J/SST174/175/176/177 Series
Vishay Siliconix
Document Number: 70257
S-04030—Rev. E, 04-Jun-01 www.vishay.com
9-1
P-Channel JFETs
J174 SST174
J175 SST175
J176 SST176
J177 SST177
PRODUCT SUMMARY
Part Number VGS(off) (V) rDS(on) Max (W)ID(off) Typ (pA) tON Typ (ns)
J/SST174 5 to 10 85 –10 25
J/SST175 3 to 6 125 –10 25
J/SST176 1 to 4 250 –10 25
J/SST177 0.8 to 2.25 300 –10 25
FEATURES BENEFITS APPLICATIONS
DLow On-Resistance: J174 <85 W
DFast Switching—tON: 25 ns
DLow Leakage: –10 pA
DLow Capacitance: 5 pF
DLow Insertion Loss
DLow Error Voltage
DHigh-Speed Analog Circuit Performance
DNegligible “Off-Error,” Excellent Accuracy
DGood Frequency Response
DEliminates Additional Buffering
DAnalog Switches
DChoppers
DSample-and-Hold
DNormally “On” Switches
DCurrent Limiters
DESCRIPTION
The J/SST174 series consists of p-channel analog switches
designed to provide low on-resistance and fast switching. This
series simplifies series-shunt switching applications when
combined with the Siliconix J/SST111 series.
The TO-226AA (TO-92) plastic package provides a low-cost
option, while the TO-236 (SOT-23) package provides
surface-mount capability. Both the J and SST series are
available in tape-and-reel for automated assembly (see
Packaging Information).
D
S
G
TO-236
(SOT-23)
Top View
2
3
1
TO-226AA
(TO-92)
Top View
D
S
G
1
2
3
*Marking Code for TO-236
SST174 (S4)*
SST175 (S5)*
SST176 (S6)*
SST177 (S7)*
J174
J175
J176
J177
For applications information see AN104.
J/SST174/175/176/177 Series
Vishay Siliconix
www.vishay.com
9-2 Document Number: 70257
S-04030—Rev. E, 04-Jun-01
ABSOLUTE MAXIMUM RATINGS
Gate-Drain Voltage 30 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate-Source Voltage 30 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate Current –50 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature –55 to 150_C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature –55 to 150_C. . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (1/16” from case for 10 sec.) 300_C. . . . . . . . . . . . . . . . . . .
Power Dissipationa350 mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Notes
a. Derate 2.8 mW/_C above 25_C
SPECIFICATIONS FOR J/SST174 AND J/SST175 (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
J/SST174 J/SST175
Parameter Symbol Test Conditions TypaMin Max Min Max Unit
Static
Gate-Source Breakdown Voltage V(BR)GSS IG = 1 mA , VDS = 0 V 45 30 30
Gate-Source Cutoff Voltage VGS(off) VDS = –15 V, ID = –10 nA 5 10 3 6 V
Saturation Drain CurrentbIDSS VDS = –15 V, VGS = 0 V –20 –135 –7–70 mA
VGS = 20 V, VDS = 0 V 0.01 1 1
Gate Reverse Current IGSS TA = 125_C5
Gate Operating Current IGVDG = –15 V, ID = –1 mA 0.01 nA
VDS = –15 V, VGS = 10 V –0.01 –1–1
Drain Cutoff Current ID(off) TA = 125_C–5
Drain-Source On-Resistance rDS(on) VGS = 0 V, VDS = –0.1 V 85 125 W
Gate-Source Forward Voltage VGS(F) IG = –1 mA , VDS = 0 V –0.7 V
Dynamic
Common-Source
Forward T ransconductance gfs VDS = –15 V, ID = –1 mA 4.5 mS
Common-Source
Output Conductance gos
VDS = –15 V, ID = –1 mA
f = 1 kHz 20 mS
Drain-Source On-Resistance rds(on) VGS = 0 V, ID = 0 mA , f = 1 kHz 85 125 W
Common-Source Input Capacitance Ciss VDS = 0 V, VGS = 0 V, f = 1 MHz 20
Common-Source
Reverse Transfer Capacitance Crss VDS = 0 V, VGS = 10 V
f = 1 MHz 5pF
Equivalent Input Noise Voltage enVDG = –10 V, ID = –1 mA
f = 1 kHz 20 nV⁄
√Hz
Switching
td(on) 10
T urn-On Time trVGS(L) = 0 V, VGS(H) = 10 V 15
td(off)
GS(L) GS(H)
See Switching Circuit 10 ns
Turn-Off Time tf20
Notes
a. Typical values are for DESIGN AID ONL Y, not guaranteed nor subject to production testing. PSCIA
b. Pulse test: PW v300 ms duty cycle v3%.
