SM5009 series
NIPPON PRECISION CIRCUITS—1
NIPPON PRECISION CIRCUITS INC.
Crystal Oscillator Module ICs
OVERVIEW
The SM5009 series are crystal oscillator module ICs, that incorporate circuits to limit oscillator-stage current,
controlling total current consumption. High-frequency capacitors are built-in, eliminating the need for external
components to make a stable fundamental-harmonic oscillator.
FEATURES
Capacitors C
G
, C
D
built-in
Standby function
6
µ
A typ (V
DD
=
5 V) low standby current
(SM5009AL
×
S)
Power-save pull-up resistor built-in
(SM5009AL
×
S)
Inverter amplifier feedback resistor built-in
16 mA (V
DD
=
4.5 V) drive capability
(SM5009AK
×
S, AL
×
S, AN
×
S, CN
×
S)
4 mA (V
DD
=
4.5 V) drive capability
(SM5009AH
×
S)
Output three-state function
2.25 to 5.5 V supply voltage (CF5009AL
×
)
2.7 to 5.5 V supply voltage
(SM5009AH
×
S, AL
×
S, AN
×
S, CN
×
S)
Oscillator frequency output (f
O
, f
O
/2, f
O
/4, f
O
/8,
f
O
/16, f
O
/32 determined by internal connection)
8-pin SOP (SM5009
×××
S)
Chip form (CF5009
×××
)
SERIES CONFIGURATION
Note: Recommended operating frequency is not the guaranteed value but is measured using NPC’s standard crystal.
ORDERING INFORMATION
Version
1, 2
1. Chip form devices have designation CF5009
×××
.
2. SM5009AH
×
S: V
DD
= 4.5 to 5.5V
SM5009AK
×
S: Ta = –20 to +85
°
C
Supply
voltag e
[V]
Output
frequency
3V operating 5V operating Built-in
capacitance Input
level
Output
duty
level
Standby
function
Output
load
(max)
[pF]
Recommended
operating
frequency
range
3
[MHz]
3. SM5009AH
×
S, AN
×
S , AL
×
S: Ta = –20 to +80
°
C
SM5009CN
×
S: Ta = –10 to +70
°
C
Output
load
(max)
[pF]
Recommended
operating
frequency
range
4
[MHz]
4. SM5009AN
×
S , AL
×
S: Ta = –20 to +80
°
C
C
G
[pF] C
D
[pF]
SM5009AH1S 2.7 to 5.5 f
O
15 16 15 30 6 10 TTL CMOS No
SM5009AH2S 2.7 to 5.5 f
O
/2 15 16 15 30 6 10 TTL CMOS No
SM5009AH3S 2.7 to 5.5 f
O
/4 15 16 15 30 6 10 TTL CMOS No
SM5009AH4S 2.7 to 5.5 f
O
/8 15 16 15 30 6 10 TTL CMOS No
SM5009AK1S 4.5 to 5.5 f
O
15 40 6 10 TTL TTL No
SM5009AK2S 4.5 to 5.5 f
O
/2 15 40 6 10 TTL TTL No
SM5009AN1S 2.7 to 5.5 f
O
30 40 50 40 6 10 TTL CMOS No
SM5009AN2S 2.7 to 5.5 f
O
/2 30 40 50 40 6 10 TTL CMOS No
SM5009AN3S 2.7 to 5.5 f
O
/4 30 40 50 40 6 10 TTL CMOS No
SM5009AN4S 2.7 to 5.5 f
O
/8 30 40 50 40 6 10 TTL CMOS No
SM5009AN5S 2.7 to 5.5 f
O
/16 30 40 50 40 6 10 TTL CMOS No
SM5009AN6S 2.7 to 5.5 f
O
/32 30 40 50 40 6 10 TTL CMOS No
SM5009CN1S 2.7 to 5.5 f
O
15 30 50 30 6 10 TTL CMOS No
SM5009CN2S 2.7 to 5.5 f
O
/2 15 30 50 30 6 10 TTL CMOS No
SM5009AL1S 2.7 to 5.5 f
O
30 40 50 40 6 10 CMOS CMOS Yes
SM5009AL2S 2.7 to 5.5 f
O
/2 30 40 50 40 6 10 CMOS CMOS Yes
SM5009AL3S 2.7 to 5.5 f
O
/4 30 40 50 40 6 10 CMOS CMOS Yes
SM5009AL4S 2.7 to 5.5 f
O
/8 30 40 50 40 6 10 CMOS CMOS Yes
SM5009AL5S 2.7 to 5.5 f
O
/16 30 40 50 40 6 10 CMOS CMOS Yes
SM5009AL6S 2.7 to 5.5 f
O
/32 30 40 50 40 6 10 CMOS CMOS Yes
Device Package
SM5009
×××
S 8-pin SOP
CF5009
×××
1 Chip form
SM5009 series
NIPPON PRECISION CIRCUITS—2
PACKAGE DIMENSIONS
(Unit:mm)
8-pin SOP
4.4 0.2
1.5 0.1
0.05 0.05
0.4 0.2
5.2 0.3
0.4 0.1
0.15 + 0.1
0.05
0 to 10
6.2 0.3
0.695typ
1.27
0.12 M
0.10
SM5009 series
NIPPON PRECISION CIRCUITS—3
PAD LAYOUT
(Unit:
µ
m)
PINOUT
(Top view)
PIN DESCRIPTION and PAD DIMENSIONS
BLOCK DIAGRAM
Chip size: 0.92
×
1.22 mm
Chip thickness: 300 ± 30 µm
Chip base: V
DD
level
Q
VDD
XT VSS
(0,0)
(920,1220)
X
Y
HA5009
INH XT
1
XT
VSS Q
VDD
4
2
3NC
NC
8
7
6
5
009
XT
INH
Number Name I/O Description Pad dimensions [µm]
