25
VTB Proc ess Photodiodes VTB1012B, 1013B
PRODUCT DESCRIPTION
Small area planar silicon photodiode in a “flat”
window, dual lead TO-46 package. The pac kage
incorporates an infrared rejection filter. Cathode
is common to the case. These diodes have ver y
high shunt resistance and have good blue
response.
PACKAGE DIMENSIONS inch (mm)
CASE 17 TO-46 HERMETIC
CHIP A CTIVE AREA : .0025 in
2
(1.60 mm
2
)
ABSOLUTE MAXIMUM RATINGS
St or ag e Tem per at u r e : -4 0°C t o 11 0°C
Oper ati ng Temp er a t ur e: -4 0°C t o 11 0°C
ELECTRO-OP T ICA L CHA RACTERI STICS @ 25°C (See also VTB curves, pages 21-22)
SYMBOL CHARACTERISTIC TEST CONDITIONS VTB1012B VTB1013B UNITS
Min. Typ. Max. Min. Typ. Max.
ISC Short Circuit Current H = 100 fc, 2850 K 0.8 1.3 0.8 1.3 µA
TC ISC ISC Tem perature Coefficient 2850 K .02 .08 .02 .08 %/°C
VOC Open Circuit Voltage H = 100 fc, 2850 K 420 420 mV
TC VOC VOC Temperatur e Coefficient 2850 K -2.0 -2.0 mV/°C
IDDark Current H = 0, VR = 2.0 V 100 20 pA
RSH Shunt Resistance H = 0, V = 10 mV .25 7.0 GΩ
TC RSH RSH Temperature Coefficient H = 0, V = 10 mV -8.0 -8.0 %/°C
CJJunction Capacitance H = 0, V = 0 .31 .31 nF
λrange Spectral Application Range 330 720 330 720 nm
λpSpectral Respo nse - Peak 580 580 nm
VBR Breakdown Voltage 2 40 2 40 V
θ1/2 Angular Resp. - 50% Resp. Pt. ±35 ±35 Degrees
NEP Noise Equiv alent Power 5.3 x 10-14 (Typ.) 1.1 x 10-14 (Typ.)
D* S pecific Detectivity 2.4 x 10 12 (Typ . ) 1.2 x 10 13 (Typ.)
/ W
WHz⁄
cm Hz
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
