To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: http://www.renesas.com April 1st, 2010 Renesas Electronics Corporation Issued by: Renesas Electronics Corporation (http://www.renesas.com) Send any inquiries to http://www.renesas.com/inquiry. Notice 1. 2. 3. 4. 5. 6. 7. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. 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Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries. (Note 1) "Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majorityowned subsidiaries. (Note 2) "Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics. 2SK2586 Silicon N Channel MOS FET REJ03G1020-0500 (Previous: ADE-208-358C) Rev.5.00 Sep 07, 2005 Application High speed power switching Features * Low on-resistance RDS(on) = 7 m typ. * High speed switching * 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) D 1. Gate 2. Drain (Flange) 3. Source G 1 Rev.5.00 Sep 07, 2005 page 1 of 7 2 S 3 2SK2586 Absolute Maximum Ratings (Ta = 25C) Item Symbol VDSS VGSS ID*2 ID(pulse)*1 IDR*2 IAP*3 EAR*3 Pch*2 Tch Tstg Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1 % 2. Value at Tc = 25C 3. Value at Tch = 25C, Rg 50 Ratings 60 20 60 240 60 45 174 125 150 -55 to +150 Unit V V A A A A mJ W C C Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) Static drain to source on state resistance RDS(on) Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF Body to drain diode reverse recovery time Note: 4. Pulse Test Rev.5.00 Sep 07, 2005 page 2 of 7 trr Min 60 20 -- -- 1.0 -- -- 35 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 7 10 60 3550 1760 500 35 260 480 370 0.94 140 Max -- -- 10 100 2.0 10 16 -- -- -- -- -- -- -- -- -- -- Unit V V A A V m m S pF pF pF ns ns ns ns V ns Test Conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = 60 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 30 A, VGS = 10 V*4 ID = 30 A, VGS = 4 V*4 ID = 30 A, VDS = 10 V*4 VDS = 10 V, VGS = 0, f = 1 MHz ID = 30 A, VGS = 10 V, RL = 1.0 IF = 60 A, VGS = 0 IF = 60 A, VGS = 0 diF / dt = 50 A / s 2SK2586 Main Characteristics Maximum Safe Operation Area Power vs. Temperature Derating 500 20 10 sh ot ) c = 5 (1 (T 25 Operation in this area is limited by RDS(on) m s n 10 m s tio ra C 2 ) 50 100 150 0.5 0.1 200 3 1 10 30 100 Typical Output Characteristics Typical Transfer Characteristics 10 V 6 V 100 Pulse Test 4V 80 3.5 V 60 3V 40 20 VGS = 2.5 V 2 4 6 8 VDS = 10 V Pulse Test 80 60 40 25C Tc = 75C 20 -25C 0 10 1 2 3 4 5 Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current Pulse Test 0.8 0.6 ID = 50 A 0.4 0.2 20 A 10 A 2 4 6 8 10 Gate to Source Voltage VGS (V) Rev.5.00 Sep 07, 2005 page 3 of 7 Static Drain to Source on State Resistance RDS (on) () Drain to Source Voltage VDS (V) 1.0 0 0.3 Drain to Source Voltage VDS (V) 5V 0 Ta = 25C Case Temperature TC (C) Drain Current ID (A) 100 Drain Current ID (A) 1 = s s 1 0 Drain to Source Saturation Voltage VDS (on) (V) PW 50 pe 50 100 O 100 0 C Drain Current ID (A) 150 10 10 200 D Channel Dissipation Pch (W) 200 0.5 Pulse Test 0.2 0.1 