XY
1INHIOutput state control input. High impedance when LOW . In the case of the
SM5009AL
×
S , the oscillator stops and Power-saving pull-up resistor built in. 195 212
2 XT I Amplifier input. Crystal oscillator connection pins.
Cr ystal oscillator connected between XT and XT 385 212
3XTO Amplifier output. 575 212
4 VSS Ground 766 212
5QO
Output. Output frequency (f
O
, f
O
/2, f
O
/4, f
O
/8, f
O
/16, f
O
/32) determined by
internal connection 765 1062
6 N C No connection
7 N C No connection
8 V D D Supply voltage 162 1062
XT
VSSVDD
Q
CGCD
Rf
XT
INH
1/2 1/21/2 1/2 1/2
SM5009 series
NIPPON PRECISION CIRCUITS—4
SPECIFICATIONS
Absolute Maximum Ratings
V
SS
= 0 V
Recommended Operating Conditions
V
SS
= 0 V
Parameter Symbol Condition Rating Unit
Supply voltage range V
DD
0.5 to 7.0 V
Input voltage range V
IN
0.5 to V
DD
+ 0.5 V
Output voltage range V
OUT
0.5 to V
DD
+ 0.5 V
Ope rating temperature range T
opr
40 to 85
°
C
Storage temperature range T
stg
Chip form
65 to 150
°
C
8-pin SOP
55 to 125
Output current I
OUT
25 mA
P ower dissipation P
D
8-pin SOP 500 mW
Parameter Symbol Series Condition Rating Unit
min typ max
Supply voltage V
DD
AH series f
30MHz 4.5 5.5 V
f
16MHz 2.7 3.3
AK series f
40MHz 4.5 5.5 V
AN series f
40MHz 2.7 5.5 V
CN series f
30MHz 2.7 5.5 V
AL series
Chip form
f
40MHz 2.7 5.5
V
f
30MHz 2.3 2.7
f
20MHz 2.25 2.75
8-pin SOP f
40MHz 2.7 5.5
f
14.4MHz 2.4 2.7
Input voltage V
IN
All serie s V
SS
–V
DD
V
Ope rating temperature T
OPR
AH series f
30MHz, 4.5V
V
DD
5.5V
40
+
85
°
C
f
16MHz, 2.7V
V
DD
3.6V
20
+
80
AK series f
30MHz
40
+
85
°
C
30MHz
<
f
40MHz
20
+
80
AN series
Chip form f
40MHz, 2.7V
V
DD
<
4.5V
20
+
80
°
C
f
40MHz, 4.5V
V
DD
5.5V
40
+
85
8-pin SOP
f
40MHz, 2.7V
V
DD
<
4.5V
20
+
80
f
40MHz, 4.5V
V
DD
5.5V
20
+
80
f
30MHz, 4.5V
V
DD
5.5V
40
+
85
CN series f
30MHz, 2.7V
V
DD
<
4.5V
10
+
70
°
C
f
30MHz, 4.5V
V
DD
5.5V
40
+
85
AL series
Chip form
f
40MHz, 2.7V
V
DD
5.5V
40
+
85
°
C
f
30MHz, 2.3V
V
DD
2.7V
20
+
80
f
20MHz, 2.25V
V
DD
2.75V
20
+
80
8-pin SOP
f
40MHz, 2.7V
V
DD
5.5V
20
+
80
f
30MHz, 2.7V
V
DD
5.5V
40
+
85
f
14.4MHz, 2.4V
V
DD
2.7V
20
+
80
SM5009 series
NIPPON PRECISION CIRCUITS—5
Electrical Characteristics
5009AH series
3 V operation: VDD = 2.7 to 3.3 V, VSS = 0 V, Ta = 20 to 80 °C unless otherwise noted.
5 V operation: VDD = 4.5 to 5.5 V, VSS = 0 V, Ta = 40 to 85 °C unless otherwise noted.
Parameter Symbol Condition Rating Unit
min typ max
HIGH-level output voltage V
OH
Q: Measurement cct 1, I
OH
= 2 mA 2.2 V
LO W-level output voltage V
OL
Q: Measurement cct 1, I
OL
= 2 mA 0.4 V
Output leakage current I
Z
Q: Measurement cct 2, INH = LOW, V
OH
= V
DD
––10
µA
Q: Measurement cct 2, INH = LOW, V
OL
= V
SS
––10
HIGH-level input voltage V
IH
INH 2.0 V
LOW-lev el input voltage V
IL
INH 0.3 V
Current consumption I
DD
INH = open, Measurement cct 3,
load cct 2, C
L
= 15 pF,
16 MHz crystal oscillator
SM5009AH1S
CF5009AH1 4.5 10
mA
SM5009AH2S
CF5009AH2 –37
SM5009AH3S
CF5009AH3
SM5009AH4S
CF5009AH4
1.5 3
INH pull-up resistance R
UP
Measurement cct 4, V
DD
= 3 V, INH = V
SS
40 200 k
Negative resistance
R
L
V
DD
= 3 V, Ta = 25
°
C , 16 M H z –450
Feedback resistance R
f
Measurement cct 5 0.4 1.1 M
Built-in capacitance C
G
Design value, determined by the inter nal wafer pattern 5.58 6 6.42 pF
C
D
9.3 10 10.7 pF
Parameter Symbol Condition Rating Unit
min typ max
HIGH-level output voltage V
OH
Q: Measurement cct 1, I
OH
= 4 mA 4.0 V
LO W-level output voltage V
OL
Q: Measurement cct 1, I
OL
= 4 mA 0.4 V
Output leakage current I
Z
Q: Measurement cct 2, INH = LOW, V
OH
= V
DD
––10
µA
Q: Measurement cct 2, INH = LOW, V
OL
= V
SS
––10
HIGH-level input voltage V
IH
INH 2.0 V
LOW-lev el input voltage V
IL
INH 0.8 V
Current consumption I
DD
INH = open, Measurement cct 3,
load cct 2, C
L
= 15 pF,
30 MHz crystal oscillator
SM5009AH1S
CF5009AH1 –920
mA
SM5009AH2S
CF5009AH2 –613
SM5009AH3S
CF5009AH3
SM5009AH4S
CF5009AH4
–49
INH pull-up resistance R
UP
Measurement cct 4, V
DD
= 5 V, INH = V
SS
40 200 k
Negative resistance
R
L
V
DD
= 5 V, Ta = 25
°
C , 30 M H z –340
Feedback resistance R
f
Measurement cct 5 0.4 1.1 M
Built-in capacitance C
G
Design value, determined by the inter nal wafer pattern 5.58 6 6.42 pF
C
D
9.3 10 10.7 pF
SM5009 series
NIPPON PRECISION CIRCUITS—6
5009AK series
VDD = 4.5 to 5.5 V, VSS = 0 V, Ta = 40 to 85 °C unless otherwise noted.
