BGA615L7E6327XTSA1 - INFINEON TECHNOLOGIES AG

BGA615L7

Silicon Germanium GPS Low Noise Amplifier

Data Sheet, Rev.1.3, February 2007

RF & Protection Devices

Edition 2007-02-12

Published by

Infineon Technologies AG

81726 München, Germany

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BGA615L7

Data Sheet 3 Rev.1.3, 2007-02-12

BGA615L7

Revision History: 2007-02-12, Rev.1.3

Previous Version: BGA615L7 V1.2

Page Subjects (major changes since last revision)

4added moisture sensitivity level

5added thermal resistance

6adjusted power gain settling times

adjusted inband and out of band compression points

12 updated recommended land pattern (added solder mask defined layout)

13 added reel diameter and pcs / reel information

Data Sheet 4 Rev.1.3, 2007-02-12

Silicon Germanium GPS Low Noise Amplifier

BGA615L7

Silicon Germanium GPS Low Noise Amplifier

Figure 1 Blockdiagram

Description

The BGA615L7 is a front-end low noise amplifier for Global Positioning System (GPS) applications. The LNA

provides 18 dB gain, 0.9 dB noise figure and high linearity performance, allowing it to be used as a first-stage LNA.

Current consumption is as low as 5.6 mA. The BGA615L7 is based upon Infineon Technologies‘ B7HF Silicon

Germanium technology. It operates over a 2.4 V to 3.2 V supply range.

Features

• High gain: 18 dB

• Low Noise Figure: 0.9 dB

• Power off function

• Operating frequency 1575 MHz

• Supply voltage: 2.4 V to 3.2 V

• Tiny PG-TSLP-7-1 leadless package

• B7HF Silicon Germanium technology

• RF output internally matched to 50 Ω

• Low external component count

• 1 kV HBM ESD protection (including AI-pin)

• Moisture sensitivity level: MSL 1

TSLP-7-1

Application

• 1575 MHz GPS

Type Package Marking Chip

BGA615L7 PG-TSLP-7-1 BS T0595

123

BIAS

GND

PONVCC

ESD

VSS

BGA615L7

Silicon Germanium GPS Low Noise Amplifier

Data Sheet 5 Rev.1.3, 2007-02-12

Pin Definition and Function

Maximum Ratings

Table 1 Pin Definition and Function

Pin No. Symbol Function

1AI LNA input

2BIAS DC bias

3GND RF ground

4PON Power on control

5VCC Supply control

6AO LNA output

7VSS DC ground

Table 2 Maximum Ratings

Parameter1)

1) All voltages refer to GND-Node.

Symbol Value Unit

Voltage at pin VCC VCC -0.3 ... 3.6 V

Voltage at pin AI VAI -0.3 ... 0.9 V

Voltage at pin BIAS VBIAS -0.3 ... 0.9 V

Voltage at pin AO VAO -0.3 ... VCC+ 0.3 V

Voltage at pin PON VPON -0.3 ... VCC+ 0.3 V

Voltage at pin VSS VSS -0.3 ... 0.3 V

Current into pin VCC ICC 10 mA

RF input power PIN 10 dBm

Total power dissipation Ptot 36 mW

Junction temperature TJ150 °C

Ambient temperature range TA-30 ... 85 °C

Storage temperature range TSTG -65 ... 150 °C

Thermal resistance junction soldering point Rth JS 240 K/W

ESD capability all pins (HBM: JESD22A-114) VESD 1000 V

Data Sheet 6 Rev.1.3, 2007-02-12

BGA615L7

Silicon Germanium GPS Low Noise Amplifier

Electrical Characteristics

Table 3 Electrical Characteristics1): TA = 25 °C, VCC = 2.8 V, VPON,ON = 2.8 V, VPON,OFF = 0 V, f = 1575 MHz

1) Measured on BGA615L7 application board including PCB losses (unless noted otherwise)

Parameter Symbol Values Unit Note / Test Condition

Min. Typ. Max.

