TIC225 SERIES SILICON TRIACS Sensitive Gate Triacs 8 A RMS, 70 A Peak Glass Passivated Wafer MT1 1 400 V to 800 V Off-State Voltage MT2 2 Max IGT of 5 mA (Quadrant 1) G 3 TO-220 PACKAGE (TOP VIEW) Pin 2 is in electrical contact with the mounting base. MDC2ACA absolute maximum ratings over operating case temperature (unless otherwise noted) RATING SYMBOL VALUE TIC225D E T E L O S B O TIC225M Repetitive peak off-state voltage (see Note 1) TIC225S 600 VDRM V 700 TIC225N Full-cycle RMS on-state current at (or below) 70C case temperature (see Note 2) UNIT 400 800 IT(RMS) 8 Peak on-state surge current full-sine-wave at (or below) 25C case temperature (see Note 3) ITSM 70 A Peak gate current IGM 1 A W Peak gate power dissipation at (or below) 85C case temperature (pulse width 200 s) A PGM 2.2 PG(AV) 0.9 W Operating case temperature range TC -40 to +110 C Storage temperature range Tstg -40 to +125 C TL 230 C Average gate power dissipation at (or below) 85C case temperature (see Note 4) Lead temperature 1.6 mm from case for 10 seconds NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1. 2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 70C derate linearly to 110C case temperature at the rate of 200 mA/C. 3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of on-state current. Surge may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost. 4. This value applies for a maximum averaging time of 20 ms. electrical characteristics at 25C case temperature (unless otherwise noted ) PARAMETER IDRM IGT Repetitive peak off-state current TEST CONDITIONS VD = rated VDRM IG = 0 MIN TYP TC = 110C MAX UNIT 2 mA Vsupply = +12 V RL = 10 tp(g) > 20 s 2.3 5 Gate trigger Vsupply = +12 V RL = 10 tp(g) > 20 s -3.8 -20 current Vsupply = -12 V RL = 10 tp(g) > 20 s -3 -10 Vsupply = -12 V RL = 10 tp(g) > 20 s 6 30 mA All voltages are with respect to Main Terminal 1. JULY 1975 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 TIC225 SERIES SILICON TRIACS electrical characteristics at 25C case temperature (unless otherwise noted) (continued) PARAMETER VGT VT TYP MAX 0.7 2 tp(g) > 20 s -0.7 -2 tp(g) > 20 s -0.7 -2 tp(g) > 20 s Gate trigger Vsupply = +12 V RL = 10 voltage Vsupply = -12 V RL = 10 Vsupply = -12 V RL = 10 tp(g) > 20 s 0.8 2 On-state voltage IT = 12 A IG = 50 mA (see Note 5) 1.5 2.1 Vsupply = +12 V IG = 0 Init' IT = 100 mA 2.3 20 Vsupply = -12 V IG = 0 Init' IT = -100 mA -1.6 -20 Holding current IL Latching current dv/dt(c) MIN RL = 10 IH dv/dt TEST CONDITIONS Vsupply = +12 V Critical rate of rise of off-state voltage Critical rise of commutation voltage Vsupply = +12 V Vsupply = -12 V 30 (see Note 6) VDRM = Rated VDRM IG = 0 VDRM = Rated VDRM ITRM = 12 A -30 TC = 110C TC = 70C 1 UNIT V V mA mA 20 V/s 4.5 V/s (see Figure 6) All voltages are with respect to Main Terminal 1. NOTES: 5. This parameter must be measured using pulse techniques, t p = 1 ms, duty cycle 2 %. Voltage-sensing contacts separate from the current carrying contacts are located within 3.2 mm from the device body. 6. The triacs are triggered by a 15-V (open-circuit amplitude) pulse supplied by a generator with the following characteristics: R G = 100 , tp(g) = 20 s, tr = 15 ns, f = 1 kHz thermal characteristics E T E L O S B O PARAMETER RJC Junction to case thermal resistance RJA Junction to free air thermal resistance MIN 2 TYP MAX UNIT 2.5 C/W 62.5 C/W JULY 1975 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. TIC225 SERIES SILICON TRIACS TYPICAL CHARACTERISTICS GATE TRIGGER VOLTAGE vs GATE TRIGGER CURRENT vs CASE TEMPERATURE 1000 100 + + - Vsupply IGTM VAA = 12 V + + RL = 10 tp(g) = 20 s 10 1 0*1 -60 -40 -20 0 + + - + - - + VAA = 12 V } RL = 10 tp(g) = 20 s 1 E T E L O S B O 20 40 60 80 100 0*1 -60 120 -40 -20 0 Figure 1. 40 60 80 100 120 Figure 2. HOLDING CURRENT vs LATCHING CURRENT vs CASE TEMPERATURE CASE TEMPERATURE TC07AD 1000 Vsupply Vsupply IGTM + - + + - + + 0 20 IL - Latching Current - mA IH - Holding Current - mA 20 TC - Case Temperature - C TC - Case Temperature - C 100 TC07AB 10 VGT - Gate Trigger Voltage - V IGT - Gate Trigger Current - mA Vsupply IGTM CASE TEMPERATURE TC07AA 10 1 100 TC07AE VAA = 12 V 10 1 VAA = 12 V IG = 0 Initiating ITM = 100 mA 0*1 -60 -40 -20 0 20 40 60 80 100 120 TC - Case Temperature - C Figure 3. 0.1 -60 -40 -20 40 60 80 100 120 TC - Case Temperature - C Figure 4. JULY 1975 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 3 TIC225 SERIES SILICON TRIACS THERMAL INFORMATION MAXIMUM RMS ON-STATE CURRENT vs CASE TEMPERATURE TI07AB IT(Rms) - Maximum On-State Current - A 10 9 8 7 6 5 4 3 E T E L O S B O 2 1 0 0 25 50 75 100 125 150 TC - Case Temperature - C Figure 5. PARAMETER MEASUREMENT INFORMATION VAC L1 VAC ITRM IMT2 IMT2 C1 50 Hz VMT2 VDRM DUT RG See Note A R1 VMT2 10% IG dv/dt 63% IG NOTE A: The gate-current pulse is furnished by a trigger circuit which presents essentially an open circuit between pulses. The pulse is timed so that the off-state-voltage duration is approximately 800 s. PMC2AA Figure 6. 4 JULY 1975 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.