Parameter Symbol Condition Rating Unit
min typ max
HIGH-level output voltage V
OH
Q: Measurement cct 1, I
OH
= 16 mA 4.0 V
LO W-level output voltage V
OL
Q: Measurement cct 1, I
OL
= 16 mA 0.4 V
Output leakage current I
Z
Q: Measurement cct 2, INH = LOW, V
OH
= V
DD
––10
µA
Q: Measurement cct 2, INH = LOW, V
OL
= V
SS
––10
HIGH-level input voltage V
IH
INH 2.0 V
LOW-lev el input voltage V
IL
INH 0.8 V
Current consumption I
DD
INH = open, Measurement cct 3,
load cct 1, C
L
= 15 pF,
40 MHz crystal oscillator,
Ta = –20 to +80
°
C
SM5009AK1S 12 26
mA
CF5009AK1 12 26
SM5009AK2S 8 17
CF5009AK2 8 17
INH pull-up resistance R
UP
Measurement cct 4, V
DD
= 5 V, INH = V
SS
40 200 k
Negative resistance
R
L
V
DD
= 5 V, Ta = 25
°
C , 40 M H z –210
Feedback resistance R
f
Measurement cct 5 0.4 1.1 M
Built-in capacitance C
G
Design value, determined by the inter nal wafer pattern 5.58 6 6.42 pF
C
D
9.3 10 10.7 pF
SM5009 series
NIPPON PRECISION CIRCUITS—7
5009AL series
3 V operation: VDD = 2.7 to 3.3 V, VSS = 0 V, Ta = 40 to 85 °C unless otherwise noted.
Parameter Symbol Condition Rating Unit
min typ max
HIGH-level output voltage V
OH
Q: Measurement cct 1, I
OH
= 8 mA 2.2 V
LO W-level output voltage V
OL
Q: Measurement cct 1, I
OL
= 8 mA 0.4 V
Output leakage current I
Z
Q: Measurement cct 2, INH = LOW, V
OH
= V
DD
––10
µA
Q: Measurement cct 2, INH = LOW, V
OL
= V
SS
––10
HIGH-level input voltage V
IH
INH 0.7V
DD
––V
LOW-lev el input voltage V
IL
INH 0.3V
DD
V
Current consumption I
DD
INH = open, Measurement cct 3,
load cct 2, C
L
= 15 pF,
40 MHz crystal oscillator
CF5009AL1 8 17
mA
CF5009AL2 5 11
CF5009AL3 4 9
CF5009AL4 3 7
CF5009AL5 3 6
CF5009AL6 2 5
INH = open, Measurement cct 3,
load cct 2, C
L
= 15 pF,
40 MHz crystal oscillator,
Ta = –20 to +80
°
C
SM5009AL1S 8 17
SM5009AL2S 5 11
SM5009AL3S 4 9
SM5009AL4S 3 7
SM5009AL5S 3 6
SM5009AL6S 2 5
Standby current I
ST
INH = V
SS
, Measurement cct 3 2 5 µ A
INH pull-up resistance R
UP1
Measurement cct 4, V
DD
= 3 V, INH = V
SS
0.6 12 M
R
UP2
Measurement cct 4, V
DD
= 3 V, INH = 2.1V 40 200 k
Negative resistance
R
L
V
DD
= 3 V, Ta = 25
°
C , 40 M H z –200
Feedback resistance R
f
Measurement cct 5 0.4 1.1 M
Built-in capacitance C
G
Design value, determined by the inter nal wafer pattern 5.58 6 6.42 pF
C
D
9.3 10 10.7 pF
SM5009 series
NIPPON PRECISION CIRCUITS—8
5 V operation: VDD = 4.5 to 5.5 V, VSS = 0 V, Ta = 40 to 85 °C unless otherwise noted.
Parameter Symbol Condition Rating Unit
min typ max
HIGH-level output voltage V
OH
Q: Measurement cct 1, I
OH
= 16 mA 4.0 V
LO W-level output voltage V
OL
Q: Measurement cct 1, I
OL
= 16 mA 0.4 V
Output leakage current I
