S9295 series is a thermoelectrically cooled Si photodiode with preamp developed for low-light-level detection. A large area photodiode, op amp,
TE-cooler and feedback resistor (10 GΩ) are integrated into a single package. A thermistor is also included in the same package for temperature
control so that the photodiode and I-V conversion circuit can be cooled for stable operation. S9295 series also features low noise and low NEP,
and is especially suitable for NOx detection. The active area of the photodiode is internally connected to the GND terminal making it highly
resistant to EMC noise.
Features
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Large active area: 10 × 10 mm
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UV to NIR Si photodiode optimized for precision photometry
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Compact hermetic package with sapphire window
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High precision FET input operational amplifier
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High gain: Rf=10 GΩ
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Low noise and NEP
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High cooling efficiency
S9295 : ∆T=50 ˚C
S9295-01: ∆T=30 ˚C
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High stability with thermistor
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Highly resistant to EMC noise
Applications
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NOx detection
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Low-light-level measurement, etc.
PHOTODIODE
Si photodiode with preamp
Large area photodiode integrated with op amp and TE-cooler
S9295 series
S9295 series may be damaged by Electro Static Discharge, etc. Please see Precautions for use in the last page.
■ Absolute maximum ratings ■ Recommended operating conditions
Parameter Symbol Value Parameter Symbol Value
Supply voltage (preamp) Vcc ±20 V Supply voltage (preamp) Vcc ±5 to ±15 V
Operating temperature Topr -30 to +60 °CTE-cooler current Ite 0.8 A Max.
Storage temperature Tstg -40 to +80 °CThermistor power dissipation Pth 0.03 mW Max.
TE-cooler allowable voltage *1Vte 5 V *2Load resistance RL100 kΩ Min.
TE-cooler allowable current Ite 1 A
Thermistor power dissipation Pth 0.2 mW
*1: Ripple Max.: 10 %
*2: S9295-01: 3.7 V
■ Electrical and optical characteristics (Typ. Vcc=±15 V, RL=1 MΩ)
S9295 S9295-01
Parameter Symbol Condition T= -25 °CT= -5 °CUnit
Spectral response range λ190 to 1100 nm
Peak sensitivity wavelength λp960 nm
Feedback resistance (built-in) *3Rf 10 GΩ
λ=200 nm 0.9 0.9
Photo sensitivity Sλ=λp5.1 5.1 V/nW
Output noise voltage Vn
Dark state, f=10 Hz
20 25 µVrms/Hz1/2
Noise equivalent power NEP λ=λp, f=10 Hz 4 5 fW/Hz1/2
Output offset voltage Vos Dark state ±2 ±2 mV
Cut-off frequency fc -3 dB 190 180 Hz
Output voltage swing Vo 13 V
Supply current Icc Dark state 0.3 mA
Thermistor resistance Rth 86 30 kΩ
*3: Custom devices are available with different Rf values and/or internal Cf, etc.
1
Si photodiode with preamp
S9295 series
0
200
Wavelength (nm)
Photo sensitivity (V/nW)
400 600 800 1000
(Typ. Vcc=±15 V)
1
2
3
4
5
6
S9295 (T= -25 ˚C)
S9295-01 (T= -5 ˚C)
■ Spectral response
KSPDB0228EA
-3010
Frequency (Hz)
Relative output (dB)
100 100001000
(Typ. Vcc=±15 V)
-20
-10
10
0
S9295
(T= -25 ˚C)
S9295-01
(T= -5 ˚C)
■ F requency response
KSPDB0229EA
1001
Frequency (Hz)
NEP (fW/Hz1/2)
10 100 100001000
(Typ. Vcc=±15 V)
101
103
102
S9295-01
(T= -5 ˚C)
S9295
(T= -25 ˚C)
■ NEP vs. frequency
KSPDB0230EB
10
-7
10
-6
1
Frequency (Hz)
Output noise voltage (Vrms/Hz1/2)
10 100 100001000
(Typ. Vcc=±15 V)
10
-5
10
-3
10
-4
S9295-01
(T= -5 ˚C)
S9295
(T= -25 ˚C)
■ Output noise voltage vs. frequency
KSPDB0231EA
-300
TE-cooler current Ite (A)
Element temperature T (˚C)
TE-cooler voltage Vte (V)
0.40.2 0.6 1.00.8
(Typ. Ta=25 ˚C)
-10
30
10
20
0
-20
0
2
6
4
5
3
1
T vs. Ite
Vte vs. Ite
■ Element temperature vs . TE-cooler current
