SSM3J46CTB TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS VI) SSM3J46CTB Power Management Switch Applications Unit: mm * * 1.5 V drive Low ON-resistance: RDS(ON) = 250 m (max) (@VGS = -1.5 V) RDS(ON) = 178 m (max) (@VGS = -1.8 V) RDS(ON) = 133 m (max) (@VGS = -2.5 V) RDS(ON) = 103 m (max) (@VGS = -4.5 V) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Drain-Source voltage VDSS -20 V Gate-Source voltage VGSS 8 V DC ID -2.0 Pulse IDP -4.0 Drain current Power dissipation PD (Note 1) Unit A 1000 mW Channel temperature Tch 150 C Storage temperature range Tstg -55 to 150 C 1. Gate 2. Source 3. Drain CST3B Note: Using continuously under heavy loads (e.g. the application of high JEDEC temperature/current/voltage and the significant change in JEITA temperature, etc.) may cause this product to decrease in the TOSHIBA 2-1T1A reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the Weight: 1.5 mg (typ.) absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on a FR4 board. (25.4 mm x 25.4 mm x 1.6 mm, Cu Pad: 645 mm2) Marking (top view) Pin Condition (top view) Equivalent Circuit 3 1 SV Polarity mark 3 2 Polarity mark 1. Gate (on the top) 2. Source 3. Drain *Electrodes: on the bottom 1 2 Start of commercial production 2010-02 1 2015-11-26 SSM3J46CTB Electrical Characteristics (Ta = 25C) Characteristic Drain-Source breakdown voltage Symbol Test Conditions V (BR) DSS ID = -1 mA, VGS = 0 V V (BR) DSX ID = -1 mA, VGS = 5 V Drain cut-off current IDSS Gate leakage current (Note 3) VDS = -20 V, VGS = 0 V Min Typ. Max Unit -20 V -15 V -1 A IGSS VGS = 8 V, VDS = 0 V 1 A Gate threshold voltage Vth VDS = -3 V, ID = -1 mA -0.3 -1.0 V Forward transfer admittance |Yfs| S Drain-source ON-resistance RDS (ON) Input capacitance Ciss Output capacitance Coss (Note 2) 5.2 (Note 2) 88.5 103 ID = -1.0 A, VGS = -2.5 V (Note 2) 107.5 133 ID = -0.5 A, VGS = -1.8 V (Note 2) 130 178 ID = -0.25 A, VGS = -1.5 V (Note 2) 151 250 290 44 VDS = -10 V, VGS = 0 V f = 1 MHz 32 Turn-on time ton VDD = -10 V, ID = -0.5 A 13.4 Turn-off time toff VGS = 0 to -2.5 V, RG = 4.7 46.2 4.7 Reverse transfer capacitance Switching time VDS = -3 V, ID = -1.0 A ID = -1.5 A, VGS = -4.5 V Crss Total Gate Charge Qg Gate-Source Charge Qgs1 Gate-Drain Charge Qgd Drain-Source forward voltage VDSF VDD = -10 V, ID = -2.0 A, VGS = - 4.5 V ID = 2.0 A, VGS = 0 V (Note 2) m pF ns 0.4 1.0 0.9 1.2 nC V Note2: Pulse test Note3: If a forward bias is applied between gate and source, this device enters V(BR)DSX mode. Note that the drain-source breakdown voltage is lowered in this mode. Switching Time Test Circuit (a) Test Circuit (b) VIN 0V 90% OUT 0 IN 10% -2.5 V RG -2.5V 10 s RL (c) VOUT VDS (ON) 90% VDD VDD = -10 V RG = 4.7 Duty 1% VIN: tr, tf < 5 ns Common Source Ta = 25C 10% VDD tr ton tf toff Notice on Usage Vth can be expressed as the voltage between gate and source when the low operating current value is ID = -1 mA for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on).) Take this into consideration when using the device. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. 2 2015-11-26 SSM3J46CTB ID - VGS ID - VDS -5 -10 -2.5 V Common Source VDS = -3 V Pulse test -1.8 V Drain current ID Drain current ID -4.5 V -3 -2 -1 0 -0.4 -0.2 -0.6 -0.8 Drain-source voltage VDS 25 C -0.1 -0.01 Ta = 100 C -25 C -0.001 Common Source Ta = 25 C Pulse test 0 -1 (A) (A) VGS = -1.5 V -4 -0.0001 0 -1 -0.5 (V) Gate-source voltage VGS RDS (ON) - VGS Drain-source ON-resistance RDS (ON) (m) Drain-source ON-resistance RDS (ON) (m) 300 ID = -1.5 A Common Source Pulse test 200 25 C Ta = 100 C 100 -25 C 0 -2 -6 -4 Gate-source voltage VGS Common Source Ta = 25C Pulse test 200 -2.5 V -1.8 V -1.5 V 100 VGS = -4.5 V 0 -8 0 (V) -1.0 -2.0 Drain current ID RDS (ON) - Ta -3.0 -4.0 (A) Vth - Ta 300 -1.0 Gate threshold voltage Vth (V) Common Source Pulse test Drain-source ON-resistance RDS (ON) (m) (V) RDS (ON) - ID 300 0 -1.5 -1.0 -1.0 A / -2.5 V 200 -0.5 A / -1.8 V -0.25 A / -1.5 V 100 ID = -1.5 A / VGS = -4.5 V 0 -50 0 50 100 Common Source VDS = -3 V ID = -1 mA -0.5 0 -50 150 Ambient temperature Ta (C) 0 50 100 150 Ambient temperature Ta (C) 3 2015-11-26 SSM3J46CTB IDR - VDS |Yfs| - ID 10 (A) Drain reverse current IDR (S) Forward transfer admittance |Yfs| 10 Common Source VDS = -3 V Ta = 25C Pulse test 3 1 0.3 1 Common Source VGS = 0 V Pulse test D IDR G S 0.1 Ta =100 C 25 C 0.01 -25 C 0.1 -0.01 -1 -0.1 Drain current ID 0.001 0 -10 0.2 (A) 0.4 0.6 0.8 Drain-source voltage VDS C - VDS 10000 1000 (ns) Ciss Switching time t Capacitance C (pF) (V) Common Source VDD = -10 V VGS = 0 to -2.5 V Ta = 25 C RG = 4.7 toff 300 100 Coss 10 -0.1 1.2 t - ID 1000 30 1.0 Common Source Ta = 25 C f = 1 MHz VGS = 0 V Crss tf 100 10 ton tr -1 -10 Drain-source voltage VDS 1 -0.001 -100 (V) -0.01 -0.1 Drain current ID -1 -10 (A) Dynamic Input Characteristic -8 Gate-source voltage VGS (V) Common Source ID = -2.0 A Ta = 25C -6 VDD = -10 V -4 VDD = -16 V -2 0 0 2 4 Total Gate Charge 6 8 10 Qg (nC) 4 2015-11-26 SSM3J46CTB P D - Ta 1200 a: Mounted on FR4 board (25.4 mm x 25.4 mm x 1.6 mm , Cu Pad : 645 mm2) b: Mounted on FR4 board (25.4 mm x 25.4 mm x 1.6 mm , Cu Pad : 0.58 mm2) Power dissipation PD (mW) Transient thermal impedance Rth (C/W ) Rth - tw 1000 b 100 a 10 Single pulse a. Mounted on FR4 board (25.4 mm x 25.4 mm x 1.6 mm, Cu Pad: 645 mm2) b. Mounted on FR4 board (25.4 mm x 25.4 mm x 1.6 mm, Cu Pad: 0.58 mm2) 1 0.001 0.01 0.1 1 Pulse width tw 10 100 1000 800 600 400 200 0 -40 1000 a b -20 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (C) (s) 5 2015-11-26 SSM3J46CTB RESTRICTIONS ON PRODUCT USE * Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. * This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission. * Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. 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