minimize gate charge and low
on resistance. This device is suitable for applications with low gate charge
driving or low on resistance requirements.
Features
Low On-Resistance
4V drive
Low-Profile Package
ESD Diode-Protected Gate
Pb-Free, Halogen Free and RoHS compliance
Typical Applications
Motor Driver
SPECIFICATIONS
ABSOLUTE MAXIMUM RATING at Ta = 25C (Note 1)
Parameter Symbol Value Unit
Drain to Source Voltage VDSS 60 V
Gate to Source Voltage VGSS 20 V
Drain Current (DC) ID 2.5 A
Drain Current (Pulse)
PW 10s, duty cycle 1% IDP 10 A
Power Dissipation
When mounted on ceramic substrate
(900mm2
0.8mm) 1unit
PD 0.9
W
Total Dissipation
When mounted on ceramic substrate
(900mm2
0.8mm)
PT 1.0 W
Junction Temperature Tj 150 C
Storage Temperature Tstg 55 to +150 C
Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE RATINGS
Parameter Symbol Value Unit
Junction to Ambient
RJA 138.8 C/W
When mounted on ceramic substrate
(900mm2
0.8mm) 1unit
876
5
1234
1 : Source1
2:Gate1
3 : Source
2
4:Gate2
5:Drain2
6:Drain2
7:Drain1
8:Drain1
UM
LOT No .
TL
Power MOSFET
–60V, 137mΩ, –2.5A, Dual P-Channel
VDSS R
DS(on) Max ID Max
60V
137mΩ@ 10V
2.5A
180mΩ@ 4.5V
194mΩ@ 4V
ELECTRICAL CONNECTION
P-Channel
PACKING TYPE : TL MARKING
ORDERING INFORMATION
See detailed ordering and shipping
information on page 5 of this data sheet.
VEC2315
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2
ELECTRICAL CHARACTERISTICS at Ta 25C (Note 2)
Parameter Symbol Conditions Value Unit
min typ max
Drain to Source Breakdown Voltage V(BR)DSS I
D=1mA, VGS=0V 60 V
Zero-Gate Voltage Drain Current IDSS V
DS=60V, VGS=0V 1 A
Gate to Source Leakage Current IGSS V
GS=16V, VDS=0V 10 A
Gate Threshold Voltage VGS(th) VDS=10V, ID=1mA 1.2 2.6 V
Forward Transconductance gFS V
DS=10V, ID=1.5A 3.9 S
Static Drain to Source On-State
Resistance
RDS(on)1 ID=1.5A, VGS=10V 105 137 m
RDS(on)2 ID=0.75A, VGS=4.5V 128 180
m
RDS(on)3 ID=0.75A, VGS=4V 138 194
m
Input Capacitance Ciss
VDS=20V, f=1MHz
420 pF
Output Capacitance Coss 54 pF
Reverse Transfer Capacitance Crss 44 pF
Turn-ON Delay Time td(on)
See specified Test Circuit
6.4 ns
Rise Time t
r
9.8 ns
Turn-OFF Delay Time td(off) 65 ns
Fall Time tf 36 ns
Total Gate Charge Qg
VDS=30V, VGS=10V, ID=2.5A
11 nC
Gate to Source Charge Qgs 1.4 nC
Gate to Drain “Miller” Charge Qgd 2 nC
Forward Diode Voltage VSD IS=2.5A, VGS=0V 0.83 1.2 V
Note 2 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted.
Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Switching Time Test Circuit
PW= 10s
D.C.≤1%
P.G 50
G
S
D
ID=--1.5A
R
L=20
VDD
=
--30 V
VOU
T
VIN
0V
--10V
VIN
VEC2315
VEC2315
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3
VEC2315
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4
VEC2315
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5
ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States
and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of
SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf . SCILLC reserves the right to make changes without
further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose,
nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including
without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can
and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are
not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or
sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers,
employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of,
directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was
negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject toall
applicable copyright laws and is not for resale in any manner.
PACKAGE DIMENSIONS
unit : mm
ORDERING INFORMATION
Device Marking Package Shipping (Qty / Packing)
VEC2315-TL-H
UM SOT-28FL / VEC8
(Pb-Free / Halogen Free) 3,000 / Tape & Reel
VEC2315-TL-W
† For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D. http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF
SOT-28FL / VEC8
CASE 318AH
ISSUE O
to
0.4
0.6
2.8
0.65
Note on usage : Since the VEC2315 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8
: Dr
a
in1
Recommended
Soldering Footprint