Z
Q: Measurement cct 2, INH = LOW, V
OH
= V
DD
––10
µA
Q: Measurement cct 2, INH = LOW, V
OL
= V
SS
––10
HIGH-level input voltage V
IH
INH 0.7V
DD
––V
LOW-lev el input voltage V
IL
INH 0.3V
DD
V
Current consumption I
DD
INH = open, Measurement cct 3,
load cct 2, C
L
= 15 pF,
40 MHz crystal oscillator
CF5009AL1 12 26
mA
CF5009AL2 8 17
CF5009AL3 6 13
CF5009AL4 5 11
CF5009AL5 5 10
CF5009AL6 4 9
INH = open, Measurement cct 3,
load cct 2, C
L
= 15 pF,
40 MHz crystal oscillator,
Ta = –20 to +80
°
C
SM5009AL1S 12 26
SM5009AL2S 8 17
SM5009AL3S 6 13
SM5009AL4S 5 11
SM5009AL5S 5 10
SM5009AL6S 4 9
Standby current I
ST
INH = V
SS
, Measurement cct 3 6 1 5 µ A
INH pull-up resistance R
UP1
Measurement cct 4, V
DD
= 5 V, INH = V
SS
0.3 6 M
R
UP2
Measurement cct 4, V
DD
= 5 V, INH = 3.5V 40 200 k
Negative resistance
R
L
V
DD
= 5 V, Ta = 25
°
C , 40 M H z –400
Feedback resistance R
f
Measurement cct 5 0.4 1.1 M
Built-in capacitance C
G
Design value, determined by the inter nal wafer pattern 5.58 6 6.42 pF
C
D
9.3 10 10.7 pF
SM5009 series
NIPPON PRECISION CIRCUITS—9
5009AN/CN series
3 V operation: VDD = 2.7 to 3.3 V, VSS = 0 V, Ta = 20 to 80 °C unless otherwise noted.
Parameter Symbol Condition Rating Unit
min typ max
HIGH-level output voltage V
OH
Q: Measurement cct 1, I
OH
= 8 mA
SM5009AN1S, CF5009AN1
SM5009AN2S, CF5009AN2 2.2
V
SM5009AN3S, CF5009AN3
SM5009AN4S, CF5009AN4
SM5009AN5S, CF5009AN5
SM5009AN6S, CF5009AN6
SM5009CN1S, CF5009CN1
SM5009CN2S, CF5009CN2
2.1
LO W-level output voltage V
OL
Q: Measurement cct 1, I
OL
= 8 mA 0.4 V
Output leakage current I
Z
Q: Measurement cct 2, INH = LOW, V
OH
= V
DD
––10
µA
Q: Measurement cct 2, INH = LOW, V
OL
= V
SS
––10
HIGH-level input voltage V
IH
INH 2.0 V
LOW-lev el input voltage V
IL
INH 0.3 V
Current consumption I
DD
INH = open, Measurement cct 3,
load cct 2, C
L
= 15 pF,
40 MHz crystal oscillator
SM5009AN1S, CF5009AN1 8 17
mA
SM5009AN2S, CF5009AN2 5 11
SM5009AN3S, CF5009AN3 4 9
SM5009AN4S, CF5009AN4 3 7
SM5009AN5S, CF5009AN5 3 6
SM5009AN6S, CF5009AN6 2 5
INH = open, Measurement cct 3,
load cct 2, C
L
= 15 pF,
30 MHz crystal oscillator,
Ta = –10 to +70
°
C
SM5009CN1S, CF5009CN1 7 15
SM5009CN2S, CF5009CN2 4 9
INH pull-up resistance R
UP
Measurement cct 4, V
DD
= 3 V, INH = V
SS
40 200 k
Negative resistance
R
L
V
DD
= 3 V, Ta = 25
°
C , 40 M H z –100
Feedback resistance R
f
Measurement cct 5 0.4 1.1 M
Built-in capacitance C
G
Design value, determined by the inter nal wafer pattern 5.58 6 6.42 pF
C
D
9.3 10 10.7 pF
SM5009 series
NIPPON PRECISION CIRCUITS—10
5 V operation: V
DD
= 4.5 to 5.5 V, V
SS
= 0 V, Ta =
40 to 85
°
C unless otherwise noted.
