HL6501MG Visible High Power Laser Diode ODE-208-515I (Z) Rev.9 Jan. 2003 Description The HL6501MG is a 0.65 m band AlGaInP laser diode (LD) with a multi-quantum well (MQW) structure. It is suitable as a light source for large capacity optical disc memories, such as DVD-R, and various other types of optical equipment. Hermetic sealing of the small package (5.6 mm) assures high reliability. Application * Optical disc memories * Optical equipment Features * High output power: 35 mW (CW) * Visible light output: p = 658 nm Typ * Small package: 5.6 mm * Low astigmatism: 6 m Typ (PO = 5 mW) * Single longitudinal mode Package Type * HL6501MG: MG Internal Circuit 1 3 PD LD 2 HL6501MG Absolute Maximum Ratings (TC = 25C) Item Symbol Rated Value Unit Optical output power PO 35 mW Pulse optical output power PO(pulse) 50 * mW LD reverse voltage VR(LD) 2 V PD reverse voltage VR(PD) 30 V Operating temperature Topr -10 to +60 C Storage temperature Tstg -40 to +85 C Note: Pulse condition : Pulse width = 100 ns , duty = 50% Optical and Electrical Characteristics (TC = 25C) Item Symbol Min Typ Max Unit Test Conditions Threshold current Ith 30 45 70 mA -- Operating voltage VOP 2.1 2.6 3.0 V PO = 30 mW Slope efficiency s 0.5 0.75 1.0 mW/mA 18 (mW) / (I(24mW) - I(6mW)) Beam divergence parallel to the junction // 7 8.5 10.5 deg. PO = 30 mW Beam divergence parpendicular to the junction 18 22 26 deg. PO = 30 mW Astigmatism AS -- 6 -- m PO = 5 mW, NA = 0.55 Lasing wavelength p 645 658 665 nm PO = 30 mW Monitor current IS 0.05 0.3 1.5 mA PO = 30 mW, VR(PD) = 5 V Rev.9, Jan. 2003, page 2 of 7 HL6501MG Typical Characteristic Curves TC = 25C 40 TC = 0C Monitor current, IS (mA) Optical output power, PO (mW) Optical Output Power vs. Forward Current 50 TC = 60C 30 20 10 0 40 0 80 120 160 Monitor Current vs. Optical Output Power 0.5 VR(PD) = 5 V TC = 25C 0.4 0.3 0.2 0.1 0 200 0 Threshold Current vs. Case Temperature 100 0 10 20 30 40 50 60 Case temperature, TC (C) 20 30 40 50 Slope Efficiency vs. Case Temperature 1.0 Slope efficiency, S (mW/mA) Threshold current, Ith (mA) 10 10 Optical output power, PO (mW) Foward current, IF (mA) 70 80 0.8 0.6 0.4 0.2 0 0 10 20 30 40 50 60 70 80 Case temperature, TC (C) Rev.9, Jan. 2003, page 3 of 7 HL6501MG Typical Characteristic Curves (cont) Lasing Wavelength vs. Case Temperature Monitor Current vs. Case Temperature 675 PO = 30 mW Lasing wavelength, p (nm) PO = 30 mW VR(PD) = 5 V 0.8 0.6 0.4 0.2 0 670 665 660 655 650 10 0 20 40 50 60 0 10 20 30 40 50 60 70 80 Case temperature, TC (C) Case temperature, TC (C) Lasing Spectrum Polarization Ratio vs. Optical Output Power 1200 TC = 25C NA = 0.55 1000 TC = 25C Relative intensity 30 PO = 30 mW Polarization ratio Monitor current, IS (mA) 1.0 PO = 20 mW PO = 10 mW 800 600 400 200 PO = 5 mW 0 650 655 Lasing wavelength, p (nm) Rev.9, Jan. 2003, page 4 of 7 660 0 10 20 30 40 Optical output power, PO (mW) 50 HL6501MG Typical Characteristic Curves (cont) Astigmatism vs. Optical Output Power Far Feild Pattern 10 1.0 TC = 25C NA = 0.55 0.8 Intensity Perpendicular 0.6 0.4 Parallel 0.2 0 -40 -30 -20 -10 0 Astigmatism, AS (m) PO = 30 mW TC = 25C 8 6 4 2 0 10 20 30 40 0 Angle, (deg.) 10 20 30 40 50 Optical output power, PO (mW) Electrostatic Destruction(MIL standard) Frequency Response 100 3dB/div P = 3 mW O LD Forward N = 5pcs Iop 10% judgment Gain (dB) Survival rate (%) 80 60 40 20 1M 10M 100M Frequency (Hz) 1G 3G 0 0 1 2 Applied voltage (kV) 3 Rev.9, Jan. 2003, page 5 of 7 HL6501MG Package Dimensions As of July, 2002 Unit: mm 0.4 +0.1 -0 5.6 +0 -0.025 1.0 0.1 (90) (0.4) 0.25 4.1 0.3 3.55 0.1 Glass 2.3 0.2 1.6 0.2 1.27 6.5 1.0 1.2 0.1 Emitting Point 3 - 0.45 0.1 1 1 2 3 3 2 2.0 0.2 OPJ Code JEDEC JEITA Mass (reference value) Rev.9, Jan. 2003, page 6 of 7 LD/MG -- -- 0.3 g HL6501MG Cautions 1. Opnext Japan,Inc.(OPJ) neither warrants nor grants licenses of any our rights or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. OPJ bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. OPJ makes every attempt to ensure that its products are of high quality and reliability. However, contact our sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by OPJ particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. OPJ bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so that the equipment incorporating OPJ product does not cause bodily injury, fire or other consequential damage due to operation of the OPJ product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from OPJ. 7. Contact our sales office for any questions regarding this document or OPJ products. 1. The laser light is harmful to human body especially to eye no matter what directly or indirectly. The laser beam shall be observed or adjusted through infrared camera or equivalent. 2. This product contains gallium arsenide (GaAs), which may seriously endanger your health even at very low doses. Please avoid treatment which may create GaAs powder or gas, such as disassembly or performing chemical experiments, when you handle the product. When disposing of the product, please follow the laws of your country and separate it from other waste such as industrial waste and household garbage. 3. Definition of items shown in this CAS is in accordance with that shown in Opto Device Databook issued by OPJ unless otherwise specified. Sales Offices Opto Device Business Unit Opnext Japan, Inc. 190 Kashiwagi, Komoro-shi, Nagano 384-8511, Japan Tel: (0267) 22-4111 For the detail of Opnext, Inc., see the following homepage: Japan (Japanese) Other area (English) http://japan.opnext.com/optodevice/ http://www.opnext.com/optodevice/ Copyright (c) Opnext Japan, Inc., 2003. All rights reserved. Printed in Japan. Colophon 0.0 Rev.9, Jan. 2003, page 7 of 7