J/SST174/175/176/177 Series
Vishay Siliconix
Document Number: 70257
S-04030—Rev. E, 04-Jun-01 www.vishay.com
9-3
SPECIFICATIONS FOR J/SST176 AND J/SST177 (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
J/SST176 J/SST177
Parameter Symbol Test Conditions TypaMin Max Min Max Unit
Static
Gate-Source Breakdown Voltage V(BR)GSS IG = 1 mA , VDS = 0 V 45 30 30
Gate-Source Cutoff Voltage VGS(off) VDS = –15 V, ID = –10 nA 1 4 0.8 2.25 V
Saturation Drain CurrentbIDSS VDS = –15 V, VGS = 0 V –2–35 –1.5 –20 mA
VGS = 20 V, VDS = 0 V 0.01 1 1
Gate Reverse Current IGSS TA = 125_C5
Gate Operating Current IGVDG = –15 V, ID = –1 mA 0.01 nA
VDS = –15 V, VGS = 10 V –0.01 –1–1
Drain Cutoff Current ID(off) TA = 125_C–5
Drain-Source On-Resistance rDS(on) VGS = 0 V, VDS = –0.1 V 250 300 W
Gate-Source Forward Voltage VGS(F) IG = –1 mA , VDS = 0 V –0.7 V
Dynamic
Common-Source
Forward T ransconductance gfs VDS = –15 V, ID = –1 mA 4.5 mS
Common-Source Output Conductance gos f = 1 kHz 20 mS
Drain-Source On-Resistance rds(on) VGS = 0 V, ID = 0 mA , f = 1 kHz 250 300 W
Common-Source Input Capacitance Ciss VDS = 0 V, VGS = 0 V, f = 1 MHz 20
Common-Source
Reverse Transfer Capacitance Crss VDS = 0 V, VGS = 10 V
f = 1 MHz 5pF
Equivalent Input Noise Voltage enVDG = –10 V, ID = –1 mA
f = 1 kHz 20 nV⁄
√Hz
Switching
td(on) 10
T urn-On Time trVGS(L) = 0 V, VGS(H) = 10 V 15
td(off)
GS(L) GS(H)
See Switching Circuit 10 ns
Turn-Off Time tf20
Notes
a. Typical values are for DESIGN AID ONL Y, not guaranteed nor subject to production testing. PSCIA
b. Pulse test: PW v300 ms duty cycle v3%.