Supply voltage VCC 2.4 2.8 3.2 V

Supply current ICC -5.6 -mA ON-mode

-0.2 3µAOFF-mode

Gain switch control voltage Vpon 1.5 -3.2 VON-mode

0 - 0.5 VOFF-mode

Gain switch control current Ipon -1.5 3µAON-mode

- 01µAOFF-mode

Insertion power gain |S21|2-18 -dB High-gain Mode

Noise figure2)

2) PCB losses subtracted

NF -0.9 -dB ZS = 50 Ω

Input return loss RLin -13 -dB

Output return loss RLout ->15 -dB

Reverse isolation 1/|S12|2-35 -dB

Power gain settling time3)

3) To within 1 dB of the final gain OFF- to ON-mode; to within 3 dB of the final gain ON- to OFF-mode

tS-20 -µsOFF- to ON-mode

-50 -µsON- to OFF-mode

Inband input 3rd order intercept

point

IIP3--1 -dBm f1 = 1575 MHz

f2 = f1 +/-1 MHz

Inband input 1 dB compression

point

IP1dB --14 -dBm

Out of band input 1 dB

compression point

IP1dB,900M --9 -dBm f = 806 MHz ... 928 MHz

Out of band input 1 dB

compression point

IP1dB,1650M --12 -dBm f = 1612 MHz ... 1710

MHz

Out of band input 1 dB

compression point

IP1dB,1900M --6 -dBm f = 1710 MHz ...1785

MHz

f =1850 MHz ...1909

MHz

Stability k-> 1.5 -f = 20 MHz ... 10 GHz

BGA615L7

Silicon Germanium GPS Low Noise Amplifier

Data Sheet 7 Rev.1.3, 2007-02-12

Typical Measurement Results ON Mode; TA = 25 °C

Gain |S21|2 = f( f )

VCC = 2.8 V

Noise Figure1) NF = f( f )

VCC = 2.8 V

1) PCB losses subtraced

Reverse Isolation 1/|S12|2 = f( f )

VCC = 2.8 V

Matching |S11|, |S22| = f( f )

VCC = 2.8 V

1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2

Frequency [GHz]

|S21|2 [dB]

−30°C

25°C

85°C

1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2

0.5

0.6

0.7

0.8

0.9

1.1

1.2

1.3

1.4

1.5

Frequency [GHz]

NF [dB]

1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2

−50

−48

−46

−44

−42

−40

−38

−36

−34

−32

−30

Frequency [GHz]

1/|S12|2 [dB]

1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2

−45

−40

−35

−30

−25

−20

−15

−10

−5

Frequency [GHz]

|S11|, |S22| [dB]

S11

S22

Data Sheet 8 Rev.1.3, 2007-02-12

BGA615L7

Silicon Germanium GPS Low Noise Amplifier

Typical Measurement Results ON Mode vs. Temperature

Power Gain |S21|2 = f(TA)

VCC = 2.8 V

Noise Figure1) NF = f(TA)

VCC = 2.8 V

1) PCB losses subtracted

Supply current ICC = f(TA)

VCC = 2.8 V

Third Order Input Intercept Point IIP3 = f(TA)

VCC = 2.8 V

−40 −20 0 20 40 60 80 100

15.5

16.5

17.5

18.5

19.5

TA [°C]

|S21|2 [dB]

−40 −20 0 20 40 60 80 100

0.5

0.6

0.7

0.8

0.9

1.1

1.2

1.3

1.4

1.5

TA [°C]

NF [dB]

−40 −20 0 20 40 60 80 100

4.5

4.7

4.9

5.1

5.3

5.5

5.7

5.9

6.1

6.3

6.5

TA [°C]

ICC [mA]

−40 −20 0 20 40 60 80 100

−10

−7.5

−5

−2.5

2.5

TA [°C]

IIP3 [dBm]

BGA615L7

Silicon Germanium GPS Low Noise Amplifier

Data Sheet 9 Rev.1.3, 2007-02-12

Typical Measurement Results ON Mode vs. Supply Voltage

Power Gain |S21| = f(VCC)

TA = 25 °C

Noise Figure1) NF = f(VCC)

TA = 25 °C

1) PCB losses subtracted

Supply current ICC = f(VCC)

TA = 25 °C

Third Order Input Intercept Point IIP3 = f(VCC)

TA = 25 °C

2.2 2.4 2.6 2.8 3 3.2 3.4

15.5

16.5

17.5

18.5

19.5

VCC [V]

|S21|2 [dB]