Parameter Symbol Condition Rating Unit
min typ max
HIGH-level output voltage V
OH
Q: Measurement cct 1, I
OH
= 16 mA
SM5009AN1S, CF5009AN1
SM5009AN2S, CF5009AN2 4.0
V
SM5009AN3S, CF5009AN3
SM5009AN4S, CF5009AN4
SM5009AN5S, CF5009AN5
SM5009AN6S, CF5009AN6
SM5009CN1S, CF5009CN1
SM5009CN2S, CF5009CN2
3.9
LO W-level output voltage V
OL
Q: Measurement cct 1, I
OL
= 16 mA 0.4 V
Output leakage current I
Z
Q: Measurement cct 2, INH = LOW, V
OH
= V
DD
––10
µA
Q: Measurement cct 2, INH = LOW, V
OL
= V
SS
––10
HIGH-level input voltage V
IH
INH 2.0 V
LOW-lev el input voltage V
IL
INH 0.8 V
Current consumption I
DD
INH = open, Measurement cct 3,
load cct 2, C
L
= 15 pF,
40 MHz crystal oscillator
CF5009AN1 12 26
mA
CF5009AN2 8 17
CF5009AN3 6 13
CF5009AN4 5 11
CF5009AN5 5 10
CF5009AN6 4 9
INH = open, Measurement cct 3,
load cct 2, C
L
= 15 pF,
40 MHz crystal oscillator,
Ta = –20 to +80
°
C
SM5009AN1S 12 26
SM5009AN2S 8 17
SM5009AN3S 6 13
SM5009AN4S 5 11
SM5009AN5S 5 10
SM5009AN6S 4 9
INH = open, Measurement cct 3,
load cct 2, C
L
= 15 pF,
30 MHz crystal oscillator
SM5009CN1S, CF5009CN1 10 22
SM5009CN2S, CF5009CN2 7 15
INH pull-up resistance R
UP
Measurement cct 4, V
DD
= 5 V, INH = V
SS
40 200 k
Negative resistance
R
L
V
DD
= 5 V, Ta = 25
°
C , 40 M H z –210
Feedback resistance R
f
Measurement cct 5 0.4 1.1 M
Built-in capacitance C
G
Design value, determined by the inter nal wafer pattern 5.58 6 6.42 pF
C
D
9.3 10 10.7 pF
SM5009 series
NIPPON PRECISION CIRCUITS—11
Switching Characteristics
5009AH series
3 V operation: VDD = 2.7 to 3.3 V, VSS = 0 V, Ta = 20 to 80 °C unless otherwise noted.
5 V operation: VDD = 4.5 to 5.5 V, VSS = 0 V, Ta = 40 to 85 °C unless otherwise noted.
5009AK series
VDD = 4.5 to 5.5 V, VSS = 0 V, Ta = 40 to 85 °C unless otherwise noted.
