RF Transistors 2N700,A (GERMANIUM) 2N700A USA/JAN G Voro = 25 V Nf Ic =50mA PNP germanium mesa transistors for oscillator, CASE 21 frequency multiplier, wide-band mixer and wide-band (TO-17) amplifier applications. MAXIMUM RATINGS Rating Symbol Value Unit CoNector-Base Voltage VcB 25 Vde Collector-Emitter Voltage VcEo Vdc 2N700 20 2N700A 25 Emitter-Base Voltage VEB 0.2 Vde Collector DC Current Ic 50 mAdc Junction Temperature Ty 100 oC Storage Temperature Tstg -65 to +100 c Total Device Dissipation Ph 15 mw at 25C Ambient (Derate 1 mW/C above 25C) POWER GAIN, CURRENT GAIN, & NOISE FIGURE versus FREQUENCY 1000 800 POWER GAIN 600 DECIBELS Veg = --6 Vde I, = 2 mAdc 400 NOISE FIGURE 200 fr, CURRENT GAIN BANDWIDTH PRODUCT (MHz) 2 5 10 20 50 100 200 500 61000 f, FREQUENCY (miiz) 9-9 CURRENT-GAIN-BANDWIDTH PRODUCT versus GURRENT AND VOLTAGE le @ Veq = 6 Ve 20 40 6.0 8.0 10 12 14 16 Ig. EMITTER CURRENT (mAdc) Vew COLLECTOR BASE VOLTAGE (VOLTS)