APTMC120AM55CT1AG
APTMC120AM55CT1AG – Rev 1 June, 2013
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Pins 1/2 ; 3/4 ; 5/6 must be shorted together
All ratings @ Tj = 25°C unless otherwise specified
1. SiC MOSFET characteristics (Per MOSFET)
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
See application note APT0502 on www.microsemi.com
Symbol Parameter Max ratings Unit
VDSS Drain - Source Breakdown Voltage 1200 V
ID Continuous Drain Current Tc = 25°C 55
A
Tc = 80°C 42
IDM Pulsed Drain current 110
VGS Gate - Source Voltage -10/+25 V
RDSon Drain - Source ON Resistance 49 mΩ
PD Maximum Power Dissipation Tc = 25°C 250 W
Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control
Features
• SiC Power MOSFET
- Low RDS(on)
- High temperature performance
• SiC Schottky Diode
- Zero reverse recovery
- Zero forward recovery
- Temperature Independent switching behavior
- Positive temperature coefficient on VF
• Very low stray inductance
• Internal thermistor for temperature monitoring
• High level of integration
• AlN substrate for improved thermal performance
Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Low profile
• RoHS Compliant
Phase leg
S
iC MOSFET Power Modul
e
VDSS = 1200V
RDSon = 49mΩ max @ Tj = 25°C
ID = 55A @ Tc = 25°C
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Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
IDSS Zero Gate Voltage Drain Current VGS = 0V ; VDS = 1200V 25 200 µA
RDS(on) Drain – Source on Resistance VGS = 20V
ID = 40A
T
j
= 25°C 40 49 mΩ
Tj = 150°C 75 104
VGS
(
th
)
Gate Threshold Voltage VGS = VDS, ID = 2mA 1.7 2.2 V
IGSS Gate – Source Leakage Current VGS = 20 V, VDS = 0V 500 nA
Dynamic Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
Ciss Input Capacitance VGS = 0V
VDS = 1000V
f = 1MHz
1900
pF Coss Output Capacitance 160
Crss Reverse Transfer Capacitance 13
Qg Total gate Charge VGS= 20V
VBus = 800V
ID = 40A
98
nC
Qgs Gate – Source Charge 22
Qgd Gate – Drain Charge 36
Td(on) Turn-on Delay Time VGS = -5/+20V
VBus = 800V
ID = 40A
RL = 20Ω ; RG = 25Ω
12
ns
Tr Rise Time 14
Td(off) Turn-off Delay Time 23
Tf Fall Time 18
Eon Turn on Energy Inductive Switching
VGS = -5/+20V
VBus = 600V
ID = 40A
RG = 25Ω
Tj = 150°C 0.9 mJ
Eoff Turn off Energy Tj = 150°C 0.5 mJ
RthJC Junction to Case Thermal Resistance 0.5 °C/W
2. SiC diode characteristics (Per SiC diode)
SiC diode ratings and characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
VRRM Maximum Peak Repetitive Reverse Voltage 1200 V
IRM Maximum Reverse Leakage Current VR=1200V Tj = 25°C 64 400 µA
Tj = 175°C 112 2000
IF DC Forward Current Tc = 125°C 20 A
VF Diode Forward Voltage IF = 20A T
j
= 25°C 1.6 1.8 V
T
j
= 175°C 2.3 3
QC Total Capacitive Charge IF = 20A, VR = 120V
di/dt = 1000A/µs 160 nC
C Total Capacitance f = 1MHz, VR = 200V 192 pF
f = 1MHz, VR = 400V 138
RthJC Junction to Case Thermal Resistance 0.8 °C/W
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3. Thermal and package characteristics
Package characteristics
Symbol Characteristic Min Typ Max Unit
VISOL RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz 4000 V
TJ Operating junction temperature range SiC MOSFET -40 150
°C
SiC diode -40 175
TJOP Recommended junction temperature under switching conditions -40 TJmax
-25
TSTG Storage Temperature Range -40 125
TC Operating Case Temperature -40 125
Torque Mounting torque To heatsink M4 2 3 N.m
Wt Package Weight 80 g
Temperature sensor NTC (see application note APT0406 on www.microsemi.com).
