IRFP4127PbF
HEXFET® Power MOSFET
D
S
G
TO-247AC
G D S
Gate Drain Source
Application
High Efficiency Synchronous Rectification in SMPS
Uninterruptible Power Supply
High Speed Power Switching
Hard Switched and High Frequency Circuits
Benefits
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free, RoHS Compliant
Base part number Package Type Standard Pack Orderable Part Number
Form Quantity
IRFP4127PbF TO-247AC Tube 25 IRFP4127PbF
VDSS 200V
RDS(on) typ. 17m
max 21m
ID 75A
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 75
A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 53
IDM Pulsed Drain Current 300
PD @TC = 25°C Maximum Power Dissipation 341 W
Linear Derating Factor 2.3 W/°C
VGS Gate-to-Source Voltage ± 20 V
dv/dt Peak Diode Recovery dv/dt 57 V/ns
TJ
TSTG
Operating Junction and
Storage Temperature Range -55 to + 175
Soldering Temperature, for 10 seconds
(1.6mm from case) 300
Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m)
Avalanche Characteristics
EAS (Thermally limited) Single Pulse Avalanche Energy 244mJ
Thermal Resistance
Parameter Typ. Max. Units
RJC Junction-to-Case ––– 0.4
°C/W
RCS Case-to-Sink, Flat Greased Surface 0.24 –––
RJA Junction-to-Ambient ––– 40
°C
S
G
D
1 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback March 09, 2015
IRFP4127PbF
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Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 200 ––– ––– V VGS = 0V, ID = 250µA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.23 ––– V/°C Reference to 25°C, ID = 5mA
RDS(on) Static Drain-to-Source On-Resistance ––– 17 21 m VGS = 10V, ID = 44A
VGS(th) Gate Threshold Voltage 3.0 ––– 5.0 V VDS = VGS, ID = 250µA
IDSS Drain-to-Source Leakage Current ––– ––– 20 µA VDS = 200 V, VGS = 0V
––– ––– 250 VDS =200V,VGS = 0V,TJ =125°C
IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V
RG Gate Resistance ––– 3.0 –––
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
gfs Forward Transconductance 45 ––– ––– S VDS = 50V, ID =44A
Qg Total Gate Charge ––– 100 150
nC
ID = 44A
Qgs Gate-to-Source Charge ––– 30 ––– VDS = 100V
Qsync Total Gate Charge Sync. (Qg - Qgd) ––– 69 ––– ID = 44A, VDS =0V, VGS = 10V
td(on) Turn-On Delay Time ––– 17 –––
ns
VDD = 100V
tr Rise Time ––– 18 ––– ID = 44A
td(off) Turn-Off Delay Time ––– 56 ––– RG= 2.7
tf Fall Time ––– 22 ––– VGS = 10V
Ciss Input Capacitance ––– 5380 –––
pF
VGS = 0V
Coss Output Capacitance ––– 410 ––– VDS = 50V
Crss Reverse Transfer Capacitance ––– 86 ––– ƒ = 1.0MHz
Coss eff.(ER) Effective Output Capacitance (Energy Related) ––– 360 ––– VGS = 0V, VDS = 0V to 160V
See Fig.11
Coss eff.(TR) Output Capacitance (Time Related) ––– 590 ––– VGS = 0V, VDS = 0V to 160V
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current ––– ––– 75
A
MOSFET symbol
(Body Diode) showing the
ISM Pulsed Source Current ––– ––– 300 integral reverse
(Body Diode) p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C,IS = 44A,VGS = 0V
trr Reverse Recovery Time ––– 136 ––– ns TJ = 25°C VDD = 100V
––– 139 ––– TJ = 125°C IF = 44A,
Qrr Reverse Recovery Charge ––– 458 ––– nC TJ = 25°C di/dt = 100A/µs
––– 688 ––– TJ = 125°C
IRRM Reverse Recovery Current ––– 8.3 ––– A TJ = 25°C
Qgd Gate-to-Drain Charge ––– 31 ––– VGS = 10V
D
S
G
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Recommended max EAS limit, starting TJ = 25°C, L = 0.25mH, RG = 25, IAS = 44A, VGS =10V.