J/SST174/175/176/177 Series
Vishay Siliconix
www.vishay.com
9-4 Document Number: 70257
S-04030—Rev. E, 04-Jun-01
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
200
0681042
160
0
–100
–80
–60
–40
–20
0
On-Resistance and Drain Current
vs. Gate-Source Cutoff Voltage
VGS(off) – Gate-Source Cutoff Voltage (V)
rDS @ ID = –1 mA, VGS = 0 V
IDSS @ VDS = –15 V, VGS = 0 V
IDSS
rDS
120
80
40
18
0
15
12
9
6
368102
250
200
150
100
50
0
Forward Transconductance and Output Conductance
vs. Gate-Source Cutoff Voltage
VGS(off) – Gate-Source Cutoff Voltage (V)
gfs and gos @ VDS = –15 V
VGS = 0 V, f = 1 kHz
gfs
gos
4
Output Characteristics
– Drain Current (mA)
ID
VDS – Drain-Source Voltage (V)
1.0 V
0.5 V
1.5 V
2.0 V
–25
0–12 –16 –20
–20
–15
–10
–5
0
–8–4
VGS(off) = 3 V VGS = 0 V
Output Characteristics
– Drain Current (mA)
ID
VDS – Drain-Source Voltage (V)
1.5 V
2.0 V
–2
0–0.3 –0.4 –0.5
–1.6
–1.2
–0.8
–0.4
0
–0.2–0.1
VGS(off) = 3 V
VGS = 0 V
250
200
150
100
50
0–1–10 –100
On-Resistance vs. Drain Current
ID – Drain Current (mA)
TA = 25_C
VGS(off) = 1.5 V
3 V
5 V
300
–55 25 125
0
–15 85
On-Resistance vs. Temperature
TA – Temperature (_C)
VGS(off) = 1.5 V
3 V 5 V
ID = –1 mA
rDS changes X 0.7%/_C
240
180
120
60
–35 5 45 65 105
1.0 V
0.5 V
S)gos – Output Conductance ( m
rDS(on) – Drain-Source On-Resistance ( Ω )
IDSS – Saturation Drain Current (mA)
gfs – Forward Transconductance (mS)rDS(on) – Drain-Source On-Resistance ( Ω )rDS(on) – Drain-Source On-Resistance ( Ω )
J/SST174/175/176/177 Series
Vishay Siliconix
Document Number: 70257
S-04030—Rev. E, 04-Jun-01 www.vishay.com
9-5
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
20
0–9–12–6–3–15
16
12
8
4
0
Turn-On Switching Turn-Off Switching
VGS(off) – Gate-Source Cutoff Voltage (V) ID – Drain Current (mA)
tr approximately independent of ID
VDD = –10 V, RG = 220 W
VGS(H) = 10 V, VGS(L) = 0 V
tON @ ID = –10 mA td(off) VGS(off) = 1.5 V
tf VGS(off) = 1.5 V
tON @ ID = –5 mA
VDD = –10 V, VGS(H) = 10 V, VGS(L) = 0 V
50
05
40
20
10
0
30
1234
tr @ ID = –5 mA
5 V
5 V
Switching T ime (ns)
Switching T ime (ns)
Capacitance vs. Gate-Source Voltage Gate Leakage Current
Capacitance (pF)
VGS – Gate-Source Voltage (V) VDG – Drain-Gate Voltage (V)
VDS = 0 V
f = 1 MHz
Ciss
Crss
10 nA
100 pA
100 nA
1 nA
– Gate Leakage
IG
10 pA
1 pA
0.1 pA
30
01216820
24
12
6
00–40–20–10 –50
18
4–30
10 100 1 k 100 k10 k
100
10
1
Transfer Characteristics Noise Voltage vs. Frequency
f – Frequency (Hz)
TA = –55_C
125_CVDS = –10 V
ID = –0.1 mA
–1 mA
– Drain Current (mA)
ID
VGS – Gate-Source Voltage (V)
–40
0345
–32
–16
–8
0
–24
12
TA = 125_C
TA = 25_C
–10 mA
IGSS @ 125_C
IGSS @ 25_C
–10 mA
VDS = –15 VVGS(off) = 3 V
25_C
–1 mA
ID = –1 mA
en – Noise Voltage nV / Hz
7.5 kW
51 W
1.2 kW
51 W
51 W
1.2 kW
0.1 mF
Sampling
Scope
VGG VDD
RG
VGS(H)
VGS(L)
RL
J/SST174/175/176/177 Series
Vishay Siliconix
www.vishay.com
9-6 Document Number: 70257
S-04030—Rev. E, 04-Jun-01
SWITCHING TIME TEST CIRCUIT
174 175 176 177
VDD –10 V –6 V –6 V –6 V
VGG 20 V 12 V 8 V 5 V
RL*560 W750 W1800 W5600 W
RG*100 W220 W390 W390 W
ID(on) –15 mA –7 mA –3 mA –1 mA
*Non-inductive
INPUT PULSE SAMPLING SCOPE
Rise Time < 1 ns
Fall Time < 1 ns
Pulse Width 100 ns
PRF 1 MHz
Rise Time 0.4 ns
Input Resistance 10 MW
Input Capacitance 1.5 pF
See Typical Characteristics curves for changes.