Parameter Symbol Condition Rating Unit
min typ max
Output rise time t
r1
Measurement cct 3, load cct 2, 0.1V
DD
to 0.9V
DD
, C
L
= 15 pF 6 18 ns
Output fall time t
f1
Measurement cct 3, load cct 2, 0.9V
DD
to 0.1V
DD
, C
L
= 15 pF 6 18 ns
Output duty cycle
1
1. Determined by the lot monitor.
Du ty Measurement cct 3, load cct 2, Ta = 25
°
C, V
DD
= 3 V, C
L
= 15 pF 45 55 %
Output disable delay time t
PLZ
Measurement cct 6, load cct 2, Ta = 25
°
C, V
DD
= 3 V, C
L
15 pF 100 ns
Output enable delay time t
PZL
100 ns
Maximum operating
frequency f
max
Measurement cct 3 16 M H z
Parameter Symbol Condition Rating Unit
min typ max
Output rise time t
r1
Measurement cct 3, load cct 2, 0.1V
DD
to 0.9V
DD
, C
L
= 15 pF 4 12 ns
Output fall time t
f1
Measurement cct 3, load cct 2, 0.9V
DD
to 0.1V
DD
, C
L
= 15 pF 4 12 ns
Output duty cycle
1
1. Determined by the lot monitor.
Du ty Measurement cct 3, load cct 2, Ta = 25
°
C, V
DD
= 5 V, C
L
= 15 pF 45 55 %
Output disable delay time t
PLZ
Measurement cct 6, load cct 2, Ta = 25
°
C, V
DD
= 5 V, C
L
15 pF 100 ns
Output enable delay time t
PZL
100 ns
Maximum operating
frequency f
max
Measurement cct 3 30 M H z
Parameter Symbol Condition Rating Unit
min typ max
Output rise time t
r
Measurement cct 3, load cct 1, 0.4V to 2.4V, C
L
= 15 pF 2 6 ns
Output fall time t
f
Measurement cct 3, load cct 1, 2.4V to 0.4V, C
L
= 15 pF 2 6 ns
Output duty cycle
1
1. Determined by the lot monitor.
Du ty Measurement cct 3, load cct 1, Ta = 25
°
C, V
DD
= 5 V, C
L
= 15 pF 4 5 55 %
Output disable delay time t
PLZ
Measurement cct 6, load cct 1, Ta = 25
°
C, V
DD
= 5 V, C
L
15 pF 100 ns
Output enable delay time t
PZL
100 ns
Maximum operating
frequency f
max
Measurement cct 3 Ta = –20 to +80
°
C40
MHz
Ta = –40 to +85
°
C30
SM5009 series
NIPPON PRECISION CIRCUITS—12
5009AL series
3 V operation: VDD = 2.7 to 3.3 V, VSS = 0 V, Ta = 40 to 85 °C unless otherwise noted.
Parameter Symbol Condition Rating Unit
min typ max
Output rise time
t
r1
Measurement cct 3, load cct 2, 0.1V
DD
to 0.9V
DD
, C
L
= 15 pF 3.5 9
ns
Measurement cct 3, load cct 2, 0.1V
DD
to 0.9V
DD
,
V
DD
= 2.3 to 2.7 V, Ta = –20 to +80
°
C, C
L
= 15 pF –413
t
r2
Measurement cct 3, load cct 2, 0.1V
DD
to 0.9V
DD
, C
L
= 30 pF 5 12
Measurement cct 3, load cct 2, 0.1V
DD
to 0.9V
DD
,
V
DD
= 2.3 to 2.7 V, Ta = –20 to +80
°
C, C
L
= 30 pF 5.5 16
Output fall time
t
f1
Measurement cct 3, load cct 2, 0.9V
DD
to 0.1V
DD
, C
L
= 15 pF 3.5 9
ns
Measurement cct 3, load cct 2, 0.9V
DD
to 0.1V
DD
,
V
DD
= 2.3 to 2.7 V, Ta = –20 to +80
°
C, C
L
= 15 pF –413
t
f2
Measurement cct 3, load cct 2, 0.9V
DD
to 0.1V
DD
, C
L
= 30 pF 5 12
Measurement cct 3, load cct 2, 0.9V
DD
to 0.1V
DD
,
V
DD
= 2.3 to 2.7 V, Ta = –20 to +80
°
C, C
L
= 30 pF 5.5 16
Output duty cycle
1
1. Determined by the lot monitor.
Duty
Measurement cct 3, load cct 2, Ta = 25
°
C, V
DD
= 3 V,
f
40 MHz, C
L
= 30 pF 45–55
%
Measurement cct 3, load cct 2, Ta = 25
°
C, V
DD
= 2.4 V,
f
14.4 MHz, C
L
= 30 pF 40–60
CF5009AL
×
only, Measurement cct 3, load cct 2, Ta = 25
°
C,
V
DD
= 2.5 V, f
30 MHz, C
L
= 15 pF 40–60
Output disable delay time
2
2. Oscillator stop function is built-in. When INH goes LOW, normal output stops. When INH goes HIGH, normal output is not resumed until after the
oscillator star t-up time has elapsed.
t
PLZ
Measurement cct 6, load cct 2, Ta = 25
°
C, V
DD
= 3 V, C
L
15 pF 100 ns
Output enable delay time
2
t
PZL
100 ns
Maximum operating
frequency f
max
Measurement cct 3 CF5009AL
×
40
MHz
SM5009AL
×
S30
Measurement cct 3, Ta = –20 to +80
°
C SM5009AL
×
S40
Measurement cct 3, Ta = –20 to +80
°
C
V
DD
= 2.4 to 2.7 V,
SM5009AL
×
S14.4
V
DD
= 2.3 to 2.7 V,
CF5009AL
×
30
V
DD
= 2.25 to 2.75 V,
CF5009AL
×
20
SM5009 series
NIPPON PRECISION CIRCUITS—13
5 V operation: VDD = 4.5 to 5.5 V, VSS = 0 V, Ta = 40 to 85 °C unless otherwise noted.
Parameter Symbol Condition Rating Unit
min typ max
Output rise time
t
r1
Measurement cct 3, load cct 2,
0.1V
DD
to 0.9V
DD
C
L
= 15 pF 2 4
nst
r2
C
L
= 30 pF 3.5 7
t
r3
C
L
= 50 pF 4 8
Output fall time
t
f1
Measurement cct 3, load cct 2,
0.9V
DD
to 0.1V
DD
C
L
= 15 pF 2 4
nst
f2
C
L
= 30 pF 3.5 7
t
f3
C
L
= 50 pF 4 8
Output duty cycle
1
1. Determined by the lot monitor.
Du ty Measurement cct 3, load cct 2, Ta = 25
°
C, V
DD
= 5 V, C
L
= 50 pF 45 55 %
Output disable delay time
2
2. Oscillator stop function is built-in. When INH goes LOW, normal output stops. When INH goes HIGH, normal output is not resumed until after the
oscillator star t-up time has elapsed.