Symbol Characteristic Min Typ Max Unit
R25 Resistance @ 25°C 50 kΩ
∆R25/R25 5 %
B25/85 T
25 = 298.15 K 3952 K
∆B/B TC=100°C 4
%
⎥
⎥
⎦
⎤
⎢
⎢
⎣
⎡
⎟
⎟
⎠
⎞
⎜
⎜
⎝
⎛−
=
TT
B
R
RT
11
exp
25
85/25
25
SP1 Package outline (dimensions in mm)
See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com
T: Thermistor temperature
RT: Thermistor value at T
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4. Typical Performance Curves
SiC MOSFET
T
J
=25°C
T
J
=150°C
0
20
40
60
80
012345678
I
D
, Drain Current (A)
V
DS
, Drain to Source Voltage (V)
Output Characteristics
V
GS
=20V
V
GS
=20V
10V
0
10
20
30
40
50
60
02468
I
D
, Drain Current (A)
V
DS
, Drain to Source Voltage (V)
Output Characteristics
T
J
=1 50 °C
0.75
1
1.25
1.5
1.75
2
25 50 75 100 125 150
T
J
, Junction Temperature (°C)
Normalized R
DS (on)
vs. Temperature
R
DSon
, Drain to Source ON resistance
V
GS
=20V
I
D
=40A
T
J
=25°C
T
J
=150°C
0
10
20
30
40
50
2468101214
I
D
, Drain Current (A)
V
GS
, Gate to Source Voltage (V)
Transfert Characteristics
0.9
0.7
0.5
0.3
0.1
0.05 Single Pulse
0
0.1
0.2
0.3
0.4
0.5
0.6
0.00001 0.0001 0.001 0.01 0.1 1 10
Thermal Impedance (°C/W)
rectangular Pulse Duration (Seconds)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Eon
Eoff
0.0
0.4
0.8
1.2
1.6
2.0
0 1020304050607080
Switching Energy (mJ)
Drain current (A)
Inductive switching energy vs current
V
GS
=-5/20V
R
G
= 25
V
BUS
= 600V
T
J
= 150°C
Eon
Eoff
0.0
0.2
0.4
0.6
0.8
1.0
1.2
25 37.5 50 62.5 75
Switching Energy (mJ)
Gate Resistance (Ohms)
inductive switching energy vs RG
V
GS
=-5/20V
I
D
= 40A
V
BUS
= 600V
T
J
= 150 °C
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Ciss
Crss
Coss
10
100
1000
10000
0 200 400 600 800 1000
C, Capacitance (pF)
V
DS
, Drain to Source Voltage (V)
Capacitance vs Drain to Source Voltage
0
4
8
12
16
20
0 20406080100
V
GS
, Gate to Source Voltage (V)
Gate Charge (nC)
Gate Charge vs Gate to Source Voltage
V
GS
= 20V
I
D
= 40A
V
DS
= 800V
ZCS
Hard
switching
ZVS
0
100
200
300
400
500
600
700
20 30 40 50 60
Frequency (kHz)
I
D
, Drain Current (A)
Operating Frequency vs Drain Current
V
BUS
=600V
D=50%
R
G
=25
T
J
=1 50 ° C
T
C
=75 ° C
SiC diode
D = 0.9
0.7
0.5
0.3
0.1
0.05 Sin gl e Pul se
0
0.2
0.4
0.6
0.8
1
0.00001 0.0001 0.001 0.01 0.1 1 10
Thermal Impedance (°C/W)
Rectangular Pulse Duration (Seconds)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
T
J
=25°C
T
J
=75°C
T
J
=125°C
T
J
=175°C
0
10
20
30
40
00.511.522.533.5
I
F
Forward Current (A)
V
F
Forward Voltage (V)
Forward Characteristics
T
J
=25°C
T
J
=75°C
T
J
=125°C
T
J
=175°C
0
50
100
150
200
400 600 800 1000 1200 1400 1600
I
R
Reverse Current (µA)
V
R
Reverse Voltage (V)
Reverse Characteristics
0
200
400
600
800
1000
1200
1400
1 10 100 1000
C, Capacitance (pF)
V
R
Reverse Voltage
Capacitance vs.Reverse Voltage
APTMC120AM55CT1AG
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