APTMC120AM55CT1AG Phase leg SiC MOSFET Power Module VDSS = 1200V RDSon = 49m max @ Tj = 25C ID = 55A @ Tc = 25C Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies * Motor control Features * SiC Power MOSFET - Low RDS(on) - High temperature performance * SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF * * * * Very low stray inductance Internal thermistor for temperature monitoring High level of integration AlN substrate for improved thermal performance Benefits * * * * Pins 1/2 ; 3/4 ; 5/6 must be shorted together * * Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile RoHS Compliant All ratings @ Tj = 25C unless otherwise specified 1. SiC MOSFET characteristics (Per MOSFET) Absolute maximum ratings IDM VGS RDSon PD Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Tc = 25C Tc = 80C Tc = 25C Max ratings 1200 55 42 110 -10/+25 49 250 Unit V June, 2013 ID Parameter Drain - Source Breakdown Voltage A V m W These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-6 APTMC120AM55CT1AG - Rev 1 Symbol VDSS APTMC120AM55CT1AG Electrical Characteristics Symbol Characteristic IDSS Zero Gate Voltage Drain Current RDS(on) Drain - Source on Resistance VGS(th) IGSS Gate Threshold Voltage Gate - Source Leakage Current Test Conditions VGS = 0V ; VDS = 1200V Tj = 25C VGS = 20V ID = 40A Tj = 150C VGS = VDS, ID = 2mA VGS = 20 V, VDS = 0V Min 1.7 Typ 25 40 75 2.2 Max 200 49 104 Unit A m 500 V nA Max Unit Dynamic Characteristics Symbol Ciss Coss Crss Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Total gate Charge Qgs Gate - Source Charge Qgd Gate - Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Rise Time Turn-off Delay Time Tf Fall Time Eon Turn on Energy Eoff Turn off Energy RthJC Junction to Case Thermal Resistance Test Conditions VGS = 0V VDS = 1000V f = 1MHz Min 22 nC 36 12 VGS = -5/+20V VBus = 800V ID = 40A RL = 20 ; RG = 25 VGS = -5/+20V VBus = 600V ID = 40A RG = 25 pF 98 VGS= 20V VBus = 800V ID = 40A Inductive Switching Typ 1900 160 13 14 ns 23 18 Tj = 150C 0.9 mJ Tj = 150C 0.5 mJ 0.5 C/W Typ Max Unit V 64 112 20 1.6 2.3 400 2000 2. SiC diode characteristics (Per SiC diode) SiC diode ratings and characteristics IF Maximum Reverse Leakage Current DC Forward Current VF Diode Forward Voltage QC Total Capacitive Charge C Total Capacitance RthJC VR=1200V Min 1200 Tj = 25C Tj = 175C Tc = 125C Tj = 25C IF = 20A Tj = 175C IF = 20A, VR = 120V di/dt = 1000A/s 192 f = 1MHz, VR = 400V 138 Junction to Case Thermal Resistance A 1.8 3 160 f = 1MHz, VR = 200V V nC pF 0.8 www.microsemi.com A June, 2013 IRM Test Conditions C/W 2-6 APTMC120AM55CT1AG - Rev 1 Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage APTMC120AM55CT1AG 3. Thermal and package characteristics Package characteristics Symbol Characteristic VISOL RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz SiC MOSFET TJ Operating junction temperature range SiC diode TJOP TSTG TC Torque Wt Min 4000 -40 -40 Recommended junction temperature under switching conditions -40 Storage Temperature Range Operating Case Temperature Mounting torque Package Weight -40 -40 2 To heatsink M4 Typ Max 150 175 TJmax -25 125 125 3 80 Unit V C N.m g Temperature sensor NTC (see application note APT0406 on www.microsemi.com). Symbol R25 R25/R25 B25/85 B/B Characteristic Resistance @ 25C Min T25 = 298.15 K TC=100C RT = R 25 Typ 50 5 3952 4 Max Unit k % K % T: Thermistor temperature 1 RT: Thermistor value at T 1 - exp B 25 / 85 T25 T See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com www.microsemi.com 3-6 APTMC120AM55CT1AG - Rev 1 June, 2013 SP1 Package outline (dimensions in mm) APTMC120AM55CT1AG 4. Typical Performance Curves SiC MOSFET Output Characteristics Output Characteristics 60 80 ID, Drain Current (A) ID, Drain Current (A) TJ=25C 60 TJ=150C 40 20 50 VGS=20V 40 10V 30 20 10 TJ=1 50 C VGS=20V 0 0 0 1 2 3 4 5 6 7 0 8 4 6 8 Transfert Characteristics Normalized RDS(on) vs. Temperature 50 2 VGS=20V I D=40A 1.75 1.5 1.25 1 0.75 25 50 75 100 125 40 TJ=150C 30 20 TJ=25C 10 0 150 2 4 6 8 10 12 14 VGS , Gate to Source Voltage (V) TJ, Junction Temperature (C) inductive switching energy vs RG Inductive switching energy vs current 1.2 2.0 Switching Energy (mJ) Eon 1.0 Switching Energy (mJ) 2 VDS, Drain to Source Voltage (V) ID, Drain Current (A) RDSon, Drain to Source ON resistance VDS, Drain to Source Voltage (V) 0.8 Eoff 0.6 0.4 VGS=-5/20V I D = 40A VBUS = 600V TJ = 150 C 0.2 37.5 50 62.5 1.2 Eon 0.8 Eoff 0.4 0.0 0.0 25 VGS =-5/20V R G = 25 VBUS = 600V TJ = 150 C 1.6 0 75 10 20 30 40 50 60 70 80 Drain current (A) Gate Resistance (Ohms) 0.9 0.4 0.7 0.3 0.2 0.1 June, 2013 0.5 0.5 0.3 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) www.microsemi.com 4-6 APTMC120AM55CT1AG - Rev 1 Thermal Impedance (C/W) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.6 APTMC120AM55CT1AG Gate Charge vs Gate to Source Voltage 20 Capacitance vs Drain to Source Voltage VGS , Gate to Source Voltage (V) C, Capacitance (pF) 10000 Ciss 1000 Coss 100 Crss 10 0 200 400 600 800 VGS = 20V I D = 40A VDS = 800V 16 12 8 4 0 1000 0 20 VDS , Drain to Source Voltage (V) 40 60 80 100 Gate Charge (nC) Operating Frequency vs Drain Current 700 VBUS=600V D=50% R G =25 TJ=1 50 C TC =75 C 600 Frequency (kHz) ZVS 500 400 300 ZCS 200 100 Hard switching 0 20 30 40 50 60 ID, Drain Current (A) SiC diode Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (C/W) 1 0.8 D = 0.9 0.6 0.7 0.5 0.4 0.3 0.2 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) Reverse Characteristics Forward Characteristics 40 200 30 TJ=75C 20 TJ=125C 10 TJ=175C 0 0 0.5 1 1.5 2 2.5 3 3.5 IR Reverse Current (A) 150 TJ=175C 100 TJ=75C TJ=125C 50 0 400 800 1000 1200 1400 1600 VR Reverse Voltage (V) June, 2013 VF Forward Voltage (V) TJ=25C 600 Capacitance vs.Reverse Voltage 1400 C, Capacitance (pF) 1200 1000 800 600 400 200 0 1 10 100 1000 VR Reverse Voltage www.microsemi.com 5-6 APTMC120AM55CT1AG - Rev 1 IF Forward Current (A) TJ=25C APTMC120AM55CT1AG DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. If the recipient of this document has entered into a disclosure agreement with Microsemi, then the terms of such Agreement will also apply. This document and the information contained herein may not be modified, by any person other than authorized personnel of Microsemi. No license under any patent, copyright, trade secret or other intellectual property right is granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication, inducement, estoppels or otherwise. Any license under such intellectual property rights must be approved by Microsemi in writing signed by an officer of Microsemi. Microsemi reserves the right to change the configuration, functionality and performance of its products at anytime without any notice. This product has been subject to limited testing and should not be used in conjunction with lifesupport or other mission-critical equipment or applications. Microsemi assumes no liability whatsoever, and Microsemi disclaims any express or implied warranty, relating to sale and/or use of Microsemi products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other intellectual property right. Any performance specifications believed to be reliable but are not verified and customer or user must conduct and complete all performance and other testing of this product as well as any user or customers final application. User or customer shall not rely on any data and performance specifications or parameters provided by Microsemi. It is the customer's and user's responsibility to independently determine suitability of any Microsemi product and to test and verify the same. The information contained herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with such information is entirely with the User. Microsemi specifically disclaims any liability of any kind including for consequential, incidental and punitive damages as well as lost profit. The product is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/legal/tnc.asp Life Support Application Seller's Products are not designed, intended, or authorized for use as components in systems intended for space, aviation, surgical implant into the body, in other applications intended to support or sustain life, or for any other application in which the failure of the Seller's Product could create a situation where personal injury, death or property damage or loss may occur (collectively "Life Support Applications"). Buyer agrees not to use Products in any Life Support Applications and to the extent it does it shall conduct extensive testing of the Product in such applications and further agrees to indemnify and hold Seller, and its officers, employees, subsidiaries, affiliates, agents, sales representatives and distributors harmless against all claims, costs, damages and expenses, and attorneys' fees and costs arising, directly or directly, out of any claims of personal injury, death, damage or otherwise associated with the use of the goods in Life Support Applications, even if such claim includes allegations that Seller was negligent regarding the design or manufacture of the goods. www.microsemi.com 6-6 APTMC120AM55CT1AG - Rev 1 June, 2013 Buyer must notify Seller in writing before using Seller's Products in Life Support Applications. Seller will study with Buyer alternative solutions to meet Buyer application specification based on Sellers sales conditions applicable for the new proposed specific part.