t
PLZ
Measurement cct 6, load cct 2, Ta = 25
°
C, V
DD
= 5 V, C
L
15 pF 100 ns
Output enable delay time
2
t
PZL
100 ns
Maximum operating
frequency f
max
Measurement cct 3 CF5009AL
×
40
MHzSM5009AL
×
S30
Measurement cct 3, Ta = –20 to +80
°
C SM5009AL
×
S40
SM5009 series
NIPPON PRECISION CIRCUITS—14
5009AN/CN series
3 V operation: VDD = 2.7 to 3.3 V, VSS = 0 V, Ta = 20 to 80 °C unless otherwise noted.
Parameter Symbol Condition Rating Unit
min typ max
Output rise time
t
r1
Measurement cct 3, load cct 2,
0.1V
DD
to 0.9V
DD
,C
L
= 15 pF
SM5009AN1S, CF5009AN1
SM5009AN2S, CF5009AN2 3.5 9
ns
SM5009AN3S, CF5009AN3
SM5009AN4S, CF5009AN4
SM5009AN5S, CF5009AN5
SM5009AN6S, CF5009AN6
SM5009CN1S, CF5009CN1
SM5009CN2S, CF5009CN2
–513
t
r2
Measurement cct 3, load cct 2,
0.1V
DD
to 0.9V
DD
,C
L
= 30 pF
SM5009AN1S, CF5009AN1
SM5009AN2S, CF5009AN2 –512
SM5009AN3S, CF5009AN3
SM5009AN4S, CF5009AN4
SM5009AN5S, CF5009AN5
SM5009AN6S, CF5009AN6
SM5009CN1S, CF5009CN1
SM5009CN2S, CF5009CN2
–716
Output fall time
t
f1
Measurement cct 3, load cct 2,
0.9V
DD
to 0.1V
DD
,C
L
= 15 pF
SM5009AN1S, CF5009AN1
SM5009AN2S, CF5009AN2 3.5 9
ns
SM5009AN3S, CF5009AN3
SM5009AN4S, CF5009AN4
SM5009AN5S, CF5009AN5
SM5009AN6S, CF5009AN6
SM5009CN1S, CF5009CN1
SM5009CN2S, CF5009CN2
–513
t
f2
Measurement cct 3, load cct 2,
0.9V
DD
to 0.1V
DD
,C
L
= 30 pF
SM5009AN1S, CF5009AN1
SM5009AN2S, CF5009AN2 –512
SM5009AN3S, CF5009AN3
SM5009AN4S, CF5009AN4
SM5009AN5S, CF5009AN5
SM5009AN6S, CF5009AN6
SM5009CN1S, CF5009CN1
SM5009CN2S, CF5009CN2
–716
Output duty cycle
1
1. Determined by the lot monitor.
Duty Measurement cct 3, load cct 2,
Ta = 25
°
C, V
DD
= 3 V
C
L
= 30 pF,
SM5009AN
×
S, CF5009AN
×
45–55
%
C
L
= 15 pF,
SM5009CN
×
S, CF5009CN
×
40–60
Output disable delay time t
PLZ
Measurement cct 6, load cct 2, Ta = 25
°
C, V
DD
= 3 V, C
L
15 pF 100 ns
Output enable delay time t
PZL
100 ns
Maximum operating
frequency f
max
Measurement cct 3 SM5009AN
×
S, CF5009AN
×
40 MHz
Ta = –10 to +70
°
C,
SM5009CN
×
S, CF5009CN
×
30
SM5009 series
NIPPON PRECISION CIRCUITS—15
5 V operation: VDD = 4.5 to 5.5 V, VSS = 0 V, Ta = 40 to 85 °C unless otherwise noted.
Current consumption and Output waveform with NPC’s standard crystal
FUNCTIONAL DESCRIPTION
Standby Function
AH, AK, AN, CN series
When INH goes LOW, the output on Q becomes high impedance, but internally the oscillator does not stop.
AL series
When INH goes LOW, the oscillator stops and the oscillator output on Q becomes high impedance.
Power-save Pull-up Resistance (AL series only)
The INH pull-up resistance changes in response to the input level (HIGH or LOW). When INH goes LOW
(standby state), the pull-up resistance becomes large to reduce the current consumption during standby.