KSPDB0151EB
S9295 S9295-01
-300
TE-cooler current Ite (A)
Element temperature T (˚C)
TE-cooler voltage Vte (V)
0.40.2 0.6 1.00.8
(Typ. Ta=25 ˚C)
-10
30
10
20
0
-20
0
2
6
4
5
3
1
T vs. Ite
Vte vs. Ite
KSPDB0172EB
2
Si photodiode with preamp
S9295 series
3
42.0 ± 0.4
34.0 ± 0.2
Window
16.0 ± 0.2
(2 ×) 4
7.0 ± 0.3
19 ± 1
0.9 ± 0.2
Active area
Sapphire
window (t=0.5)
Photosensitive
surface
17.8 ± 0.3
7.6 ± 0.3 (4.7)
Index mark
24.3 ± 0.2
27.4 ± 0.3
Lead
1.0
TE-cooler
S9295: Two-stage
S9295-01: One-stage
Vcc
TE-cooler
Case
GND Vcc-
Out
NC
Package
Rf=10 GΩ
-
+
-
++
Photodiode
Thermistor
■ External connection
KSPDC0047EA
■ Dimensional outlines (unit: mm)
KSPDA0071EC
S9295
42.0 ± 0.4
34.0 ± 0.2
Window
16.0 ± 0.2
(2 ×) 4
13.5 ± 0.3
19 ± 1
0.9 ± 0.2
Active area
Sapphire
window (t=0.5)
Photosensitive
surface
17.8 ± 0.3
7.6 ± 0.3
6.0
Index mark
24.3 ± 0.2
27.4 ± 0.3
Lead
1.0
S9295-01
KSPDA0079EB
0
-30
Temperature (˚C)
Thermistor resistance (kΩ)
-10 0-20 10 3020
(Typ.)
40
120
80
100
60
20
■ Thermistor resistance vs . temperature
KSPDB0152EA
A tantalum or ceramic capacitor of 0.1 to 10 µF must be connected to the supply voltage leads (pins ➃ and ➉) as a bypass
capacitor used to prevent the device from oscillation.
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions .
Specifications are subject to change without notice. No patent rights are granted to an y of the circuits described herein.
Type numbers of products listed inthe specification sheets or supplied as samples ma y have a suffix "(X)" which means tentative specifications or a suffix "(Z)"
which means dev elopmental specifications. ©2010 Hamamatsu Photonics K.K.
Si photodiode with preamp
S9295 series
Cat. No. KSPD1064E02
Jul. 2010 DN
Precautions for use
■ ESD
S9295 series may be damaged or their performance may deteriorate by such factors as electro static discharge from the
human body, surge voltage from measurement equipment, leakage voltages from soldering irons and packing materials. As a
counter measure against electro static discharge, the device, operator, work place and measur ing jigs must all be set at the
same potential. The following precautions must be observed during use:
•To protect the device from electro static discharge which accumulate on the operator or the operator,s clothes, use a wrist
strap or similar tools to ground the operator,s body via a high impedance resistor (1 MΩ).
•A semiconductive sheet (1 MΩ to 10 MΩ) should be laid on both the work table and the floor in the work area.
•When soldering, use an electr ically grounded solder ing iron with an isolation resistance of more than 10 MΩ.
•For containers and packing, use of a conductive material or aluminum foil is effective. When using an antistatic material, use
one with a resistance of 0.1 MΩ/cm2 to 1 GΩ/cm2.
■ Strength
Ther moelectr ically-cooler devices may be damaged if subjected to shock, for example drop impact. Take sufficient care
when handling these devices.
■ Lead forming
When forming the leads, take care not to apply excessive force to the lead sealing glass. Excessive force may impair the
her metic sealing, possibly degrading the cooling capacity.
To form the leads, hold the roots of the leads securely with a pair of pliers and bend them.
■ Heatsink
Use a heatsink with ther mal resistance less than 1.3 °C/W. Apply thermal grease between the heatsink and detector
package, and then fasten them with the screws. Be careful not to give any excessive force or mechanical stress to the
detector package at this point.
■ Wiring
•Be careful not to misconnect the plus and minus leads of the thermoelectr ic cooler or preamplifier. Supplying a voltage or
current while these connections are reversed may damage the device.
•The feedback resistor integrated into S9295 series is high so it is susceptible to external noise. Always ground the case
terminal when using S9295.
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