Specifications subject to change without notice.
n North America: Tel. (800) 366-2266
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 1
Visit www.macom.com for additional data sheets and product information.
3.4 V, 1.2 W RF Power Amplifier IC
V 1.0
Features
§ Ideal for Pager Applications
§ +30.8 dBm Output Power
§ 30.8 dB Power Gain
§ Single Positive Supply
§ Class AB Bias
§ 50 Ohm Input Impedance
§ Single Capacitor Output Match
Description
The MA02107AF is a three stage power amplifier,
designed for paging applications to have an output
power of +30.8 dBm with an input power of 0 dBm.
This power amplifier operates at +3.4 volts with
55% typical power added efficiency. The
MA02107AF is mounted in a standard outline 16-pin
TSSOP plastic package.
The MA02107AF is fabricated using M/A-COM’s
self-aligned MSAG ®-Lite MESFET process for a low
single supply voltage, high power efficiency, and
excellent reliability.
Ordering Information
Part Number Description
MA02107AF-R7 7 inch, 1000 piece reel
MA02107AF-R13 13 inch, 3000 piece reel
MA02107AF-SMB Sample Test Board
Functional Schematic
VDD2
GND
GND
GND
RF OUT/VDD3
GND
GND
N/C
V
DD1
N/C
GND
GND
RF IN
GND
GND
N/C
Pin Configuration
Pin Function Description
1 VDD1 First Stage Supply Voltage
2 N/C Not Connected
3 GND Ground
4 GND Ground
5 RFIN RF Input
6 GND Ground
7 GND Ground
8 N/C Not Connected
9 N/C Not Connected
10 GND Ground
11 GND Ground
12 RFOUT/VDD3 RF Output/Third Stage Supply
13 GND Ground
14 GND Ground
15 GND Ground
16 VDD2 Second Stage Supply Voltage
MA02107AF
Part Description
Specifications subject to change without notice.
n North America: Tel. (800) 366-2266
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 2
Visit www.macom.com for additional data sheets and product information.
3.4 V, 1.2 W RF Power Amplifier IC MA02107AF
V 1.0
Electrical Specifications: TS = 35 °C1, Z0 = 50 Ω Ω2,3
Parameter Test Conditions Units Min Typ Max
Frequency MHz 900 942
Output Power dBm 30.0 30.8
Power Gain dB 30.8
Power Added Efficiency % 45 55
Input Return Loss dB 10 15
2nd Harmonics dBc -35 -29
3rd Harmonics dBc -50 -45
Thermal Resistance 3rd Stage FET to solder point of pin 13 oC/W 41
Stability +3.0 V < VCC < +5.0 V, POUT < +31 dBm,
VSWR < 5:1, -40ºC < TC
< +85ºC, RBW
= 3 MHz max hold All spurs < -60 dBc
1. Ts is the temperature measured at the soldering point of pin 13.
2. Unless otherwise specified, input power is 0 dBm, VDD is +3.45 V, and test frequency is 900 MHz.
3. The output is externally matched to 50 ohms.
Absolute Maximum Ratings1
Parameter Absolute Maximum
Max Input Power +6 dBm
Operating Voltages +5.0 volts
Operating Temperature, Ts -40 °C to +70 °C
Channel Temperature +150 °C
Storage Temperature -40 °C to +150 °C
1. Exceeding any one or combination of these limits may cause permanent damage.
Application Information
Static Sensitivity
Gallium arsenide integrated circuits are ESD sensitive and can be damaged by static electricity. Use proper ESD precautions when
handling these devices.
Board Layout
Sample Test Board 50 Ohm Lead Transition
Part Description
Specifications subject to change without notice.
n North America: Tel. (800) 366-2266
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 3
Visit www.macom.com for additional data sheets and product information.
3.4 V, 1.2 W RF Power Amplifier IC MA02107AF
V 1.0
Output Match Impedance (as seen from pin 12)
0
0.2
0.5
1
180
170
-80
-90
-100
-110
-120
-130
-140
-150
-160
-170
850 MHz
925 MHz 900 MHz
8.4 - j9.2ΩΩ
Typical Performance Curves
Output Power and PAE vs. Input Power
10
15
20
25
30
35
40
-10 -5 0 5
PIN, Input Power (dBm)
POUT, Output Power (dBm)
0
10
20
30
40
50
60
Pwr Added Efficiency
η
POUT
ƒ = 901 MHz
VDD = 3.4 V
Output Power and PAE vs. Supply Voltage
0
5
10
15
20
25
30
35
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VDD, Supply Voltage (Volts)
POUT, Output Power (dBm)
0
10
20
30
40
50
60
70
η, Pwr Added Efficiency (%)
POUT
η
ƒ = 901 MHz
PIN = 0 dBm
Output Power, PAE, and VSWR vs. Fequency
0
10
20
30
40
50
60
800 850 900 950 1000
ƒ, Frequency (MHz )
POUT (dBm) and (%)
1:1
2:1
3:1
η
VSWR
POUT
η
Harmonics
-40
-30
-20
-10
0
10
20
30
40
ƒο 2ƒο 3ƒο 4ƒο 5ƒο
Frequency
POUT, Output Power (dBm)
ƒο = 901 MHz
PIN = 0 dBm
VDD = 3.4 V
Part Description
Specifications subject to change without notice.
n North America: Tel. (800) 366-2266
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 4
3.4 V, 1.2 W RF Power Amplifier IC MA02107AF
V 1.0
Application Schematic
RF
INPUT
+
V
DD
(+3.4V)
RF
OUTPUT
C1 C2
T1
L1
C5
C4
N/C
N/C N/C
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
C3
List of components:
C1 = 0.1µF Kemet multilayer ceramic chip capacitor (C1206C104K5RAC)
C2 = 4700 pF Kemet multilayer ceramic chip capacitor (C0805C472K5RAC)
C4 = 6.8 pF DLI multilayer ceramic chip capacitor (C11AH7R5B5TXL)
C3 = C5 = 100 pF DLI multilayer ceramic chip capacitor (DC Block; C11AH101K5TXL)
L1 = 39 nH Coilcraft chip inductor (1008CS.390XMBB)
T1 = 0.19" of 50 ohm grounded coplanar waveguide (60 mil GETEK board)
TSSOP-16 Package
Dimensions in
millimeters Dimensions in inches
SYMBOL MIN NOM MAX MIN NOM MAX
A 1.05 1.10 1.20 0.041 0.043 0.047
A1 0.05 0.10 0.15 0.002 0.004 0.006
A2 — 1.00 1.05 — 0.039 0.041
b 0.20 0.25 0.28 0.008 0.010 0.011
C — 0.127 — — 0.005 —
D 4.90 5.075 5.10 0.193 0.200 0.201
E 6.20 6.40 6.60 0.244 0.252 0.260
E1 4.30 4.40 4.50 0.169 0.173 0.177
e — 0.65 — — 0.025 —
L 0.50 0.60 0.70 0.020 0.024 0.028
L1 0.90 1.00 1.10 0.035 0.039 0.043
y — — 0.10 — — 0.004
θ 0° 4° 8° 0° 4° 8°
NOTES:
1. Controlling dimension: mm
2. Lead frame material: EFTEC 64
3. Dimension “D” does not include mold flash, protrusions or gate burrs
4. Dimension “E” does not include interlead flash or protrusions
5. Tolerance: ±0.254 mm (±0.010″) unless otherwise specified
6. End flash max: 0.12 mm (0.005 ″)