2.2 2.4 2.6 2.8 3 3.2 3.4

0.5

0.6

0.7

0.8

0.9

1.1

1.2

1.3

1.4

1.5

VCC [V]

NF [dB]

2.2 2.4 2.6 2.8 3 3.2 3.4

4.5

4.7

4.9

5.1

5.3

5.5

5.7

5.9

6.1

6.3

6.5

VCC [V]

ICC [mA]

2.2 2.4 2.6 2.8 3 3.2 3.4

−10

−7.5

−5

−2.5

2.5

VCC [V]

IIP3 [dBm]

Data Sheet 10 Rev.1.3, 2007-02-12

BGA615L7

Silicon Germanium GPS Low Noise Amplifier

PCB Configuration

Figure 2 Schematic of BGA615L7

Table 4 Bill of Materials

Name Value Package Manufacturer Function

C1 10 nF 0402 Various LF trap

C2 5 pF 0402 Various DC block

C3 10 pF 0402 Various Control voltage filtering

optional

C4 100 pF 0402 Various Supply filtering optional

C5 2.2 nF 0402 Various Supply filtering

L1 3.3 nH 0402 Various LF trap & input matching

L2 100 nH 0402 Various Biasing

N1 BGA615L7 PG-TSLP-7-1 Infineon SiGe LNA

RFin RFout

VCC

PON

C5C4

N1 BGA615L7

AI, 1

BIAS, 2

GND, 3

AO, 6

VCC, 5

PON, 4

VSS, 7

BGA615L7

Silicon Germanium GPS Low Noise Amplifier

Data Sheet 11 Rev.1.3, 2007-02-12

Application Board

Figure 3 Photograph of Application Board

Figure 4 Top View of Application Board

Figure 5 Detailed View of Application Board

Please note that RF-ground is connected via pin 3 only. In order to achieve the same performance as given in this

data sheet, it is necessary to provide good RF-grounding on this pin. Furthermore, the LF trap consisting of

inductor L1 and capacitor C1 should be placed as close as possible to pin 3.

Data Sheet 12 Rev.1.3, 2007-02-12

BGA615L7

Silicon Germanium GPS Low Noise Amplifier

Figure 6 Cross-Section View of Application Board

Figure 7 Recommended Land Pattern

A list of all application notes is available at http://goto.infineon.com/smallsignaldiscretes-appnotes.

Table 5 Application Notes

No. Description

AN091 The BGA615L7 Silicon-Germanium Low Noise Amplifier in GPS Applications

AN093 The BGA615L7 Silicon-Germanium Low Noise Amplifier with 0201 chip components

AN094 The BGA615L7 Silicon-Germanium Low Noise Amplifier for Low-Current GPS Applications

0.017 mm Copper

0.100 mm Prepreg FR4

0.035 mm Copper

0.460 mm FR4

0.100 mm Prepreg FR4

0.017 mm Copper

SMD

0.25

1.4

1.9

0.25

0.20.25

0.250.2

1.4

1.9

0.3 0.3

0.3

0.20.2

0.2

Stencil apertures

Copper Solder mask

R0.1

NSMD

0.25

1.4

1.9

0.25

0.20.25

0.250.2

1.4

1.9

0.3 0.3

0.3

0.20.2

0.2

Stencil apertures

Copper Solder mask

R0.1

BGA615L7

Silicon Germanium GPS Low Noise Amplifier

Data Sheet 13 Rev.1.3, 2007-02-12

Package Information

Figure 8 Package Dimensions

Figure 9 Tape & Reel Dimensions

Figure 10 Marking Layout

123

0.05 MAX.

+0.1

0.4

1) Dimension applies to plated terminal

±0.035

1.2

±0.05

1.3

±0.05

1.7

±0.05

6x0.2

±0.0351)

6x0.2±0.035 1)

±0.035

1.1 1)

456

123

Top view Bottom view

Pin 1 marking

1.45

2.18

0.5

Pin 1

marking

Reel diameter = 180 mm

7500 pcs / reel

0525

BGA615

Type code

2005, CW 25

Date code (YYWW)

Pin 1 marking

Laser marking