I
SD 4A, di/dt A/µs, VDD V(BR)DSS, TJ 175°C.
Pulse width 400µs; duty cycle 2%.
C
oss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
C
oss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques
refer to application note #AN-994
Ris measured at TJ approximately 90°C
IRFP4127PbF
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Fig 1. Typical Output Characteristics
Fig 4. Normalized On-Resistance vs. Temperature
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
Fig 3. Typical Transfer Characteristics
Fig 2. Typical Output Characteristics
0.1 110 100
VDS, Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
1000
ID, Drain-to-Source Current (A)
60µs PULSE WIDTH
Tj = 25°C
4.5V
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
0.1 110 100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
ID, Drain-to-Source Current (A)
60µs PULSE WIDTH
Tj = 175°C
4.5V
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
3.0 4.0 5.0 6.0 7.0 8.0
VGS, Gate-to-Source Voltage (V)
0.1
1
10
100
1000
ID, Drain-to-Source Current )
VDS = 50V
60µs PULSE WIDTH
TJ = 25°C
TJ = 175°C
-60 -40 -20 020 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
0.5
1.0
1.5
2.0
2.5
3.0
3.5
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 44A
VGS = 10V
110 100
VDS, Drain-to-Source Voltage (V)
0
2000
4000
6000
8000
C, Capacitance (pF)
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
0 20 40 60 80 100 120
QG Total Gate Charge (nC)
0
4
8
12
16
VGS, Gate-to-Source Voltage (V)
VDS= 160V
VDS= 100V
VDS= 40V
ID= 44A
IRFP4127PbF
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Fig 8. Maximum Safe Operating Area
Fig 11. Typical Coss Stored Energy
Fig 10. Drain-to–Source Breakdown Voltage
Fig 7. Typical Source-Drain Diode Forward Voltage
3.0 4.0 5.0 6.0 7.0 8.0
VGS, Gate-to-Source Voltage (V)
0.1
1
10
100
1000
ID, Drain-to-Source Current )
VDS = 50V
60µs PULSE WIDTH
TJ = 25°C
TJ = 175°C
-60 -40 -20 020 40 60 80 100120140160180
TJ , Temperature ( °C )
180
200
220
240
260
V(BR)DSS, Drain-to-Source Breakdown Voltage (V)
Id = 5mA
040 80 120 160 200
VDS, Drain-to-Source Voltage (V)
0.0
2.0
4.0
6.0
8.0
Energy (µJ)
Fig 9. Maximum Drain Current vs. Case Temperature
Fig 12. Maximum Avalanche Energy vs. Drain Current
25 50 75 100 125 150 175
TC , CaseTemperature (°C)
0
20
40
60
80
ID , Drain Current (A)
25 50 75 100 125 150 175
Starting TJ, Junction Temperature (°C)
0
200
400
600
800
1000
1200
EAS, Single Pulse Avalanche Energy (mJ)
ID
TOP 7.7A
12.6A
BOTTOM 44A
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
ID, Drain-to-Source Current (A)
Tc = 25°C
Tj = 175°C
Single Pulse
10msec
1msec
100µsec
DC
OPERATION IN
THIS AREA
LIMITED BY RDS(on)
IRFP4127PbF
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Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 15. Maximum Avalanche Energy vs. Temperature
Fig 14. Typical Avalanche Current vs. Pulse Width
1E-006 1E-005 0.0001 0.001 0.01 0.1
t1 , Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
Thermal Response ( Z thJC ) °C/W
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE ) Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Ri (°C/W) I (sec)
0.02 0.000019
0.08333 0.000078
0.181667 0.001716
0.11333 0.008764
J
J
1
1
2
2
3
3
R
1
R
1
R
2
R
2
R
3
R
3
Ci= iRi
Ci= iRi
C
C
4
4
R
4
R
4
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
0
50
100
150
200
250
EAR , Avalanche Energy (mJ)
TOP Single Pulse
BOTTOM 1% Duty Cycle
ID = 44A
1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02
tav (sec)
0.1
1
10
100
Avalanche Current (A)
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming j = 25°C and
Tstart = 150°C.
