Rev. 2.00, 03/05, page 803 of 884
21.3.3 Bus Timing
Table 21.7 PLL-On Bus Ti ming [Modes 0 and 4] (1)
Conditions: VCC = PLLVCC = 3.3 V ± 0.3 V, PVCC = 5.0 V ± 0.5 V/3.3 V ± 0.3 V, PVCC ≥ VCC,
VSS = PVSS = PLLVSS = 0 V, Ta = –20 to +75°C
Item Symbol Min Max Unit Figure
Address del a y time tAD 114ns
21.12, 13, 16, 17, 19, 21, 23, 25 to
29, 31 to 35, 38 to 41, 43 to 45
BS
delay time tBSD —15 ns 21.12, 13, 16, 17, 19, 21, 23, 25,
26, 29, 31, 32, 34, 35, 40, 43 to 45
CS
delay time 1 tCSD1 1 14 ns 21.12, 13, 16, 17, 19, 21, 23 to 26,
29, 31 to 35, 40, 42, 43
CS
delay time 2 tCSD2 —14 ns 21.12, 13, 34, 35, 40, 43
Read/write delay time tRWD 1 14 ns 21.12, 13, 16, 17, 19, 21 to 23, 25,
26, 29 to 35, 40, 43 to 45
Read strobe delay time 1 tRSD1 —14 ns 21.12, 13, 16, 17, 23, 31, 34, 35,
38, 40, 41, 43 to 45
Read data setup time 1 tRDS1 8 — ns 21.12, 34, 38, 43 to 45
Read data setup time 2 (EDO) tRDS2 8 — ns 21.40, 41
Read data setup time 3 (SDRAM) tRDS3 6.5 —ns 21.16, 17
Read data hold time 2 tRDH2 0 — ns 21.12, 43
Read data hold time 4 (SDRAM) tRDH4 2 — ns 21.16, 17
Read data hold time 5 (DRAM) tRDH5 0 — ns 21.34, 38
Read data hold time 6 (EDO) tRDH6 3 — ns 21.40, 41
Read data hold time 7 (EDO) tRDH7 1 — ns 21.40
Read data hold time 8
(interrupt vector) tRDH8 2 — ns 21.44, 45
Write enab le de lay time 1 tWED1 —14 ns 21.12, 13
Write data delay time 1
(except tEcyc:tPcyc = 1:1) tWDD1 —22 ns 21.13, 23, 25, 27, 35, 39
Write data delay time 2
(tEcyc:tPcyc = 1:1) tWDD2 —12 ns 21.26, 28
Write data hold time 1 tWDH1 2 — ns 21.13, 23, 25 to 28, 35, 39
Data buffer on time tDON —15 ns 21.13, 23, 25, 26, 35
Data buffer off time tDOF —15 ns 21.13, 23, 25, 26, 35