0.05 0.02 VGS = 4 V 0.01 0.005 10 V 0.002 0.001 0.0005 1 3 10 30 100 300 Drain Current ID (A) 1000 Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance yfs (S) Forward Transfer Admittance vs. Drain Current 0.04 Pulse Test 0.032 0.024 ID = 50 A 10, 20 A 0.016 VGS = 4 V 0.008 10, 20, 50 A 10 V 0 -40 0 40 80 120 160 500 200 100 50 5 1 0.5 0.1 0.3 1 3 10 30 Drain Current ID (A) Body to Drain Diode Reverse Recovery Time Typical Capacitance vs. Drain to Source Voltage Capacitance C (pF) 5000 1000 500 200 100 50 20 0.3 1 3 10 30 100 Ciss 2000 Coss 1000 500 Crss 200 di / dt = 50 A / s VGS = 0, Ta = 25C VGS = 0 f = 1 MHz 100 100 0 10 20 30 40 50 Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics Switching Characteristics 80 16 VDD = 10 V 25 V 50 V VDS 12 VGS 40 20 4 VDD = 50 V 25 V 10 V 40 80 120 160 Gate Charge Qg (nc) Rev.5.00 Sep 07, 2005 page 4 of 7 8 0 200 5000 2000 Switching Time t (ns) 20 ID = 50 A 0 75C 2 2000 60 25C 10 10000 100 Tc = -25C 20 5000 10 5 0.1 VDS = 10 V Pulse Test Case Temperature TC (C) Gate to Source Voltage VGS (V) Drain to Source Voltage VDS (V) Reverse Recovery Time t rr (ns) Static Drain to Source on State Resistance RDS (on) () 2SK2586 1000 td(off) 500 tf 200 tr 100 td(on) 50 20 VGS = 10 V, VDD = 30 V PW = 5 s, duty < 1 % 10 5 0.1 0.3 1 3 10 30 Drain Current ID (A) 100 2SK2586 Repetitive Avalanche Energy EAR (mJ) Reverse Drain Current vs. Source to Drain Voltage Reverse Drain Current IDR (A) 100 Pulse Test 80 10 V 60 5V VGS = 0, -5 V 40 20 0 0.4 0.8 1.2 1.6 Source to Drain Voltage 2.0 Maximum Avalanche Energy vs. Channel Temperature Derating 200 IAP = 45 A VDD = 25 V duty < 0.1 % Rg > 50 160 120 80 40 0 25 50 75 100 125 150 Channel Temperature Tch (C) VSD (V) Normalized Transient Thermal Impedance s (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 Tc = 25C 1 D=1 0.5 0.3 0.2 0.1 ch - c(t) = s (t) * ch - c ch - c = 1.0C/W, Tc = 25C 0.1 0.05 PDM 0.02 1 lse 0.0 t pu o h 1s 0.03 0.01 10 D= PW T PW T 100 1m 10 m Pulse Width 100 m 1 10 PW (S) Avalanche Test Circuit and Waveform VDS Monitor EAR = L IAP Monitor Rg D. U. T 1 * L * IAP2* 2 V(BR)DSS VDS VDD 50 0 Rev.5.00 Sep 07, 2005 page 5 of 7 VDSS - VDD IAP ID Vin 15 V VDSS VDD 2SK2586 Switching Time Test Circuit Waveform Vout Monitor Vin Monitor 90% D.U.T. RL Vin Vout Vin 10 V 50 10% 10% VDD = 30 V 90% td(on) Rev.5.00 Sep 07, 2005 page 6 of 7 10% tr 90% td(off) tf 2SK2586 Package Dimensions JEITA Package Code RENESAS Code Package Name MASS[Typ.] SC-65 PRSS0004ZE-A TO-3P / TO-3PV 5.0g 4.8 0.2 1.5 0.3 19.9 0.2 2.0 14.9 0.2 0.5 1.0 3.2 0.2 Unit: mm 5.0 0.3 15.6 0.3 1.6 2.0 1.4 Max 18.0 0.5 2.8 1.0 0.2 3.6 0.6 0.2 0.9 1.0 5.45 0.5 5.45 0.5 Ordering Information Part Name 2SK2586-E Quantity 30 pcs Shipping Container Plastic magazine Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.5.00 Sep 07, 2005 page 7 of 7 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. 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Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. 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