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 150°C and
Tstart = 25°C (Single Pulse)
IRFP4127PbF
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Fig 18. Typical Recovery Current vs. dif/dt Fig 19. Typical Stored Charge vs. dif/dt
Fig 20. Typical Stored Charge vs. dif/dt
100 200 300 400 500 600 700 800 900 1000
dif / dt - (A / µs)
0
500
1000
1500
2000
2500
3000
QRR - (nC)
IF = 44A
VR = 100V
TJ = 125°C
TJ = 25°C
100 200 300 400 500 600 700 800 900 1000
dif / dt - (A / µs)
0
500
1000
1500
2000
2500
3000
QRR - (nC)
IF = 29A
VR = 100V
TJ = 125°C
TJ = 25°C
100 200 300 400 500 600 700 800 900 1000
dif / dt - (A / µs)
0
10
20
30
40
50
60
IRRM - (A)
IF = 44A
VR = 100V
TJ = 125°C
TJ = 25°C
100 200 300 400 500 600 700 800 900 1000
dif / dt - (A / µs)
0
10
20
30
40
50
IRRM - (A)
IF = 29A
VR = 100V
TJ = 125°C
TJ = 25°C
Fig 17. Typical Recovery Current vs. dif/dt
Fig 16. Threshold Voltage vs. Temperature
-75 -50 -25 025 50 75 100 125 150 175
TJ , Temperature ( °C )
1.0
2.0
3.0
4.0
5.0
6.0
VGS(th) Gate threshold Voltage (V)
ID = 1.0A
ID = 1.0mA
ID = 250µA
IRFP4127PbF
7 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback March 09, 2015
Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
Fig 22a. Unclamped Inductive Test Circuit
R
G
I
AS
0.01
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
Fig 23a. Switching Time Test Circuit
Fig 24a. Gate Charge Test Circuit
tp
V
(BR)DSS
I
AS
Fig 22b. Unclamped Inductive Waveforms
Fig 23b. Switching Time Waveforms
Vds
Vgs
Id
Vgs(th)
Qgs1 Qgs2 Qgd Qgodr
Fig 24b. Gate Charge Waveform
IRFP4127PbF
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Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
TO-247AC Part Marking Information
TO-247AC package is not recommended for Surface Mount Application.
2x
c
"A"
"A"
E
E2/ 2
Q
E2
2X
L1
L
D
A
e
2x b2 3x b
LEAD TIP
SEE
VIEW "B"
b4
B
A
Ø .010 BA
A2
A1
Ø .010 BA
D1
S
E1
THERMAL PAD
-A-
Ø P
Ø .010 BA
VI EW: "B"
SECTION: C-C, D- D, E-E
(b, b2, b4)
(c)
BASE META
L
PLATI NG
VI EW: "A" - "A"
YEAR 1 = 2001
DATE CODE
PART NUMBER
INTERNATIONAL
LOGO
RECTIFIER
ASSEMBLY
56 57
IRFPE30
135H
LINE H
indicates "Lead-Free" WEEK 35
LOT CODE
IN THE ASSEMBLY LINE "H"
ASSEMBLED ON WW 35, 2001
Notes: This part marking information applies to devices produced after 02/26/2001
Note: "P" in assembly line position
EXAMPLE:
WITH ASSEMBLY
THIS IS AN IRFPE30
LOT CODE 5657
IRFP4127PbF
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Qualification Information†
Qualification Level
Industrial
(per JEDEC JESD47F) ††
Moisture Sensitivity Level TO-247AC N/A
RoHS Compliant Yes
† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/
†† Applicable version of JEDEC standard at the time of product release.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 101N Sepulveda., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