Parameter Symbol Condition Rating Unit
min typ max
Output rise time
t
r1
Measurement cct 3, load cct 2,
0.1V
DD
to 0.9V
DD
C
L
= 15 pF 2 4
nst
r2
C
L
= 30 pF 3.5 7
t
r3
C
L
= 50 pF 4 8
Output fall time
t
f1
Measurement cct 3, load cct 2,
0.9V
DD
to 0.1V
DD
C
L
= 15 pF 2 4
nst
f2
C
L
= 30 pF 3.5 7
t
f3
C
L
= 50 pF 4 8
Output duty cycle
1
1. Determined by the lot monitor.
Du ty Measurement cct 3, load cct 2, Ta = 25
°
C, V
DD
= 5 V, C
L
= 50 pF 45 55 %
Output disable delay time t
PLZ
Measurement cct 6, load cct 2, Ta = 25
°
C, V
DD
= 5 V, C
L
15 pF 100 ns
Output enable delay time t
PZL
100 ns
Maximum operating
frequency f
max
Measurement cct 3 CF5009AN
×
, SM5009AN
×
S40 MHz
SM5009CN
×
S, CF5009CN
×
30
Version INH Q Oscillator
AH, AK, AN, CN series HIGH (or open) A ny f
O
, f
O
/2, f
O
/4, f
O
/8, f
O
/16 or f
O
/32 output frequency Nor mal operation
LOW High impedance Normal operation
AL series HIGH (or open) Any f
O
, f
O
/2, f
O
/4, f
O
/8, f
O
/16 or f
O
/32 output frequency Nor mal operation
LOW High impedance Stopped
f (MHz) R () L (mH) Ca (fF) Cb (pF)
30 17.2 4.36 6.46 2.26
40 16.8 2.90 5.47 2.08
LCa R
Cb
SM5009 series
NIPPON PRECISION CIRCUITS—16
MEASUREMENT CIRCUITS
Measurement cct 1
5009AK
×
, AL
×
, AN1, AN2
R1 : 50
R2 : 250
(V
DD
=
4.5V), 275
(V
DD
=
2.7V)
R3 : 256
(V
DD
=
4.5V), 288
(V
DD
=
2.7V)
5009AN3 to AN6, CN
×
R1 : 50
R2 : 245
(V
DD
=
4.5V), 262
(V
DD
=
2.7V)
R3 : 256
(V
DD
=
4.5V), 288
(V
DD
=
2.7V)
5009AH
×
R1 : 50
R2 : 1000
(V
DD
=
4.5V), 1100
(V
DD
=
2.7V)
R3 : 1025
(V
DD
=
4.5V), 1150
(V
DD
=
2.7V)
Measurement cct 2
Measurement cct 3
Signal
Generator
VDD
VSS
XT Q
R1
R2
R3
V
DD
0V
XT input waveform
(10MHz)
V
OH
0V
Q output
V
DD
V
DD
V
OL
Q output
0V
When
measuring V
OL
When
measuring V
OH
VDD
VSS
Q
I
Z
V
OH
V
OL
V
A
I
Z
VDD
VSS
XT
QX'tal
XT
INH
IDD
IST
A
Measurement cct 4
Measurement cct 5
Measurement cct 6
R1 : 50
VDD
VSS
IPR
A
3.0V or 5.0V
INH
V
VIH
VIL
VDD
IPR (VIL = 0V)
RUP2 =IPR
VIH : 2.1V(V DD = 3.0V)
VIH : 3.5V(V DD = 5.0V)
VDD VIH
RUP
RUP1
=
VDD
VSS
I
Rf
R
f
=
XT V
DD
I
Rf
XT
A
Signal
Generator
VSS
XT Q
R1
VDD
INH
SM5009 series
NIPPON PRECISION CIRCUITS—17
Load cct 1 Load cct 2
Switching Time Measurement Waveform
Output duty level (CMOS)
Output duty level (TTL)
Output duty cycle (CMOS)
Output duty cycle (TTL)
C
L
= 15pF : DUTY , I
DD
, t
r
, t
f
R = 400
Q output
(Including proove
capacitance)
R
C
L
C
L
= 15pF : DUTY , I
DD
, t
r1
, t
f1
C
L
= 30pF : t
r2
, t
f2
C
L
= 50pF : t
r3
, t
f3
Q output
(Including probe
capacitance)
C
L
0.9VDD
0.1VDD
0.9VDD
0.1VDD
trtf
Q output DUTY measurement
voltage (0.5VDD )
TW
2.4V
0.4V
2.4V
0.4V
trtf
Q output DUTY measurement
voltage (1.4V)
TW
DUTY measurement
voltage (0.5V DD)
Q output
TW
T DUTY= TW/ T 100 (%)
DUTY measurement
voltage (1.4V )
Q output
TW
T DUTY= TW/ T 100 (%)
NIPPON PRECISION CIRCUITS INC. reserves the right to make changes to the products described in this data sheet in order to
improve the design or performance and to supply the best possible products. Nippon Precision Circuits Inc. assumes no responsibility for
the use of any circuits shown in this data sheet, conveys no license under any patent or other rights, and makes no claim that the circuits
are free from patent infringement. Applications for any devices shown in this data sheet are for illustration only and Nippon Precision
Circuits Inc. m akes no claim or warranty that such applications will be suitable for the use specified without fur ther testing or modification.
The products described in this data sheet are not intended to use for the apparatus which influence human lives due to the failure or
malfunction of the products. Customers are requested to comply with applicable laws and regulations in effect now and hereinafter,
including compliance with export controls on the distribution or dissemination of the products. Customers shall not export, directly or
indirectly, any products without first obtaining required licenses and approvals from appropriate government agencies.
NIPPON PRECISION CIRCUITS INC.
4-3, Fukuzumi 2-chome
Koto-ku, Tokyo 135-8430, Japan
Telephone: 03-3642-6661
Facsimile: 03-3642-6698
SM5009 series
NIPPON PRECISION CIRCUITS—18
NC9801FE 2000.09
NIPPON PRECISION CIRCUITS INC.
Output Enable/Disable Delay
Note (AL series only) : when the device is in standby, the oscillator stops. When standby is released, the oscil-
lator starts and stable oscillator output occurs after a short delay.
Q output
INH VIH
VIL
tPLZ tPZL
INH input waveform tr = tf 10ns